公开(公告)号：US20140069185A1

公开(公告)日：2014-03-13

申请号：US13607352

申请日：2012-09-07

Applicant: Xiang Zheng Tu

Inventor： Xiang Zheng Tu

IPC: G01F1/688 ,  H01L35/34 ,  G01F1/692

CPC classification number: G01F1/692 ,  B81C1/00158 ,  B81C1/00246 ,  B81C1/00571 ,  B81C2201/0115 ,  B81C2201/0142 ,  G01F1/6845 ,  G01F1/688 ,  H01L21/3063 ,  H01L35/34

Abstract: A vacuum-cavity-insulated flow sensor and related fabrication method are described. The sensor comprises a porous silicon wall with numerous vacuum-pores which is created in a silicon substrate, a porous silicon membrane with numerous vacuum-pores which is surrounded and supported by the porous silicon wall, and a cavity with a vacuum-space which is disposed beneath the porous silicon membrane and surrounded by the porous silicon wall. The fabrication method includes porous silicon formation and silicon polishing in HF solution.

Abstract translation: 描述了真空腔绝缘流量传感器及相关的制造方法。 传感器包括具有许多真空孔的多孔硅壁，其形成于硅衬底中，多孔硅膜具有许多真空孔，该多孔硅膜被多孔硅壁包围和支撑，以及具有真空空间的空腔， 设置在多孔硅膜下方并被多孔硅壁包围。 制造方法包括HF溶液中的多孔硅形成和硅研磨。

公开(公告)号：US08564026B2

公开(公告)日：2013-10-22

申请号：US13248087

申请日：2011-09-29

Applicant: Franz-Peter Kalz

Inventor： Franz-Peter Kalz

IPC: G01N29/02

CPC classification number: B81C1/00801 ,  B23K2103/50 ,  B81C2201/0142 ,  B81C2201/0143

Abstract: In various embodiments, a chip may include a substrate; a coating, the coating covering the substrate at least partially and the coating being designed for being stripped at least partially by means of laser ablation; wherein between the substrate and the coating, a laser detector layer is arranged at least partially, the laser detector layer being designed for generating a detector signal for ending the laser ablation.

Abstract translation: 在各种实施例中，芯片可以包括衬底; 涂层，所述涂层至少部分地覆盖所述基底，并且所述涂层被设计为至少部分地通过激光烧蚀剥离; 其中在所述基底和所述涂层之间，至少部分地布置有激光检测器层，所述激光检测器层被设计为产生用于结束所述激光烧蚀的检测器信号。

公开(公告)号：US20110028351A1

公开(公告)日：2011-02-03

申请号：US12812974

申请日：2009-01-21

Applicant: Thomas D. Perroud ,  Kamlesh D. Patel

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel

IPC: C40B50/18 ,  G01N33/543

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of immobilizing a particle which comprise focusing the flow of a sample fluid containing the particle into a virtual channel which flows towards an unoccupied hydrodynamic trap in a microfluidic channel such that the particle flows into the hydrodynamic trap and becomes immobilized therein. Also disclosed are microfluidic devices which comprise at least one microchannel having at least one hydrodynamic trap, at least one focusing fluid inlet, said focusing fluid inlet is upstream of the hydrodynamic trap such that a focusing fluid introduced therein results in a virtual channel of a sample fluid when present which preferentially flows toward the hydrodynamic trap.

Abstract translation: 本文公开了固定颗粒的方法，其包括将含有颗粒的样品流体的流动聚焦到虚拟通道中，该虚拟通道朝向微流体通道中的未占据的流体动力阱捕获，使得颗粒流入流体动力阱并固定在其中。 还公开了微流体装置，其包括具有至少一个流体动力捕集器，至少一个聚焦流体入口的至少一个微通道，所述聚焦流体入口在流体动力捕集器的上游，使得其中引入的聚焦流体导致样品的虚拟通道 存在时优先流向流体动力阱的流体。

公开(公告)号：US20110024368A1

公开(公告)日：2011-02-03

申请号：US12812986

申请日：2009-01-21

Applicant: Thomas D. Perroud ,  Kamlesh D. Patel ,  Robert J. Meagher

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel ,  Robert J. Meagher

IPC: B81B1/00 ,  C23F1/02 ,  B29C41/20 ,  F15D1/00

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2× a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.

Abstract translation: 本文公开的方法是在衬底中的两个各向同性湿蚀刻特征之间制造所需高度和/或宽度的微孔的方法，其包括使用蚀刻剂和小于2×一组的掩模距离的单层各向同性湿蚀刻两个特征 蚀刻深度。 本文还公开了使用包括微孔的微孔和微流体装置的方法。

公开(公告)号：US07643100B2

公开(公告)日：2010-01-05

申请号：US11927725

申请日：2007-10-30

Applicant: Shin-Ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

Inventor： Shin-Ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC: G02F1/136 ,  G02F1/1335 ,  H01L21/302 ,  H01L21/461 ,  B29D11/00

CPC classification number: G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

Abstract: In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

公开(公告)号：US07525732B2

公开(公告)日：2009-04-28

申请号：US11843677

申请日：2007-08-23

Applicant: Shin-ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

Inventor： Shin-ichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC: G02B5/08 ,  G02B3/00

