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公开(公告)号：DE60137382D1
公开(公告)日：2009-03-05
申请号：DE60137382
申请日：2001-05-16
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART LUC , BARDOUILLET MICHEL
Abstract: A device for generating an electromagnetic field by a first oscillating circuit excited by a high-frequency signal, including, at a distance from the first oscillating circuit, a second passive, unloaded and coreless oscillating circuit, forming an element for concentrating the magnetic flux intended to be intercepted by a transponder by a third oscillating circuit.
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公开(公告)号：DE60322818D1
公开(公告)日：2008-09-25
申请号：DE60322818
申请日：2003-10-16
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART SYLVIE , WUIDART LUC
Abstract: The memory cell (1) comprises at least one, in particular two branches (2,3) connected between two terminals (4,5) where the read voltage (Vr) is applied; each branch comprises two stages connected in series, that is a pre-read stage (6,7) each with two switchable resistors (Rg1,Rg2;Rg3,Rg4) connected in parallel, and a programming stage (8,9) containing a programmable resistor (Rp1,Rp2) of polycrystalline silicon, where the programmable resistors terminals (14,15) are accessible to a proper programming circuit to implement an irreversible decrease of each programmable resistance. The decrease (delta)Rp of the value of the programmable resistance (Rp1,Rp2) is predetermined and chosen to be greater than the difference (delta)Rg between two resistances (Rg1,Rg2;Rg3,Rg4) in the pair of each pre-read stage (6,7). The memory cell also comprises interrupters (K10,K11) for isolating the pre-read stages (6,7) from the programming stages (8,9). The programming stages comprise switches (K14,K15) for aplying the programming voltage (Vp) which is higher than the read voltage (Vr) to the terminals of the programmable resistors (Rp1,Rp2). The reading of the cell state is effected in two successive steps in the course of which the switchable resistors (Rg1,Rg2,Rg3,Rg4) of the pre-read stages are alternatingly selected. Each programmable resistor (Rp1,Rp2) is connected to the lower supply voltage terminal, in particular the ground (5) by a transistor (MN1,MN2) connected as a bistable with the transistor of the other branch. The switchable resistors (Rg1,Rg2;Rg3,Rg4) of the two branches (2,3) are simultaneously controlled so that the values of the selected resistances in each branch are inverted. The irreversible decrease (delta) Rp of the programmable resistances is greater than the difference (E) of the nominal values of the programmable resistances in the non-programmed state. In a variant of the memory cell, the terminal of the programmable resistor is the read terminal which is connectable to the first input of an amplifier whose second input is connected to a reference potential which is chosen at a level intermediate between the voltage levels at the read terminal in the two read phases when the programmable resistance is in the non-programmed state. A method (claimed) for reading the memory cell (claimed) consists in effecting two successive read steps in the course of which the switchable resistances of the pre-read stage are selected.
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公开(公告)号：DE60321770D1
公开(公告)日：2008-08-07
申请号：DE60321770
申请日：2003-02-11
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART LUC , BARDOUILLET MICHEL
IPC: G06K19/07 , G06K19/067 , G06K19/077 , G11C11/56 , G11C17/14 , H04B1/59 , H04B5/02
Abstract: An electromagnetic transponder including: a parallel oscillating circuit adapted to extracting a supply signal from a radiated field; in parallel with the oscillating circuit, several branches each including a programmable resistor and a switch; and a cyclic control element for successively turning on the switches, each resistor forming an element for storing a portion of the code stored in the transponder.
