公开(公告)号：US5578185A

公开(公告)日：1996-11-26

申请号：US383408

申请日：1995-01-31

Applicant: David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

Inventor： David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  C25D5/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer, a metal gate layer positioned on a top surface of the insulating layer and a gate encapsulation layer positioned on a top surface of the metal gate layer. A plurality of gates are provided and define a plurality of apertures on the top of the insulating layer. A plurality of spacers are formed in the apertures at their edges on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and form a plurality of pores in the insulating layer. The pores are plated with a filament material to create a plurality of filaments. The pores can be overplated to create the plurality of filaments. The filaments are vertically self-aligned in the pores.

Abstract translation: 提供了一种用于产生用于场致发射显示器的门控灯丝结构的方法。 提供了一种多层结构，其包括基板，绝缘层，位于绝缘层的顶表面上的金属栅极层和位于金属栅极层顶表面上的栅极封装层。 提供多个栅极并且在绝缘层的顶部上限定多个孔。 在绝缘层的顶表面上的边缘处的孔中形成多个间隔物。 间隔物用作蚀刻绝缘层并在绝缘层中形成多个孔的掩模。 用细丝材料电镀细孔以产生多根长丝。 孔可以被过度铺展以产生多根细丝。 细丝在孔中垂直自对准。

公开(公告)号：US5552659A

公开(公告)日：1996-09-03

申请号：US269312

申请日：1994-06-29

Applicant: John M. Macaulay ,  Christopher J. Spindt ,  Patrick A. Corcoran ,  Lee H. Veneklasen

Inventor： John M. Macaulay ,  Christopher J. Spindt ,  Patrick A. Corcoran ,  Lee H. Veneklasen

IPC: H01J3/02 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: An electron emitter contains a gate layer (38), an underlying dielectric layer (36), an intermediate non-insulating layer (34) situated below the dielectric layer, and a lower non-insulating region (32) situated below the intermediate non-insulating layer. A multiplicity of electron-emissive particles (42) are situated over the non-insulating region at the bottom of an opening (40) extending through the three layers. The ratio of the thickness of the dielectric layer to the thickness of the intermediate non-insulating layer is in the range of 1:1 to 4:1, while the ratio of the mean diameter of the opening to the thickness of the intermediate non-insulating layer is in the range 1:1 to 10:1. The presence of the intermediate non-insulating layer improves the collimation of the beam of electrons emitted from the electron-emissive elements. The electron emitter is manufactured according to a simple, readily controllable process.

Abstract translation: 电子发射器包括栅极层（38），下面的介电层（36），位于电介质层下面的中间非绝缘层（34）和位于中间非绝缘层下面的下部非绝缘区域（32） 绝缘层。 多个电子发射颗粒（42）位于延伸穿过三层的开口（40）底部的非绝缘区域的上方。 介电层的厚度与中间非绝缘层的厚度之比在1：1至4：1的范围内，而开口的平均直径与中间非绝缘层的厚度之比 绝缘层的范围为1：1至10：1。 中间非绝​​缘层的存在改善了从电子发射元件发射的电子束的准直。 电子发射器是根据简单易操控制造的。

公开(公告)号：US5548185A

公开(公告)日：1996-08-20

申请号：US458854

申请日：1995-06-02

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J19/24

CPC classification number: H01J1/3042 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/3165 ,  H01J2201/319 ,  H01J2329/8625

Abstract: A flat panel display of a field emission type having a triode (three terminal) structure and useful as a device for displaying visual information is disclosed. The display includes a plurality of corresponding light-emitting anodes and field-emission cathodes, each of the anodes emitting light in response to emission from each of the corresponding cathodes, each of the cathodes including a layer of low work function material having a relatively flat emission surface which includes a plurality of distributed localized electron emission sites and a grid assembly positioned between the corresponding anodes and cathodes to thereby control emission levels to the anodes from the corresponding cathodes. In the preferred embodiment of the invention, the layer of low work function material is amorphic diamond film. The grid assembly includes a conductive layer deposited between the plurality of anodes and cathodes and over interstices between the cathodes, the conductive layer having apertures therein, the cathodes aligned with, and of the same size as, the apertures.

Abstract translation: 公开了一种具有三极管（三端子）结构的场发射型平板显示器，并且可用作显示视觉信息的装置。 显示器包括多个对应的发光阳极和场发射阴极，每个阳极响应于每个相应阴极的发射而发光，每个阴极包括具有相对平坦的低功函数材料层 发射表面，其包括多个分布的局部电子发射位点和位于相应阳极和阴极之间的栅格组件，从而控制来自相应阴极的阳极的发射水平。 在本发明的优选实施例中，低功函数材料层是非晶金刚石膜。 栅格组件包括沉积在多个阳极和阴极之间的导电层以及阴极之间的间隙，导电层在其中具有孔，阴极与孔对准并具有与孔相同的尺寸。

公开(公告)号：US5536193A

公开(公告)日：1996-07-16

申请号：US264386

申请日：1994-06-23

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/304 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A field emitter comprising an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.

