公开(公告)号：KR1020090016152A

公开(公告)日：2009-02-13

申请号：KR1020070080598

申请日：2007-08-10

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  이창수 ,  이명재 ,  전찬봉 ,  박영수

IPC: H01L27/108 ,  H01L27/115

CPC classification number: H01L27/2409 ,  G11C13/0004 ,  H01L27/10847 ,  H01L27/2436

Abstract: A method for forming a nickel oxide layer and a method for manufacturing a resistive memory device including the nickel oxide layer are provided to obtain the nickel oxide layer with uniform oxidation state by using CVD or ALD(Atomic Layer Deposition) process. A nickel oxide layer is formed by using a CVD(Chemical Vapor Deposition) method. The source gas including a precursor of Ni is supplied to a reaction chamber(100) on which a substrate is loaded. The reaction gas including oxygen is supplied to the chamber. The precursor of the Ni is the anoxic precursor. The precursor of the Ni in the substrate(120) reacts to the reaction gas(30). The reaction gas decomposes the Ni(EtCp)2 into Ni and (EtCp)2. The (EtCp)2 is volatilized and the Ni is oxidized and is adhered to the upper surface of the substrate. A nickel oxide layer(200) is formed on the substrate. The precursor of the Ni is Ni(EtCp)2. The O2 gas is used as the reaction gas. The temperature of the substrate is 250 to 400 degrees centigrade when forming the nickel oxide layer.

Abstract translation: 提供了一种形成氧化镍层的方法和一种制造包括该氧化镍层的电阻式存储器件的方法，以通过使用CVD或ALD（原子层沉积）工艺获得具有均匀氧化态的氧化镍层。 通过使用CVD（化学气相沉积）法形成氧化镍层。 将包含Ni的前体的源气体供给到其上装载有基板的反应室（100）。 包括氧的反应气体被供应到室。 Ni的前体是缺氧前体。 衬底（120）中的Ni的前体与反应气体（30）反应。 反应气体将Ni（EtCp）2分解成Ni和（EtCp）2。 （EtCp）2挥发，Ni被氧化并附着在基板的上表面。 在基板上形成氧化镍层（200）。 Ni的前体是Ni（EtCp）2。 使用O 2气体作为反应气体。 当形成氧化镍层时，基板的温度为250〜400摄氏度。

公开(公告)号：KR1020080070333A

公开(公告)日：2008-07-30

申请号：KR1020070008282

申请日：2007-01-26

Applicant: 삼성전자주식회사

Inventor： 김은아 ,  이정현 ,  알렉산드라아프아나세바 ,  알렉시포민 ,  세르게이베자트프

IPC: H04L12/28

Abstract: A method for electing a cluster head in a sensor network, and a sensor node construction system in the sensor network are provided to improve the security level by electing an extra cluster head and verifying a member list of the extra cluster head by the nodes existing at the same cluster. The entire nodes included in a sensor network constructs a cluster by determining a temporary cluster head(S201). The temporary cluster head broadcasts the cluster member list to the nodes included in the same cluster(S202). Each of the nodes verify the cluster member list and the temporary cluster head(S203). Each node determines the cluster head by using the cluster member list and a random number received by each node from the base station.

Abstract translation: 提供了一种用于选择传感器网络中的簇头的方法和传感器网络中的传感器节点构造系统，以通过选择额外的簇头来提高安全级别，并通过存在于 同一个集群。 包含在传感器网络中的整个节点通过确定一个临时簇头来构建一个簇（S201）。 临时集群头将集群成员列表广播到包含在同一集群中的节点（S202）。 每个节点验证集群成员列表和临时集群头（S203）。 每个节点通过使用群集成员列表和每个节点从基站接收到的随机数来确定簇头。

