公开(公告)号：WO2016052997A1

公开(公告)日：2016-04-07

申请号：PCT/KR2015/010317

申请日：2015-09-30

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： PARK, Ki Yon ,  HAN, Yu Dae

IPC: H01L33/14

CPC classification number: H01L33/14 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

Abstract translation: 公开了一种UV发光装置。 UV发光装置包括：基板; 设置在所述基板上的n型半导体层; 设置在所述n型半导体层上的有源层; 空穴注入层，设置在有源层上并包含Al; Al-δ层，设置在空穴注入层上并包含Al; 以及设置在所述Al-δ层上并且具有比所述空穴注入层更高的p型掺杂剂的掺杂浓度的第一p型接触层，其中所述第一p型接触层具有比所述空穴注入层低的Al含量 第一p型接触层的带隙低于或等于从有源层发射的光的能量，并且Al-δ层具有比空穴注入层更高的Al含量，并且允许孔进入 有源层通过隧道穿过。

公开(公告)号：WO2016052885A1

公开(公告)日：2016-04-07

申请号：PCT/KR2015/009668

申请日：2015-09-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： BYUN, Sang Hwan

IPC: F24F6/00 ,  F24F3/16

CPC classification number: F24F6/00 ,  F24F2003/1667 ,  F24F2006/006 ,  F24F2006/008

Abstract: In an embodiment of the present disclosure, a sterilizing humidifier using ultraviolet rays includes: a cover unit in which an air inlet hole and an air outlet hole are formed; a fan unit disposed between the air inlet hole and the air outlet hole and moving air from the air inlet hole toward the air outlet hole; a storage unit coupled to the cover unit and containing liquid therein; a light emitting diode unit installed in the storage unit and radiating ultraviolet rays onto the liquid; and a liquid moving unit for moving the liquid contained in the storage unit to a space between the air outlet hole and the fan unit.

Abstract translation: 在本公开的实施例中，使用紫外线的消毒加湿器包括：盖单元，其中形成有空气入口孔和空气出口孔; 设置在所述进气孔和所述排气孔之间的风扇单元，以及从所述进气孔向所述排气孔移动空气; 联接到所述盖单元并在其中容纳液体的存储单元; 发光二极管单元，安装在所述存储单元中并将紫外线辐射到所述液体上; 以及液体移动单元，用于将容纳在存储单元中的液体移动到出气孔和风扇单元之间的空间。

公开(公告)号：WO2014204271A1

公开(公告)日：2014-12-24

申请号：PCT/KR2014/005482

申请日：2014-06-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： KIM, Ye Seul ,  KIM, Kyoung Wan ,  RYU, Yong Woo ,  LEE, Jin Woong ,  LIM, Hyoung Jin

IPC: H01L33/22 ,  H01L33/20

CPC classification number: H01L33/22 ,  H01L33/20

Abstract: Disclosed herein is a light emitting diode chip. The light emitting diode chip includes a substrate, and a semiconductor stack, which is formed on the substrate and includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, the semiconductor stack having first side surface and second side surface disposed under the first side surface, wherein the first side surface is an outer side surface of the semiconductor stack to mesa-etching, the second side surface is an outer side surface of the first conductive type semiconductor layer, and at least one of the first side surface and second side surface has a convex pattern. Accordingly, the light emitting diode chip of the present invention can improve lateral light extraction by the convex pattern.

Abstract translation: 这里公开了一种发光二极管芯片。 发光二极管芯片包括形成在基板上并包括第一导电类型半导体层，有源层和第二导电类型半导体层的基板和半导体堆叠，所述半导体堆叠具有第一侧表面和第二侧 表面设置在第一侧表面下方，其中第一侧表面是半导体叠层的外侧表面以进行台面蚀刻，第二侧表面是第一导电类型半导体层的外侧表面，并且至少一个 第一侧表面和第二侧表面具有凸形图案。 因此，本发明的发光二极管芯片可以通过凸形图案改善横向光提取。

公开(公告)号：WO2014193109A1

公开(公告)日：2014-12-04

申请号：PCT/KR2014/004496

申请日：2014-05-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： OH, Se Hee ,  YOON, Yeo Jin ,  KIM, Jong Kyu

IPC: H01L33/36 ,  H01L33/20

CPC classification number: H01L33/20 ,  H01L27/153 ,  H01L33/0095 ,  H01L33/62

Abstract: Disclosed is a light emitting diode including a plurality of light emitting elements and a method of fabricating the same. The light emitting diode includes: a substrate; a plurality of light emitting elements disposed on the substrate; interconnection lines connecting the light emitting elements to each other, wherein the plurality of light emitting elements comprise outer light emitting elements aligned along an edge of the substrate, each of the outer light emitting elements comprises an inner face directed towards an adjacent light emitting element and an outer face disposed adjacent the edge of the substrate and directed towards an outside of the substrate, and the inner face of at least one of the outer light emitting elements comprises a more gently slanted side surface than the outer face thereof.

Abstract translation: 公开了一种包括多个发光元件的发光二极管及其制造方法。 发光二极管包括：基板; 设置在所述基板上的多个发光元件; 将所述发光元件彼此连接的互连线，其中所述多个发光元件包括沿着所述衬底的边缘排列的外部发光元件，所述外部发光元件中的每一个包括指向相邻发光元件的内表面， 设置在基板的边缘附近并指向基板的外侧的外表面，并且外部发光元件中的至少一个的内表面包括比其外表面更缓和地倾斜的侧表面。

公开(公告)号：WO2014126437A1

公开(公告)日：2014-08-21

申请号：PCT/KR2014/001279

申请日：2014-02-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： SUH, Duk Il ,  KIM, Kyoung Wan ,  YOON, Yeo Jin ,  WOO, Sang Won ,  KIM, Shin Hyoung

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/387 ,  H01L27/15 ,  H01L29/861 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A light emitting diode chip and a light emitting diode package including the same. The light emitting diode chip includes a substrate, a light emitting diode section disposed on the substrate, an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section. In the light emitting diode chip, the light emitting diode section is disposed together with the inverse parallel diode section.