Abstract translation: 公开了一种场致发射器，其包括与导电金属的平坦表面接触并从其突出的暴露的宽带隙发射区域，以及制造方法。 合适的宽带隙材料（2.5-7.0电子伏特）包括金刚石，氮化铝和氮化镓; 合适的导电金属包括钛，钨，金和石墨。 该方法包括将宽带隙材料设置在基板上，将导电金属设置在宽带隙材料上，蚀刻导电金属以暴露宽带隙发射区域。 发射区域非常适合大面积平板显示器。

公开(公告)号：US5331172A

公开(公告)日：1994-07-19

申请号：US128975

申请日：1993-09-29

Applicant: Nalin Kumar ,  Chenggang Xie ,  Rama R. Goruganthu ,  Mohammed K. Ghazi

Inventor： Nalin Kumar ,  Chenggang Xie ,  Rama R. Goruganthu ,  Mohammed K. Ghazi

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/00 ,  H01J37/30

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01J2201/30457 ,  H01L2224/11822 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H05K3/0023 ,  H05K3/0041

Abstract: Ionized metal cluster beam deposition of metal bumps on substrates such as multi-chip modules and integrated circuit chips is enhanced. The present invention discloses wet etching techniques for removing unwanted metal deposited on the substrate around bumps, multiple sources for depositing alloyed (tin-lead) bumps with constant composition, and single or multiple sources for directing a cluster beam through an aperture to deposit metal on a substrate and directing an ion beam at the aperture to remove metal deposited therein.

Abstract translation: 提高了诸如多芯片模块和集成电路芯片的衬底上的金属凸块的电离金属簇束沉积。 本发明公开了用于去除沉积在凸起周围的衬底上的不需要的金属的湿蚀刻技术，用于沉积具有恒定组成的合金化（锡 - 铅）凸块的多个源以及用于引导聚束束穿过孔以将金属沉积在其上的单个或多个源 一个衬底，并将一个离子束引导到该孔处以除去沉积在其中的金属。

公开(公告)号：US5312514A

公开(公告)日：1994-05-17

申请号：US52958

申请日：1993-04-23

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J9/02 ,  H05K3/00 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J2201/30407 ,  H01J2201/30457 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H05K3/0023 ,  H05K3/0041

Abstract: Method of making a field emitter device with submicron low work function emission tips without using photolithography. The method includes depositing in situ by evaporating or sputtering a discontinuous etch mask comprising randomly located discrete nuclei. In one embodiment an ion etch is applied to a low work function material covered by a discontinuous mask to form valleys in the low work function material with pyramid shaped emission tips therebetween. In another embodiment an ion etch is applied to an electrically conductive base material covered by a discontinuous mask to form valleys in the base material with pyramid shaped base tips therebetween. The base material is then coated with a low work function material to form emission tips thereon.

Abstract translation: 制造具有亚微米低功函数发射尖端而不使用光刻的场发射极器件的方法。 该方法包括通过蒸发或溅射包含随机定位的离散核的不连续蚀刻掩模来原位沉积。 在一个实施例中，离子蚀刻被施加到由不连续掩模覆盖的低功函数材料，以在其中具有金字塔形发射尖端的低功函数材料中形成谷。 在另一个实施例中，离子蚀刻被施加到由不连续掩模覆盖的导电基底材料，以在基底材料中形成具有金字塔形基底尖端的谷部。 然后用低功函数材料涂覆基材以在其上形成发射末端。

公开(公告)号：US5290610A

公开(公告)日：1994-03-01

申请号：US834749

申请日：1992-02-13

Applicant: Robert C. Kane ,  James E. Jaskie

Inventor： Robert C. Kane ,  James E. Jaskie

IPC: C30B29/04 ,  C23C16/27 ,  C23C16/503 ,  H01J1/30 ,  H01J9/02 ,  H01J37/317 ,  B05D3/06 ,  B01J3/06 ,  B05D5/12 ,  C23C16/00

CPC classification number: C23C16/272 ,  C23C16/503 ,  H01J37/3178 ,  H01J9/025 ,  H01J2201/30457

Abstract: Depositing a diamond film on an electron emitting tip including disposing hydrocarbon and etchant reactant gasses together with the tip in a reaction vessel and providing an external voltage source such that electrons, emitted from the electron emitter, disassociate hydrocarbon constituents of the reactant gas. The constituents accelerate toward and are deposited onto the tip and are selectively etched by the etchant constituents such that only the diamond form of the deposited carbon remains.

