公开(公告)号：JPH05114576A

公开(公告)日：1993-05-07

申请号：JP30412891

申请日：1991-10-22

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/28

Abstract: PURPOSE:To enhance the reliability upon the connecting electrode by avoiding the slipping of the connecting electrode out of a contact hole when a stress is imposed on the connecting electrode by a method wherein the connecting electrode is formed into a shape making the connecting electrode hardly slip out of the contact hole. CONSTITUTION:The connecting electrode 15 is provided in a contact hole 13 formed in an insulating layer 12 between a substrate 11 and a wiring pattern 13 (or an insulating layer between lower pattern and an upper pattern) and then at least exceeding one trench 14 is formed on the sidewall of the contact hole 13 while a flange part 16 to be buried in the trench 14 is formed on the sidewall of the connecting electrode 15. Otherwise, the sidewall of the contact hole is formed in outward bulged state simultaneously the connecting electrode is formed to be coupled with the outward bulged inner shape of the contact hole.

公开(公告)号：JPH0565655A

公开(公告)日：1993-03-19

申请号：JP22936291

申请日：1991-09-10

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

Abstract: PURPOSE:To uniformalize the distribution of film thickness or that of an etching rate by minutely controlling the distribution of plasma density in a chamber of an ECR type plasma treating apparatus. CONSTITUTION:An auxiliary coil 12 is arranged at the lower part of a sample stand 1 mounted with a wafer 17 in a reaction chamber 10, and the inside of the auxiliary coil 12 is provided with a ferromagnetic body 16 changing the distribution of the magnetic flux density of the auxiliary coil 12 into a concentric circular shape in the facial direction of the wafer. The shape of the above ferromagnetic body 16 is a disk one and is formed in such a manner that its thickness increases from the center to the circumference. Thus, in the magnetic field generated by the auxiliary coil 12, it is made strong at the outside and is made weak at the inside, and the flow of plasma spreading to the outside by the influence of the diverging magnetic field of the main coil 13 is corrected, by which plasma density on the face of the wafer can be uniformalized.

公开(公告)号：JPH04343418A

公开(公告)日：1992-11-30

申请号：JP11578591

申请日：1991-05-21

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: C23C16/04 ,  C23C16/44 ,  C23C16/458 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285

Abstract: PURPOSE:To enable heating time until a set temperature in a CVD device to be reduced and at the same time achieve a uniform heating for preventing a particle from being generated by constituting a wafer support stand so that only a wafer is directly heated through a metal material with an improved thermal conductivity. CONSTITUTION:A semiconductor substrate 1 where a metal CVD is allowed to grow is in contact with a support stand 2 which consists of a metal with an improved thermal conductivity except its periphery portion. An edge portion of the support stand 2 is in a hat shape with an extended portion 2a so that it does not contact the periphery portion of the semiconductor substrate 1. Also, a purge gas introduction path 13 is provided at a semiconductor substrate surface side of the extended portion 2a for covering with a silica glass plate 4, thus enabling only the semiconductor substrate 1 to be heated through the support stand 2 and achieving a selective metal CVD by controlling temperature. Also, no metal thin film is formed on a surface of the support stand 2, generation of a large amount of reaction by-products is prevented, and an improved selectivity can be maintained.

公开(公告)号：JPH04293233A

公开(公告)日：1992-10-16

申请号：JP5893191

申请日：1991-03-22

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI ,  SATO JUNICHI

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768

Abstract: PURPOSE:To form a metal plug of high reliability. CONSTITUTION:In a method for forming a metal plug in a connection hole 14 of an insulating film 13, an adhesion layer 15 is formed on the insulating film 13, and subjected to isotropic etching via a resist mask 20. Thereby the layer 15 of an area larger than an aperture 19 of the resist mask 20 is eliminated. A connection hole 14 is formed by anisotropically etching the insulating film 13. Metal 16 is formed so as to contain the connection hole 14 and etched, thereby forming a metal plug of high reliability in the connection hole 14.

公开(公告)号：JPH04286325A

公开(公告)日：1992-10-12

申请号：JP7435891

申请日：1991-03-15

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI ,  WATANABE TETSUO

IPC: H01L21/285 ,  H01L21/28

Abstract: PURPOSE:To prevent generation of so-called worm holes when tungsten is buried in a contact hole by a selective tungsten CVD. CONSTITUTION:A tungsten thin film 4 is formed in the contact hole 3 of the insulating film 2 on a silicon substrate 1 by a selective tungsten CVD. By the formation of the tungsten thin film 4 by the reduction of silicon and the like, self-limiting effect is generated, and the tungsten thin film 4 becomes a very thin film having excellent reproducibility. As the tungsten film 4 is thinly formed, the generation of worm holes can be suppressed even when an alloying treatment is conducted.

公开(公告)号：JPH04120757A

公开(公告)日：1992-04-21

申请号：JP24140490

申请日：1990-09-12

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768

Abstract: PURPOSE:To achieve selective growth of a high melt-point metal from an interface between an interlayer insulation film and a lower-layer wiring by forming a contact hole by overetching the interlayer insulation film. CONSTITUTION:Patterning is performed by forming a DOPOS film 11 and a WSix film 12 which are extended for example from a gate electrode along a wafer surface on an SiO2 insulation film 10 such as field oxide film and an interlayer insulation film 13 is deposited on it. Then, a resist pattern is formed by using the lithography technique and anisotropic etching is performed with this resist as a mask, thus enabling a contact hole 14 to be provided. A tungsten is allowed to grow selectively within the contact hole 14 by the CVD method. A nucleus-shaped tungsten particle 15a begins to grow at an interface between the WSix film 12 and the interlayer insulation film 13. After that, this tungsten particle 15a continues to grow as a species, thus enabling the contact hole 14 to be buried.