公开(公告)号：JP2000285773A

公开(公告)日：2000-10-13

申请号：JP9336499

申请日：1999-03-31

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  KAMIKAWAJI TORU ,  TSURUNAGA KAZUYUKI ,  ONO TOMIO ,  CHO TOSHI ,  NAKAYAMA KAZUYA

IPC: H01H33/66 ,  H01J19/24 ,  H01J21/08

Abstract: PROBLEM TO BE SOLVED: To improve delay in current interruption by arc in opening and the wear of the surface of an electrode for extending the service life by relatively arranging a first electrode and a second electrode contactable with and separable from the first electrode under reduced pressure, and forming a carbonaceous electron emitting film as the field electron emitting area on both the electrode surfaces. SOLUTION: A fixed electrode and a movable electrode contactable with and separable from it are arranged relatively under the reduced pressure of a vacuum casing, and a carbonaceous thin film that is a field electron emitting layer is formed on a part of both the electrode surfaces by plasma CVD method. As the carbonaceous thin film, a polycrystalline diamond layer reduced in resistance by boron dope to regulate the electron emitting threshold field to about 10 V/μm is used form the viewpoint of the durability to impact in current re- input. According to this, the current is replaced by the field emitting electron current accompanying opening of a pole, and when the electric field is reduced by the separation of the electrodes, the electron emission is quickly settled, and the current can be interrupted without waiting for the current zero point. Thus, generation of arc can be suppressed to extend the service life.

公开(公告)号：JPH0973858A

公开(公告)日：1997-03-18

申请号：JP22798995

申请日：1995-09-05

Applicant: TOSHIBA CORP

Inventor： CHO TOSHI ,  SAKAI TADASHI ,  ONO TOMIO ,  YAMAUCHI TAKASHI

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/30

Abstract: PROBLEM TO BE SOLVED: To provide a field emitting cold cathode device which can have a broader range of choice of usable materials than conventional ones, enhance the efficiency and uniformity of field emission and the uniformity of energy, and excels in mass-productivity. SOLUTION: AlGaAs layers 102 and GaAs layers 103 are stacked alternately, and a metal (Al) film 104 is formed over one of the cross sections of the layers to form a contact and a substrate. A GaAs high-doped layer 105 is formed at each end, and electrodes are formed on both sides of the layer 105 by vapor deposition of metal (Al) 106.

公开(公告)号：JP2002100958A

公开(公告)日：2002-04-05

申请号：JP2000291796

申请日：2000-09-26

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  CHO TOSHI ,  FUNAKI HIDEYUKI

IPC: H03H9/25 ,  H03H3/08

Abstract: PROBLEM TO BE SOLVED: To provide a surface acoustic wave element which has a frequency characteristic over a wideband and which is low-cost by a method where a piezoelectric material having a large electromechanical coupling coefficient is used and a diamond polishing process is omitted in the surface acoustic wave element, in which a diamond is used for a propagation medium, and to provide its manufacturing method. SOLUTION: The surface acoustic wave element is provided with a piezoelectric substance layer 16, which comprises a first main face and a second main face as the rear with reference to the first main face, an electromechanical conversion electrode 19 which is formed on the first main face of the layer 16, which converts an electric signal into surface acoustic waves and which converts the surface acoustic waves into the electrical signal, a silicone layer 12 which is formed on the second main face of the layer 16, a diamond layer 13 which is formed on the silicone layer 12 and, in which the surface acoustic waves are propagated and a support substrate 14 which is bonded to the diamond layer 13 via an adhesive 15.

公开(公告)号：JP2002094355A

公开(公告)日：2002-03-29

申请号：JP2000278443

申请日：2000-09-13

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  CHO TOSHI ,  FUNAKI HIDEYUKI

IPC: H03H9/25 ,  H03H3/08

Abstract: PROBLEM TO BE SOLVED: To provide a surface acoustic wave element having a superior piezoelectric layer without the step of polishing of diamond layer, and to provide its manufacturing method. SOLUTION: This element provides a surface acoustic wave element that is provided with a piezoelectric bulk layer 20 having a front side and a rear side, an electromechanical conversion electrode 5 that is formed on the front side of the piezoelectric bulk layer 20, a diamond growing layer 1 formed on the rear side of the piezoelectric bulk layer 20, and a support substrate 3 that is adhered to the diamond growing layer 1 via an adhesive material 4.

公开(公告)号：JP2001015010A

公开(公告)日：2001-01-19

申请号：JP18654899

申请日：1999-06-30

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  CHO TOSHI

IPC: G09G3/10 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To provide an electron element for separating a short-circuit portion speedily and certainly, by dividing the element having many emitters as a plurality of blocks, and electrically separating a short-circuit block by an active element that automatically suppresses current during a short circuit between an emitter and a gate. SOLUTION: A portion sandwiched by two island-like p-type regions 52 forms a so called joint field-effect transistor(JFET), and an electrode 59 forms a short- circuit state between a source electrode and a gate electrode of the JFET. A voltage of a drain equals to a supply voltage and a source voltage during a short circuit between an emitter and a gate is null, so that saturated current flows. During normal operation only a slight part of an emitter current flows as a gate current, so that the source voltage decreases slightly than the supply voltage. The saturated current can be decreased by shortening a gap between the p-type regions 52 and increasing the length in the current flow direction to electrically separate a short-circuit block.

