公开(公告)号：US20030148586A1

公开(公告)日：2003-08-07

申请号：US10351385

申请日：2003-01-27

Applicant: OSAKA PREFECTURE

Inventor： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC: H01L021/76 ,  H01L021/425

CPC classification number: H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130, of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1nullG2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract translation: 掩埋绝缘层型半导体碳化硅衬底的制造方法包括将具有预定厚度的具有表面硅层130的SOI衬底100和埋入绝缘体120放置在加热炉200中并且增加的步骤 同时将氢气G1和烃气G2的混合气体（G1 + G2）供给到加热炉200中，从而将SOI基板100的变形表面硅层130形成为单一的 晶体碳化硅薄膜140。

公开(公告)号：US20040173154A1

公开(公告)日：2004-09-09

申请号：US10802806

申请日：2004-03-18

Applicant: Osaka Prefecture ,  Hosiden Corporation

Inventor： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC: C23C016/00

CPC classification number: H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1nullG2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract translation: 掩埋绝缘层型半导体碳化硅衬底的制造方法包括将具有预定厚度的表面硅层130和掩埋绝缘体120的SOI衬底100放置在加热炉200中的步骤， 同时向加热炉200供给氢气G1和烃气G2的混合气体（G1 + G2），从而使SOI衬底100的变形表面硅层130成为单晶 碳化硅薄膜140。

公开(公告)号：US20040099871A1

公开(公告)日：2004-05-27

申请号：US10699832

申请日：2003-11-04

Applicant: OSAKA PREFECTURE ,  HOSIDEN CORPORATION

Inventor： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC: H01L027/15

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0254 ,  H01L21/02639

Abstract: There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

Abstract translation: 提供了适用于制造电子器件和光学器件混合安装在同一硅衬底上的电子 - 光学联合器件的单晶氮化镓局部衬底。 单晶氮化镓410生长的区域通过在硅衬底100上形成碳化硅200而在硅衬底100上局部存在，以在上述碳化硅200上局部形成单晶氮化镓410.使用氮化硅220 作为形成上述单晶氮化镓410的掩模。