公开(公告)号：US20020130107A1

公开(公告)日：2002-09-19

申请号：US10076360

申请日：2002-02-19

Applicant: OSAKA PREFECTURE

Inventor： Katsutoshi Izumi ,  Keiji Mine ,  Yoshiaki Ohbayashi ,  Fumihiko Jobe

IPC: H01L021/302 ,  H01L021/461 ,  C23F001/00 ,  B44C001/22 ,  C23F003/00

CPC classification number: H01L21/033 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  Y10S156/914

Abstract: The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber 100A in which a sample 500 formed with a carbon thin film 510 on its surface is to be set, a gas feed means 200A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O2 has been mixed from one end to the interior of the reaction chamber 100A, an exhaust means 300A for discharging carbon dioxide gas CO2 from the downstream side of the inert gas Ar fed from the gas feed means 200A, and a heating means 400A for heating the sample 500 to 550null C. or higher are provided.

Abstract translation: 本发明涉及用于去除在样品表面上形成的碳薄膜的蚀刻，以防止对样品的损伤，并且消除了如等离子体蚀刻所需要的特殊装置（例如真空泵）的必要性。 密封反应室100A，其中要设置表面上形成有碳薄膜510的样品500，用于供给作为惰性气体Ar的氩气的气体供给装置200A，其中预定比例的氧气O2具有 从反应室100A的一端到内部混合有用于从从气体供给装置200A供给的惰性气体Ar的下游侧排出二氧化碳CO 2的排气装置300A，以及用于加热试样的加热装置400A 提供500至550℃或更高。

公开(公告)号：US20030148586A1

公开(公告)日：2003-08-07

申请号：US10351385

申请日：2003-01-27

Applicant: OSAKA PREFECTURE

Inventor： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC: H01L021/76 ,  H01L021/425

CPC classification number: H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130, of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1nullG2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract translation: 掩埋绝缘层型半导体碳化硅衬底的制造方法包括将具有预定厚度的具有表面硅层130的SOI衬底100和埋入绝缘体120放置在加热炉200中并且增加的步骤 同时将氢气G1和烃气G2的混合气体（G1 + G2）供给到加热炉200中，从而将SOI基板100的变形表面硅层130形成为单一的 晶体碳化硅薄膜140。

公开(公告)号：US20020185058A1

公开(公告)日：2002-12-12

申请号：US10159111

申请日：2002-06-03

Applicant: Osaka Prefecture

Inventor： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Fumihiko Jobe

IPC: C30B028/12 ,  C30B023/00 ,  C30B028/14 ,  C30B025/00

CPC classification number: C30B25/02 ,  C30B29/36

Abstract: To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.

Abstract translation: 经济地制造单晶碳化硅薄膜。 用于制造单晶碳化硅薄膜的装置包括适于接收用于成膜的SOI衬底100的成膜室200，用于供应制造单晶碳化硅所需的各种气体G1至G4的气体供给装置300 薄膜形成室200，用于处理氩气作为惰性气体G1的气体处理装置500，作为烃类气体G2的丙烷气体，作为载气的氢气和供给到膜的氧气G4 以及用于控制成膜室200的温度的温度控制装置400。

公开(公告)号：US20040173154A1

公开(公告)日：2004-09-09

申请号：US10802806

申请日：2004-03-18

Applicant: Osaka Prefecture ,  Hosiden Corporation

Inventor： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC: C23C016/00

CPC classification number: H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1nullG2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract translation: 掩埋绝缘层型半导体碳化硅衬底的制造方法包括将具有预定厚度的表面硅层130和掩埋绝缘体120的SOI衬底100放置在加热炉200中的步骤， 同时向加热炉200供给氢气G1和烃气G2的混合气体（G1 + G2），从而使SOI衬底100的变形表面硅层130成为单晶 碳化硅薄膜140。

公开(公告)号：US20040099871A1

公开(公告)日：2004-05-27

申请号：US10699832

申请日：2003-11-04

Applicant: OSAKA PREFECTURE ,  HOSIDEN CORPORATION

Inventor： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC: H01L027/15

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0254 ,  H01L21/02639

Abstract: There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

Abstract translation: 提供了适用于制造电子器件和光学器件混合安装在同一硅衬底上的电子 - 光学联合器件的单晶氮化镓局部衬底。 单晶氮化镓410生长的区域通过在硅衬底100上形成碳化硅200而在硅衬底100上局部存在，以在上述碳化硅200上局部形成单晶氮化镓410.使用氮化硅220 作为形成上述单晶氮化镓410的掩模。