公开(公告)号：JP2002298777A

公开(公告)日：2002-10-11

申请号：JP2001097416

申请日：2001-03-29

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  CHO AKIMI

IPC: H01J1/30 ,  H01J61/067 ,  H01J61/16

Abstract: PROBLEM TO BE SOLVED: To provide a cold cathode discharge lamp exhibiting enhanced emission efficiency and long service life by a cold cathode having enhanced secondary electron emission efficiency and sputtering resistance. SOLUTION: The cold cathode discharge lamp exhibiting enhanced emission efficiency and long life can be achieved by using carbonaceous cold cathodes 19 and 20 constituted by a mixed phase of diamond and graphite. It is preferable to add an element having a main emission wavelength of 200 nm or less, such as Xe, into a discharge gas.

公开(公告)号：JP2001185714A

公开(公告)日：2001-07-06

申请号：JP36707499

申请日：1999-12-24

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  CHO TOSHI

IPC: H01L29/06 ,  H01J1/304 ,  H01L29/66

Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of the dielectric breakdown which is apt to occur between an emitter and a gate. SOLUTION: An electron emitting element comprises a structural substrate, an emitter which is formed on the substrate and has a sharp front end, and an insulating layer which is formed around the emitter in such a way that the front end of the emitter is exposed. The element also comprises a gate electrode which covers the insulating layer in such a way that the front end of the emitter is exposed. The opening of the gate is made smaller in size than the base section of the emitter and the distance from the emitter to the gate along the insulating layer is made longer than the linear distance from the emitter to the gate.

公开(公告)号：JP2000251615A

公开(公告)日：2000-09-14

申请号：JP4980299

申请日：1999-02-26

Applicant: TOSHIBA CORP

Inventor： SAKUMA HISASHI ,  SAKAI TADASHI ,  ONO TOMIO ,  CHO TOSHI

IPC: H01J1/304 ,  H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a new vacuum micro element producing method and a structure thereof showing a highest characteristic obtained, when a diamond is used for an emitter. SOLUTION: A thermally oxidated film 104 serving as a gate insulation layer is formed at an Si substrate 101, having a recessed portion 102 whose bottom is made sharp, and a diamond layer being an emitter layer is formed only in a mold. The Si substrate 101 is connected to a glass substrate which is a second substrate, and the substrate 101 is removed by etching. A gate layer and a thermally oxidated film which is the gate layer are etched in order to expose a protruding portion of the diamond layer 103 being the emitter layer, and thereby a diamond emitter is formed.

公开(公告)号：JP2000090809A

公开(公告)日：2000-03-31

申请号：JP25551998

申请日：1998-09-09

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  CHO TOSHI ,  NAKAYAMA KAZUYA

IPC: H01J9/02 ,  C01B31/02 ,  H01J1/30 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To provide an electric field emission cathode that can be operated at low electric field having a micro structure. SOLUTION: A carbon nano-tube 1 is suspended in a resist 2 and dispersed in the resist 2. The resist 2 is coated on a conductive substrate 4. Then the surface of a suspension resin layer 5 of the resist 2 is selectively etchbacked, leaving the carbon nano-tube 1, to project the tip of the carbon nano-tube 1. The coated resist 2 is cured to reduce electric resistance of the resist 4.

公开(公告)号：JP2000067738A

公开(公告)日：2000-03-03

申请号：JP24147098

申请日：1998-08-27

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  CHO TOSHI

IPC: H01J1/304 ,  H01J9/02 ,  H01L29/66

Abstract: PROBLEM TO BE SOLVED: To decrease gate current without increasing operating voltage and enhance efficiency by forming a low work function electron emission material layer supported on the surface of a substrate and having a diameter smaller than an opening diameter of a gate layer. SOLUTION: An SiO2 layer as an insulating layer and an Mo layer 13 as a gate layer are formed on an Si substrate 11 in order, and etching treatment is conducted to expose the Si surface to form an opening 14. Then, an Al layer 15 is formed, seeding treatment is conducted, and only the Al layer 15 is selectively etched to remove it. A diamond layer 17b acting as an emitter layer is formed. Since the growth of diamond occurs in only a part 16 where seeding treatment is conducted, an emitter comprising diamond having a diameter smaller than the opening diameter of a gate. Therefore, diamond is formed in only the central part of the opening 14 contributing to anode current. Since a part of the end of a gate layer contributing to the gate current is the Si surface having a large work function, field emission is practically not generated.

公开(公告)号：JPH11265652A

公开(公告)日：1999-09-28

申请号：JP6830398

申请日：1998-03-18

Applicant: TOSHIBA CORP

Inventor： SAKUMA HISASHI ,  ONO TOMIO ,  SAKAI TADASHI

IPC: H01J1/304 ,  H01J1/30

Abstract: PROBLEM TO BE SOLVED: To attain an improvement in heat radiating property and low voltage drive in a vacuum microelement having an amorphous carbon thin film as an emitter. SOLUTION: A Mo metal layer (metal thin film) with a protruding part which is an emitter, a Si layer 103 and a DLC layer 104 consisting of an amorphous carbon such as diamond-like carbon or amorphous carbon are successively laminated on a quartz glass 101. A gate insulating film 105 and gate electrode having opening parts in the protruding part are successively laminated on the DLC layer 103.

