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    Precise definition of transducer electrodes
    102.
    发明授权
    Precise definition of transducer electrodes 有权
    传感器电极的精确定义

    公开(公告)号：US09507142B2

    公开(公告)日：2016-11-29

    申请号：US14410211

    申请日：2013-06-12

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： Peter Agren

    IPC: G02B26/08 ,  H01L23/48 ,  B81B3/00 ,  B81C1/00 ,  G01D5/24 ,  H01L23/522

    CPC classification number: G02B26/0841 ,  B81B3/0021 ,  B81B3/0045 ,  B81B2201/02 ,  B81B2201/03 ,  B81B2203/04 ,  B81C1/00357 ,  B81C1/00619 ,  G01D5/24 ,  G02B26/085 ,  H01L23/481 ,  H01L23/5225 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.

    Abstract translation: 半导体器件包括具有第一（12a）和第二（12b）侧的半导体衬底（10）。 提供至少一个通过具有第一（16a）和第二（16b）端面的基板延伸的通孔（15），第一端面（16a）构成用于与可移动元件（14）相互作用的换能器电极， 布置在基板（10）的第一侧（12a）处。 在衬底（10）的第一侧（12a）的至少一部分上设置有屏蔽（17），所述屏蔽/掩模（17）包括导电层（19a）和绝缘材料层（19b） 在所述基板（10）和所述导电层（19a）之间。 掩模具有仅露出通孔的第一表面（16a）的一部分的开口（18）。 优选地，掩模中的开口（18）与可移动元件精确对准，并且开口的区域被精确地限定。

    Method and applications of thin-film membrane transfer
    103.
    发明授权
    Method and applications of thin-film membrane transfer 有权
    薄膜转移的方法与应用

    公开(公告)号：US09391423B2

    公开(公告)日：2016-07-12

    申请号：US14541071

    申请日：2014-11-13

    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

    Inventor： Vladimir Bulovic ,  Jeffrey Hastings Lang ,  Apoorva Murarka ,  Annie I-Jen Wang ,  Wendi Chang

    IPC: H01L29/84 ,  G01L11/02 ,  H01S3/106 ,  H01S3/0933 ,  H01S3/0941 ,  H01S3/07 ,  H01S3/08 ,  H01S3/16 ,  H01S3/13 ,  H01S3/105 ,  G02B26/00 ,  G01L9/00 ,  B81C1/00

    CPC classification number: H01S3/1053 ,  B81B2201/02 ,  B81B2201/042 ,  B81C1/00158 ,  B81C1/00634 ,  B81C2201/0194 ,  G01L1/24 ,  G01L9/0005 ,  G01L9/0072 ,  G01L11/02 ,  G02B26/001 ,  H01L29/84 ,  H01S3/07 ,  H01S3/08059 ,  H01S3/0933 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/1305 ,  H01S3/16 ,  H01S3/1693

    Abstract: The disclosure relates to method and apparatus for micro-contact printing of micro-electromechanical systems (“MEMS”) in a solvent-free environment. The disclosed embodiments enable forming a composite membrane over a parylene layer and transferring the composite structure to a receiving structure to form one or more microcavities covered by the composite membrane. The parylene film may have a thickness in the range of about 100 nm-2 microns; 100 nm-1 micron, 200-300 nm, 300-500 nm, 500 nm to 1 micron and 1-30 microns. Next, one or more secondary layers are formed over the parylene to create a composite membrane. The composite membrane may have a thickness of about 100 nm to 700 nm to several microns. The composite membrane's deflection in response to external forces can be measured to provide a contact-less detector. Conversely, the composite membrane may be actuated using an external bias to cause deflection commensurate with the applied bias. Applications of the disclosed embodiments include tunable lasers, microphones, microspeakers, remotely-activated contact-less pressure sensors and the like.

    Abstract translation: 本公开涉及在无溶剂环境中微机电系统（“MEMS”）的微接触印刷的方法和装置。 所公开的实施方案使得能够在聚对二甲苯层上形成复合膜并将复合结构转移到接收结构以形成由复合膜覆盖的一个或多个微腔。 聚对二甲苯膜的厚度可以在约100nm-2微米的范围内; 200nm-1微米，200-300nm，300-500nm，500nm至1微米和1-30微米。 接下来，在聚对二甲苯之上形成一个或多个二次层以产生复合膜。 复合膜可以具有约100nm至700nm至几微米的厚度。 可以测量复合膜的响应于外力的偏转以提供无接触检测器。 相反，可以使用外部偏压来致动复合膜，以产生与施加的偏压相称的偏转。 所公开的实施例的应用包括可调激光器，麦克风，微型扬声器，远程激活的无接触压力传感器等。

    SEMICONDUCTOR GAS SENSOR DEVICE AND MANUFACTURING METHOD THEREOF
    104.
    发明申请
    SEMICONDUCTOR GAS SENSOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体气体传感器装置及其制造方法

    公开(公告)号：US20150377813A1

    公开(公告)日：2015-12-31

    申请号：US14725842

    申请日：2015-05-29

    Applicant: STMicroelectronics S.r.l.

    Inventor： Pasquale Biancolillo ,  Angelo Recchia ,  Pasquale Franco ,  Antonio Cicero ,  Giuseppe Bruno

    IPC: G01N27/18 ,  B81C1/00 ,  G01N33/00 ,  B81B7/00

    CPC classification number: G01N27/18 ,  B81B7/02 ,  B81B7/04 ,  B81B2201/02 ,  B81B2201/0278 ,  G01N30/66 ,  G01N33/0027

    Abstract: A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.

