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公开(公告)号：JPH087748A
公开(公告)日：1996-01-12
申请号：JP13525694
申请日：1994-06-17
Applicant: TOSHIBA CORP
Inventor： TANAMOTO TETSUSHI , SAKAI TADASHI , NAKAMURA HIROYUKI , NAKAMOTO MASAYUKI
IPC: H01J9/02
Abstract: PURPOSE:To establish a manufacturing method for electron emitting element, which can make electric field emission of good uniformity within a plane. CONSTITUTION:A trench-shaped recess 13 is provided in an Si base board 11, whose surface on the recess side is covered with a resist layer 14, and a Mo layer 15 of gate electrode is formed in the recess 13 followed by filling with an SiO2 layer 16. The Si board 11 is subjected to an anisotropic etching so that an inverted pyramidal recess 18 is formed, and a Mo layer 201 is formed in this recess 18. A glass board 22 is adhered to the Mo layer 20, and the Si board 11 is subjected to etching for removal.
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公开(公告)号：JPH0749310A
公开(公告)日：1995-02-21
申请号：JP19575393
申请日：1993-08-06
Applicant: TOSHIBA CORP
Inventor： SUZUKI KENSOU , SAKAI TADASHI
IPC: G01N21/76
Abstract: PURPOSE:To provide a gas detector with even higher sensitivity and selectivity of a detection gas. CONSTITUTION:This element includes a semiconductor substrate 1 with one main surface thereof made porous 1a finely, a light emitting element 5 comprising an electrode 2 arranged in a mesh or in a lattice on the surface made porous 1a and an opposed electrode layer 3 arranged on the rear of the substrate 1 and a detector 6 to detect the intensity of light emitted from the light emitting element 5 varying with a gas contacting the surface made porous 1a or a variation of the wavelength of the light.
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公开(公告)号：JPH0722647A
公开(公告)日：1995-01-24
申请号：JP18918093
申请日：1993-06-30
Applicant: TOSHIBA CORP
Inventor： SUZUKI TAKEAKI , SAKAI TADASHI
Abstract: PURPOSE:To improve light emitting characteristics by setting the unevenness difference of the surface of a first semiconductor layer or the resistivity and the thickness of the bonding layer, in specified range. CONSTITUTION:A porous silicon layer 3 (a first semiconductor layer) wherein the unevenness difference of the surface is smaller than or equal to one-half of the film thickness is formed on the surface of a P-type silicon substrate 4. An SnO2 film 2 (bonding layer) is formed on the porous silicon layer 3 and a hetero junction is formed by using the SnO2 film 2 and the porous silicon layer 3. The resistivity of the SnO2 film 2 is set lager than or equal to 0.5 times the resistivity of the first semiconductor layer, and the thickness of the bonding layer is set larger than or equal to 80nm and smaller than or equal to 2000nm. Thereby light emitting characteristics (luminous intensity, transmittance, luminous intensity distribution) can be improved.
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公开(公告)号：JPH0618421A
公开(公告)日：1994-01-25
申请号：JP17273792
申请日：1992-06-30
Applicant: TOSHIBA CORP
Inventor： SAKAI TADASHI , YAGI HITOSHI
Abstract: PURPOSE:To provide a solution ingredient sensor that can achieve its miniaturization by making respective elements such as an emission light source, a subject solution cell, a light receiving parts or the like integrally into one body. CONSTITUTION:This solution ingredient sensor is provided with a luminous element 2 exciting a porous semiconductor for emission, a subject solution passage 10 being installed so as to traverse an optical path out of this luminous element, and running a subject solution colored according to the concentration of a measuring objective ingredient, and a light receiving element 7 receiving a light out of the luminous element transmitted through the subject solution and converting it into an electric output. The luminous element 2, light receiving element 7 and subject solution passage 10 are integrated and formed in two semiconductor substrates 1 and 6 of one body or a laminated structure, and they are constituted so as to measure the concentration of the measuring objective ingredient by means of intensity of a light after being transmitted through the subject solution.
