公开(公告)号：US20160280992A1

公开(公告)日：2016-09-29

申请号：US14901496

申请日：2014-10-21

Applicant: OSAKA PREFECTURE UNIVERSITY Public Corporation ,  YASU MEDICAL IMAGING TECHNOLOGY CO., LTD.

Inventor： Taketoshi KAWAI ,  Fumiaki KUNIMOTO

IPC: C09K11/62 ,  B32B37/10 ,  C09K11/61

CPC classification number: C09K11/628 ,  B32B37/10 ,  B32B2307/416 ,  C09K11/616

Abstract: An additive containing an ion as a luminescence center is added to alkali halide powder as a base material. Mechanical energy for applying an impact force, a shearing force, a shear stress, or a friction force is applied so as to grind or mix the alkali halide powder and the additive. The ion as the luminescence center is doped into the alkali halide as the base material so as to obtain alkali halide-based scintillator powder. With this process, the alkali halide-based scintillator powder can be manufactured at a room temperature in the atmospheric air without any complicated condition control or any process at a high temperature under high vacuum and a large-sized scintillator sheet can be produced.

Abstract translation: 将作为发光中心的离子的添加​​剂作为基材添加到卤化碱粉末中。 施加用于施加冲击力，剪切力，剪切应力或摩擦力的机械能，以研磨或混合碱金属卤化物粉末和添加剂。 将作为发光中心的离子作为基材掺杂到碱金属卤化物中，得到碱金属卤化物系闪烁体粉末。 通过该方法，碱卤化物系闪烁体粉末可以在大气中的室温下制造，无需任何复杂的条件控制，或者在高真空下的高温下进行任何处理，可以制造大尺寸的闪烁体片。

公开(公告)号：US20160268757A1

公开(公告)日：2016-09-15

申请号：US15062681

申请日：2016-03-07

Applicant: FUJIKURA LTD. ,  NIPPON TELEGRAPH AND TELEPHONE CORPORATION ,  OSAKA PREFECTURE UNIVERSITY PUBLIC CORPORATION

Inventor： Tsukasa Hosokawa ,  Kentaro Ichii ,  Katsuhiro Takenaga ,  Shoichiro Matsuo ,  Hirotaka Ono ,  Makoto Yamada

IPC: H01S3/067 ,  H01S3/094 ,  H01S3/16

CPC classification number: H01S3/06729 ,  G02B6/03611 ,  H01S3/06766 ,  H01S3/0804 ,  H01S3/094003 ,  H01S3/094069 ,  H01S3/09415 ,  H01S3/1608

Abstract: An optical fiber for amplification includes a core having an inner core and an outer core surrounding the outer circumferential surface of the inner core. The relative refractive index difference of the inner core to a cladding is smaller than the relative refractive index difference of the outer core to the cladding. The outer core is entirely doped with erbium. The theoretical cutoff wavelength of an LP11 mode light beam is a wavelength of 1,565 nm or more. The theoretical cutoff wavelength of an LP21 mode light beam is a wavelength of 1,530 nm or less. The theoretical cutoff wavelength of the LP02 mode light beam is a wavelength of 980 nm or less.

Abstract translation: 用于放大的光纤包括具有内芯和围绕内芯的外圆周表面的外芯的芯。 内芯与包层的相对折射率差小于外芯与包层的相对折射率差。 外芯完全掺铒。 LP11模式光束的理论截止波长为1,565nm以上的波长。 LP21模式光束的理论截止波长为1530nm以下的波长。 LP02模式光束的理论截止波长为980nm以下的波长。

公开(公告)号：US20150329564A1

公开(公告)日：2015-11-19

申请号：US14435678

申请日：2013-10-08

Applicant: Stella Pharma Corporation ,  Osaka Prefecture University Public Corporation

Inventor： Hiroshi TAKENAKA ,  Yoichiro OHTA ,  Yusuke TAGUCHI ,  Sayuri UEDA ,  Yuko ISHINO ,  Hideki NAKASHIMA ,  Kohki UEHARA ,  Mitsunori KIRIHATA

