Abstract:
휴대용 단말기의 응용 프로그램 등록 방법이 개시된다. 입력부, 디스플레이부, 저장부, 인터페이스부 및 입력부, 디스플레이부, 저장부 및 인터페이스부를 제어하는 제어부를 포함하는 휴대용 단말기의 응용 프로그램 등록 방법에 있어서, 먼저 접속된 외부망을 통해 저장부에 설치하기 위한 응용 프로그램을 선택한다. 그리고, 선택된 응용 프로그램에 내장된 설치 프로그램에 의해 응용 프로그램의 실행파일 저장위치 정보 및 아이콘 정보를 기 설정된 로딩 레지스터에 등록한다. 로딩 레지스터에 등록된 실행 프로그램에 대응되게 설정된 아이콘을 디스플레이부에 표시한 후, 표시된 아이콘을 선택하여 선택된 아이콘에 대응하는 실행 프로그램을 실행한다. 따라서, 휴대용 단말기와 상호호환 가능한 규약에 의해 만들어진 응용 프로그램을 다운로딩한 후, 실행 파일 및 아이콘을 휴대용 단말기의 레지스터에 등록함으로써 새로운 응용 프로그램의 설치 및 실행이 가능하다.
Abstract:
PURPOSE: A system for controlling a sleep mode in a wireless access communication system and a method therefor are provided to enable a base station to know an awakened terminal among terminals which are in sleep mode state, based on group information, thereby reducing an unnecessary paging message transmission while increasing efficiency of a wideband wireless access communication system. CONSTITUTION: A system carries out a grouping process by paging intervals(S305). When a subscriber terminal requests a sleep mode(S310), the system determines a paging interval type of the terminal, and selects a group where the subscriber terminal is to be included(S315), then registers the terminal in the selected group(S320). The system manages group TRF-IND messages while updating the paging intervals of subscriber terminals(S325). If one of the subscriber terminals reaches a maximum paging interval(S330), the system changes a group of the corresponding terminal(S335). If any one of the terminals is not in sleep state(S340), the system confirms whether a new terminal requests a sleep mode(S345). If not, the system completes the procedure.
Abstract:
Disclosed is a method of manufacturing a semiconductor device. First, a silicidation blocking layer is formed on a semiconductor substrate by a plasma enhanced chemical vapor deposition process. Next, the silicidation blocking layer in a region in which a metal silicide contact is to be formed is removed by a wet etching process. Next, after a metal layer is formed on the resultant, the silicon in the region and the metal of the metal layer are reacted to form the metal silicide. Since the silicidation blocking layer consisting of PE-SiON is formed at a low temperature of less than 400 Celsius Degrees, it is possible to prevent diffusion and redistribution of impurities in gate and source/drain regions of a transistor during the deposition of the silicidation blocking layer.
Abstract:
PURPOSE: An improved method for controlling a bit rate and a device thereof are provided to measure the quality of encoded bit streams and skip the bit stream of low quality, thereby preventing the quality deterioration. CONSTITUTION: An initial value calculator(310) sets up an initial value for bit rate control and encoding. A target bit encoding calculator(320) calculates a target encoding bit value based on the set initial value. A bit rate control and encoding unit(330) executes bit rate control and encoding based on the calculated target encoding bit value. A current frame quality measurement and frame skip decision unit(340) measures the quality of the current bit stream, and judges whether the current encoded bit stream is skipped, so the current frame quality measurement and frame skip decision unit generates a current bit stream skip control signal. A control unit(350) controls skipping of the current encoded bit stream.
Abstract:
PURPOSE: A method for forming a tunnel oxide layer of a nonvolatile semiconductor memory device is provided to be capable of increasing coupling ratio by reducing the surface of the tunnel oxide layer. CONSTITUTION: A gate oxide layer(22) is formed on a semiconductor substrate(20). A photoresist pattern is formed on the gate oxide layer(22) for exposing the predetermined portion of the gate oxide layer(22). A sacrificial oxide layer is formed on the resultant structure. An opening portion is formed in the gate oxide layer(22) by carrying out a wet etching process using the photoresist pattern as a mask. A tunnel oxide layer(28) is formed in the bottom portion of the opening portion. Preferably, the sacrificial oxide layer is formed by carrying out a CVD(Chemical Vapor Deposition) process at the temperature of 150-200 °C.