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公开(公告)号：JPH057700A
公开(公告)日：1993-01-19
申请号：JP25101691
申请日：1991-09-30
Applicant: TOSHIBA HEATING APPLIANCES CO , TOSHIBA CORP
Inventor： SAKAI TADASHI , HASEGAWA SHIGERU , WADA NORIO , AMANO KAZUNORI , IKEDA KOICHIRO
Abstract: PURPOSE:To provide the bedclothes drying machine which can efficiently dry bedclothes in a closet and can prevent uncomfortable smell from being generated or the temperature of the bedclothes from being raised more than needed. CONSTITUTION:A case 11 is provided with an inlet 18, outlet 19 and air path 17 to communicate these inlet 18 and outlet 19, a circulation fan 37 is provided to circulate air in a closet 1 from the above-mentioned inlet 18 through the air path 17 to the outlet 19, and a thermo-module 22 is provided as a cooling device to bedew and dehumidify moisture in the circulating in the above- mentioned air path 17 in the middle of the said air path 17.
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Patent Agency Ranking
公开(公告)号：JPH04318451A
公开(公告)日：1992-11-10
申请号：JP8637591
申请日：1991-04-18
Applicant: TOSHIBA CORP
Inventor： SAKAI TADASHI , AMAMIYA ISAO , YAGI HITOSHI
IPC: G01N27/28 , B81B1/00 , G01N27/403 , G01N27/414 , G01N33/483
Abstract: PURPOSE:To prevent a component analyzing device from being affected by disturbance noise, temperature changes, etc., so as to reduce the amount of a solution to be analyzed by providing solution component sensors on two solution transfusing lines and a common comparison electrode to the solution component sensors and independently sucking the solution from each liquid transfusing line. CONSTITUTION:The output of each solution component sensor 3a and 3b to 6a and 6b is calibrated in a state where all solution transfusing lines 2a and 2b are filled up with a calibration solution and the offset and sensitivity differences among the outputs of the sensors for the same kind of objects to be detected, namely, between the sensors 3a and 3b to 6a and 6b are adjusted. When the suction port of a suction nozzle 1 is dipped in a solution to be analyzed and the solution is sucked from arbitrary one line 2a or 2b, the solution to be analyzed can be selectively led to the line 2a or 2b only. A differential output is obtained by performing measurement under such condition and comparing the output of the component sensor which is in contact with the solution to be analyzed with the output of the same kind of component sensor of the line 2a or 2b which is in contact with the calibration solution. Therefore, disturbance noise and temperature changes generated along the lines 2a and 2b can be canceled and a stable output can be obtained.
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公开(公告)号：JPH04264261A
公开(公告)日：1992-09-21
申请号：JP2426091
申请日：1991-02-19
Applicant: TOSHIBA CORP
Inventor： SAKAI TADASHI , AMAMIYA ISAO , YAGI HITOSHI
Abstract: PURPOSE:To eliminate need of a mechanism for diluting and facilitate highly accurate measurement by automatically diluting sample solution, calculating the rate of dilution from change in concentration of a reference component and correcting a sensor output. CONSTITUTION:A sensor 2 for sensing a component of interest in sample solution and a sensor m1 for sensing a reference component are provided at or downstream a junction of a tube 3 for sucking sample solution 4 such as blood serum and a tube 5 for supplying diluent. The sensor m1 has selectivity to components (m) which seldom exist in the sample solution or which excessively exists in the diluent against the sample solution. From difference between an output of the sensor m1 when only the diluent is introduced to the junction and an output when both the diluent and the sample are introduced, the rate of dilution of the sample solution by the diluent is calculated, whereby an output of the sensor 2 for the component of interest against the mixed solution is corrected.
