公开(公告)号：DE1690575B2

公开(公告)日：1976-11-11

申请号：DEJ0035473

申请日：1968-01-11

IPC: B23K15/02 ,  H01J37/304 ,  H01L21/00 ,  H01J37/30 ,  H01J3/10

Abstract: 1,160,353. Electron beam machining apparatus. INTERNATIONAL BUSINESS MACHINES CORP. 4 Jan., 1968 [13 Jan., 1967], No. 626/68. Heading H1D. [Also in Division G3] A beam of electrons is repeatedly scanned across an area with overshoots maintained equal on each side of the area by automatic control signals which are also utilized when the beam is moved to a working area to produce a pattern. In Fig. 3, an electron beam 19 has deflecting coils 54, 55 under the control of a programmed generator 91 to produce printed or integrated circuits on a silicon-doped wafer 20 by a series of operations. To ensure a correct datum position for the beam before the start of each operation deflecting coils 54, 55 are energized from a sine wave generator 77 and a slow sweep generator 76 so as to scan rectangular areas, formed by removing a silicon dioxide outer coating of the wafer or depositing noble metal over the coating of the wafer, in such a manner that the scan overshoots opposite edges of the rectangles. Secondary emission from a scanned area is collected at 59 and variations due to the overshoots filtered out at 62 for application to amplifiers 64, 67 which are gated by generator 77 so that each amplifier produces an output corresponding to the extent of overshoot of one edge. The two outputs are compared at 68 so that any difference is eliminated to correct the mean position of the beam by controlling through a switch 70 the energization of one or other of the additional deflecting coils 56, 57 according to which axis is being corrected. Correction relative to both axes in succession may be effected by programmer 85 changing over switch 70 as well as a switch 84 to transpose the generators associated with deflecting coils 54, 55. During the subsequent working operation the correction signals remain effective, being stored by integration amplifiers 71, 72. Simultaneous correction of the beam relative to the two axes using two different scanning frequencies is referred to.

公开(公告)号：SU415788A1

公开(公告)日：1974-02-15

申请号：SU1680354

申请日：1971-07-14

IPC: H03K3/53 ,  G01J3/10 ,  H01J3/10

公开(公告)号：NL7110514A

公开(公告)日：1972-02-15

申请号：NL7110514

申请日：1971-07-29

IPC: H01J3/10 ,  H01J37/063 ,  H01J37/065 ,  H01J29/48

Abstract: In an electron gun, an anode structure in which the electron beam aperture is defined by four mutually insulated anode segments which may be energized to provide beam centering. In a preferred embodiment, the anode segments are shaped to intercept the beam if it is off-center, and are returned to ground potential through respective resistors thereby being operative automatically to center the beam.

公开(公告)号：SU124561A1

公开(公告)日：1959-11-30

申请号：SU576420

申请日：1956-01-20

Applicant: VILDGRUBE G S

Inventor： VILDGRUBE G S

IPC: H01J40/16 ,  H01J3/10

公开(公告)号：GB716834A

公开(公告)日：1954-10-13

申请号：GB1657152

申请日：1952-07-01

Applicant: SIEMENS REINIGER WERKE AG

IPC: H01J3/10 ,  H01J35/10

Abstract: 716,834. X-ray tubes. SIEMENS-REINIGERWERKE AKT.-GES. July'1, 1952 [July 3, 1951], No. 16571/52. Class 39(1) The edge of the rotary anode of an X-ray tube carries a substantially perpendicular flange 5. which may be slightly frustoconical, and which is integral with the anode plate. The plate may be of tungsten, and pressed out of a single blank without a seam. Increased heat radiation is afforded, with protection of the rear of the anode from secondary electrons.

