公开(公告)号：JP2013074034A

公开(公告)日：2013-04-22

申请号：JP2011210972

申请日：2011-09-27

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： KATAGIRI MASAYUKI ,  YAMAZAKI YUICHI ,  WADA MAKOTO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device with reduced interlayer wiring resistance, and a method of manufacturing the same.SOLUTION: A semiconductor device includes: a substrate; a first catalyst metal film on the substrate; a graphene on the first catalyst metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film electrically conductive to the graphene on the bottom of the contact hole; a second catalyst metal film, on the conductive film, processed with plasma of one or more kinds of gases selected from hydrogen, nitrogen, ammonia, and a rare gas; and carbon nano-tubes on the second catalyst metal film.

Abstract translation: 要解决的问题：提供具有降低的层间布线电阻的半导体器件及其制造方法。 解决方案：半导体器件包括：衬底; 在基板上的第一催化剂金属膜; 在第一催化剂金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 导电膜与接触孔底部的石墨烯导电; 在导电膜上的第二催化剂金属膜，用等离子体处理，所述等离子体选自氢，氮，氨和稀有气体中的一种或多种气体; 和第二催化剂金属膜上的碳纳米管。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2007059210A

公开(公告)日：2007-03-08

申请号：JP2005243253

申请日：2005-08-24

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

IPC: H01J61/06 ,  H01J9/02

CPC classification number: H01J61/0672 ,  H01J9/022 ,  H01J61/0675 ,  H01J61/72

Abstract: PROBLEM TO BE SOLVED: To provide a cold cathode for discharge lamp having high discharging efficiency and sufficiently exerting long life owing to diamond formed in uniform thickness even if the shape of a base material is not planar, and manufacturing method of a cold cathode discharge lamp and a cold cathode for the discharge lamp.
SOLUTION: The cold cathode for discharge lamp is composed of a conductive plate-shaped metal base material having curved part, diamond films formed on one or both faces of the plate-shaped metal base material excluding the curved part, and a metal member having electrode mounted on an opening part of the plate-shaped metal base material.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：为了提供一种具有高放电效率的放电灯的冷阴极，并且即使基材的形状不是平面的，即使形成均匀厚度的金刚石也能充分发挥长寿命，以及冷的制造方法 阴极放电灯和放电灯的冷阴极。 解决方案：放电灯的冷阴极由具有弯曲部分的导电板状金属基材，除了弯曲部分之外的板状金属基材的一面或两面形成金刚石膜，金属 具有安装在板状金属基材的开口部上的电极的部件。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005353535A

公开(公告)日：2005-12-22

申请号：JP2004175770

申请日：2004-06-14

Applicant: Harison Toshiba Lighting Corp ,  Toshiba Corp ,  ハリソン東芝ライティング株式会社 ,  株式会社東芝

Inventor： YOSHIDA HIROAKI ,  SAKUMA HISASHI ,  SUZUKI MARIKO ,  ONO TOMIO ,  SAKAI TADASHI ,  TAKAGI MASASANE ,  TOMITA YASUO ,  IKEDA TATSUYA

IPC: H01J9/28 ,  H01J9/02 ,  H01J9/32 ,  H01J61/06 ,  H01J61/36

Abstract: PROBLEM TO BE SOLVED: To provide a discharge lamp using diamond as a emissive material and having high light emitting efficiency, and its manufacturing method, and a high efficient discharge lamp having higher light emitting efficiency while temperature in the discharge lamp can be easily managed, and its manufacturing method.
SOLUTION: This discharge lamp is provided with a sealed envelope having a light transmission part and containing discharge gas and mercury, a pair of electrodes arranged in such a state that a diamond layer is formed as the emissive material on a surface of a substrate and a part is housed in the envelope at the end part of the envelope, a bonding layer provided on the electrode, a sealing material layer provided on the bonding layer, and a phosphor provided on the inner surface of the envelope. The bonding layer contains an element which is a component element of the sealing material layer and easily reacts with carbon. The envelope and the electrode are joined through the bonding layer and the sealing material layer.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种使用金刚石作为发光材料并具有高发光效率的放电灯及其制造方法，以及在放电灯中的温度下可以具有较高发光效率的高效放电灯 易于管理及其制造方法。 解决方案：该放电灯设置有具有光透射部分并且包含放电气体和汞的密封外壳，一对电极被布置成在金属层的表面上形成金刚石层作为发光材料 基板和一部分容纳在外壳的端部的封套中，设置在电极上的接合层，设置在接合层上的密封材料层和设置在外壳的内表面上的荧光体。 接合层包含作为密封材料层的成分元素的元素，并且容易与碳反应。 封套和电极通过接合层和密封材料层接合。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005346954A