CPC classification number: G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

Abstract: In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

Abstract translation: 在包含蚀刻控制部件的工件（30）中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口（36）的掩模（32,34）施加到工件上，工件为 用蚀刻溶液（38）蚀刻，从而在工件的表面形成对应于开口形状的凹部（40）。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。

公开(公告)号：US07524767B2

公开(公告)日：2009-04-28

申请号：US11239259

申请日：2005-09-29

Applicant: Dan W. Chilcott

Inventor： Dan W. Chilcott

IPC: H01L21/302

CPC classification number: B81C1/00531 ,  B81B2203/033 ,  B81C2201/0132 ,  B81C2201/0142

Abstract: A technique for manufacturing a micro-electro-mechanical (MEM) structure includes a number of steps. Initially, a substrate is provided. Next, a plurality of trenches are etched into the substrate with a first etch. Then, a charging layer is formed at a bottom of each of the trenches to form undercut trenches. Finally, a second etch is provided into the undercut trenches. The charging layer causes the second etch to laterally etch foots in the substrate between the undercut trenches. The footers undercut the substrate to release a portion of the substrate for providing a movable structure between the undercut trenches and above the footers.

Abstract translation: 微机电（MEM）结构的制造技术包括多个步骤。 首先，提供基板。 接下来，通过第一蚀刻将多个沟槽蚀刻到衬底中。 然后，在每个沟槽的底部形成充电层以形成底切沟槽。 最后，在底切沟槽中提供第二蚀刻。 充电层导致第二蚀刻在底切沟槽之间横向蚀刻衬底中的脚。 脚底底切基板以释放基板的一部分，以在底切沟槽和页脚之上提供可移动结构。

公开(公告)号：US07329611B2

公开(公告)日：2008-02-12

申请号：US10410254

申请日：2003-04-10

Applicant: Shinichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

Inventor： Shinichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC: H01L21/302 ,  B29D11/00

CPC classification number: G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

Abstract: In a formation method for forming a fine structure in a workpiece containing an etching control component, using an isotropic etching process, a mask having an opening is applied to the workpiece, and the workpiece is etched with an etching solution to thereby form a recess, corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

Abstract translation: 在包含蚀刻控制部件的工件中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口的掩模施加到工件上，用蚀刻溶液蚀刻工件，从而形成凹部， 对应于工件的表面中的开口的形状。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。

公开(公告)号：US20060065622A1

公开(公告)日：2006-03-30

申请号：US11083030

申请日：2005-03-17

Applicant: Philip Floyd ,  William Cummings

Inventor： Philip Floyd ,  William Cummings

IPC: C23F1/00 ,  C03C25/68 ,  B44C1/22 ,  H01L21/306

CPC classification number: H01L21/3065 ,  B81B2201/047 ,  B81C1/00531 ,  B81C2201/0142 ,  B81C2201/056 ,  G02B26/001 ,  H01L21/32135 ,  H01L21/67069

Abstract: Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.

Abstract translation: 本文提供了一种用于制造MEMS装置的装置和方法。 所公开的装置的一个方面提供了一种包括暴露于固态蚀刻剂的可蚀刻材料的衬底，其中衬底和固态蚀刻剂设置在蚀刻室中。 在一些实施例中，固态蚀刻剂移动到靠近基板的位置。 在其它实施例中，可配置的分隔件在基板之间并且打开固态蚀刻剂。 固态蚀刻剂形成适于蚀刻可蚀刻材料的气相蚀刻剂。 在一些优选的实施方案中，固态蚀刻剂是固体氙二氟化物。 该装置和方法有利地用于在光学调制器的制造中执行释放蚀刻。

公开(公告)号：US06747338B1

公开(公告)日：2004-06-08

申请号：US10306639

申请日：2002-11-27

Applicant: Thomas K. Nunan ,  David E. Grosjean ,  Denis M. O'Kane ,  James S. Sellars

Inventor： Thomas K. Nunan ,  David E. Grosjean ,  Denis M. O'Kane ,  James S. Sellars

IPC: H01L2358

CPC classification number: B81C1/00595 ,  B81C1/00698 ,  B81C2201/0109 ,  B81C2201/0142 ,  B81C2201/016 ,  B81C2201/019

Abstract: A method of manufacturing MEMS structures and devices that allows the fabrication of dielectric structures with improved etch selectivity and good electrical leakage characteristics. The dielectric structure includes a composite stack of silicon nitride sub-layers with a silicon-rich nitride sub-layer and a stoichiometric silicon nitride sub-layer at opposite ends of the stack. Alternatively, the dielectric structure includes a single silicon nitride layer providing a graded change in silicon content through the dielectric layer, from silicon-rich nitride to stoichiometric silicon nitride.

Abstract translation: 制造MEMS结构和器件的方法，其允许制造具有改进的蚀刻选择性和良好漏电特性的电介质结构。 电介质结构包括在堆叠的相对端处具有富硅氮化物子层和化学计量氮化硅子层的氮化硅子层的复合叠层。 或者，电介质结构包括单个氮化硅层，其通过介电层提供硅含量的梯度变化，从富含硅的氮化物到化学计量的氮化硅。