公开(公告)号：US20220407199A1

公开(公告)日：2022-12-22

申请号：US17354903

申请日：2021-06-22

Applicant: Intel Corporation

Inventor： Aleksandar ALEKSOV ,  Neelam PRABHU GAUNKAR ,  Veronica STRONG ,  Georgios C. DOGIAMIS ,  Telesphor KAMGAING

IPC: H01P1/20 ,  H05K1/02 ,  H01L21/48 ,  H01L23/498

Abstract: Embodiments disclosed herein include package substrates with filter architectures. In an embodiment, a package substrate comprises a core with a first surface and a second surface, and a filter embedded in the core. In an embodiment, the filter comprises a ground plane, where the ground plane is substantially orthogonal to the first surface of the core, and a resonator adjacent to the ground plane.

公开(公告)号：US20220406991A1

公开(公告)日：2022-12-22

申请号：US17349653

申请日：2021-06-16

Applicant: Intel Corporation

Inventor： Neelam PRABHU GAUNKAR ,  Telesphor KAMGAING ,  Veronica STRONG ,  Georgios C. DOGIAMIS ,  Aleksandar ALEKSOV

IPC: H01L43/02 ,  H01L23/13 ,  H01L23/15 ,  H01L23/473 ,  H01L23/498 ,  H01L23/66 ,  H01L27/22

Abstract: Embodiments disclosed herein comprise package substrates and methods of forming such package substrates. In an embodiment, a package substrate comprises a core, where the core comprises glass. In an embodiment, an opening if formed through the core. In an embodiment, a magnetic region is disposed in the opening.

公开(公告)号：US20220384330A1

公开(公告)日：2022-12-01

申请号：US17334178

申请日：2021-05-28

Applicant: Intel Corporation

Inventor： Telesphor KAMGAING

IPC: H01L23/498 ,  H01L23/00

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to a vertical high-speed bridge placed within a BGA field of a microelectronic package. In embodiments, the bridge is used for high-speed signaling and may include plated through hole vias that are at a smaller pitch than the pitch of the BGA field. In embodiments, the vertical high-speed bridge may be constructed from a glass wafer or a glass panel using a laser-assisted etching of glass interconnects process. Other embodiments may be described and/or claimed.

公开(公告)号：US20210265732A1

公开(公告)日：2021-08-26

申请号：US17317332

申请日：2021-05-11

Applicant: Intel Corporation

Inventor： Feras EID ,  Sasha N. OSTER ,  Telesphor KAMGAING ,  Georgios C. DOGIAMIS ,  Aleksandar ALEKSOV

IPC: H01Q9/04 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495 ,  H01L23/552 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H01Q1/52 ,  H01Q19/22

Abstract: Embodiments of the invention include a microelectronic device that includes a first substrate having radio frequency (RF) components and a second substrate that is coupled to the first substrate. The second substrate includes a first conductive layer of an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher. A mold material is disposed on the first and second substrates. The mold material includes a first region that is positioned between the first conductive layer and a second conductive layer of the antenna unit with the mold material being a dielectric material to capacitively couple the first and second conductive layers of the antenna unit.

公开(公告)号：US20200227366A1

公开(公告)日：2020-07-16

申请号：US16827296

申请日：2020-03-23

Applicant: Intel Corporation

Inventor： Georgios C. DOGIAMIS ,  Telesphor KAMGAING ,  Javier A. FALCON ,  Yoshihiro TOMITA ,  Vijay K. NAIR

IPC: H01L23/66 ,  H01L23/00 ,  H01L25/18

Abstract: Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.

公开(公告)号：US20200219861A1

公开(公告)日：2020-07-09

申请号：US16647451

申请日：2017-12-28

Applicant: Intel Corporation

Inventor： Telesphor KAMGAING ,  Vijay K. NAIR ,  Feras EID ,  Georgios C. DOGIAMIS ,  Johanna M. SWAN ,  Stephan LEUSCHNER

IPC: H01L25/16 ,  H01L23/498 ,  H01L23/24 ,  H03H9/17 ,  H03H9/05

Abstract: RF front end systems or modules with an acoustic wave resonator (AWR) on an interposer substrate are described. In an example, an integrated system includes an active die, the active die comprising a semiconductor substrate having a plurality of active circuits therein. An interposer is also included, the interposer comprising an acoustic wave resonator (AWR). A seal frame couples the active die to the interposer, the seal frame surrounding the acoustic wave resonator and hermetically sealing the acoustic wave resonator between the active die and the interposer.

