公开(公告)号：KR1020070094206A

公开(公告)日：2007-09-20

申请号：KR1020060024536

申请日：2006-03-16

Applicant: 한국전자통신연구원

Inventor： 박봉혁 ,  이승식 ,  최상성 ,  박광로 ,  이형진 ,  하동삼

IPC: H03F1/26 ,  H04B1/40

CPC classification number: H03F1/26 ,  H03F1/223 ,  H03F1/42 ,  H03F1/565 ,  H03F3/193 ,  H03F2200/294 ,  H03F2200/372

Abstract: An input matching circuit for an ultra-wideband low noise amplifier is provided to enhance the matching accuracy of the LNA(Low Noise Amplifier) by using a Miller efficiency and a small-sized passive element and to improve the noise performance by using the small-size passive element. An input matching circuit for an ultra-wideband low noise amplifier includes an input stage(10), an amplifier stage(20), an output load stage(40), and a second transistor(30). The input stage receives a wireless frequency signal. The amplifier stage includes a first transistor, whose gate is connected to the input stage. A source of the second transistor is connected to a drain of the first transistor. A first inductor is connected to a source of the first transistor. The output load stage is connected to a drain of the second transistor. The output load stage is connected to a drain of the second transistor. The output load stage is connected to the drain and a gate of the second transistor.

Abstract translation: 提供了一种用于超宽带低噪声放大器的输入匹配电路，以通过使用米勒效率和小尺寸无源元件来提高LNA（低噪声放大器）的匹配精度，并通过使用小尺寸无源元件来提高噪声性能， 大小无源元件。 用于超宽带低噪声放大器的输入匹配电路包括输入级（10），放大级（20），输出负载级（40）和第二晶体管（30）。 输入级接收无线频率信号。 放大器级包括第一晶体管，其栅极连接到输入级。 第二晶体管的源极连接到第一晶体管的漏极。 第一电感器连接到第一晶体管的源极。 输出负载级连接到第二晶体管的漏极。 输出负载级连接到第二晶体管的漏极。 输出负载级连接到第二晶体管的漏极和栅极。

公开(公告)号：KR1020070061211A

公开(公告)日：2007-06-13

申请号：KR1020060065107

申请日：2006-07-11

Applicant: 한국전자통신연구원

Inventor： 이승식 ,  박봉혁 ,  최상성 ,  김창완 ,  듀황 ,  이상국

IPC: H03F1/30

CPC classification number: H03G3/004 ,  H03G1/0023 ,  H03G1/0029

Abstract: A CMOS(Complementary Metal Oxide Semiconductor) variable gain amplifying apparatus is provided to reduce power consumption and obtain more gain by employing a current separating unit. A CMOS variable gain amplifying apparatus includes a voltage converting device(110), a voltage-current converting device(120), an inputting device(130), a common mode feedback device(140), and a load device(150). The voltage converting device changes a control voltage to a positive voltage and a negative voltage. The voltage-current converting device changes the control voltage converted at the voltage converting device to current. The inputting device amplifies/reduces an input signal into a fixed gain value. The common mode feedback device stably fixes an output bias voltage. The load device increases the range of a use frequency.

Abstract translation: 提供CMOS（互补金属氧化物半导体）可变增益放大装置，以通过使用电流分离单元来降低功耗并获得更多的增益。 CMOS可变增益放大装置包括电压转换装置（110），电压 - 电流转换装置（120），输入装置（130），共模反馈装置（140）和负载装置（150）。 电压转换装置将控制电压改变为正电压和负电压。 电压 - 电流转换装置将在电压转换装置转换的控制电压改变为电流。 输入装置将输入信号放大/减小为固定增益值。 共模反馈装置稳定地固定输出偏置电压。 负载装置增加使用频率的范围。

公开(公告)号：KR1020070061012A

公开(公告)日：2007-06-13

申请号：KR1020060030405

申请日：2006-04-04

Applicant: 한국전자통신연구원

Inventor： 이승식 ,  박봉혁 ,  최상성 ,  김창완 ,  심윤아 ,  이상국

IPC: H03F1/42 ,  H03F1/26

CPC classification number: H03F1/26 ,  H03F1/223 ,  H03F1/42 ,  H03F1/565 ,  H03F3/193 ,  H03F2200/372

Abstract: An ultra-wideband lower noise amplifying apparatus is provided to improve the high frequency noise characteristic of a lower noise amplifying apparatus with a frequency band of more than 7 GHz. An ultra-wide band lower noise amplifying apparatus includes a common gate amplifying stage(310), and a cascode amplifying stage(330). The common gate amplifying stage passes an ultra wide-band signal inputted from the outside at an input stage without reflection, amplifies the low and high frequency band signals among the inputted ultra-wideband signals, and represents a low noise characteristic over an ultra-wideband. The cascode amplifying stage amplifies the intermediate frequency band signal among the ultra-wideband signals inputted from the common gate amplifying stage.

