Abstract:
A method and apparatus for programming a phase change memory cell (2) is disclosed. A phase change memory cell (2) includes a memory element (10) of a phase change material having a first state ("11"), in which the phase change material is crystalline and has a minimum resistance level, a second state ("00") in which the phase change material is amorphous and has a maximum resistance level, and a plurality of intermediate states with resistance levels there between. The method includes using programming pulses to program the phase change memory cell (2) in either the set, reset, or one of the intermediate states. To program in the intermediate states, a programming pulse creates a crystalline percolation path having an average diameter (D) through amorphous phase change material and a second programming pulse modifies the diameter (D) of the crystalline percolation path to program the phase change memory cell to the proper current level.
Abstract:
Described herein is a self-supply circuit (30), for a voltage converter (1) that converts an input voltage (V in ) into an output voltage (V out ) and has a main switch (10) and a controller (12), designed to control switching of the main switch (10) for controlling the output voltage (V out ); the self-supply circuit (30) is provided with: a charge accumulator (16), which is connected to the controller (12) and supplies a self-supply voltage (V cc ) to the same controller; a generator (24), which supplies a charge current (I charge ) to the charge accumulator (16); and an auxiliary switch (21), which has a first conduction terminal in common with a respective conduction terminal of the main switch (10) and is operable so as to control transfer of the charge current (I charge ) to the charge accumulator (16). In particular, the self-supply circuit (30) is provided with a precharge stage (31), connected to the auxiliary switch (21), which carries out a precharging of an intrinsic capacitance of the auxiliary switch (21) before a turning-off transient of the main switch (10) ends.
Abstract:
A transmitting apparatus of digital signals on a line (1) is disclosed, wherein there is a supply signal (Vbus) of electronic devices. Said apparatus comprises at least a direct-voltage switching converter (21) and means (3) suitable for varying the switching frequency of said converter (21) on the basis of a preset digital signal (Dig) to be transmitted; the converter is suitable for generating an alternating current signal (Salt) associated with the supply signal (Vbus) during the switching periods. The apparatus comprises further means (10) suitable for receiving said alternating current signal and suitable for processing the latter to obtain the preset digital signal (Dig).,1).
Abstract:
In a microfluidic assembly (20), a microfluidic device (1') is provided with a body (4) in which at least a first inlet (7) for loading a fluid to analyse and a buried area (8) in fluidic communication with the first inlet (7) are defined. An analysis chamber (10') is in fluidic communication with the buried area (8) and an interface cover (23) is coupled in a fluid-tight manner above the microfluidic device (1'). The interface cover (23) is provided with a sealing portion (35) in correspondence to the analysis chamber (10'), adapted to assume a first configuration, at rest, in which it leaves the analysis chamber (10') open, and a second configuration, as a consequence of a stress, in which it closes in a fluid-tight manner the same analysis chamber.
Abstract:
The present invention provides a mold for obtaining, on a substrate, an array of carbon nanotubes with a high control of their positioning wherein such mold comprises a first layer of a first preset material having a surface having in relief at least one first plurality of projections having a free end portion with a substantially pointed profile, a method for obtaining the above-mentioned mold and a method for obtaining the above-mentioned array by using such mold.