公开(公告)日：2005-12-15

申请号：JP2004162102

申请日：2004-05-31

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  YOSHIDA HIROAKI ,  SUZUKI MARIKO

IPC: H01J61/06 ,  H01J1/00 ,  H01J1/05 ,  H01J1/14 ,  H01J1/308 ,  H01J61/067 ,  H01J61/073

CPC classification number: H01J1/308 ,  H01J61/0677 ,  H01J61/0737

Abstract: PROBLEM TO BE SOLVED: To provide a first discharge electrode achieving both high-efficiency secondary electron emission and long life, as well as a discharge lamp using the same.
SOLUTION: The first discharge electrode is equipped with an electron emission layer made of a wide forbidden band-width semiconductor substrate 1. The first discharge electrode defines a convex part (a rectangular parallelepiped column) R
i, j-2 , R
i, j-1 , R
i, j with an upper end face opposing a second discharge electrode and side walls to be faces not seen from a vertical direction of the upper end face, and is equipped with the electron emission layer, in which dangling bonds on the surface of the wide forbidden band-width semiconductor substrate 1 exposed to the side walls of the rectangular parallelepiped column R
i, j-2 , R
i, j-1 , R
i, j are terminated with hydrogen 3.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供实现高效二次电子发射和长寿命的第一放电电极以及使用该放电电极的放电灯。 解决方案：第一放电电极配备有由宽禁带宽半导体衬底1制成的电子发射层。第一放电电极限定凸部（矩形平行六面体柱）R i，j- 2 ，R i，j-1 ，R SB，i，j ，上端面与第二放电电极相对， 上端面的垂直方向，并且配备有电子发射层，其中暴露于长方体柱R SB的侧壁上的宽禁带宽半导体衬底1的表面上的悬挂键 ，j-2，R i，j-1，R i，j-1，R SB，i，j，...用氢3终止。（C） JPO＆NCIPI

公开(公告)号：JP2005294005A

公开(公告)日：2005-10-20

申请号：JP2004106710

申请日：2004-03-31

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI MARIKO ,  YOSHIDA HIROAKI

IPC: H01J1/15 ,  H01J1/14 ,  H01J61/06

Abstract: PROBLEM TO BE SOLVED: To obtain a thermionic cathode and its manufacturing method with a long life and low power consumption capable of stably performing thermionic emission from an n-type diamond in a low temperature action. SOLUTION: The thermionic cathode is equipped with an n-type diamond layer as an electron emission substance on a surface of a substrate, and the n-type diamond layer includes a layer containing a transition metal element on its surface layer part. Further, a process forming the n-type diamond layer on the surface of the substrate and a process containing a transition metal element from a surface layer side of the n-type diamond layer to the surface layer part of the n-type diamond layer are included. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了获得能够在低温作用下从n型金刚石稳定地进行热电子发射的长寿命和低功耗的热离子阴极及其制造方法。 解决方案：热离子阴极在衬底的表面上配备作为电子发射物质的n型金刚石层，n型金刚石层在其表面层部分包含含有过渡金属元素的层。 此外，在衬底表面上形成n型金刚石层的工艺以及从n型金刚石层的表层侧到n型金刚石层的表面层的含有过渡金属元素的工艺， 包括在内。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004221853A

公开(公告)日：2004-08-05

申请号：JP2003005735

申请日：2003-01-14

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: B81B3/00 ,  H03H9/24

Abstract: PROBLEM TO BE SOLVED: To solve the problem that termination resistance becomes large by making a frequency to be high without reducing a size of a micro mechanical filter and avoiding degradation of electromechanical conversion efficiency.
SOLUTION: The filter is provided with an input resonator 71, input driving electrodes (51, 52 and 91) arranged near the input resonator 71 so that they oscillate the input resonator 71 at a high-order resonance mode, a connector 10 connected to the input resonator 71, an output resonator 72 which is connected to the connector 10 and is excited by the oscillation of the input resonator 71 and detection electrodes (53, 54 and 92) detecting the oscillation of the output resonator 72 by a change of electrostatic capacity. A microwave signal of a specified frequency is made to pass by using only the specified high-order mode of the input resonator 71.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004127605A

