公开(公告)号：US20140050058A1

公开(公告)日：2014-02-20

申请号：US14062675

申请日：2013-10-24

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Jie Zou ,  Kaizhong Gao ,  William Albert Challener ,  Mark Henry Ostrowski ,  Venkateswara Rao Inturi ,  Tong Zhao ,  Michael Christopher Kautzky

IPC: G11B11/105

CPC classification number: G11B11/10534 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3136 ,  G11B5/314 ,  G11B2005/0021

Abstract: An apparatus including a near field transducer positioned adjacent to an air bearing surface, the near field transducer including an electrically conductive nitride; a first magnetic pole; and a heat sink, a diffusion barrier layer, or both positioned between the first magnetic pole and the near field transducer, wherein the heat sink, the diffusion barrier or both include rhodium (Rh) or an alloy thereof; ruthenium (Ru) or an alloy thereof titanium (Ti) or an alloy thereof tantalum (Ta) or an alloy thereof tungsten (W) or an alloy thereof borides; nitrides; transition metal oxides; or palladium (Pd) or an alloy thereof.

Abstract translation: 一种包括邻近空气轴承表面定位的近场换能器的装置，所述近场换能器包括导电氮化物; 第一个磁极; 以及位于第一磁极和近场换能器之间的散热器，扩散阻挡层或两者，其中散热器，扩散阻挡层或二者均包括铑（Rh）或其合金; 钌（Ru）或其合金钛（Ti）或其合金钽（Ta）或其合金钨（W）或其合金硼化物; 氮化物 过渡金属氧化物; 或钯（Pd）或其合金。

公开(公告)号：US20130286804A1

公开(公告)日：2013-10-31

申请号：US13795616

申请日：2013-03-12

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Tong Zhao ,  Ibro Tabakovic ,  Michael C. Kautzky ,  Venkatram Venkatasamy ,  Jie Gong

IPC: G11B13/04

CPC classification number: G11B5/314 ,  G11B5/6088 ,  G11B13/04 ,  G11B2005/0021

Abstract: Disclosed herein is an apparatus that includes a near field transducer positioned adjacent to an air bearing surface of the apparatus; a first magnetic pole; and a heat sink positioned between the first magnetic pole and the near field transducer, wherein the heat sink includes a first and second portion, with the first portion being adjacent the near field transducer and the second portion being adjacent the first magnetic pole, the first portion including a plasmonic material, and the second portion including a diffusion blocking material.

公开(公告)号：US12249357B2

公开(公告)日：2025-03-11

申请号：US18410008

申请日：2024-01-11

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

Abstract: A method involves forming a metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. A surface of the metal layer defines a first metal bonding layer. A second metal bonding layer is provided on a target substrate having recording head subassemblies. Mating surfaces of the first and second metal bonding layers are activated and the carrier wafer is flipped and joined with the target substrate such that the first and second metal bonding layers are bonded and the metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US20240339125A1

公开(公告)日：2024-10-10

申请号：US18750002

申请日：2024-06-21

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  B81C1/00 ,  B82B1/00 ,  B82Y10/00 ,  G11B5/00 ,  G11B11/24 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/67

CPC classification number: G11B5/3163 ,  B81C1/00111 ,  B82B1/003 ,  G11B5/3133 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y10/00 ,  G11B2005/0021 ,  G11B11/24 ,  H01L21/32136

Abstract: A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a thickness; and ion beam milling the layer of the template material to remove thickness less than the first thickness. The ion beam milling may be performed at a two different angles during two different repetitions. At least one of the angles is a channeling angle defined relative to a crystalline microstructure of the template material. After the repetitions, additional material may be deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

公开(公告)号：US11935567B2

公开(公告)日：2024-03-19

申请号：US17877434

申请日：2022-07-29

Applicant: Seagate Technology LLC.

Inventor： Michael Christopher Kautzky ,  Tong Zhao ,  Li Wan ,  Xiaolu Kou

IPC: G11B5/31 ,  C30B25/04 ,  G11B5/105 ,  G11B5/127 ,  G11B5/84 ,  G11B7/124 ,  H01L33/00 ,  G11B5/00 ,  G11B5/60

CPC classification number: G11B5/314 ,  C30B25/04 ,  G11B5/105 ,  G11B5/1272 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/84 ,  G11B7/124 ,  H01L33/0093 ,  G11B2005/0021 ,  G11B5/6088

Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

公开(公告)号：US11107499B2

公开(公告)日：2021-08-31

申请号：US16688656

申请日：2019-11-19

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuhang Cheng ,  Tong Zhao ,  Michael C. Kautzky ,  Ed F. Rejda ,  Kurt W. Wierman ,  Scott Franzen ,  Sethuraman Jayashankar ,  Sarbeswar Sahoo ,  Jie Gong ,  Michael Allen Seigler