公开(公告)号：KR1020080068477A

公开(公告)日：2008-07-23

申请号：KR1020070006311

申请日：2007-01-19

Applicant: 삼성전자주식회사

Inventor： 장혜온 ,  이정현 ,  조잉섭 ,  신범석

IPC: H04N9/64

CPC classification number: H04N9/643 ,  G09G5/06 ,  G09G2340/06 ,  H04N9/646

Abstract: A method and an apparatus for correcting color are provided to select a reference color, a base of color correction, according to the color of an input image, and correct the color of the input image by moving the color of the input image on a color wheel towards the selected reference color, thereby providing an image with clear color. A method for correcting color comprises the following steps of: receiving an RGB(Red, Green, Blue) image(S500); performing the RGB-HSV(Hue, Saturation, Value) converting of the received RGB image(S510); acquiring color correction information including a reference color(S520); correcting color to generate correction color(S530); and correcting the correction color again to generate a correction skin color(S540) and performing the RGB-HSV converting of the generated correction skin color to output an image(S550).

Abstract translation: 提供了一种用于校正颜色的方法和装置，以根据输入图像的颜色选择参考颜色，颜色校正的基础，并且通过将输入图像的颜色移动到颜色上来校正输入图像的颜色 转向所选择的参考颜色，从而提供具有清晰颜色的图像。 一种校正颜色的方法包括以下步骤：接收RGB（红，绿，蓝）图像（S500）; 执行接收的RGB图像的RGB-HSV（色调，饱和度，值）转换（S510）; 获取包括参考颜色的颜色校正信息（S520）; 校正颜色以产生校正颜色（S530）; 并再次校正校正颜色以产生校正肤色（S540），并且对生成的校正肤色执行RGB-HSV转换以输出图像（S550）。

公开(公告)号：KR1020080068476A

公开(公告)日：2008-07-23

申请号：KR1020070006310

申请日：2007-01-19

Applicant: 삼성전자주식회사

Inventor： 장혜온 ,  이정현 ,  조잉섭 ,  신범석

IPC: H04N9/64

CPC classification number: H04N9/643 ,  G09G5/06 ,  G09G2340/06 ,  H04N9/646

Abstract: A method and an apparatus for correcting saturation are provided to detect external brightness, calculate the saturation of an input image, and modify the calculated saturation when the detected brightness is higher than predetermined brightness, thereby providing a clear image to a user even in bright surroundings. A method for correcting saturation comprises the following steps of: detecting the external brightness of a saturation correcting apparatus(S500); calculating the saturation of an input image(S510); and modifying the calculated saturation when the detected brightness of the saturation correcting apparatus is higher than predetermined brightness(S520).

Abstract translation: 提供了一种用于校正饱和度的方法和装置，用于检测外部亮度，计算输入图像的饱和度，并且当检测到的亮度高于预定亮度时修改计算出的饱和度，从而即使在明亮的环境中也向用户提供清晰的图像 。 一种校正饱和度的方法包括以下步骤：检测饱和校正装置的外部亮度（S500）; 计算输入图像的饱和度（S510）; 以及当所述饱和度校正装置的检测亮度高于预定亮度时修改所计算的饱和度（S520）。

公开(公告)号：KR1020080066474A

公开(公告)日：2008-07-16

申请号：KR1020070003964

申请日：2007-01-12

Applicant: 삼성전자주식회사

Inventor： 최상준 ,  이정현 ,  배형진 ,  이창수

IPC: G11C11/15 ,  H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  G11C13/0004

Abstract: A resistive random access memory device and a method for manufacturing the same are provided to have a variable resistance layer with narrow voltage dispersion causing resistance variation and with good reproducibility. According to a resistive random access memory device including a switching device and a storage node(S) connected to the switching device, the storage node includes a first electrode(10), a second electrode(30) and a variable resistance layer(20). The variable resistance layer is formed with Cu(2-x)O between the first electrode and the second electrode. In Cu(2-x)O, x is equal to or larger than zero and is equal to or smaller than 0.5. At least one of the first electrode and the second electrode is one selected from a group comprising TiN layer, TaN layer, Pt layer, Al layer and Ru layer.

