公开(公告)号：US3902979A

公开(公告)日：1975-09-02

申请号：US48219374

申请日：1974-06-24

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： THOMAS RICHARD N

IPC: H01L27/00 ,  C30B25/02 ,  C30B33/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  C25F3/00

CPC classification number: H01L21/84 ,  C30B33/00 ,  H01L21/00 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/135 ,  Y10S148/15 ,  Y10T428/24959

Abstract: A structure consisting of a thin, mono-crystalline semiconductive layer on an insulating substrate, and a method of fabrication is detailed. The resultant thin semiconductor-oninsulator substrate is useful as a starting substrate in fabricating microelectronic devices.

Abstract translation: 详细说明了由绝缘基板上的薄的单晶半导体层构成的结构和制造方法。 所得的薄绝缘体半导体衬底在制造微电子器件时可用作起始衬底。

公开(公告)号：US3894332A

公开(公告)日：1975-07-15

申请号：US41863573

申请日：1973-11-23

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： NATHANSON HARVEY C ,  THOMAS RICHARD N ,  GULDBERG JENS

IPC: H01J1/32 ,  H01J9/12 ,  H01J9/34 ,  H01J31/48 ,  H01J31/49 ,  B01J17/00

CPC classification number: B82Y10/00 ,  H01J1/32 ,  H01J9/12 ,  H01J9/34 ,  H01J31/48 ,  H01J31/49 ,  H01J2201/3423 ,  Y10S257/917 ,  Y10S438/978

Abstract: A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted into vacuum when a planar-parallel positive anode is mounted in close proximity to the surface. The cathode is responsive to input radiation such as electrons or light directed onto the cathode in modifying the electron emission from the array of electron emitter projections. The method of manufacturing the cathode by providing a predetermined pattern or mosaic of islands of a material exhibiting a greater etch resistant property than the semiconductor material, on a wafer of a semiconductor material and then etching out between and beneath the islands to undercut to a point where the islands are supported by only a small whisker of the semiconductor material. Removal of the islands results in an electron emitter being exposed from beneath each island wherein carriers generated within the body portion and also carriers generated within the depletion regions of the tips deffuse to the electron emitter projections wherein establishment of a high electric field at the tips of the electron emitter projections results in electron emission primarily due to conduction band tunneling. The device provides about 106 emitting points of close proximity so as to effect photographic-like imaging.

Abstract translation: 一种固态辐射敏感场发射器阴极，其包括单晶半导体部件，该单晶半导体部件具有主体部分，其具有从针状或晶须状部件形式的一个表面以紧密间隔且非常尖锐的电子发射突起的均匀阵列。 当平面平行正极安装在表面附近时，电子发射成真空。 阴极响应于输入辐射，例如电子或指向阴极的光，以修改来自电子发射体投影阵列的电子发射。 通过在半导体材料的晶片上提供在半导体材料的晶片上提供具有比半导体材料更大的抗蚀刻性能的材料的岛的预定图案或镶嵌的制造阴极的方法，然后在岛之间和之下蚀刻以切割到点 其中岛仅由半导体材料的小晶须支撑。 去除岛导致电子发射体从每个岛下面暴露，其中在体部分内产生的载流子以及在尖端的耗尽区域内产生的载流子迁移到电子发射器突起，其中在尖端处建立高电场 电子发射器投影导致电子发射主要是由于导带隧穿。 该装置提供约106个发射点的紧密接近，以便实现照相式成像。

公开(公告)号：DE3134558A1

公开(公告)日：1982-06-16

申请号：DE3134558

申请日：1981-09-01

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： NATHANSON HARVEY C ,  KAO YU C ,  HOBGOOD HUDSON M ,  THOMAS RICHARD N

IPC: C30B13/06 ,  C30B33/02 ,  C30B13/00

公开(公告)号：CA970821A

公开(公告)日：1975-07-08

申请号：CA162501

申请日：1973-01-31

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： NATHANSON HARVEY C ,  THOMAS RICHARD N ,  GULDBERG JENS

IPC: H01J1/304 ,  H01J1/32 ,  H01J1/34 ,  H01J1/35 ,  H01J9/02 ,  H01J9/12 ,  H01J31/48 ,  H01J31/49

Abstract: A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted into vacuum when a planar-parallel positive anode is mounted in close proximity to the surface. The cathode is responsive to input radiation such as electrons or light directed onto the cathode in modifying the electron emission from the array of electron emitter projections. The method of manufacturing the cathode by providing a predetermined pattern or mosaic of islands of a material exhibiting a greater etch resistant property than the semiconductor material, on a wafer of a semiconductor material and then etching out between and beneath the islands to undercut to a point where the islands are supported by only a small whisker of the semiconductor material. Removal of the islands results in an electron emitter being exposed from beneath each island wherein carriers generated within the body portion and also carriers generated within the depletion regions of the tips diffuse to the electron emitter projections wherein establishment of a high electric field at the tips of the electron emitter projections results in electron emission primarily due to conduction band tunneling. The device provides about 106 emitting points of close proximity so as to effect photographic-like imaging.

