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    ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS
    113.
    发明申请
    ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS 审中-公开
    微型投影曝光装置照明系统

    公开(公告)号：US20110001948A1

    公开(公告)日：2011-01-06

    申请号：US12871979

    申请日：2010-08-31

    Applicant: Udo Dinger

    Inventor： Udo Dinger

    IPC: G03B27/54 ,  G03F7/20 ,  G03B27/70

    CPC classification number: G03F7/70175 ,  G02B3/0056 ,  G03F7/70108 ,  G21K1/06 ,  G21K2201/064 ,  G21K2201/065 ,  G21K2201/067

    Abstract: An illumination system for a microlithography projection exposure apparatus generally includes an optical element formed of a plurality of facet elements. The facet elements are arranged such that, for each facet element, a proportion of the side surfaces of the facet element is at a certain distance from the side surfaces of all the other facet elements. This gives rise to interspaces between the facet elements which are not used optically. The interspaces can be used for simpler mounting of the facet elements or for fitting mechanical components, such as actuators. A collector is used to efficiently illuminate such an optical element. The collector includes a plurality of segments that are in part non-continuous. Alternatively, however, continuous segments with a bend are also possible.

    Abstract translation: 用于微光刻投影曝光装置的照明系统通常包括由多个小面元件形成的光学元件。 小面元件布置成使得对于每个小面元件，小面元件的侧表面的一部分与所有其它小面元件的侧表面相距一定距离。 这导致在光学不使用的小面元件之间的间隙。 间隙可以用于更简单地安装小面元件或用于装配机械部件，例如致动器。 使用收集器来有效地照亮这样的光学元件。 收集器包括部分非连续的多个段。 但是，也可以是具有弯曲部的连续部分。

    EUV light source
    117.
    发明授权
    EUV light source 有权
    EUV光源

    公开(公告)号：US07411203B2

    公开(公告)日：2008-08-12

    申请号：US11647016

    申请日：2006-12-27

    Applicant: Igor V. Fomenkov ,  Alexander I. Ershov

    Inventor： Igor V. Fomenkov ,  Alexander I. Ershov

    IPC: H01J49/00

    CPC classification number: G03F7/70033 ,  B82Y10/00 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/065 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

    Abstract: An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a ibeus defining a desired plasma initiation site, comprising; a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis genemily perpendicular to the target stream track from a desired stream truck intersecting the desired plasma initiation site.

    Abstract translation: 公开了一种用于EUV光产生的装置和方法，其可以包括激光产生的等离子体（“LPP”）极紫外（“EUV”）光源控制系统，其包括适于递送移动等离子体引发靶的目标传送系统和EUV光收集 光学元件具有限定期望的等离子体起始位置的ibeus，包括： 目标跟踪和反馈系统，包括：至少一个成像装置，其提供目标流轨迹的图像作为输出，其中所述目标流轨迹由所述摄像机的成像速度导致太慢以不能成像形成所述目标的各个等离子体形成目标 流成像为目标流轨道; 流轨迹误差检测器，从与期望的等离子体起始位置相交的期望的流动车辆，在垂直于目标流轨迹的至少一个轴中至少一个轴上检测目标流轨迹的位置的误差。

    Optical thin film and mirror using the same
    118.
    发明授权
    Optical thin film and mirror using the same 失效
    光学薄膜和镜面使用相同

    公开(公告)号：US07286637B2

    公开(公告)日：2007-10-23

    申请号：US10546517

    申请日：2004-09-07

    Applicant: Kyoko Imai ,  Kenji Ando ,  Hidehiro Kanazawa

    Inventor： Kyoko Imai ,  Kenji Ando ,  Hidehiro Kanazawa

    IPC: G21K1/06

    CPC classification number: G21K1/062 ,  B82Y10/00 ,  G02B5/0891 ,  G02B5/283 ,  G03F7/70891 ,  G03F7/70958 ,  G03F7/70983 ,  G21K2201/065

    Abstract: To provide an optical thin film structure capable of efficiently dissipating heat in an optical thin film which is generated upon irradiating a surface of an X-ray mirror made up of the optical thin film with an X-ray. The optical thin film having an isotope purity higher than a natural isotope abundance ratio is formed on a mirror to increase heat conductivity of the optical thin film itself and quickly dissipate heat accumulated in the thin film to the outside of an optical system. Consequently, the mirror having high reflectively can be obtained, in which a fine structure of the optical thin film is by no means broken.

    Abstract translation: 提供能够在用X射线照射由该光学薄膜构成的X射线镜的表面上产生的光学薄膜中有效散发热的光学薄膜结构。 在反射镜上形成具有高于天然同位素丰度比的同位素纯度的光学薄膜，以提高光学薄膜本身的导热性，并将薄膜中累积的热量迅速地散发到光学系统的外部。 因此，可以获得高反射率的反射镜，其中光学薄膜的精细结构绝不破裂。

    EUV light source
    119.
    发明申请
    EUV light source 有权
    EUV光源

    公开(公告)号：US20070158596A1

    公开(公告)日：2007-07-12

    申请号：US11647007

    申请日：2006-12-27

    Applicant: I. Oliver ,  William Partlo ,  Igor Fomenkov ,  Alexander Ershov ,  Norbert Bowering ,  John Viatella ,  Dave Myers

    Inventor： I. Oliver ,  William Partlo ,  Igor Fomenkov ,  Alexander Ershov ,  Norbert Bowering ,  John Viatella ,  Dave Myers

    IPC: G01J3/10

    CPC classification number: G03F7/70033 ,  B82Y10/00 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/065 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

    Abstract: An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.

    Abstract translation: 描述了可以包括可以包括等离子体形成室的等离子体产生的极紫外（“EUV”）光源多层收集器的装置和方法; 等离子体形成室内的壳体，具有焦点的收集器形状; 壳体具有足够的尺寸和热质量以将工作热量从多层反射器散开，并且在壳体的与焦点相对的一侧上从壳体的表面辐射热量。 壳的材料可以包括选自可以包括碳化硅，硅，Zerodur或ULE玻璃，铝，铍，钼，铜和镍的组的材料。 装置和方法可以包括指向壳体的至少一个辐射加热器，以将壳体的稳态温度维持在所选择的工作温度范围内。

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