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    1.
    发明专利
    未知

    公开(公告)号：DE68929187T2

    公开(公告)日：2000-09-28

    申请号：DE68929187

    申请日：1989-08-31

    Applicant: CANON KK

    Inventor： KUROSAWA HIROSHI ,  AMEMIYA MITSUAKI ,  TERASHIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI ,  OZAWA KUNITAKA ,  HARA SHINICHI ,  KAWAKAMI EIGO ,  MIZUSAWA NOBUTOSHI ,  MORI MAKIKO ,  EBINUMA RYUICHI

    IPC: G03F7/20

    Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

    2.
    发明专利
    未知

    公开(公告)号：DE68927430T2

    公开(公告)日：1997-03-13

    申请号：DE68927430

    申请日：1989-08-31

    Applicant: CANON KK

    Inventor： KUROSAWA HIROSHI ,  AMEMIYA MITSUAKI ,  TERASHIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI ,  OZAWA KUNITAKA ,  MORI MAKIKO ,  EBINUMA RYUICHI ,  HARA SHINICHI ,  MIZUSAWA NOBUTOSHI ,  KAWAKAMI EIGO

    IPC: G03F7/20

    Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.

    3.
    发明专利
    未知

    公开(公告)号：DE69123610D1

    公开(公告)日：1997-01-30

    申请号：DE69123610

    申请日：1991-01-31

    Applicant: CANON KK

    Inventor： SHIMODA ISAMU ,  KARIYA TAKAO ,  MIZUSAWA NOBUTOSHI ,  OZAWA KUNITAKA ,  UZAWA SHUNICHI

    IPC: G03F7/20

    Abstract: A method of manufacture of semiconductor devices, includes exposing different portions of a semiconductor substrate (2) with a first exposure apparatus (100) having a first exposure range; placing and aligning the semiconductor substrate with respect to a second exposure range of a second exposure apparatus (200) which range is larger than the first exposure range of the first exposure apparatus; detecting an alignment error of each of the portions of the semiconductor substrate as covered by the second exposure range of the second exposure apparatus; calculating an overall alignment error of those portions of the semiconductor substrate with respect to the whole second exposure range of the second exposure apparatus, on the basis of the detected alignment errors; and controlling the exposure operation of the second exposure apparatus on the basis of the calculated overall alignment error.

    4.
    发明专利
    未知

    公开(公告)号：DE68927364D1

    公开(公告)日：1996-11-28

    申请号：DE68927364

    申请日：1989-08-31

    Applicant: CANON KK

    Inventor： SAKAMOTO EIJI ,  HARA SHINICHI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI

    IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01L21/683 ,  H01L21/00

    Abstract: A wafer chuck (2) usable with a semiconductor exposure apparatus (Fig.2A) wherein a mask and a semiconductor wafer (1) are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer (1) is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer (1). The wafer (1) is first attracted on the wafer supporting surface of the chuck (2) by vacuum attraction (21), and thereafter, the wafer (1) is attracted by electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying (24) a gas. Preferably Helium or other thermally conductive gas is admitted at this point. When the pattern of the mask is transferred onto the wafer (1), the wafer (1) is retained on the wafer supporting surface (20) by the electrostatic attraction force only. By this, the wafer supporting apparatus can correctly contact the wafer supporting surface (20) to the wafer (1) without being influenced by the undulation of the wafer (1). In addition, the heat produced in the wafer (1) during exposure can be removed efficiently by temperature controlled (23) water (11) supplied to the wafer supporting apparatus (2).

    6.
    发明专利
    未知

    公开(公告)号：DE68925604D1

    公开(公告)日：1996-03-21

    申请号：DE68925604

    申请日：1989-09-04

    Applicant: CANON KK

    Inventor： UDA KOJI ,  TANAKA YUTAKA ,  MORI TETSUZO ,  SHIMODA ISAMU ,  UZAWA SCHUNICHI

    IPC: H05H13/04 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

    Abstract: Synchrotron orbital radiation (SOR) exposure system includes a SOR ring (8) and a plurality (15a-15c) of exposure apparatus each being coupled to the SOR ring and being arranged to expose a wafer to a mask pattern with X-rays contained in synchrotron radiation from the SOR ring (8) to thereby print the mask pattern on the wafer. Specific arrangement is provided to allow communication of a control of the SOR ring and respective controls of the exposure apparatuses. If any abnormality such as vacuum leakage occurs in one exposure apparatus, the information is transmitted to all the controls to start, in all the exposure apparatuses, appropriate operations to protect the exposure apparatuses against the abnormality. This makes it possible to prevent stoppage of the SOR exposure system as a whole even when any abnormality occurs in one exposure apparatus.

    8.
    发明专利
    未知

    公开(公告)号：DE68921687T2

    公开(公告)日：1995-08-03

    申请号：DE68921687

    申请日：1989-08-31

    Applicant: CANON KK

    Inventor： MORI TETSUZO ,  SAKAMOTO EIJI ,  HARA SHINICHI ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHINICHI

    IPC: G03F7/20

    Abstract: The mask(3) and the wafer (4) are closely disposed, and predetermined exposure energy is applied to the respective shot areas of the wafer(4) through the mask (3). The exposure energy is soft-X-ray source, for example. The pattern of the mask (3) is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus (fig 1), a temperature control medium liquid is supplied into the wafer chuck (5) for supporting the wafer (4) at the exposure position. The flow rate is different during the exposure operation than during the non-exposure-operation. The flow control (10) is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also to the heat generation in the wafer(4) by the exposure energy, so that the vibration of the wafer chuck (5) during the exposure operation is suppressed, and simultaneously, the temperature rise of the wafer (4) can be also suppressed. The pattern transfer from the mask (3) to the wafer (4) can be precisely performed.

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