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公开(公告)号：JPS63216233A
公开(公告)日：1988-09-08
申请号：JP4781687
申请日：1987-03-04
Applicant: CANON KK
Inventor： SHIMODA ISAMU , SUZUKI AKIRA , KANEKO TETSUYA , TSUKAMOTO TAKEO , TAKEDA TOSHIHIKO , YONEHARA TAKAO , ICHIKAWA TAKESHI , OKUNUKI MASAHIKO
Abstract: PURPOSE:To make emission of electrons possible for which wiring connection is not required and mounting degree is high by supplying after electron emitting action, electric charge of an electron emitting electrode lost by emission of electrons at the time of the emitting action. CONSTITUTION:At the time of action of electron emission, positive charge is accumulated on an electron emitting electrode 4, and intensity of magnetic field is weakened, so emission quantity of electrons is reduced, and finally emission of electrons stops. Then, by using a switching means 10, a voltage of the opposite direction is applied between a pulling electrode 7 and a voltage applying electrode 1, while potential of a voltage applied to a matter subject to irradiation 5 is set at 0V by means of a switching means 11, so electrons are emitted from the pulling electrode 7 to the side of the electron emitting electrode 4. Emitted electrodes are connected with positive electric charge accumulated on the electron emitting electrode 4 to reduce and eliminate the accumulated positive electric charge, where the electron emitting electrode 4 is ready for emission of electrons. Thus it is possible to let an electron emitting electrode provided solely on the surface of insulation perform emission of electrons. Electron emission is to be performed by two or more electron emitting electrodes.
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公开(公告)号：JPS63187670A
公开(公告)日：1988-08-03
申请号：JP1819187
申请日：1987-01-30
Applicant: CANON KK
Inventor： SUZUKI AKIRA , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To realize a compact optical switching electron emitting element by integrally laminating and constituting a junction type optoelectric transducer performing optoelectric-converting incident beams, and an electron emitting element emitting electrons in response to output currents from the transducer. CONSTITUTION:A P-I-N photodiode is organized of a p layer 1, an i layer 2 and an n layer 3, while an electron emitting element is laminated integrally onto the P-I-N photodiode. The electron emitting element is organized of a conductive layer 4, an insulating layer 5 and a metallic layer 6. When reverse bias voltage VR is applied between the p layer 1 and the n layer 3 and voltage V is applied between the conductive layer 4 and the metallic layer 6 in an optical switching electron emitting element constructed in this manner, carrier electrons generated by optical absorption are injected to the conductive layer 4, and the injected electrons are accelerated in speed, and emitted from the metallic layer 6.
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公开(公告)号：JPS63150836A
公开(公告)日：1988-06-23
申请号：JP29768186
申请日：1986-12-16
Applicant: CANON KK
Inventor： SUZUKI AKIRA , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To improve positioning accuracy and control emitted electrons by providing a control electrode on an electron emitting source via an insulating layer. CONSTITUTION:An electrode 2 is formed on a substrate 1, a P-type semiconductor layer 3 and an N-type semiconductor layer 4 are laminated on it to form an electron emitting element. A work function reduced material region 8 is provided on the electron emitting section 7 of this layer 4. An insulating layer 5 having an electron emitting port 9 is formed on the layer 4, and a control electrode 6 is formed on the side and upper section of the emitting port 9 of the layer 5. This electrode 6 is provided on the layer 4 via the layer 5, the positioning accuracy is determined by the error when the emitting section 7 and the emitting port 9 are manufactured, thus positional accuracy can be improved. The voltage applied to the electrode 6 thus provided is controlled, thereby the ON-OFF of the electrons emitted from the emitting section 7 is controlled.
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公开(公告)号：JPS6380437A
公开(公告)日：1988-04-11
申请号：JP14683786
申请日：1986-06-25
Applicant: CANON KK
Inventor： SUGATA MASAO , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To enable an insulating material layer and metallic layers to be accurately formed into desirable shapes and sizes so that uniform characteristics can be obtained, by burying e metallic layer into a recessed part of a substrate and forming an insulating material layer on a uniform surface formed from the upper surface of the metallic layer and that of the substrate. CONSTITUTION:A groove 3 is formed in prescribed width and depth on the upper surface of an insulating substrate 2 and a metallic layer 4 is disposed to be buried into two grooves 3. Therefore the upper surface of the metallic layer 4 and that of the substrate 2 become the flat planes formed essentially identical in height. A voltage application means 10 is connected between the metallic layers 4 and 8 so that the metallic layer 8 is biased positive. An insulating material layer 6 is formed on the upper surface of the metallic layer 4. A driving state of this element can be obtained by closing a switch in the means 10. The applied voltage is properly set in accordance with concrete composition in MIM structure and desirable characteristics in electron emission. Thus, electrons are emitted from the surface of the metallic layer 8.