Abstract translation: 提供了一种电阻随机存取存储器件及其制造方法，以具有导致电阻变化和良好再现性的具有窄电压分散的可变电阻层。 根据包括连接到开关装置的开关装置和存储节点（S）的电阻性随机存取存储装置，存储节点包括第一电极（10），第二电极（30）和可变电阻层（20） 。 可变电阻层在第一电极和第二电极之间由Cu（2-x）O形成。 在Cu（2-x）O中，x等于或大于零并且等于或小于0.5。 第一电极和第二电极中的至少一个选自包含TiN层，TaN层，Pt层，Al层和Ru层的组。

公开(公告)号：KR1020080058114A

公开(公告)日：2008-06-25

申请号：KR1020060132242

申请日：2006-12-21

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  정태철 ,  김은아 ,  알렉산드라아프아나셰바 ,  알렉시포민

IPC: H04L9/08 ,  H04L9/30 ,  H04L9/28 ,  H04L12/28

CPC classification number: H04L9/302 ,  H04L9/085 ,  H04L9/3249

Abstract: A distributed RSA signature method in an ad-hoc network and a node for generating signatures are provided to process a distributed signature function without interaction between nodes by utilizing an inherent characteristic of an MDS code. In a dealer node, key information is distributed to plural nodes using RSA(Rivest Shamir Adleman) parameters and an MDS(Maximum Distance Separable) code(S301). Partial signature is generated at the plural nodes using the distributed key information and then the generated partial signature is transmitted to a signature generation node(S302). An RSA signature is generated using the partial signature at the signature generation node(S303). The RSA signature is generated using the partial signature, which is received from nodes less than the number of the plural nodes.

Abstract translation: 提供了自组织网络中的分布式RSA签名方法和用于生成签名的节点，以通过利用MDS代码的固有特性来处理分布式签名功能而无需在节点之间进行交互。 在经销商节点中，使用RSA（Rivest Shamir Adleman）参数和MDS（最大距离可分离）代码（S301）将密钥信息分发到多个节点。 使用分布式密钥信息在多个节点处生成部分签名，然后将生成的部分签名发送到签名生成节点（S302）。 使用签名生成节点处的部分签名生成RSA签名（S303）。 使用部分签名生成RSA签名，所述部分签名从小于多个节点的节点的节点接收。

公开(公告)号：KR1020080026263A

公开(公告)日：2008-03-25

申请号：KR1020060090992

申请日：2006-09-20

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  정태철

IPC: H04L9/08 ,  H04L9/28 ,  H04L9/30

CPC classification number: H04L9/0891 ,  H04L9/085

Abstract: A key generation method for self-configuration is provided to enable existing nodes in a network to allocate node keys to new nodes, when the new nodes participate in the network. A predetermined reference number of existing nodes are selected from network nodes. A partial key request message is transmitted to the selected existing nodes. A node key is generated based on a random partial key which is received as a response to the partial key request message. The node key is generated by adding the reference number of random partial keys.

Abstract translation: 提供了一种用于自配置的密钥生成方法，以便当新节点参与网络时，使网络中的现有节点能够向新节点分配节点密钥。 从网络节点中选择预定的参考数量的现有节点。 部分密钥请求消息被发送到所选择的现有节点。 基于作为对部分密钥请求消息的响应而被接收的随机部分密钥生成节点密钥。 通过添加随机部分键的参考数来生成节点密钥。

公开(公告)号：KR100790894B1

公开(公告)日：2008-01-03

申请号：KR1020060113042

申请日：2006-11-15

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  배형진 ,  최상준

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/04 ,  H01L45/145 ,  B82Y10/00

Abstract: A resistive random memory device is provided to suppress an operation error caused by excessive diffusion of Cu ions or Ag ions. A resistive random memory device includes a storage node(S) connected to a switching element. The storage node includes a first electrode having a metal compound having a metal and an ion having two valences and less, a solid electrolyte layer(20) formed on the first electrode, and a second electrode formed on the solid electrolyte layer. The first electrode is formed with a nano-compound including the metal and the metal compound or a nano-compound having a stacked structure of the metal and the metal compound. The metal is one of Cu, Ag, Zn, and Li. The metal compound is a metal nitride.