公开(公告)号：US20190393172A1

公开(公告)日：2019-12-26

申请号：US16481392

申请日：2017-03-30

Applicant: Intel Corporation

Inventor： Srinivas V. PIETAMBARAM ,  Rahul N. MANEPALLI ,  Kristof Kuwawi DARMAWIKARTA ,  Robert Alan MAY ,  Aleksandar ALEKSOV ,  Telesphor KAMGAING

IPC: H01L23/66 ,  H01L21/56 ,  H01L23/00

Abstract: Semiconductor packages having a die electrically connected to an antenna by a coaxial interconnect are described. In an example, a semiconductor package includes a molded layer between a first antenna patch and a second antenna patch of the antenna. The first patch may be electrically connected to the coaxial interconnect, and the second patch may be mounted on the molded layer. The molded layer may be formed from a molding compound, and may have a stiffness to resist warpage during fabrication and use of the semiconductor package.

公开(公告)号：US20190326213A1

公开(公告)日：2019-10-24

申请号：US16464972

申请日：2016-12-30

Applicant: INTEL CORPORATION

Inventor： Telesphor KAMGAING ,  Georgios C. DOGIAMIS ,  Sasha N. OSTER

IPC: H01L23/522 ,  H01G4/33 ,  H01G4/38 ,  H01L23/488 ,  H01L23/50 ,  H01L23/64 ,  H05K1/16 ,  H01L49/02 ,  H01L23/00

Abstract: Embodiments of the invention include a microelectronic device that includes a substrate having transistor layers and interconnect layers including conductive layers to form connections to transistor layers. A capacitive bump is disposed on the interconnect layers. The capacitive bump includes a first electrode, a dielectric layer, and a second electrode. In another example, an inductive bump is disposed on the interconnect layers. The inductive bump includes a conductor and a magnetic layer that surrounds the conductor.

公开(公告)号：US20190319328A1

公开(公告)日：2019-10-17

申请号：US16464673

申请日：2016-12-30

Applicant: Intel Corporation

Inventor： Georgios DOGIAMIS ,  Sash OSTER ,  Telesphor KAMGAING

IPC: H01P3/16 ,  H05K1/02 ,  H05K1/18 ,  H03F3/19 ,  H03H11/04 ,  H01P3/08

Abstract: Embodiments of the invention may include a mm-wave waveguide. In an embodiment, the mm-wave waveguide may include a first dielectric waveguide and a second dielectric waveguide. A conductive layer may be used to cover the first dielectric waveguide and the second dielectric waveguide in some embodiments. Furthermore, embodiments may include a repeater communicatively coupled between the first dielectric waveguide and the second dielectric waveguide. In an embodiment, the repeater may be an active repeater or a passive repeater. According to an embodiment, a passive repeater may be integrated within the dielectric waveguide. The passive repeater may include a dispersion compensating material that produces a dispersion response in a signal that is substantially opposite to a dispersion response produced when the signal is propagated along the dielectric waveguide.

公开(公告)号：US20190288371A1

公开(公告)日：2019-09-19

申请号：US16345173

申请日：2016-12-20

Applicant: Intel Corporation

Inventor： Telesphor KAMGAING ,  Georgios C. DOGIAMIS ,  Sasha N. OSTER

IPC: H01Q1/22 ,  H01L23/66 ,  H01L23/31 ,  H01L23/538 ,  H01L25/065 ,  H01Q1/38

Abstract: Embodiments of the invention include a microelectronic device that includes a first substrate having radio frequency (RF) circuits and a second substrate coupled to the first substrate. The second substrate includes a first section and a second section with the second substrate being foldable in order to obtain a desired orientation of an antenna unit of the second section for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.