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公开(公告)号：JPS6348100A
公开(公告)日：1988-02-29
申请号：JP19185486
申请日：1986-08-15
Applicant: CANON KK
Inventor： NAKAMURA KENJI , KAN FUMITAKA , HAYAKAWA NAOJI , TAKENOUCHI MASANORI , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To generate a desired ultrasonic wave at the inside of a substrate or on its surface by generating intensity-modulated electron beams in the respective electron beam sources of an electron generating means by separately controlling them, and radiating the beams on the substrate. CONSTITUTION:The titled method is formed with an electron beam generating means EBH in which the plural electron beam source EBS separately controllable are arrayed two-dimensionally, and the substrate SUB, and the intensity- modulated electron beams are generated and controlled by the electron beam sources of the electron beam generating means. The substrate is radiated with thus thus generated electron beams, and generates a ultrasonic wave. To the electron beam sources EBSs, common electrodes X1, X2,... Y1, Y2,... in matrix form in vertical and horizontal directions are connected. The other ends of the electrodes X1, X2,... are connected to a control circuit CONT 1 and those of the electrodes Y1, Y2,... are connected to a control circuit CONT 2. For instance, if the control circuit CONT 1 selects the electrode X3 and the control circuit CONT 2 selects the electrode Y4, the electron beam source EBS 34 in a third column and in a fourth row is selected to be driven.
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Patent Agency Ranking
公开(公告)号：JPS6348011A
公开(公告)日：1988-02-29
申请号：JP19185286
申请日：1986-08-15
Applicant: CANON KK
Inventor： NAKAMURA KENJI , KAN FUMITAKA , TAKENOUCHI MASANORI , HAYAKAWA NAOJI , SHIMODA ISAMU , OKUNUKI MASAHIKO
IPC: H01L27/14 , G11C11/34 , G11C11/401 , H01J31/00 , H01L27/10 , H03K19/018 , H03K19/08 , H03K19/14
Abstract: PURPOSE:To attain logical operation in parallel at a high speed by selecting and executing OR and AND operations in a memory unit utilizing an electron ray. CONSTITUTION:Memory units MU1, MU2 each provided with plural units U each comprising an electron ray detection means D, a drive means T and an electron ray source E are provided oppositely, a shift register SR1 is provided at the upper part of the memory unit MU1 and a shift register SR2 is arranged at the lower part and a power supply VA is provided between the memory units MU1 and MU2. Moreover, a deflection electrode SE1 as an electromagnetic field generating means is arranged above the memory units MU1, MU2 and a deflection electrode SE2 is arranged under them. Thus, the electron ray radiated in two-dimensionally in response to information is deflected by the electromagnetic field generating means and made incident sequentially in the electron ray detection means, and OR/AND is selected at once from plural sets of information included in the 2-dimensional parallel information is selected and operated by utilizing the threshold value of the electron ray detection means.
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公开(公告)号：JPS6347739A
公开(公告)日：1988-02-29
申请号：JP19186186
申请日：1986-08-15
Applicant: CANON KK
Inventor： NAKAMURA KENJI , KAN FUMITAKA , HAYAKAWA NAOJI , TAKENOUCHI MASANORI , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To deflect light beams transmitted in a medium within a wide angle range by generating plural electron beams whose intensity is modulated from an electron beam generator while individually controlling them and radiating the electron beams to a medium having an acoustic-optical effect to generate a required ultrasonic wave. CONSTITUTION:In case of deflecting incident light Li by ultrasonic waves APW with high frequency, the wavelength of the ultrasonic waves APW is reduced, so that the incident angle of the incident light Li should be set up to a large value to satisfy Bragg's condition. Namely, the ultrasonic waves APW are generated so as to be transmitted with an inclination to the incident side of the incident light Li from the normal on the surface of a substrate SUB and an angle formed by the wave surface of the ultrasonic waves APW and the incident light Li is set up so as to satisfy Bragg's condition. In case of deflecting light beams by ultrasonic waves with low frequency, the wavelength of the ultrasonic waves APW is increased, so that the incident angle of the incident light Li is reduced to satisfy the Bragg's condition, the ultrasonic waves APW are generated so as to be transmitted with an inclination to the opposite side against the incident side of the incident light Li and an angle formed by the wave surface of the ultrasonic waves APW and the incident light Li is set up so as to satisfy Bragg's condition.