IPC: C07F5/02 ,  C07C229/08

CPC classification number: C07F5/025 ,  C07B59/001 ,  C07C229/08 ,  C07C229/36 ,  C07C251/24 ,  C07C271/22 ,  C07F5/027 ,  C07F5/04 ,  Y02P20/55

Abstract: Provided are: a novel chiral 4-boronophenylalanine (BPA) derivative; a method for producing the derivative; and a method for producing 18F-2-fluoro-4-borono-L-phenylalanine (18F-labeled BPA; 18F-BPA) using the derivative. A compound represented by formula (1) is prepared. In the formula, R represents BR3R4, BX3− or BX3−M+ (wherein X represents a halogen atom, and M+ represents a monovalent monoatomic cation, a polyatomic cation or a complex cation); R1 represents a hydrogen atom or a protecting group PG1; R2 represents a hydrogen atom or a protecting group PG2; R3 and R4 independently represent OH, or R3, R4 and B together form a ring that serves as a protecting group; and Y represents a halogen atom, NO2, NH2, Sn(R6)3, N═N—NR7R8, OSO2R9, NR10R11, a substituted or unsubstituted phenyliodo group or a substituted or unsubstituted heterocyclic iodo group. The compound is reacted with a fluorination reagent to prepare 18F-labeled BPA.

Abstract translation: 提供：新型手性4-硼苯丙氨酸（BPA）衍生物; 一种制备衍生物的方法; 以及使用该衍生物制备18F-2-氟-4-硼羟-L-苯丙氨酸（18F标记的BPA; 18F-BPA）的方法。 制备由式（1）表示的化合物。 在该式中，R表示BR 3 R 4，BX 3 - 或BX 3 -M +（其中X表示卤原子，M +表示一价单原子阳离子，多原子阳离子或络合阳离子）。 R1表示氢原子或保护基PG1; R2表示氢原子或保护基PG2; R3和R4独立地表示OH，或R3，R4和B一起形成用作保护基的环; Y表示卤素原子，NO 2，NH 2，Sn（R 6）3，N = N-NR 7 R 8，OSO 2 R 9，NR 10 R 11，取代或未取代的苯基碘基或取代或未取代的杂环碘基。 使化合物与氟化试剂反应以制备18F标记的BPA。

公开(公告)号：US20150257740A1

公开(公告)日：2015-09-17

申请号：US14634519

申请日：2015-02-27

Applicant: OSAKA PREFECTURE UNIVERISTY PUBLIC CORPORATION ,  PUBLIC UNIVERSITY CORPORATION OSAKA CITY UNIVERSITY ,  ADVANTEST CORPORATION

Inventor： Hiromichi HORINAKA ,  Hiroyasu MORIKAWA ,  Taiichiro IDA

IPC: A61B8/08 ,  A61B8/00 ,  A61B8/14 ,  A61B5/00

CPC classification number: A61B8/5223 ,  A61B8/08 ,  A61B8/4483 ,  A61B8/48 ,  A61B8/5207 ,  B06B1/0207 ,  B06B2201/76 ,  G01S7/52036 ,  G01S15/899

Abstract: A body fat diagnostic apparatus with which fat can be diagnosed safely is provided even in the case where a deep portion of the living body is diagnosed or there are bone tissues outside the measurement region. The body fat diagnostic apparatus is formed of: a probe 2 for emitting ultrasonic waves both for applying heat and for diagnosis; and an ultrasonic wave velocity change analyzing unit 15 for calculating the change in the velocity of ultrasonic waves in the measurement region on the basis of the ultrasonic wave echo signals acquired from the region before and after the application of heat using the probe 2, so that fat is diagnosed on the basis of the calculated change in the velocity of ultrasonic waves.