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公开(公告)号：JPH02167454A
公开(公告)日：1990-06-27
申请号：JP24460989
申请日：1989-09-20
Applicant: TOSHIBA CORP
Inventor： AMAMIYA ISAO , SAKAI TADASHI , UNO SHIGEKI
Abstract: PURPOSE:To decrease the influence of the component ion concn. and ion intensity of a soln. and to make stable measurement of the desired ion concn. by using a siloxane copolymer film as the film which does not sense the soln. component of an FET for reference. CONSTITUTION:This sensor is constituted by integrally forming an ISFET (ion sensitive FET) 1 and the FET 2 for reference in order to maintain the specified potential of the soln. of the same silicon substrate 6. An SiO2 film 7 and an SiN film 8 are formed as a gate insulating film via silicon layer 101, 102 formed via the SiO2 film 7 on this substrate 6 and the FET 1 is constituted with the film 8 as an H ion sensitive film. The siloxane copolymer film 9 is formed as the film which is not sensitive to the soln. component in the gate region of the FET 2. The phase boundary potential thereof is less affected by the component ion concn. and ion intensity of the soln. and the approximately specified output is produced. The desired concn. is, therefore, stably detected without being affected by the concn. and intensity of the disturbing ions by making combination use of the FETs 1, 2.
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公开(公告)号：JPH01250852A
公开(公告)日：1989-10-05
申请号：JP7933188
申请日：1988-03-31
Applicant: TOSHIBA CORP
Inventor： AWANO HIROSHI , KAWABATA YUKA , SAKAI TADASHI
IPC: G01N27/12
Abstract: PURPOSE:To obtain the sensor which has small variance in quality and is hardly disturbed by ethanol by using such a material that metal oxide mixed with a ceramic adhesive contains 40-80mol% aluminum based upon all metal elements. CONSTITUTION:The pattern of a heating body 5 is printed on an alumina substrate first, thick film paste of alumina is printed thereupon in a film shape, and comb-shaped counter electrodes are printed and baked in a reducible atmosphere to manufacture a ceramic insulating substrate 1. Then paste obtained by adding turpentine oil to mixture of 2-ethyl hexanoic acid tin and niobium resinite is printed and baked on the counter electrodes 2 on the substrate 1 to form a metal oxide film 3. Then a baked body of a paste film, i.e. the catalyst film 4 is formed on the metal oxide film 3 by adding a water-soluble platinum group compound to the ceramic adhesive which contains 40-80mol% aluminum in a metal oxide mixed as a solid component while water is used as a dispersant based upon all metal elements. Then the gas sensing element where the film 4 is formed is put in the package to obtain the sensor.
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公开(公告)号：JPH01250849A
公开(公告)日：1989-10-05
申请号：JP7871588
申请日：1988-03-31
Applicant: TOSHIBA CORP
Inventor： SAKAI TADASHI , UNO SHIGEKI , NAKAMURA NANAO , KOYAMA MASAO
IPC: G01N27/00 , G01N27/06 , G01N27/414
Abstract: PURPOSE:To obtain the sensor which has the excellent controllability of the film thickness, etc., of the gate insulating film of the sensitive part and does not allow the stagnation of a soln. by using a directly joined wafer, forming the sensitive part on the surface of a substrate and providing apertures to the other substrate. CONSTITUTION:This sensor is constituted with an ion-selecting FET (ISFET) by using the semiconductor wafer obtd. by direct joining via the insulating film between the 1st and 2nd semiconductor substrates 1 and 2. The ISFET has the ion sensitive gate part 8 on the front side of the 1st substrate 1, is formed with source, drain layers 51, 52 at the depth down to the rear face of the 1st substrate 1 and has source, drain electrodes 71, 72 which respectively come into contact with the source, drain 51, 52 on the 1st substrate 1 side through the apertures 41, 42 formed on the 2nd substrate 2 side. Since the sensitive part 8 is formed on the flat surface, the ISFET has the excellent uniformity and controllability of the film thickness of the gate insulating film. The sensor which obviates the stationation of the soln. in the sensitive part 8 is obtd.
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