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公开(公告)号：JPS6313247A
公开(公告)日：1988-01-20
申请号：JP15626486
申请日：1986-07-04
Applicant: CANON KK
Inventor： SHIMIZU AKIRA , TSUKAMOTO TAKEO , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To obtain high-precision fine formation, by forming one or two or more layers of acceleration/lens electrodes with insulating layers being interposed and then unifying them with a surface conduction-type electron-emission source. CONSTITUTION:An electrode-material layer 17 made of Au, Al, or the like, an insulating layer 18 made of Al2O3 or the like, and an electrode-material layer 19 are piled in order on an insulating substrate 1. Successively this piling structure is partially removed by means of FIB, RIB, or the like, to form an electron-emission hole 8. A thin film 20 made of metal, metal oxide, or the like is then evaporated on the electron emission hole 8 of the substrate 1 by making acceleration/lens electrodes 6 and 7 serve as masks. Successively, a forming process, wherein the thin films 20 on the electrodes 6 and 7 are removed and then application of voltage across electrodes 2 and 3 conducts electricity in the thin film 20 to cause film breakage, is performed to form a rough high- resistance thin film 4.
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公开(公告)号：JPS636717A
公开(公告)日：1988-01-12
申请号：JP14804886
申请日：1986-06-26
Applicant: CANON KK
Inventor： SUGATA MASAO , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SHIMODA ISAMU , OKUNUKI MASAHIKO
IPC: H01J37/073 , H01J1/30 , H01J1/312 , H01J37/06
Abstract: PURPOSE:To obtain an exact positional relation to a material to be processed, by using a transparent insulating substrate divided into two regions and mounting electron-emitting elements in a region and alignment marks in the other region in an electron emitting device where electron emission is induced by application of a voltage. CONSTITUTION:A surface of a transparent insulating substrate 2 made of a material such as glass is divided into two regions, and one region is used as a region 2a for electron-emittingelement formation and the other region is used as a region 2b for alignment-mark formation. The first metallic layer 4 made of the plural number Al stripes or the like arranged at regular intervals is mounted in the region 2a, and the whole surface containing them is covered with an insulating layer 6 made of SiO2 or the like, and then the end part of the layer 4 is equipped with terminals 10 for application of the driving voltage. The second metallic layer 8 consisting of the plural number of stipes made of the same material is then formed perpendicularly to the layers 4 on the layer 6, and it is also connected with terminals 12. A plurality of alignment marks 14 are disposed directly on the substrate 2 in the region 2b. Hence, high- precision electron irradiation can be performed.
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公开(公告)号：JPS62271422A
公开(公告)日：1987-11-25
申请号：JP11351686
申请日：1986-05-20
Applicant: CANON KK
Inventor： SHIMODA ISAMU , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO , OKUNUKI MASAHIKO
IPC: H01L21/30 , H01J1/30 , H01J1/308 , H01J37/073 , H01L21/027 , H01L29/74
Abstract: PURPOSE:To obtain a stable quantity of electron emission, by driving an electron emitting element using electric charge stored in a charge accumulating means, and making it emit electrons. CONSTITUTION:A condenser 2 is charged by closing a switch. Then the voltage between both terminals of an electron emitting element 1 also rises, but a non- conduction state is kept till a trigger signal inputs. After that the switch is opened, and the trigger signal is applied to a gate electrode G from a trigger generating circuit 3. Then the electron emitting element 1 turns on a conduction state in a manner similar to a thyristor, and electric charge of quantity Q1 stored in the condenser 2 flows through the electron emitting element 1. Thereby the electron emitting element 1 is driven and emits electrons. Therefor, stable electron emission is realized only by setting the quantity of charge stored in the condenser 2 at a constant value.
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