公开(公告)号：US4063276A

公开(公告)日：1977-12-13

申请号：US735331

申请日：1976-10-26

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/45 ,  H01L27/14 ,  H01L29/161

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J29/451 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

Abstract translation: 半导体光电子发射器件包括两个或多个不同半导体的混合晶体，形成具有直接跃迁类型的异质结，该直接跃迁类型限定可被光电子激发的第一区域，以及限定禁带宽度大于第二区域的第二区域的间接跃迁类型 第一区域，其表面是光电子发射表面。

公开(公告)号：US4063269A

公开(公告)日：1977-12-13

申请号：US735332

申请日：1976-10-26

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/45 ,  H01L27/14 ,  H01L29/161

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J29/451 ,  H01J2201/3423

Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.

公开(公告)号：US4053920A

公开(公告)日：1977-10-11

申请号：US753158

申请日：1976-12-21

Applicant: Ronald E. Enstrom

Inventor： Ronald E. Enstrom

IPC: H01J1/34 ,  H01L27/14

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A method is provided for making an improved photocathode wherein a step ged substrate links a semitransparent cathode made from one p-type III-V compound or complex to a different III-V compound in the form of a host crystal.

Abstract translation: 提供了一种制备改进的光电阴极的方法，其中阶梯分级衬底将由一种p型III-V族化合物或络合物制成的半透明阴极连接到主晶体形式的不同III-V化合物。

公开(公告)号：US3982261A

公开(公告)日：1976-09-21

申请号：US496487

申请日：1974-08-12

Applicant: George A. Antypas

Inventor： George A. Antypas

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01L21/208 ,  H01L29/205 ,  H01L31/11 ,  H01L33/00 ,  H01S5/323 ,  H01L31/00

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J31/501 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/205 ,  H01L31/11 ,  H01L33/0025 ,  H01S5/323 ,  H01J2201/3423 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/12

Abstract: An epitaxial layer of a quaternary III-V alloy of Ga, In, As, and P has its constituents proportioned for lattice matching to a substrate having a lattice constant falling within the range of 5.45 to 6.05 A. In addition, the constituents of the alloy are proportioned to provide a selected bandgap energy falling within the range of 2.23 to 0.35 electron volts; this corresponds to wavelengths of 0.55 to 3.5 microns. Near perfect lattice matched heterojunctions are provided between the epitaxial layer and the lattice matched substrate; these are useful for providing improved photocathodes and lasers, particularly in the infrared range of wavelengths between 0.8 and 2.0 microns.

Abstract translation: Ga，In，As和P的季III-V合金的外延层具有与晶格常数落在5.45〜6.05A范围内的基板的晶格匹配成比例的成分。另外， 合金成比例，以提供落在2.23至0.35电子伏范围内的选定带隙能; 这对应于0.55至3.5微米的波长。 在外延层和晶格匹配衬底之间提供近完全晶格匹配异质结; 这些对于提供改进的光电阴极和激光器是有用的，特别是在0.8和2.0微米之间的波长的红外范围内。

公开(公告)号：US3972770A

公开(公告)日：1976-08-03

申请号：US560916

申请日：1975-03-21

Applicant: William W. Stein

Inventor： William W. Stein

IPC: H01J1/32 ,  H01J1/34 ,  H01J9/12 ,  H01L21/306 ,  H01L21/20

CPC classification number: H01J9/12 ,  H01J1/32 ,  H01J1/34 ,  H01L21/30612 ,  H01J2201/3423

Abstract: Preferential etches for Gallium Arsenide and Gallium Aluminum Arsenide materials provide a novel single crystalline layer thin film of GaAs for use as a free standing transmission secondary electron emitter or as a photocathode layer on an intermediate epitaxial layer of GaAlAs. Etching of a central area of a substrate layer of GaAs provides an annular rim supporting structure for the epitaxial GaAlAs and GaAs layers. A particular composition of hydrogen peroxide and ammonium hydroxide preferentially etches GaAs while hydrochloric acid preferentially etches GaAlAs.

Abstract translation: 砷化镓和砷化镓铝材料的优选蚀刻提供了一种新颖的GaAs单晶层薄膜，用作独立传输二次电子发射体或GaAlAs中间外延层上的光电阴极层。 蚀刻GaAs衬底层的中心区域为外延GaAlAs和GaAs层提供了一个环形边缘支撑结构。 过氧化氢和氢氧化铵的特定组合物优先蚀刻GaAs，而盐酸优先蚀刻GaAlAs。

公开(公告)号：US3958143A

公开(公告)日：1976-05-18

申请号：US449292

申请日：1974-03-08

Applicant: Ronald L. Bell

Inventor： Ronald L. Bell

IPC: H01J1/34 ,  H01J39/06 ,  H01J31/26

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A long wavelength photoemitter, for example a III-V semiconductor, having a work function reduction activation layer thereon, with means for overcoming the energy barrier between the semiconductor conduction band edge and the vacuum comprising means for thermally energizing the photoexcited electrons in the conduction band from a lower energy level therein to a higher "metastable" energy level in which they may reside for a sufficient time such that the electrons can pass with high probability from the elevated energy level into the vacuum over the energy barrier. In one embodiment, promotion of electrons to this higher energy level in the conduction band results from proper selection of the semiconductor alloy with conduction band levels favoring such room temperature thermal excitation. In another embodiment, a Schottky barrier is formed between the semiconductor emitter surface and the activation layer, by means of which an internal electric field is applied to the cathode resulting in high effective electron temperature for energy level transfer analogous to the intervalley electron transfer process of the Gunn effect. In yet other embodiments, composite semiconductor bodies are fabricated in which one region may advantageously be designed for efficient absorption of long-wavelength photons, and another for efficient operation of the promotion mechanism, which together assure a high quantum efficiency. Other properties of the biased promotion layer may be used to minimize emission of electrons which have been excited by purely thermal means, thus providing a low dark current, usually considered to be incompatible with long-wavelength infrared response.