公开(公告)号：JPH09213202A

公开(公告)日：1997-08-15

申请号：JP1744896

申请日：1996-02-02

Applicant: TOSHIBA CORP

Inventor： CHO TOSHI ,  SAKAI TADASHI ,  ONO TOMIO

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To enable low-voltage drive and high-frequency field emission. SOLUTION: Grooves 12b are formed in an N-type semiconductor substrate 11. A thin film of P-type diamond 13, a gate insulating film 16, and a gate electrode 17 are buried in the grooves 12b. The thin film 13, the gate insulating film 16, and the gate electrode 17 at their exposed ends 20 are on the same plane and are interposed to cross with the interfaces of the films 13, 16 at right angles. An anode electrode 18 is interposed to face the ends 20 through the vacuum atmosphere. Applying a voltage across the gate electrode 17 and the substrate 11 to provide the gate electrode 17 with a positive decreases the work function at the surface region of the thin film 13 of diamond facing the gate electrode 17. Applying a potential higher than that of the gate electrode 17 to the anode electrode 18 emits electrons from the part on the end 20 of the surface region having the decreased work function.

公开(公告)号：JPH0963464A

公开(公告)日：1997-03-07

申请号：JP21487795

申请日：1995-08-23

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  CHO TOSHI

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To obtain an electric field emission type cold cathode and the manufacture of it capable of lowering operating voltage by shortening the distance between a gate and an emitter, and inhibiting the effect of the possible destruction of partial emitter from spreading over the whole surface. SOLUTION: A recessed part 12, having a lower part opening diameter smaller than an upper part opening diameter, is formed on an SOI substrate 11 by utilizing the anisotropic etching of Si to etch an SiO2 layer 13 to form a hole 14, and then A1 is vacuum-deposited from an oblique direction, while rotating the SOI substrate 11, to form an Al layer 15. After that, Mo, emitter material, is vacuum-deposited onto the substrate 11 from a vertical direction to conically deposit the Mo in the hole 14, by utilizing the deposition of a layer 16, and also the filling of the diameter of the hole 14 to form an emitter 16a.

公开(公告)号：JP2002203470A

公开(公告)日：2002-07-19

申请号：JP2000401174

申请日：2000-12-28

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  CHO TOSHI

IPC: H01J29/04 ,  H01J1/304 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To improve the density of the emitted current which has been insufficient in a conventional device, with low electric field characteristic in an electron emitter using diamond. SOLUTION: This electron emitter includes a donor impurity element in a surface of a diamond layer 24, and has an emitter layer 25 for emitting the electron. A metallic cathode electrode 26 having the mesh shape is mounted on a surface for supplying the electron to the emitter layer 25. An anode electrode 32 is mounted oppositely to the emitter layer 25 at a side having the cathode electrode 26. A clearance between the emitter layer 25 and the anode electrode 32 is formed as a vacuum space 36 for moving the electron emitted from the emitter layer 25.

公开(公告)号：JP2002015658A

公开(公告)日：2002-01-18

申请号：JP2000199003

申请日：2000-06-30

Applicant: TOSHIBA CORP

Inventor： CHO TOSHI ,  SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI

IPC: B82B1/00 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide an electric field emission type cold cathode device which can perform an electric field emission of high current intensity at an extremely low voltage. SOLUTION: An undoped diamond film 12 formed by CVD is laminated on a diamond substrate 11, and an n type diamond layer 13 is formed on a surface of diamond film 12. A surface layer 16 composed of a hydrogen terminal diamond layer formed by hydrogen adsorbed on a surface of the diamond layer 13 is arranged and installed at a position corresponding to a flat panel type emitter 1E. Further an insulating layer 14 composed of an oxygen-containing organic layer formed by oxidation treatment of the surface of diamond layer 13 is arranged and installed. A gate electrode 15 is arranged and installed on the insulating layer 14 to face the emitter 1E. An anode electrode 17 to oppose to the emitter 1E through an opening 19 is arranged and installed.

公开(公告)号：JP2000231871A

公开(公告)日：2000-08-22

申请号：JP2000020291

申请日：2000-01-28

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  NAKAYAMA KAZUYA ,  CHO TOSHI ,  GEHAN A J AMARATOUNGA ,  AI ALEXANDRO ,  MARK BAXANDALL ,  N RUPASHINGU

IPC: C23C14/06 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02

Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting film excellent in electron emission, in mechanical strength, and in work characteristics, and provide a field emission type cold cathode device using the same electron emitting film. SOLUTION: This electron emitting film is made up of a matrix basically composed of amorphous carbon and fullerene structure basically composed of a two-dimensional train of six-membered rings of carbon. The fullerene structure is dispersed in the matrix and partly projects from the matrix. The weight ratio of the amorphous carbon to the fullerene structure ranges from 50:50 to 5:95. The amorphous carbon contains nitrogen having a concentration of about 1×1015 cm3 to 10 atomic % that acts as a donor.