公开(公告)号：JPH10255647A

公开(公告)日：1998-09-25

申请号：JP6104497

申请日：1997-03-14

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI

IPC: H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an electron emitting device with a large area having a number of emitters in large quantities at a low cost. SOLUTION: In each of a plurality of opening forming areas selected on a Si substrate 11, a number of fine recessed parts 13 having inclined side walls within the surface of the substrate 11 are formed, and a large recessed part 14 extending through the bottom part of the recessed parts 13 is formed within the reverse side, whereby a mask 16 is manufactured. On the other hand, a conductive layer 19, an insulating layer 20, and a conductive gate layer 21 are formed on a glass substrate 18 to prepare a substrate TS to be worked. The mask 16 is set on the substrate TS with the reverse side up, dry etched to form fine holes 22 on the substrate TS in confirmation to the recessed parts 13 of the mask base. An emitter material is deposited by vacuum deposition, and emitters 23 are formed in the holes 22. The mask 16 is recycled to another substrate to be worked after the adhered emitter material is removed.

公开(公告)号：JPH1092297A

公开(公告)日：1998-04-10

申请号：JP24278696

申请日：1996-09-13

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To provide a small cold-cathode tube having improved conductivity on the surface and an improved electron emission characteristic by using a diamond for a protruded cold cathode, and insulating the cold cathode from a control electrode via a thermally nitrified Si layer. SOLUTION: An n-type Si layer 13 is formed on the surface of a p-type Si layer 12 by doping, a pyramid type opening section is formed by etching, it is covered with a thermally oxidized Si layer 2, the surface is thermally nitrified, and a die inner wall is converted into a thermally nitrified Si layer 4. A diamond layer 1 is filled in a die by the hot filament CVD method, and a Ti layer 5 and a Cu layer 6 are deposited in sequence on this film surface. A Ni layer is deposited on a glass substrate 9 and covered with a solder layer 7, it is connected to a substrate formed with a diamond by soldering, only the p-type region of the Si die is selectively removed by electrochemical etching to form a control electrode opening section, the thermally oxidized Si layer 2 and the thermally nitrified Si layer 4 are removed in sequence to expose a cold-cathode tip section 10, and a cold-cathode tube with a control electrode is obtained.

公开(公告)号：JPH1092296A

公开(公告)日：1998-04-10

申请号：JP24208696

申请日：1996-09-12

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting element for unifying the electron emission and reducing the operating voltage by making the distance between the emitter and gate of a diamond uniform and short in a substrate. SOLUTION: A thin n-layer (gate electrode layer) 101 is formed on the surface of a Si substrate 10 having the p-type (100) crystal orientation by thermal diffusion, a square opening is formed by patterning, and a pyramidal recess 12 sharpened at the bottom section is formed by anisotropic etching. A p-layer (gate insulating layer) 102 including the recess 12 is formed on the surface of the Si substrate 10 by thermal diffusion, a diamond layer 13 including the recess 14 is formed on the Si substrate 10, and the portion formed in the recess 12 of the diamond layer 13 becomes an emitter 14. Only the p-type portion of the Si substrate 10 is selectively removed by electrochemical etching, etching is completed immediately after the p-layer 102 covering the tip section of the emitter 14 is etched, and a part of the p-layer 102 is left to complete an electron emitting element.

公开(公告)号：JPH09265895A

公开(公告)日：1997-10-07

申请号：JP7562596

申请日：1996-03-29

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  CHO TOSHI ,  SAKUMA HISASHI

IPC: H01J21/10 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01L29/66

Abstract: PROBLEM TO BE SOLVED: To enable anode to be integrated by forming an anode, an anode gate, and a gate layer based on the three-layer structure board of Si/oxidation film/Si being structurally stable and providing high pressure resistance, structural strength, and stability. SOLUTION: An Si layer 1 is made by anode-formation, an anode-formation Si layer 2 is formed, this layer is oxidized, an anode-formation thermal oxidation Si layer 3 is formed, them then it is adhered to another Si layer. Here, the thickness of the anode-formation thermal oxidation Si layer 3 is 1 to 200 micrometers and 1/2 of the Si layer 1, and deformation due to stress is prevented. Next, boron is diverged in a gate Si layer with high concentration, and a p++ diffusion layer 6 is formed. Further, an emitter mold 7 is etched, and a thermal; oxidation Si layer 8 is formed to be a gate insulation film. Furthermore, an anode Si layer is etched, and an anode opening 9 is formed. Moreover, an emitter layer 11, an anode gate insulation spacer opening 10, a gate opening 12, and an insulation layer 13 are formed. Thereby, high pressure resistance, structural strength, stability, and integration are ensured.