Abstract translation: 发光二极管芯片和包括该发光二极管芯片的发光二极管封装。 发光二极管芯片包括衬底，设置在衬底上的发光二极管部分，设置在衬底上并且与发光二极管部分反向并联连接的反并联二极管部分。 在发光二极管芯片中，发光二极管部分与逆并联二极管部分一起设置。

公开(公告)号：WO2014104796A1

公开(公告)日：2014-07-03

申请号：PCT/KR2013/012277

申请日：2013-12-27

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： LEE, Chung Hoon ,  YE, Kyung Hee ,  CHO, Dae Sung ,  KIM, Jong Rack ,  SON, Young Hwan ,  LEE, Seong Min ,  YI, Jae Seon ,  PARK, Jeong Yeol ,  KOO, Jong Hyeon

IPC: D06F39/00 ,  A61L2/10

CPC classification number: A61L9/00 ,  A61L2/00 ,  D06F35/005

Abstract: Provided is a washing machine using a UV LED, which can sterilize and deodorize the interior without dissembling the washing machine. The washing machine includes: a drum; a rotational shaft coupled to a rear surface of the drum; a tub compassing the drum; and a UV light-emitting unit disposed on a rear surface of the tub in a bar type and configured to sterilize and deodorize the rear surface of the drum and a periphery of the rotational shaft.

Abstract translation: 提供一种使用UV LED的洗衣机，其可以在不拆卸洗衣机的情况下对内部进行消毒和除臭。 洗衣机包括：鼓; 耦合到所述滚筒的后表面的旋转轴; 一个圆筒滚筒; 以及紫外线发光单元，其设置在所述桶的后表面上，并且被配置为对所述滚筒的后表面和所述旋转轴的周边进行灭菌和除臭。

公开(公告)号：WO2014098510A1

公开(公告)日：2014-06-26

申请号：PCT/KR2013/011914

申请日：2013-12-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： LEE, Seom Guen ,  KIM, Jong Kyu ,  YOON, Yeo Jin ,  KIM, Jae Kwon ,  KIM, Mae Yi

IPC: H01L33/36

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other.

Abstract translation: 本发明的示例性实施例提供一种发光二极管，其包括第一发光单元和布置在基板上并彼此间隔开的第二发光单元，第一透明电极层，设置在第一发光单元上并电连接到 第一发光单元，设置在第一发光单元的一部分和第一透明电极层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在第一发光单元之间的绝缘层 互连和第一发光单元的侧表面。 电流阻挡层和绝缘层彼此连接。

公开(公告)号：WO2014061940A1

公开(公告)日：2014-04-24

申请号：PCT/KR2013/009055

申请日：2013-10-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： HEO, Jeong Hun ,  YOON, Yeo Jin ,  CHOI, Joo Won ,  LEE, Joon Hee ,  KIM, Chang Yeon ,  LEE, Su Young

IPC: H01L33/44

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.

Abstract translation: 本发明的示例性实施例公开了一种半导体器件及其制造方法。 半导体器件包括氮化镓衬底，设置在氮化镓衬底上的多个半导体堆叠以及设置在氮化镓衬底和多个半导体堆叠之间的绝缘图案，绝缘图案使半导体堆叠与氮化镓衬底绝缘 。

公开(公告)号：WO2014003402A1

公开(公告)日：2014-01-03

申请号：PCT/KR2013/005576

申请日：2013-06-25

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： HAN, Chang Suk ,  KIM, Hwa Mok ,  CHOI, Hyo Shik ,  KO, Mi So ,  LEE, A Ram Cha ,  HWANG, Jung Hwan

IPC: H01L33/04 ,  H01L33/06

CPC classification number: H01L33/04 ,  H01L33/06 ,  H01L33/32

Abstract: A near ultraviolet light emitting device is disclosed. The light emitting device includes an n-type contact layer including a gallium nitride layer, a p-type contact layer including a gallium nitride layer, and an active region of a multiple quantum well structure disposed between the n-type contact layer and the p-type contact layer, wherein the active region emits near ultraviolet light in a wavelength range from 360 nm to 390 nm.

Abstract translation: 公开了近紫外光发射装置。 发光器件包括包括氮化镓层的n型接触层，包括氮化镓层的p型接触层和设置在n型接触层和p型之间的多量子阱结构的有源区 型接触层，其中有源区在360nm至390nm的波长范围内发射近紫外光。

公开(公告)号：US11183620B2

公开(公告)日：2021-11-23

申请号：US16424178

申请日：2019-05-28

Applicant: SEOUL VIOSYS CO., LTD. ,  SEOUL VIOSYS CO., LTD.

Inventor： Se Hee Oh ,  Hyun A Kim ,  Jong Kyu Kim ,  Jong Hyeon Chae

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/10 ,  H01L33/64 ,  H01L33/44 ,  H01L33/08 ,  H01L33/38 ,  H01L33/40 ,  H01L33/60 ,  F21S41/141 ,  F21Y115/10

Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.