Abstract:
PURPOSE: A method for manufacturing a chalcogenide solar cell with a double texture structure having a texture layer, and the chalcogenide solar cell by the same are provided to increase efficiency by forming a concave-convex part and a front texture together. CONSTITUTION: A light absorption layer (40) of a chalcogenide semiconductor material is formed on a back electrode. A buffer layer (50) is formed on the light absorption layer. A transparent electrode is formed on the buffer layer. A front texture (62) is formed on the surface of the transparent electrode. The concavo-convex surface of the back electrode is formed by a texture layer (20).
Abstract:
PURPOSE: A method for manufacturing a chalcogenide solar cell with a double texture structure formed on the surface of a back electrode, and the chalcogenide solar cell manufactured by the same are provided to increase light capturing performance conversion efficiency, thereby improving photoelectric conversion efficiency. CONSTITUTION: A back electrode (30) is formed on the substrate. A light absorption layer (40) of a chalcogenide semiconductor material is formed on the back electrode. A buffer layer (50) is formed on the light absorption layer. A transparent electrode is formed on the buffer layer. A front texture (62) is formed on the surface of the transparent electrode.
Abstract:
PURPOSE: A method for preparing a CIGS-based thin film solar cell using a Na-free substrate and a solar cell prepared by the same are provided to improve the efficiency of the solar cell by forming a thin film solar cell module. CONSTITUTION: A molybdenum electrode is formed on a Na-free substrate (S1). An Na source thin film is formed on a part of the surface of the substrate including the molybdenum electrode (S2). A CIGS-based precursor thin film is formed on the substrate including the Na source thin film (S3). The Na of an Na source is diffused into the CIGS-based thin film (S4) by a thermal selenization process. [Reference numerals] (AA) Start; (BB) Form a molybdenum electrode on the surface of an Na-free substrate; (CC) S1 step; (DD) Form an Na source thin film on a part of the surface of the substrate including the molybdenum electrode; (EE) S2 step; (FF) Form a CIGS-based precursor thin film; (GG) S3 step; (HH) Diffuse Na of an Na source into the CIGS-based thin film through selenide heat treating; (II) S4 step; (JJ) End
Abstract:
PURPOSE: A silicon nanoparticle collection system and a nanoparticle collection/storage container used for the same are provided to supply nanoparticles to a deposition system which is collected and stored, after a nanoparticle container in which nanoparticles are collected is separated from an inlet system for collecting the nanoparticles inflowing with carrier gas into multiple nanoparticle containers which is connected to one inlet line. CONSTITUTION: A silicon nano particle collection system comprises an inlet line, multiple nanoparticle collection/storage containers(10), and a carrier gas discharge line. The inlet line flows nanoparticles and carrier gas in. The multiple nanoparticle collection/storage containers are connected to the inlet line. The carrier gas discharge line discharges the carrier gas which is flowing through the inlet line from the nanoparticle collection/storage containers. The nanoparticle collection/storage containers comprise a nano particle inlet unit(11), a filter screen(13), and a carrier gas discharge unit(14). The nanoparticle inlet unit is connected to the inlet line, and is installed on one side of the nanoparticle collection/storage containers. The filter screen is equipped in the nanoparticle collection/storage containers. The carrier gas discharge unit is installed in the nanoparticle collection/storage container to discharge the carrier gas which is passing through the filter screen, and is connected to the carrier gas discharge line.