公开(公告)号：CA1237641A

公开(公告)日：1988-06-07

申请号：CA443597

申请日：1983-12-19

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： THOMAS RICHARD N ,  HOBGOOD HUDSON M ,  SWARTZ JOHN C

IPC: C30B13/12 ,  C30B13/10 ,  C30B29/06 ,  C30B13/00

Abstract: 14 A two-step process for fabricating impurity doped float-zoned single crystal silicon boules which exhibit substantially controlled and uniform concentrations of the impurity is disclosed. This process, when applied to polycrystalline silicon rods in a controlled environment of oxygen results in the production of high purity float-zoned silicon crystals with substantially uniform oxygen concentrations of up to 32 ppma which are not currently attainable utilizing the conventional Czochralski silicon boule fabrication methods of the semiconductor industry.

公开(公告)号：CA1165469A

公开(公告)日：1984-04-10

申请号：CA383828

申请日：1981-08-13

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： NATHANSON HARVEY C ,  KAO YU C ,  HOBGOOD HUDSON M ,  THOMAS RICHARD N

IPC: C30B13/06 ,  C30B33/02 ,  H01L21/306 ,  H01L29/91

Abstract: 16 49,113 This invention provides for mounting a singlecrystal doped boule of silicon in a float zone apparatus. A vacuum or other ambient is established within the apparatus and an rf coil is passed along the boule's length. The rf power is such that the boule is melted to depth "d" which is less than the diameter of the boule. Dopant within the molten depth "d", diffuses to the surface of the melt and evaporates, thereby leaving upon resolidification a relatively high resistivity single crystal sheath along the length of the boule. Wafers cut from the boule can be used for making semiconductor devices with a high resistivity edge portion, thereby providing a device with a high breakdown voltage without the need for field rings, beveling or coating.

公开(公告)号：DE2526507A1

公开(公告)日：1976-01-15

申请号：DE2526507

申请日：1975-06-13

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： THOMAS RICHARD N

IPC: H01L27/00 ,  C30B25/02 ,  C30B33/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L21/469

Abstract: A structure consisting of a thin, mono-crystalline semiconductive layer on an insulating substrate, and a method of fabrication is detailed. The resultant thin semiconductor-on-insulator substrate is useful as a starting substrate in fabricating microelectronic devices.

公开(公告)号：DE2306149A1

公开(公告)日：1973-08-16

申请号：DE2306149

申请日：1973-02-08

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： NATHANSON HARVEY C ,  THOMAS RICHARD N ,  GULDBERG JENS

IPC: H01J1/304 ,  H01J1/32 ,  H01J1/34 ,  H01J1/35 ,  H01J9/02 ,  H01J9/12 ,  H01J31/48 ,  H01J31/49 ,  H01J1/30

Abstract: A solid state radiation sensitive field emitter cathode comprising a single crystal semiconductor member having a body portion with a uniform array of closely spaced and very sharp electron emitting projections from one surface in the form of needles or whisker like members. Electrons are emitted into vacuum when a planar-parallel positive anode is mounted in close proximity to the surface. The cathode is responsive to input radiation such as electrons or light directed onto the cathode in modifying the electron emission from the array of electron emitter projections. The method of manufacturing the cathode by providing a predetermined pattern or mosaic of islands of a material exhibiting a greater etch resistant property than the semiconductor material, on a wafer of a semiconductor material and then etching out between and beneath the islands to undercut to a point where the islands are supported by only a small whisker of the semiconductor material. Removal of the islands results in an electron emitter being exposed from beneath each island wherein carriers generated within the body portion and also carriers generated within the depletion regions of the tips diffuse to the electron emitter projections wherein establishment of a high electric field at the tips of the electron emitter projections results in electron emission primarily due to conduction band tunneling. The device provides about 106 emitting points of close proximity so as to effect photographic-like imaging.