    Abstract translation: 半导体气体传感器装置包括由相对的第一和第二半导体衬底切片包围的第一腔体。 提供至少一个导电细丝以在第一腔上延伸，并且设置通道以允许气体进入第一腔。 传感器装置还可以包括被相对的第一和第二半导体衬底切片气密地包围的第二腔体。 提供至少另一个导电细丝以在第二腔上延伸。

    Sensor package and method of forming same
    105.
    发明授权
    Sensor package and method of forming same 有权
    传感器封装及其形成方法

    公开(公告)号：US09040355B2

    公开(公告)日：2015-05-26

    申请号：US13546902

    申请日：2012-07-11

    Applicant: Philip H. Bowles ,  Paige M. Holm ,  Stephen R. Hooper ,  Raymond M. Roop

    Inventor： Philip H. Bowles ,  Paige M. Holm ,  Stephen R. Hooper ,  Raymond M. Roop

    IPC: H01L21/00 ,  B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0006 ,  B81B7/0077 ,  B81B2201/02 ,  B81C1/0023 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A method (70) of forming sensor packages (20) entails providing a sensor wafer (74) having sensors (30) formed on a side (26) positioned within areas (34) delineated by bonding perimeters (36), and providing a controller wafer (82) having control circuitry (42) at one side (38) and bonding perimeters (46) on an opposing side (40). The bonding perimeters (46) of the controller wafer (82) are bonded to corresponding bonding perimeters (36) of the sensor wafer (74) to form a stacked wafer structure (48) in which the control circuitry (42) faces outwardly. The controller wafer (82) is sawn to reveal bond pads (32) on the sensor wafer (74) which are wire bonded to corresponding bond pads (44) formed on the same side (38) of the wafer (82) as the control circuitry (42). The structure (48) is encapsulated in packaging material (62) and is singulated to produce the sensor packages (20).

    Abstract translation: 形成传感器封装（20）的方法（70）需要提供传感器晶片（74），传感器晶片（74）具有形成在位于通过接合周边（36）所描绘的区域（34）内的侧面（26）上的传感器（30），并且提供控制器 具有在一侧（38）处的控制电路（42）和在相对侧（40）上的接合周边（46）的晶片（82）。 控制器晶片（82）的接合周边（46）被接合到传感器晶片（74）的对应的接合周边（36），以形成其中控制电路（42）面向外的堆叠的晶片结构（48）。 锯切控制器晶片（82）以露出传感器晶片（74）上的接合焊盘（32），该接合焊盘引线键合到形成在晶片（82）的同一侧（38）上的对应接合焊盘（44） 电路（42）。 结构（48）被封装在包装材料（62）中，并被分割以产生传感器封装（20）。

    ELECTRODE ASSEMBLY
    106.
    发明申请
    ELECTRODE ASSEMBLY 有权
    电极组件

    公开(公告)号：US20120024571A1

    公开(公告)日：2012-02-02

    申请号：US13130878

    申请日：2009-11-30

    Applicant: Neville John Freeman ,  Andrew Raymond Mount ,  Anthony John Walton ,  Jonathan Gordon Terry

    Inventor： Neville John Freeman ,  Andrew Raymond Mount ,  Anthony John Walton ,  Jonathan Gordon Terry

    IPC: H01B5/02 ,  H01B13/00

    CPC classification number: G01N27/307 ,  B81B2201/02 ,  B81B2203/04 ,  C25B11/02

    Abstract: The present invention relates to an electrode assembly having a laminate structure comprising: a first insulating capping layer; a first conducting layer capped by the first insulating capping layer and substantially sandwiched by at least the first insulating capping layer such as to leave exposed only an electrical contact lip of the first conducting layer; and an array of etched voids extending through at least the first insulating capping layer and the first conducting layer, wherein each void is partly bound by a surface of the first conducting layer which acts as an internal submicron electrode.

    Abstract translation: 本发明涉及一种具有叠层结构的电极组件，包括：第一绝缘覆盖层; 第一导电层被第一绝缘覆盖层覆盖，并且至少基本上被第一绝缘覆盖层夹持，以便仅露出第一导电层的电接触唇; 以及延伸穿过至少第一绝缘覆盖层和第一导电层的蚀刻空隙的阵列，其中每个空隙部分地由作为内部亚微米电极的第一导电层的表面结合。

    Sensor output digitizer
    109.
    发明授权
    Sensor output digitizer 有权

    公开(公告)号：US11933648B2

    公开(公告)日：2024-03-19

    申请号：US17345778

    申请日：2021-06-11

    Applicant: INVENSENSE, INC.

    Inventor： Federico Mazzarella ,  Massimiliano Musazzi

    IPC: H03M1/00 ,  B81B7/02 ,  G01D9/32 ,  H03M1/14 ,  H03M1/16 ,  H03M1/46

    CPC classification number: G01D9/32 ,  B81B7/02 ,  B81B2201/02 ,  H03M1/145 ,  H03M1/16 ,  H03M1/462 ,  H03M1/466

    Abstract: The described technology is generally directed towards a sensor output digitizer. The sensor output digitizer can comprise a multiplexer stage, a multi-stage analog to digital converter, and a digital output combiner. The multiplexer stage can be configured to sequentially select sensor outputs from one or more sensors, resulting in a stream of selected sensor outputs. The multi-stage analog to digital converter can be coupled with the multiplexer stage, and can be configured to convert the stream of selected sensor outputs into a stream of digitized outputs. The digital output combiner can be configured to re-scale and sum intermediate outputs of the multi-stage analog to digital converter to produce a stream of digitized sensor outputs.

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