Abstract:
A high-frequency heating device including: a solid-state oscillator that generates a microwave; an amplifier that amplifies the microwave generated by the solid-state oscillator; an isolator that is connected to a stage subsequent to the amplifier and blocks a reflected wave directed from an object exposed with the microwave; an antenna that irradiates the microwave toward the object; and a metal cavity that traps therein the microwave irradiated to the object.
Abstract:
A magnetron (2), a launcher (4) which extracts the output power of the magnetron (2), an impedance generator (5) having one terminal connected to the output terminal of the launcher (4), and a reference signal supplier (6) connected to the other terminal of the impedance generator (5) are included. The reference signal supplier (6) supplies, to the magnetron (2), a reference signal lower in electric power and stabler in frequency than the output from the magnetron (2). The oscillation frequency of the magnetron (2) is locked to the frequency of the reference signal by injection of the reference signal. The impedance generator (5) can reduce the change width of the oscillation frequency of the magnetron (2) by adjusting the load impedance of the magnetron (2). This implements a magnetron oscillator (1) which has high frequency stability and does not fluctuate the frequency even when the output power is changed.
Abstract:
A method and apparatus for producing a distributed plasma at atmospheric pressure. A distributed plasma can be produced at atmospheric pressure by using an inexpensive high frequency power source in communication with a waveguide having a plurality particularly configured couplers disposed therein. The plurality of particularly arranged couplers can be configured in the waveguide to enhance the electromagnetic field strength therein. The plurality of couplers have internal portions disposed inside the waveguide and spaced apart by a distance of ½ wavelength of the high frequency power source and external portions disposed outside the waveguide and spaced apart by a predetermined distance which is calculated to cause the electromagnetic fields in the external portions of adjacent couplers to couple and thereby further enhance the strength of the electromagnetic field in the waveguide. Plasma can be formed in plasma areas defined by gaps between electrodes disposed on the external portions.
Abstract:
A magnetron has an anode cylinder, a plurality of vanes extending radially inwardly from the anode cylinder, a cathode filament extending along a center axis of the anode cylinder, an output section including an antenna coupled to one of the vanes, and a magnetic circuit section for supplying a magnetic field into the anode cylinder, whereby the magnetron oscillates at a fundamental frequency in a range from 400 MHz to 600 MHz.
Abstract:
A solid state microwave generator is utilized as an excitation source for material/ plasma processes. The invention provides very close precise control of the solid state device's power levels to control the ultimate power output and frequency which control is not readily possible with vacuum tube devices. Utilizing the concepts of the invention the total power generated by the system may be easily varied and, further, the power may be easily monitored and used to control other device parameters such as frequency and the like. Because of the degree of control possible within the overall process system of the invention any measurable physical property of the process such as temperature, power, color (e.g., optical pyrometer), or the like that can be monitored and converted to a control signal can be utilized by the present system to carefully control the overall process conditions. These control features are lacking in currently available vacuum tube microwave devices. It is also probable that the overall cost of the solid state based microwave power generators systems will be far less than that of comparable tube type microwave generators.
Abstract:
A microwave generator system for use in a microwave plasma enhanced chemical vapour deposition (MPECVD) system, the microwave generator system comprising: a microwave generator unit configured to produce microwaves at an operating power output suitable for fabricating synthetic diamond material via a chemical vapour deposition process; a fault detection system configured to detect a fault in the microwave generator unit which results in a reduction in the operating power output or a change in frequency; and a re-start system configured to restart the microwave generator unit in response to a fault being detected and recover the operating power output or frequency in a time period of less than 10 seconds after the fault in the microwave generator unit which caused the reduction in the operating power output or the change in frequency.
Abstract:
The present invention relates to a method for depositing nanocrystalline diamond using a diamond vapor deposition facility which includes: a vacuum reactor (3) including a reaction chamber connected to a vacuum source; a plurality of plasma sources arranged along a matrix that is at least two-dimensional in the reaction chamber; and a substrate holder (5) arranged in the reactor, said method being characterized in that the deposition is carried out at a temperature of 100 to 500°C.
Abstract:
The invention relates to a facility (1) for microwave treatment of a load, including: at least one application device (30); at least one solid-state generator (4) in the field of microwaves, connected to at least one application device by a means for guiding (5) the electromagnetic wave; at least one frequency adjustment system (40) designed for adjusting the frequency of the wave produced by the corresponding generator (4); a measurement system (31) for the or each application device (30), designed for measuring the power reflected P R(i) by the application device (30); an automated control means (6) connected to each frequency adjustment system (40) and to each measurement system (31) in order to control the adjustment of the frequency f (i) of the electromagnetic wave according to the reflected power, in order to adjust the reflected power P R(i) and/or to adjust the transmitted power P T(i).