公开(公告)日：2004-04-22

申请号：JP2002287443

申请日：2002-09-30

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: B81B3/00 ,  B81C1/00 ,  C23C28/02 ,  H01H1/06 ,  H01H59/00

Abstract: PROBLEM TO BE SOLVED: To provide a microswitch with excellent reliability, operating at a low switching voltage, of which the contact is made of a material other than Au.
SOLUTION: The microswitch comprises a base board 10; a drain electrode 18 fitted on the surface of the base board 10, a gate electrode 17 and a source electrode 16 which are formed on the surface of base board 10; a first contact 15 formed on and in contact with the drain electrode 18 composed of a microbrush which is an aggregate of conductive pillars with a diameter of 10 to 100 nm aggregated with an area density of 10
9 to 10
11 /cm2; and a beam 23 of a cantilever structure having a fulcrum electrically connected to the source electrode 16 driven by an electrostatic force imposed on the gate electrode 17, having a second contact 24 facing the first contact 15 at the movable tip thereof. The first contact 15 is made of a gold-nickel alloy (Au-Ni alloy) having excellent reliability and durability, and the second contact 24 is made of tungsten (W) having excellent reliability and durability.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003068592A

公开(公告)日：2003-03-07

申请号：JP2001251585

申请日：2001-08-22

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  SUZUKI MARIKO

IPC: H01L21/205 ,  H01L21/02 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a high quality semiconductor epitaxial substrate while up scaling a semiconductor material producing only a small size crystal to practical size.
SOLUTION: The method for producing an epitaxial substrate comprises a step for preparing a supporting substrate 300, a step for preparing a plurality of planar crystal substrates 201-204, a step for implanting ions from one major surface of the crystal substrates 201-204 to form ion implantation layers 201c-204c, a step for pasting the plurality of crystal substrates 201-204 and the supporting substrate 300 one another, a step for separating the plurality of crystal substrates 201-204 into a plurality of thin film tiles 201a-204a bonded to the first major surface and a plurality of parent material side crystal substrates 201b-204b by heat treatment, and a step for growing a single crystal layer 301 epitaxially on the sauce of the thin film tiles 201a-204a.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了提供高质量的半导体外延基板，同时将仅生产小尺寸晶体的半导体材料缩放至实际尺寸。 解决方案：用于制造外延衬底的方法包括制备支撑衬底300的步骤，制备多个平面晶体衬底201-204的步骤，将离子从晶体衬底201-204的一个主表面注入到 形成离子注入层201c-204c，将多个晶体基板201〜204以及支撑基板300粘贴的工序，将多个晶体基板201〜204分离成多个薄膜瓦201a〜204a 通过热处理结合到第一主表面和多个母材侧晶体基板201b-204b，以及在薄膜瓦片201a-204a的酱汁上外延生长单晶层301的步骤。

公开(公告)号：JP2002150921A

公开(公告)日：2002-05-24

申请号：JP2000339481

申请日：2000-11-07

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  CHO TOSHI ,  SAKUMA HISASHI

IPC: H01J29/04 ,  H01J1/304 ,  H01J19/24 ,  H01J21/10 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide a field emission type cold cathode that will function, even if defective elements exist partially. SOLUTION: In the field emission type cathode that is comprised of an emitter array in which emitters 3 are arranged on the two dimensional face, a laminate 4 that covers the above emitter array be exposing the top end of the emitters 3, and a gate electrode layer 7 that is formed on the laminated 4, so as to surround each top end part of the emitters 3, the gate electrode layers 7 are connected to each other by a fuse electrode layer 8 that is blown out by the heat of short-circuit current.

公开(公告)号：JP2001185018A

公开(公告)日：2001-07-06

申请号：JP36707399

申请日：1999-12-24

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  SAKAI TADASHI ,  SAKUMA HISASHI ,  CHO TOSHI

IPC: H01J9/02 ,  H01J1/304

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element having a small potential drop and electron emission of a lower threshold value and a method of manufacturing the same. SOLUTION: At outer periphery of an emitter of which a sharpened tip consists of carbonaceous electron emission substance such as diamond 16 or the like of convex shape 19, a thin conductive layer 15 is installed to expose the tip of the emitter.