Abstract translation: 即使在诊断出生物体的深部或测定区域外的骨组织的情况下，也能够安全地诊断出脂肪的身体脂肪诊断装置。 身体脂肪诊断装置由以下部分构成：用于发射加热和诊断的超声波的探针2; 以及超声波速度变化分析部15，用于根据从使用探头2的热量施加前后的区域获取的超声波回波信号，计算测定区域内的超声波的速度变化，使得 基于计算出的超声波速度的变化来诊断脂肪。

公开(公告)号：US20140144972A1

公开(公告)日：2014-05-29

申请号：US13636176

申请日：2011-02-17

Applicant: OSAKA PREFECTURE UNIVERSITY PUBLIC CORPORATION ,  ISEL CO., LTD. ,  KINKI UNIVERSITY

Inventor： Takayuki Takasugi ,  Yasuyuki Kaneno ,  Sachio Oki ,  Keishi Kubo ,  Noboru Mochizuki ,  Tomotake Hirata

IPC: B23K20/12

CPC classification number: B23K20/1245 ,  B23K20/1255

Abstract: Provided are a friction processing tool in which a service life of the tool is improved and which can reduce a labor hour for manufacturing and a manufacturing cost, and a friction processing apparatus and a friction processing method using the same. In a friction working tool 20 for softening and processing workpieces W1 and W2 of a metal material by frictional heat generated by being pressed against the workpieces while being rotated, a cylindrical tool body 21 is provided, and a distal end surface of the tool body brought into contact with the workpieces W1 and W2 is formed only by a flat shoulder surface 22. The material of the friction processing tool 20 is made of Ni-based dual multi-phase intermetallic compound alloys.

Abstract translation: 提供了一种摩擦处理工具，其中提高了工具的使用寿命并且可以减少制造时的劳动时间和制造成本，以及使用其的摩擦处理装置和摩擦处理方法。 在用于通过在旋转时被压靠在工件上产生的摩擦热来软化和处理金属材料的工件W1和W2的摩擦加工工具20中，设置有圆柱形的工具主体21，并且工具主体的远端表面带来 与工件W1和W2接触仅由平坦的台肩表面22形成。摩擦处理工具20的材料由Ni基双相金属间化合物合金制成。

公开(公告)号：US20130334053A1

公开(公告)日：2013-12-19

申请号：US13974113

申请日：2013-08-23

Applicant: NITTO BOSEKI CO., LTD. ,  OSAKA PREFECTURE UNIVERSITY PUBLIC CORPORATION

Inventor： Kazuo KONDO ,  Takeyasu Saito ,  Naoki Okamoto ,  Masaru Bunya ,  Minoru Takeuchi

IPC: C25D5/18

CPC classification number: C25D5/18 ,  C25D3/38 ,  H01L21/2885 ,  H01L21/76861 ,  H01L21/76877 ,  H01L21/76898

Abstract: There is provided a method of well filling copper in a conductivity-rendered non-through hole having an aspect ratio (depth/hole diameter) of 5 or more on a substrate in a short period of time, and the method comprises using an acidic copper plating bath comprising a water-soluble copper salt, sulfuric acid, chlorine ion, a brightener and a copolymer of diallylamines and sulfur dioxide and filling copper in the non-through hole by periodic current reversal copper plating.

Abstract translation: 提供了一种在短时间内在衬底上具有5或更大的纵横比（深度/孔直径）的导电性非贯通孔中充满铜的方法，该方法包括使用酸性铜 包含水溶性铜盐，硫酸，氯离子，增白剂和二烯丙基胺和二氧化硫的共聚物的电镀浴，并通过周期性电流反转铜电镀在非贯通孔中填充铜。

公开(公告)号：US20040191966A1

公开(公告)日：2004-09-30

申请号：US10708593

申请日：2004-03-12

Applicant: OSAKA PREFECTURE, ,  HOSIDEN CORPORATION

Inventor： Katsutoshi IZUMI ,  Motoi NAKAO ,  Yoshiaki OHBAYASHI ,  Keiji MINE ,  Seisaku HIRAI ,  Fumihiko JOBE ,  Tomoyuki TANAKA