Abstract translation: 提供了一种超宽带低噪声放大装置，用于改善具有大于7GHz频带的较低噪声放大装置的高频噪声特性。 超宽带低噪声放大装置包括公共栅极放大级（310）和共源共栅放大级（330）。 公共门放大级通过在输入级从外部输入的超宽带信号而不反射，放大输入的超宽带信号中的低频和高频信号，并且表示超宽带上的低噪声特性 。 共源共栅放大级放大从公共栅极放大级输入的超宽带信号中的中频带信号。

公开(公告)号：KR100728258B1

公开(公告)日：2007-06-13

申请号：KR1020050121160

申请日：2005-12-09

Applicant: 한국전자통신연구원

Inventor： 박봉혁 ,  이승식 ,  최상성 ,  박광로

IPC: H04B1/26 ,  H04B1/16 ,  H04B1/40

Abstract: An active mixer for a UWB(Ultra Wide Band) using multi bands is provided to make it possible to reduce local signals though a single balanced mixer structure is adopted, and to convert a single mode signal into a differential mode signal by being positioned at an end next to a low noise amplifier in a direct conversion type wireless frequency receiver. An active mixer for a UWB using multi bands comprises a transconductance NMOS(11), a switching unit(20), NMOS transistors(12,13), resistors(17,18), a band pass filter(14), and a PMOS transistor(19). A wireless frequency input signal of a single mode is inputted to a gate of the transconductance NMOS(11) and a negative signal is outputted via a drain of the transconductance NMOS(11). The negative signal is inputted to the NMOS transistors(12,13) of the switching unit(20) and is mixed with signals inputted via LO+ and LO-. Then the mixed signals are outputted via drains of the NMOS transistors(12,13). Current components outputted via the drains of the NMOS transistors(12,13) are converted into voltage components by being combined with the resistors(17,18) installed for acquiring a wide band property. The band pass filter(14) is installed at an IF(Intermediate Frequency) end in order to reduce local signals largely generated at the IF end which is a structural shortage of a single balanced mixer. The band pass filter(14) is composed of a general L-C circuit. The PMOS transistor(19) with a current bleeding property is additionally installed in order to enlarge an overall voltage gain by enlarging value sizes of the resistors(17,18) via reducement of an amount of a current passing through the resistors(17,18). A source of the PMOS transistor(19) is connected to a reference voltage(VDD) connected to the resistors(17,18) and a drain of the PMOS transistor(19) is connected to sources of the NMOS transistors(12,13).

Abstract translation: 提供了使用多频带的UWB（超宽带）的有源混频器，以使得可以通过采用单个平衡混频器结构来减少本地信号，并且通过将单模信号定位在 结束于直接转换型无线频率接收器中的低噪声放大器。 用于使用多频带的UWB的有源混频器包括跨导NMOS（11），开关单元（20），NMOS晶体管（12,13），电阻器（17,18），带通滤波器（14）和PMOS 晶体管（19）。 单模式的无线频率输入信号被输入到跨导NMOS（11）的栅极，而负信号通过跨导NMOS（11）的漏极被输出。 负信号被输入到开关单元（20）的NMOS晶体管（12,13），并与经由LO +和LO-输入的信号混合。 然后混合信号通过NMOS晶体管（12,13）的漏极输出。 经由NMOS晶体管（12,13）的漏极输出的电流分量通过与为了获得宽带特性而安装的电阻器（17,18）组合来转换为电压分量。 带通滤波器（14）安装在IF（中频）端，以便减少在IF端大量产生的局部信号，这是单个平衡混频器的结构短缺。 带通滤波器（14）由一般的L-C电路组成。 具有电流泄放特性的PMOS晶体管（19）被附加地安装，以便通过减小通过电阻器（17,18）的电流量来扩大电阻器（17,18）的值尺寸来扩大总体电压增益 ）。 PMOS晶体管（19）的源极连接到连接到电阻器（17,18）的参考电压（VDD），并且PMOS晶体管（19）的漏极连接到NMOS晶体管（12,13）的源极。 。

公开(公告)号：KR1020070058300A

公开(公告)日：2007-06-08

申请号：KR1020060065940

申请日：2006-07-13

Applicant: 한국전자통신연구원

Inventor： 박봉혁 ,  이승식 ,  최상성 ,  박광로 ,  라제시티루그나남 ,  하동삼

IPC: H03H11/00

CPC classification number: H03H7/01 ,  H03F3/45192 ,  H03H7/075 ,  H03H11/00

Abstract: An ultra-wideband active differential signal low pass filter is provided to reduce a digital interface and to improve linearity by realizing a fully differential mode. An ultra-wideband active differential signal low pass filter includes two integrator loops(15), an input folded cascode stage(12), an amplifier stage(14), and an output buffer(16). The two integrator loops(15) have a negative resistance load. The input folded cascode stage(12) isolates the two integrator loops(15) from a source resistor. The amplifier stage(14) is arranged between the input folded cascode stage(12) and the two integrator loops(15) to control a pass band gain. The output buffer(16) is connected to output stages of the two integrator loops(15).

