Abstract:
A doubly bent X-ray spectroscopic device (1) according to the present invention includes: a glass plate (3) which is deformed into a shape having a doubly bent surface by being sandwiched between a doubly curved convex surface (21a) of a convex forming die (21) and a doubly curved concave surface (22a), of a concave forming die (22), that matches the doubly curved convex surface (21a), and being heated to a temperature of 400° C. to 600° C.; and a reflection coating (5) configured to reflect X-rays, which is formed on a concave surface (3a) of the deformed glass plate (3 ).
Abstract:
A reflective mirror is provided with a base and a multilayer film including a first layer and a second layer laminated alternately on the base and capable of reflecting at least a portion of incident light. The multilayer film is provided with a first portion having a first thickness, and with a second portion having a second thickness that is different from the first thickness, and which is provided at a position rotationally symmetric to that of the first portion about an optical axis of the reflective mirror.
Abstract:
A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.
Abstract:
A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.
Abstract:
Systems and methods are provided for staining tissue with multiple biologically specific heavy metal stains and then performing X-ray imaging, either in projection or tomography modes, using either a plurality of illumination energies or an energy sensitive detection scheme. The resulting energy-weighted measurements can then be used to decompose the resulting images into quantitative images of the distribution of stains. The decomposed images may be false-colored and recombined to make virtual X-ray histology images. The techniques thereby allow for effective differentiation between two or more X-ray dyes, which had previously been unattainable in 3D imaging, particularly 3D imaging of features at the micron resolution scale. While techniques are described in certain example implementations, such as with microtomography, the techniques are scalable to larger fields of view, allowing for use in 3D color, X-ray virtual histology of pathology specimens.
Abstract:
A grazing incidence reflector (300) for EUV radiation includes a first mirror layer (310) and a multilayer mirror structure (320) beneath the first mirror layer. The first mirror layer reflects at least partially EUV radiation incident on the reflector with grazing incidence angles in a first range, and the first mirror layer transmits EUV radiation in a second range of incidence angles, which overlaps and extends beyond the first range of incidence angles. The multilayer mirror structure reflects EUV radiation that is incident on the reflector with grazing incidence angles in a second range that penetrates through the first mirror layer. A grazing incidence reflector can be used in a lithographic apparatus and in manufacturing a device by a lithographic process.
Abstract:
A reflective mirror is provided with a base and a multilayer film including first layers and second layers laminated alternately on the base and capable of reflecting at least a portion of the incident light. The multilayer film is provided with a first portion having a first thickness, and with a second portion which has a second thickness different from the first thickness and which is provided at a position rotationally symmetric to that of the first portion about the optical axis of the reflective mirror relative.
Abstract:
There are provided an EUV optical member, in which deterioration in the reflectivity due to oxidation of the Ru protective layer is prevented, a functional film-equipped substrate to be employed for production of the EUV optical member, and a process for producing the functional film-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 20 at % of oxygen and from 80 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
Abstract:
An X-ray waveguide system capable of forming X-rays having spatial coherence of a large space region has an X-ray collecting optical element which collects incident X-rays; and an X-ray waveguide containing a core and claddings and wave-guiding a collected X-ray collected by the X-ray collecting optical element, in which the core of the X-ray waveguide is a periodic structure body in which a plurality of basic structures containing substances different in the refractive-index real part are periodically disposed, the total reflection critical angle of the collected X-ray at the interface of the core and the cladding is equal to or larger than the Bragg angle corresponding to the period of the core, and the collection angle of the collected X-ray entering the X-ray waveguide is as large as or larger than the double of the Bragg angle.
Abstract:
A multilayer mirror for use in device lithography is configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4 nm to about 7.2 nm. The multilayer mirror has a plurality of alternating layers of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface therebetween at temperatures less than 300° C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.