Abstract translation: 将金刚石膜沉积在电子发射尖端上，包括将碳氢化合物和蚀刻剂反应物气体与尖端一起放置在反应容器中并提供外部电压源，使得从电子发射器发射的电子解离反应气体的烃组分。 组分加速朝向并沉积在尖端上，并被蚀刻剂组分选择性地蚀刻，使得仅保留沉积碳的金刚石形式。

公开(公告)号：WO2007055451A1

公开(公告)日：2007-05-18

申请号：PCT/KR2006/002511

申请日：2006-06-28

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE ,  SONG, Yoon Ho ,  JEONG, Jin Woo ,  KIM, Dae Jun ,  LEE, Jin Ho ,  KANG, Kwang Yong

Inventor： SONG, Yoon Ho ,  JEONG, Jin Woo ,  KIM, Dae Jun ,  LEE, Jin Ho ,  KANG, Kwang Yong

IPC: H01J1/30

CPC classification number: G09G3/22 ,  B82Y10/00 ,  G09G2300/08 ,  H01J31/127 ,  H01J2201/30457 ,  H01J2201/30469 ,  H01J2201/319

Abstract: Provided is a field emission display (FED) in which field emission devices are applied to a flat panel display. The FED includes: a cathode plate including a substrate, first and second thin film transistors (TFTs) that are serially connected on the substrate, a field emitter disposed on a drain electrode of the second TFT, a gate insulating layer having a gate hole surrounding the field emitter, and field emission gate electrodes disposed on the gate insulating layer; and an anode plate including a substrate, and red, green, and blue phosphors disposed on the substrate, wherein the cathode plate and the anode plate are vacuum-packaged parallel and opposite to each other. According to the present invention, uniformity of the FED panel can be significantly improved, and an inherent source-drain leakage current of the TFT can be significantly reduced, so that a contrast ratio of the FED can be significantly enhanced.

Abstract translation: 提供了一种场致发射显示器（FED），其中场发射装置被应用于平板显示器。 FED包括：包括衬底的阴极板，串联在衬底上的第一和第二薄膜晶体管（TFT），设置在第二TFT的漏电极上的场致发射体，栅极绝缘层，具有围绕 所述场致发射体和设置在所述栅极绝缘层上的场致发射栅电极; 以及包括基板的阳极板和设置在基板上的红色，绿色和蓝色荧光体，其中阴极板和阳极板被彼此平行并相对地真空包装。 根据本发明，可以显着提高FED面板的均匀性，并且能够显着地降低TFT的固有源漏漏电流，从而可以显着提高FED的对比度。

公开(公告)号：WO02031839A1

公开(公告)日：2002-04-18

申请号：PCT/US2001/031528

申请日：2001-10-09

IPC: B82B1/00 ,  B01J3/06 ,  C01B31/06 ,  C23C16/27 ,  C30B25/10 ,  H01B1/04 ,  H01J1/30 ,  H01J1/304 ,  H01J31/12 ,  H01J35/06 ,  H01J37/073 ,  H01M4/02

CPC classification number: C23C16/274 ,  B01J3/067 ,  B01J2203/0655 ,  C01B32/25 ,  C23C16/277 ,  C23C16/278 ,  C23C16/279 ,  C30B25/105 ,  C30B29/04 ,  C30B29/605 ,  H01B1/04 ,  H01J1/30 ,  H01J2201/30457

Abstract: An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10 atoms/cm of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.

Abstract translation: 公开了具有不小于10 19原子/ cm 3的氮的导电n型超微晶金刚石（UNCD）。 制造n掺杂UNCD的方法。 还公开了可预测地控制电导率的方法。

公开(公告)号：WO99034385A1

公开(公告)日：1999-07-08

申请号：PCT/EP1998/008403

申请日：1998-12-22

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: The present invention relates to a field electron emitter consisting of diamond and graphite-like carbon. According to the present invention said emitter has within its volume a uniform composition of diamond particles bonded by graphite-like carbon. The present invention also relates to a method of manufacturing such a field electron emitter by heat treating an intermediate body in gaseous hydrocarbon.

Abstract translation: 本发明涉及由金刚石和石墨状碳组成的场电子发射体。 根据本发明，所述发射体在其体积内具有由石墨状碳结合的金刚石颗粒的均匀组成。 本发明还涉及通过在气态烃中热处理中间体来制造这种场致电子发射体的方法。