Abstract:
PURPOSE: A method for coding a video in an error resilient mode is provided to reduce the loss of information and have a high error resilient mode, and to provide a recording medium readable by a computer, so that communication less sensitive to an error is performed under an environment generating lots of errors such as a wireless communication channel. CONSTITUTION: In a data partitioning step(20), macro blocks including header data, motion vector data and DCT(Discrete Cosine Transform) data are partitioned to an HDP(Header Data Part) grouping the header data, an MVDP(Motion Vector Data Part) grouping the motion vector data, and a DDP(DCT Data part) grouping the DCT data. In a VLC(Variable Length Coding) step(22), parts of the HDP, MVDP, and DDP are VLCed. In an RVLC(Reverse VLC) step(24), RVLC is performed for parts selected in predetermined priorities. And in a marker inserting step(26), an RM(Resync Marker) for classifying each video data packet, an HM(Header Marker) for classifying the HDP and MVDP, and an MM(Motion Marker) for classifying the MVDP and DDP are inserted.
Abstract:
PURPOSE: A decoding circuit is provided to be capable of performing a program inhibit operation by a more efficient method. CONSTITUTION: Each of memory strings comprises a plurality of memory cells that are connected in series between the first select transistor and the second select transistor. A unit memory cell arrays(MCU0t, MCU0b) includes plural memory strings and a source line(CSL0) connected in common to the memory strings. The first and second select lines(SSL0, GSL0)/(SSL1, GSL1) are connected to gates of the first and second select transistors. The first gating transistor is connected between the first select line(SSL0/1) and the first select voltage source, and the second gating transistor is connected between the first select line and the second select voltage source. Word line gating transistors(WN0-WN15, WN16-WN31) are connected between word lines, connected to gates of memory cells, word line driving signals, respectively. A control circuit(HVCt) controls the first and second gating transistors and the word line gating transistors in response to a signal having address decoding signal. A source line gating transistor is connected between the source line and a source line voltage source. A control circuit(HVCb) controls the source line gating transistor in response to the address decoding information.
Abstract:
PURPOSE: An apparatus and a method for transmitting and receiving multimedia are provided to enhance error resilience by unevenly performing error protection for source packets. CONSTITUTION: The first error protection layer(330) and the second error protection layer(340) are inserted between a source packetizer including a video packetizer(310) and an audio packetizer(320) and an RTP(Real-time Transport Protocol) layer(350). The first error protection layer(330) and the second error protection layer(340) generate an FEC(Forward Error Correction) packet as a result of the performance of an uneven error protection for one or more video or audio packets packetized in the video packetizer(310) and the audio packetizer(320).
Abstract:
PURPOSE: An apparatus for transceiving a wireless packet and a method therefor are provided to enhance error resilience and decrease a packet drop rate when transmitting and receiving multimedia data under wireless environment by adding an error protection code to header information of a MUX-PDU(Protocol Data Unit). CONSTITUTION: A header information generating unit(410) generates a length indicator field for indicating ranges of an information length and a length field for indicating an information length, and divides header information into one or two portions and adds an error protection code to each header information. A MUX-PDU frame forming unit(420) multiplexes header information and data generated in the header information generating unit(410) and generates a MUX-PDU frame.
Abstract:
여기에 개시된 동기형 반도체 메모리 장치는, 어드레스 신호의 천이를 검출한 신호들을 조합한 마스터 신호를 인가받아 제 1 숏 펄스를 발생하는 제 1 숏 펄스 발생 회로, 상기 제 1 숏 펄스를 지연시켜 제 1 제어 신호를 발생하는 제 1 지연 회로, 상기 제 1 제어 신호에 응답하여 제 2 숏 펄스를 발생하는 제 2 숏 펄스 발생 회로, 상기 제 1 숏 펄스를 지연시키기 위한 제 2 지연 회로, 외부로부터 인가된 클럭 신호에 응답하여 상기 제 2 숏 펄스를 쉬프트하기 위한 제 1 쉬프트 레지스터, 감지 구간을 나타내는 레이턴시 정보를 입력받아 상기 제 2 지연 회로와 상기 제 1 쉬프트 레지스터의 출력들 가운데 하나를 제 2 제어 신호로 출력하는 제 1 선택 회로, 상기 제 2 제어 신호를 지연시키기 위한 제 3 지연 회로, 상기 제 3 지연 회로의 출력 신호에 응답하여 제 3 � �� 펄스를 발생하기 위한 제 3 숏 펄스 발생 회로, 상기 제 3 숏 펄스를 지연시키기 위한 제 4 지연 회로, 외부로부터 제공된 카운팅 정보에 응답하여 상기 제 3 숏 펄스를 쉬프트해서 출력하는 제 2 쉬프트 레지스터, 상기 레이턴시 정보에 응답해서 상기 제 4 지연 회로와 제 2 쉬프트 레지스터의 출력들 가운데 하나를 래치 제어 신호로 출력하는 제 2 선택 회로, 그리고 상기 제 1 숏 펄스에 동기되어 활성화되고, 상기 래치 제어 신호에 의해 비활성화되는 제 3 제어 신호를 발생하기 위한 래치 회로를 포함한다.