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公开(公告)号：DE60036319T2
公开(公告)日：2008-06-05
申请号：DE60036319
申请日：2000-04-06
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART LUC , BARDOUILLET MICHEL , ENGUENT JEAN-PIERRE
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公开(公告)号：DE60315399T2
公开(公告)日：2008-05-08
申请号：DE60315399
申请日：2003-10-16
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART LUC
Abstract: The monotonic counter is implemented as an integrated circuit where each counting bit (B1,B2,B3,B4) is provided by a memory cell (11) containing at least one memory element constituted of a resistor of polycrystalline silicon which is programmable by an irreversible decrease of its resistance. The counter also comprises a circuit (30) for decoding the states of memory cells for obtaining the resultant count. The programming of the resistor of polycrystalline silicon is by a temporary passage of a constraint current which is higher than a current for which the resistance has the maximum value. Each counting cell comprises a programming resistor connected between a first supply terminal and a differential read terminal, and at least one programming interrupter connecting the read terminal to a second supply terminal. The programming resistor is in the form of two resistors of polycrystalline silicon which are identical in size and doping level. The counter also comprises a circuit for programming control (CTRL) of each counting cell and for providing control signals to each programming interrupter. The four bits (B1,B2,B3,B4) are arranged in a line of cells (11) which are all read simultaneously for obtaining the outputs (S1,S2,S3,S4). The number of cells in the state 0 and the state 1 is detected by the decoding circuit (30) which has five counting outputs (C0,C1,C2,C3,C4) linked to the four inputs by a NAND gate (31), nine AND gates (32,33,34,35,36,37,38,39,40), two OR gates (41,42), and a NOR gate (43).
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Patent Agency Ranking
公开(公告)号：DE60220975T2
公开(公告)日：2008-03-13
申请号：DE60220975
申请日：2002-09-03
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART SYLVIE , WUIDART LUC , BARDOUILLET MICHEL , BALLTHAZAR PIERRE
IPC: G01K7/00 , G06K19/073 , G06F12/14 , G06F13/42 , G06F21/06 , H01L21/822 , H01L27/04
Abstract: Method for detection of variations of an evironmental parameter (V,T) in an integrated circuit (1): (a) evaluate a propagation delay for retarding parts (21) sensitive to variations parameters environment, and; compare the delay current with respect to a reference value (REF). The measured delay current is compared to two predetermined minimum and maximum levels or a unique reference value defining a authorized operating range for the integrated circuit. The value from programmable retarder is determined as a function of the difference between the current value and reference value. The range of possible variation being predetermined.
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公开(公告)号：DE60223703D1
公开(公告)日：2008-01-03
申请号：DE60223703
申请日：2002-09-10
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART LUC , BALTHAZAR PIERRE
Abstract: The invention relates to a method of supplying a private quantity (s) in an integrated circuit involved in an authentication procedure by means of an external device that takes said private quantity into account. In order to verify the integrity of said memory element, the private quantity is a function of a signature (SIGN) of at least one memory element (4, 10, 11, 12) associated with the integrated circuit.
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公开(公告)号：DE60032049T2
公开(公告)日：2007-06-21
申请号：DE60032049
申请日：2000-04-06
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART LUC
Abstract: The distance between a smart card and terminal is measured by a circuit that compares the level of rectified (D) voltage in transponder when its receiver circuit (L2,C'2) is set to resonate at the terminal frequency with the rectified voltage when a capacitor (C3) is switched (K1) into the circuit to shift the transponder resonant frequency away from the excitation frequency.
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公开(公告)号：DE60033882D1
公开(公告)日：2007-04-26
申请号：DE60033882
申请日：2000-04-06
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART LUC , BARDOUILLET MICHEL , ENGUENT JEAN-PIERRE
Abstract: The terminal (1) uses inductive coupling to read from and write to a transponder, and includes a resonant circuit (Li,Ci) tuned to receive an AC HF excitation voltage. The resonant frequency may be altered so as to detune the LC in the event that a transponder is very close to the terminal. A capacitor (24) may be controlled by a control circuit (21) and with impedance (Li) to detect a gap of phase in relation to the signal of REF reference and to modify the capacity Ci of the capacitor (24). An Independent claim is included for a contactless system of data transmission.
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公开(公告)号：DE69920583T2
公开(公告)日：2006-02-23
申请号：DE69920583
申请日：1999-06-18
Applicant: ST MICROELECTRONICS SA
Inventor： WUIDART LUC , BARDOUILLET MICHEL
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