Abstract translation: 提供电阻随机存储器件来抑制由Cu离子或Ag离子的过度扩散引起的操作误差。 电阻性随机存储器件包括连接到开关元件的存储节点（S）。 存储节点包括具有金属化合物和具有两个价数以下的离子的金属化合物的第一电极，形成在第一电极上的固体电解质层（20）和形成在固体电解质层上的第二电极。 第一电极由包含金属和金属化合物的纳米化合物或具有金属和金属化合物的堆叠结构的纳米化合物形成。 金属是Cu，Ag，Zn和Li之一。 金属化合物是金属氮化物。

公开(公告)号：KR1020080000356A

公开(公告)日：2008-01-02

申请号：KR1020060058095

申请日：2006-06-27

Applicant: 삼성전자주식회사

Inventor： 최상준 ,  이정현 ,  오훈상 ,  서범석

IPC: G11B5/74 ,  G11B5/84

CPC classification number: G11B5/82 ,  B82Y10/00 ,  G11B5/642 ,  G11B5/74 ,  G11B5/743 ,  G11B5/855

Abstract: A patterned magnetic recording medium and a manufacturing method thereof are provided to improve a manufacturing process favorably by using a nano wire and to control recording density thereof by controlling the size of the nano wire used. A patterned magnetic recording medium comprises a plate(10), a plurality of nano wires(15), and a magnetic layer(17). The nano wires are positioned on the plate vertically. The magnetic layer is formed on the nano wire and patterned with stepped parts by the nano wire. A buffering layer(11) is positioned between the plate and the nano wire. The buffering layer is patterned along a track, and the nano wire is formed along the patterned track. An upper end portion of the nano wire is flattened. A capping layer(19) is formed on the magnetic layer to protect the magnetic layer.

Abstract translation: 提供了图案化的磁记录介质及其制造方法，以通过使用纳米线有利地改进制造工艺，并通过控制所使用的纳米线的尺寸来控制其记录密度。 图案化的磁记录介质包括板（10），多个纳米线（15）和磁性层（17）。 纳米线垂直放置在板上。 磁性层形成在纳米线上，用纳米线用阶梯部分构图。 缓冲层（11）位于板和纳米线之间。 缓冲层沿着轨道被图案化，并且纳米线沿着图案化轨迹形成。 纳米线的上端部分变平。 在磁性层上形成覆盖层（19）以保护磁性层。

公开(公告)号：KR1020070076676A

公开(公告)日：2007-07-25

申请号：KR1020060005840

申请日：2006-01-19

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  이은홍 ,  최상준 ,  유인경 ,  이명재

IPC: H01L27/108

CPC classification number: G11C13/003 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/76

Abstract: A resistive RAM including a varistor and its operating method are provided to freely applying voltages having different polarity by using a bipolar resistance material as a data storage layer. An upper electrode line(46) intersects with a lower electrode line(40). A laminated structure is formed between the upper electrode line and a lower electrode line. The laminated structure is formed on the intersection part of the upper electrode line and the lower electrode line. The laminated structure includes a varistor(42) and a data storage layer(44). The varistor and the data storage layer are sequentially laminated on the lower electrode line. The varistor and the data storage layer are sequentially laminated on the upper electrode line. A floating electrode is formed between the varistor and the data storage layer.

Abstract translation: 通过使用双极性电阻材料作为数据存储层，提供包括变阻器及其操作方法的电阻式RAM以自由地施加具有不同极性的电压。 上电极线（46）与下电极线（40）相交。 在上电极线和下电极线之间形成层叠结构。 层叠结构形成在上部电极线和下部电极线的交叉部分上。 层压结构包括变阻器（42）和数据存储层（44）。 压敏电阻和数据存储层依次层叠在下电极线上。 压敏电阻和数据存储层依次层叠在上电极线上。 在压敏电阻和数据存储层之间形成浮动电极。