公开(公告)号：DE898195C

公开(公告)日：1953-11-30

申请号：DES0023781

申请日：1951-07-04

Applicant: SIEMENS REINIGER WERKE AG

Inventor： ZIMMER THEODOR DR ,  FENNER ECKHARD DR

IPC: H01J3/10 ,  H01J35/10

公开(公告)号：SU26066A1

公开(公告)日：1932-04-30

申请号：SU73988

申请日：1930-07-29

Applicant: PRZHEZDZETSKIJ-SAMBOR V M

Inventor： PRZHEZDZETSKIJ-SAMBOR V M

IPC: B07C5/10 ,  H01J3/10

公开(公告)号：KR101350035B1

公开(公告)日：2014-01-16

申请号：KR1020120154786

申请日：2012-12-27

Applicant: 한국원자력연구원

Inventor： 장규하 ,  이병철 ,  김병남 ,  송기백

IPC: H01J3/02 ,  H01J33/00 ,  H01J3/10

Abstract: 전자빔의 에너지를 용이하게 조절할 수 있고 듀얼 에너지 가속기의 전자빔 에너지를 용이하게 조절할 수 있는 전자빔 발생장치를 제공한다. 전자빔 발생장치는, CNT실(yarn)을 전자빔 방출 소스로 사용하여 전자빔을 발생시키는 전자빔 발생부, 상기 전자빔이 입사되어 가속되는 가속관 및 고주파를 발생시키고, 상기 전자빔 발생부와 상기 가속관에 각각 고주파를 인가하되, 상기 전자빔 발생부와 상기 가속관에 서로 다른 파워를 갖는 고주파를 인가하는 고주파 발생부를 포함하여 구성된다.

公开(公告)号：KR2019950009921U

公开(公告)日：1995-04-21

申请号：KR2019930019940

申请日：1993-09-28

Applicant: 오리온전기 주식회사

Inventor： 송영재

IPC: H01J3/10

Abstract: 본고안은음극선관용색 순도자석에관한것으로서, 보다상세하게는 6극색 순도자석에서색 순도조정용인 2극광컨버젼스조정용인 4, 6극을분리하여컨버젼스조정시 2극이움직여색 순도가변화됨을방지할수 있는음극선관용색 순도자석에관한것이다. 본고안의목적은음극선관용색 순도자석에서컨버젼스조정완료후 다시동 컨버젼스조정을할 때 2극링 자석이미동됨과아울러이로인한재 조정작업으로작업능률이저하됨을방지할수 있는음극선관용색순도자석을제공함에있다. 상기한목적을달성하기위해서, 본고안은 2, 4, 6극링 자석(50, 51, 52)이스페이서(56)가개재된상태로본체(53)에순차삽입되고제1고정링(54)으로고정되는음극선관용색 순도자석에있어서, 상기한 2극링 자석(50)과 4, 6극링 자석(51, 52)의사이에위치되도록본체(53)에구분돌기(1)를형성하고, 상기한 2극링 자석(50)을고정시킬수 있는제2고정링(2)을본체(53)에삽입하여구성함을특징으로하는음극선관용색 순도자석을제공한다.

公开(公告)号：KR1020130129815A

公开(公告)日：2013-11-29

申请号：KR1020120154786

申请日：2012-12-27

Applicant: 한국원자력연구원

Inventor： 장규하 ,  이병철 ,  김병남 ,  송기백

IPC: H01J3/02 ,  H01J33/00 ,  H01J3/10

Abstract: An electron beam generating device is provided to easily adjust the energy of an electron beam and easily adjust the electron beam energy of a dual-energy accelerator. The electron beam generating device comprises an electron beam generating part generating an electron beam by using CNT yarn as an electron beam emission source, and a high frequency generating part generating an acceleration tube in which the electron beam is accelerated and a high frequency and applying the high frequency to the electron beam generating part and the acceleration tube, but the frequency has different power. [Reference numerals] (12) RF generating unit;(121) High voltage modulator;(122) RF driving unit;(123) Low voltage modulator;(AA) Alignment;(BB) Dual RF energy

Abstract translation: 提供了一种电子束产生装置，用于容易地调节电子束的能量并容易地调节双能量加速器的电子束能量。 电子束产生装置包括通过使用CNT纱线作为电子束发射源产生电子束的电子束产生部件和产生加速管的高频产生部件，其中电子束被加速并施加高频 高频到电子束发生部分和加速管，但频率有不同的功率。 （12）RF发生单元;（121）高压调制器;（122）RF驱动单元;（123）低压调制器;（AA）对准;（BB）双RF能量