IPC: H01L021/336 ,  H05H001/46 ,  H01L021/20 ,  C30B001/00 ,  H01L021/36 ,  H01L021/00 ,  H01L021/84 ,  H05H001/30

CPC classification number: H01L21/7624 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/325 ,  C23C16/482 ,  C30B1/10 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/0445 ,  H01L21/2007 ,  H01L21/7602 ,  Y10T29/41

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract translation: 提供一种绝缘层与其制造装置接触的界面的平坦度优异的掩埋绝缘层型半导体碳化硅基板的制造方法。 在制造装置中，在该成膜室中配置具有位于硅衬底上的埋入绝缘层和形成在该埋置绝缘层上的表面硅层的SOI衬底。 制造装置包括：成膜室，其中放置SOI基板; 气体供给单元，用于将掩模绝缘层型半导体碳化硅基板的制造所需的各种气体供给到成膜室中; 红外线照射单元，其用红外线照射SOI衬底的表面硅层; 以及用于控制气体供给单元和红外线照射单元的控制部。

公开(公告)号：US20030148586A1

公开(公告)日：2003-08-07

申请号：US10351385

申请日：2003-01-27

Applicant: OSAKA PREFECTURE

Inventor： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC: H01L021/76 ,  H01L021/425

CPC classification number: H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130, of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1nullG2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract translation: 掩埋绝缘层型半导体碳化硅衬底的制造方法包括将具有预定厚度的具有表面硅层130的SOI衬底100和埋入绝缘体120放置在加热炉200中并且增加的步骤 同时将氢气G1和烃气G2的混合气体（G1 + G2）供给到加热炉200中，从而将SOI基板100的变形表面硅层130形成为单一的 晶体碳化硅薄膜140。

公开(公告)号：US20020185058A1

公开(公告)日：2002-12-12

申请号：US10159111

申请日：2002-06-03

Applicant: Osaka Prefecture

Inventor： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Fumihiko Jobe

IPC: C30B028/12 ,  C30B023/00 ,  C30B028/14 ,  C30B025/00

CPC classification number: C30B25/02 ,  C30B29/36

Abstract: To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.

Abstract translation: 经济地制造单晶碳化硅薄膜。 用于制造单晶碳化硅薄膜的装置包括适于接收用于成膜的SOI衬底100的成膜室200，用于供应制造单晶碳化硅所需的各种气体G1至G4的气体供给装置300 薄膜形成室200，用于处理氩气作为惰性气体G1的气体处理装置500，作为烃类气体G2的丙烷气体，作为载气的氢气和供给到膜的氧气G4 以及用于控制成膜室200的温度的温度控制装置400。

公开(公告)号：US3620944A

公开(公告)日：1971-11-16

申请号：US3620944D

申请日：1968-03-12

Applicant: OSAKA PREFECTURE

Inventor： TANITO KEIKO ,  KATO NORIO ,  KINOSHITA SHOSAKU ,  KINOSHITA MASAHIRO ,  SUNADA TSUYOSHI

IPC: C02F1/30 ,  C02F9/00 ,  B01J1/10

CPC classification number: C02F1/30 ,  C02F1/307 ,  C02F2101/12 ,  C02F2101/20 ,  C02F2101/306 ,  C02F2101/32

Abstract: A process for purifying polluted water by irradiating it with ionizing radiation. Water polluted with parathion, phenyl mercuric acetate or methyl mercuric chloride can be purified by irradiating it with ionizing radiation. The amount of irradiations required depends upon the concentration of polluted water to be purified. It is required about 1,000,000 rads to reduce such a high concentration of polluted water as industrial waste water; about 100,000 to 500,000 rads to reduce a medium concentration of polluted water such as sewerage; about 5,000 to 50,000 rads to reduce a low concentration of polluted water such as drinking water.