Abstract translation: 提供超宽带有源差分信号低通滤波器以减少数字接口并通过实现全差分模式来提高线性度。 超宽带有源差分信号低通滤波器包括两个积分器回路（15），输入折叠共源共栅级（12），放大级（14）和输出缓冲器（16）。 两个积分器回路（15）具有负的电阻负载。 输入折叠共源共栅级（12）将两个积分器回路（15）与源极电阻隔离。 放大器级（14）被布置在输入折叠共源共栅级（12）和两个积分器回路（15）之间，以控制通带增益。 输出缓冲器（16）连接到两个积分器回路（15）的输出级。

公开(公告)号：KR1020060057918A

公开(公告)日：2006-05-29

申请号：KR1020040097112

申请日：2004-11-24

Applicant: 한국전자통신연구원

Inventor： 박봉혁 ,  박종권 ,  이승식 ,  김재영 ,  최상성 ,  박광로

IPC: H01Q1/38 ,  H01Q13/08

Abstract: 본 발명은 반원 확장을 이용한 UWB(Ultra-WideBand) 슬롯 안테나에 관한 것으로서, 이득 변화량(gain variation)을 결정하는 반원 확장, 전류의 흐름을 원활하게 하는 사다리꼴 모양의 패치, 광대역을 위한 사각 슬롯, 광대역 임피던스 정합을 위한 스터브(stub)로 구성되어, 초소형이여 이동성이 용이하며, UWB 시스템이 요구하는 주파수 대역폭(3.1∼10.6㎓)를 만족하고 있다. 또한, 모든 방향으로 방사되는 전방향성 패턴(omni-directional pattern)을 가지며, 이로 인해 원거리장(far-field)의 위상이 선형인 평탄한 2dBi 이하의 이득 변화량을 갖는다. 그리고, 안테나의 제작비용이 저렴하다는 장점이 있다.
UWB 안테나(ultra-wideband antenna), 반원 확장(semi-circular extension), 슬롯 안테나(slot antenna), CPW(coplanar waveguide), 스터브(stub), 광대역 정합

公开(公告)号：KR1020030079279A

公开(公告)日：2003-10-10

申请号：KR1020020018220

申请日：2002-04-03

Applicant: 한국전자통신연구원

Inventor： 박봉혁 ,  정해원 ,  이형호

IPC: H04L27/32

Abstract: PURPOSE: A double modulation and demodulation high frequency wave transmitting and receiving device for commonly implementing RF is provided to allow a plurality of signals of different modulation and demodulation methods to be transmitted by the same RF. CONSTITUTION: A double modulation and demodulation high frequency wave transmitting and receiving device(100) for commonly implementing RF includes Gaussian frequency shift keying and quadrature phase shift keying base band signal control block(10), a radio frequency down stream conversion block(20), an RF local signal generation block(30), an RF upstream conversion block, a panel selection filter block(50), an intermediate filter down stream conversion block(60), an intermediate frequency local signal generation block(70), an intermediate frequency upstream conversion block(80), a bandpass filter(11), a switch(12), a plurality of switch drivers(13,14,15,16,17), a reception signal intensity detector(18) and a peak detector(19). In the double modulation and demodulation high frequency wave transmitting and receiving device(100), the digital signal inputted from the base band is converted into analog signal at the digital to analog converters. The high frequency components of in-phase and quadrature-phase signals outputted from the digital to analog converters are removed at the low pass filters and inputted to the I/Q modulators.

Abstract translation: 目的：提供用于通常实现RF的双调制和解调高频波发射和接收设备，以允许不同调制和解调方法的多个信号由相同的RF发射。 一种用于通常实现RF的双调制和解调高频波发射和接收装置（100）包括高斯频移键控和正交相移键控基带信号控制块（10），射频下行流转换块（20） ，RF本地信号生成块（30），RF上游转换块，面板选择滤波器块（50），中间滤波器下行转换块（60），中频本地信号生成块（70），中间 频率上游转换块（80），带通滤波器（11），开关（12），多个开关驱动器（13,14,15,16,17），接收信号强度检测器（18）和峰值检测器 （19）。 在双调制和解调高频波发射和接收装置（100）中，从基带输入的数字信号在数模转换器转换为模拟信号。 在低通滤波器处，从数模转换器输出的同相和正交相位信号的高频分量被去除并输入到I / Q调制器。