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公开(公告)号：US10433493B2
公开(公告)日：2019-10-08
申请号：US15711291
申请日：2017-09-21
Applicant: Sensor Electronic Technology, Inc.
Inventor： Arthur Peter Barber, III , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur
IPC: A01G7/04 , G01J1/16 , G01J1/24 , G01J1/20 , G01J1/02 , G01J1/10 , G01J1/42 , G01J1/26 , A01G9/20 , A23B7/015 , A23L3/28 , G01N21/64 , H05B37/02 , H05B33/08
Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.
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公开(公告)号：US20190207059A1
公开(公告)日：2019-07-04
申请号：US16299362
申请日：2019-03-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
CPC classification number: H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/382 , H01L2224/14 , H01S5/0224 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
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公开(公告)号：US10301195B2
公开(公告)日：2019-05-28
申请号：US16154623
申请日：2018-10-08
Applicant: Sensor Electronic Technology, Inc.
Inventor： Saulius Smetona , Timothy James Bettles , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: C02F1/32
Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure can include a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.
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公开(公告)号：US10243100B2
公开(公告)日：2019-03-26
申请号：US15687606
申请日：2017-08-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
IPC: H01L33/06 , H01L33/00 , H01L33/18 , H01L33/38 , H01S5/022 , H01L33/30 , H01S5/343 , H01S5/32 , H01S5/34
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
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公开(公告)号：US20190027650A1
公开(公告)日：2019-01-24
申请号：US16143015
申请日：2018-09-26
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur , Alexander Dobrinsky
CPC classification number: H01L33/24 , H01L33/06 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L2933/0091
Abstract: An opto-electronic device with two-dimensional injection layers is described. The device can include a semiconductor structure with a semiconductor layer having one of an n-type semiconductor layer or a p-type semiconductor layer, and a light generating structure formed on the semiconductor layer. A set of tilted semiconductor heterostructures is formed over the semiconductor structure. Each tilted semiconductor heterostructure includes a core region, a set of shell regions adjoining a sidewall of the core region, and a pair of two-dimensional carrier accumulation (2DCA) layers. Each 2DCA layer is formed at a heterointerface between one of the sidewalls of the core region and one of the shell regions. The sidewalls of the core region, the shell regions, and the 2DCA layers each having a sloping surface, wherein each 2DCA layer forms an angle with a surface of the semiconductor structure.
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Patent Agency Ranking
公开(公告)号：US10177534B2
公开(公告)日：2019-01-08
申请号：US15139813
申请日：2016-04-27
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Michael Shur , Alexander Dobrinsky
Abstract: A device is provided in which a light emitting semiconductor structure is excited by an electron beam that impacts a region of a lateral surface of the light emitting semiconductor structure at an angle to the normal of the lateral surface that is non-zero. The non-zero angle can be configured to cause excitation in a desired region of the light emitting semiconductor structure. The device can include wave guiding layer(s) and/or other features to improve the light generation and/or operation of the device.
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公开(公告)号：US10172968B2
公开(公告)日：2019-01-08
申请号：US15670750
申请日：2017-08-07
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Maxim S. Shatalov , Timothy James Bettles , Yuri Bilenko , Saulius Smetona , Alexander Dobrinsky , Remigijus Gaska
Abstract: Ultraviolet radiation is directed within a storage area formed of a plurality of layers including an outer ultraviolet reflective layer, an inner ultraviolet transparent layer, and a layer located between the outer ultraviolet reflective layer and the inner ultraviolet transparent layer. The refractive index of the layer between the outer ultraviolet reflective layer and the inner ultraviolet transparent layer is less than the refractive index of the inner ultraviolet transparent layer. A set of ultraviolet radiation sources generate ultraviolet radiation directed at a set of items located within the storage area.
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公开(公告)号：US10158044B2
公开(公告)日：2018-12-18
申请号：US15391922
申请日：2016-12-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Rakesh Jain , Wenhong Sun , Jinwei Yang , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Michael Shur
IPC: H01L31/072 , H01L33/32 , H01L33/00 , H01L33/12 , H01L33/06 , H01L21/02 , H01L29/15 , H01L33/02 , H01L33/04 , H01L33/20
Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.
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公开(公告)号：US10153396B2
公开(公告)日：2018-12-11
申请号：US15857853
申请日：2017-12-29
Applicant: Sensor Electronic Technology, Inc.
Inventor： Rakesh Jain , Wenhong Sun , Jinwei Yang , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: H01L27/15 , H01L31/0336 , H01L33/06 , H01L21/02 , H01L29/778 , H01L33/12 , H01L33/24 , H01L33/32 , H01L29/20 , H01L29/51 , H01L33/22
Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.
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公开(公告)号：US20180280555A1
公开(公告)日：2018-10-04
申请号：US15997611
申请日：2018-06-04
Applicant: Sensor Electronic Technology, Inc.
Inventor： Yuri Bilenko , Timothy James Bettles , Alexander Dobrinsky , Michael Shur
CPC classification number: A61L2/10 , A61B7/02 , A61L2/24 , A61L2202/24
Abstract: An ultraviolet illuminator for providing a cleaning treatment to a medical device is disclosed. The ultraviolet illuminator can include an ultraviolet cleaning treatment system that operates in conjunction with at least one ultraviolet radiation source and sensor to clean surfaces of a medical device for purposes of disinfection, sterilization, and/or sanitization. The ultraviolet illuminator is suitable for a wide variety of medical devices, instruments and equipment. Stethoscopes and medical instrument probes are illustrative examples of some devices that can be used with the ultraviolet illuminator.
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