公开(公告)号：US3925698A

公开(公告)日：1975-12-09

申请号：US40604873

申请日：1973-10-12

Applicant: US ARMY

Inventor： STAHL HERBERT A

IPC: H01J1/34 ,  H01J1/14 ,  H01J19/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photoemissive cathode is provided consisting of colloidal semiconducting material on a base transparent to visible and/or infrared radiation. The semiconductor material may be a binary or ternary compound from the groups III-V or II-VI of the periodic table. The semiconducting colloids are formed by a simultaneous precipitation and doping process.

Abstract translation: 在可见光和/或红外辐射透明的基底上提供由胶体半导体材料组成的光发射阴极。 半导体材料可以是来自周期表的III-V族或II-VI族的二元或三元化合物。 半导体胶体通过同时沉淀和掺杂过程形成。

公开(公告)号：US3901745A

公开(公告)日：1975-08-26

申请号：US43813974

申请日：1974-01-30

Applicant: INT STANDARD ELECTRIC CORP

Inventor： PION MARTIN

IPC: H01J1/34 ,  H01J9/12 ,  H01L7/38

CPC classification number: H01J1/34 ,  H01J9/12 ,  H01J2201/3423 ,  Y10S148/051 ,  Y10S148/056 ,  Y10S148/072 ,  Y10S148/12 ,  Y10S148/135

Abstract: A gallium arsenide photocathode is formed from a substrate of gallium arsenide on which are grown a first thin gallium aluminum arsenide layer and a further thin active layer of gallium arsenide. A coating of wax is applied over the thin active GaAs layer and around the sides and peripheral edges of the structure. A central region of the GaAs substrate is then etched to expose the inner GaAlAs layer while leaving a supporting rim around the edges. The rim permits use of a thinner GaAlAs layer.

公开(公告)号：US3894332A

公开(公告)日：1975-07-15

申请号：US41863573

申请日：1973-11-23

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： NATHANSON HARVEY C ,  THOMAS RICHARD N ,  GULDBERG JENS

IPC: H01J1/32 ,  H01J9/12 ,  H01J9/34 ,  H01J31/48 ,  H01J31/49 ,  B01J17/00

CPC classification number: B82Y10/00 ,  H01J1/32 ,  H01J9/12 ,  H01J9/34 ,  H01J31/48 ,  H01J31/49 ,  H01J2201/3423 ,  Y10S257/917 ,  Y10S438/978

Abstract: A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted into vacuum when a planar-parallel positive anode is mounted in close proximity to the surface. The cathode is responsive to input radiation such as electrons or light directed onto the cathode in modifying the electron emission from the array of electron emitter projections. The method of manufacturing the cathode by providing a predetermined pattern or mosaic of islands of a material exhibiting a greater etch resistant property than the semiconductor material, on a wafer of a semiconductor material and then etching out between and beneath the islands to undercut to a point where the islands are supported by only a small whisker of the semiconductor material. Removal of the islands results in an electron emitter being exposed from beneath each island wherein carriers generated within the body portion and also carriers generated within the depletion regions of the tips deffuse to the electron emitter projections wherein establishment of a high electric field at the tips of the electron emitter projections results in electron emission primarily due to conduction band tunneling. The device provides about 106 emitting points of close proximity so as to effect photographic-like imaging.

Abstract translation: 一种固态辐射敏感场发射器阴极，其包括单晶半导体部件，该单晶半导体部件具有主体部分，其具有从针状或晶须状部件形式的一个表面以紧密间隔且非常尖锐的电子发射突起的均匀阵列。 当平面平行正极安装在表面附近时，电子发射成真空。 阴极响应于输入辐射，例如电子或指向阴极的光，以修改来自电子发射体投影阵列的电子发射。 通过在半导体材料的晶片上提供在半导体材料的晶片上提供具有比半导体材料更大的抗蚀刻性能的材料的岛的预定图案或镶嵌的制造阴极的方法，然后在岛之间和之下蚀刻以切割到点 其中岛仅由半导体材料的小晶须支撑。 去除岛导致电子发射体从每个岛下面暴露，其中在体部分内产生的载流子以及在尖端的耗尽区域内产生的载流子迁移到电子发射器突起，其中在尖端处建立高电场 电子发射器投影导致电子发射主要是由于导带隧穿。 该装置提供约106个发射点的紧密接近，以便实现照相式成像。

公开(公告)号：US3887936A

公开(公告)日：1975-06-03

申请号：US39849173

申请日：1973-09-18

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  RALPH JOHN ERNEST

IPC: H01J1/34 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L31/10 ,  H01L31/112 ,  H01L31/153 ,  H01L17/00

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1123 ,  H01L31/1126

Abstract: A solid state radiation sensitive device is described employing JFETs as the sensitive elements. Two terminal construction is achieved by using a common conductor to capacitively couple to the JFET gate and to one of the source and drain connections.

Abstract translation: 使用JFET作为敏感元件描述了固态辐射敏感器件。 通过使用公共导体电容耦合到JFET栅极和源极和漏极连接中的一个来实现两个端子结构。