IPC: G11B5/00 ,  G11B13/08 ,  G11B5/31 ,  G11B7/1387 ,  G11B7/24059 ,  G11B5/60 ,  C23C14/58 ,  C22C5/02 ,  C22C5/06 ,  C22C9/02 ,  C22C9/08 ,  C22C11/04 ,  C22C13/00 ,  C22C18/02 ,  C22C19/03 ,  C22C20/00 ,  C22C21/00 ,  C22C21/02 ,  C22C21/10 ,  C22C22/00 ,  C22C27/00 ,  C22C27/02 ,  C22C27/06 ,  C22C38/06 ,  G11B5/48 ,  C01F7/00 ,  C01G5/00 ,  B32B15/01 ,  C22C5/04 ,  C22C5/10 ,  C22C9/00 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C9/10 ,  C22C19/07 ,  C22C21/06 ,  C22C24/00 ,  C22C28/00 ,  C22C30/02

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

公开(公告)号：US11107496B2

公开(公告)日：2021-08-31

申请号：US16731526

申请日：2019-12-31

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Martin Blaber ,  Li Wan

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/48 ,  C22C5/04 ,  G11B5/00

Abstract: Heat assisted magnetic recording (HAMR) devices that includes a near field transducer, the near field transducer including alloys of a first element selected from: platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), and osmium (Os); and a second element selected from; hafnium (Hf), niobium (Nb), tantalum (Ta), titanium (Ti), vanadium (V), and zirconium (Zr).

公开(公告)号：US10964347B2

公开(公告)日：2021-03-30

申请号：US15357333

申请日：2016-11-21

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuhang Cheng ,  Tong Zhao ,  Michael C. Kautzky ,  Ed F. Rejda ,  Kurt W. Wierman ,  Scott Franzen ,  Sethuraman Jayashankar ,  Sarbeswar Sahoo ,  Justin Glen Brons ,  Steve C. Riemer ,  Jie Gong ,  Michael Allen Seigler

IPC: G11B11/00 ,  G11B5/40 ,  G11B13/08 ,  C01F7/00 ,  C01G5/00 ,  C22C5/02 ,  C22C5/06 ,  C22C9/02 ,  C22C9/08 ,  C22C11/04 ,  C22C13/00 ,  C22C18/02 ,  C22C19/03 ,  C22C20/00 ,  C22C21/00 ,  C22C21/02 ,  C22C21/10 ,  C22C22/00 ,  C22C27/00 ,  C22C27/02 ,  C22C27/06 ,  C22C38/06 ,  C23C14/58 ,  G11B5/31 ,  G11B5/48 ,  G11B5/60 ,  G11B7/1387 ,  G11B7/24059 ,  B32B15/01 ,  G11B5/00 ,  C22C5/04 ,  C22C5/10 ,  C22C9/00 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C9/10 ,  C22C19/07 ,  C22C21/06 ,  C22C24/00 ,  C22C28/00 ,  C22C30/02

Abstract: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

公开(公告)号：US10580439B2

公开(公告)日：2020-03-03

申请号：US16160661

申请日：2018-10-15

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Justin Brons ,  Tong Zhao ,  Yuhang Cheng ,  Dimitar V. Dimitrov

IPC: G11B5/31 ,  G11B5/00

Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.

公开(公告)号：US10482914B2

公开(公告)日：2019-11-19

申请号：US15952506

申请日：2018-04-13

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Yuhang Cheng ,  Tong Zhao ,  Michael C. Kautzky ,  Ed F. Rejda ,  Kurt W. Wierman ,  Scott Franzen ,  Sethuraman Jayashankar ,  Sarbeswar Sahoo ,  Jie Gong ,  Michael Allen Seigler

IPC: G11B5/00 ,  G11B13/08 ,  G11B5/31 ,  G11B7/1387 ,  G11B7/24059 ,  C22C5/02 ,  C22C5/06 ,  C22C9/02 ,  C22C9/08 ,  C22C11/04 ,  C22C13/00 ,  C22C18/02 ,  C22C19/03 ,  C22C20/00 ,  C22C21/00 ,  C22C21/02 ,  C22C21/10 ,  C22C22/00 ,  C22C27/00 ,  C22C27/02 ,  C22C27/06 ,  C22C38/06 ,  G11B5/48 ,  C01F7/00 ,  C01G5/00 ,  G11B5/60 ,  C23C14/58 ,  C22C5/04 ,  C22C5/10 ,  C22C9/00 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C9/10 ,  C22C19/07 ,  C22C21/06 ,  C22C24/00 ,  C22C28/00 ,  C22C30/02 ,  B32B15/01

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.