公开(公告)号：EP1115892A1

公开(公告)日：2001-07-18

申请号：EP99969125.6

申请日：1999-09-14

Applicant: Kulicke & Soffa Investments, Inc.

Inventor： ELLIS, Timothy, W.

IPC: C22C5/02 ,  H01H1/02 ,  C22C9/00 ,  C22C21/00

CPC classification number: H01L24/43 ,  C22C5/02 ,  C22C9/00 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/30107 ,  Y10T428/1216 ,  Y10T428/12222 ,  H01L2924/00015 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/01201 ,  H01L2924/01204 ,  H01L2924/013 ,  H01L2924/00013

Abstract: A metal alloy composite comprising a phase of a highly-conductive base metal in the from of a matrix and a phase of another metal positioned within the matrix, the base metal being present in a major amount and the other metal being present in a minor amount, the metal alloy composite being capable of being formed into a very thin wire for use in a semiconductor application which includes a terminal assembly comprising an electrically conductive terminal in conductive contact with a conductive member and another electrically conductive terminal in conductive contact with a semiconductor, said terminals being joined by said alloy composite wire, examples of the base metal being gold, copper, and aluminum.

Abstract translation: 一种金属合金复合体，其包含基体中的高导电性基体金属相和位于基体内的另一种金属的相，所述贱金属以大量存在，另一种金属以少量存在 该金属合金复合体能够形成为用于半导体应用的非常细的导线，其包括端子组件，该端子组件包括与导电部件导电接触的导电端子和与半导体导电接触的另一个导电端子， 所述端子由所述合金复合线连接，所述基体金属的实例为金，铜和铝。

公开(公告)号：EP2927956A1

公开(公告)日：2015-10-07

申请号：EP15164592.6

申请日：2013-07-15

Applicant: Heraeus Materials Singapore Pte. Ltd.

Inventor： Sarangapani, Murali ,  Yeung, Ping Ha ,  Milke, Eugen

IPC: H01L23/49 ,  C22F1/08 ,  C22C9/00

CPC classification number: H01L24/43 ,  C22C9/00 ,  C22C21/02 ,  C22C21/14 ,  C22F1/08 ,  H01B1/026 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/745 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43985 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/85205 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20758 ,  H01L2924/00015 ,  H01L2924/01047 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01078 ,  H01L2924/01024 ,  H01L2924/0102 ,  H01L2924/01058 ,  H01L2924/01012 ,  H01L2924/01057 ,  H01L2924/01013 ,  H01L2924/01005 ,  H01L2924/0104 ,  H01L2924/01022 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01026 ,  H01L2924/01025 ,  H01L2924/00014 ,  H01L2924/01204 ,  H01L2924/01203 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/01201 ,  H01L2924/00012 ,  H01L2924/01033

Abstract: The invention is related to a bonding wire having a yield strength in the range of 50 to 120 MPa, the bonding wire comprising:
a core (2) with a surface,
wherein the core (2) comprises copper as a main component,
wherein an average size of crystal grains in the core (2) is between 2.5 µm and 30 µm, and
wherein the wire core (2) contains silver in an amount between 45 and 900 weight-ppm.

Abstract translation: 本发明涉及屈服强度为50〜120MPa范围内的接合线，该接合线包括：具有表面的芯（2），其中芯（2）包含铜作为主要成分，其中 所述芯（2）中的晶粒的平均尺寸在2.5μm和30μm之间，并且其中所述线芯（2）含有45至900重量ppm的量的银。

公开(公告)号：EP2927955A1

公开(公告)日：2015-10-07

申请号：EP15164579.3

申请日：2013-07-15

Applicant: Heraeus Materials Singapore Pte. Ltd.

Inventor： Sarangapani, Murali ,  Yeung, Ping Ha ,  Milke, Eugen

IPC: H01L23/49 ,  C22F1/08 ,  C22C9/00

CPC classification number: H01L24/43 ,  C22C9/00 ,  C22C21/02 ,  C22C21/14 ,  C22F1/08 ,  H01B1/026 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/745 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43985 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/85205 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20758 ,  H01L2924/00015 ,  H01L2924/01047 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01078 ,  H01L2924/01024 ,  H01L2924/0102 ,  H01L2924/01058 ,  H01L2924/01012 ,  H01L2924/01057 ,  H01L2924/01013 ,  H01L2924/01005 ,  H01L2924/0104 ,  H01L2924/01022 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01026 ,  H01L2924/01025 ,  H01L2924/00014 ,  H01L2924/01204 ,  H01L2924/01203 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/01201 ,  H01L2924/00012 ,  H01L2924/01033

Abstract: The invention is related to a bonding wire having a yield strength in the range of 50 to 120 MPa, the bonding wire comprising:
a core (2) with a surface,
wherein the core (2) comprises copper as a main component,
wherein an average size of crystal grains in the core (2) is between 2.5 µm and 30 µm, and
wherein the wire core (2) contains palladium in an amount between 0.5 and 3 weight-%.

Abstract translation: 本发明涉及屈服强度为50〜120MPa的接合线，该接合线包括：具有表面的芯（2），其中，芯（2）以铜为主要成分，其中， 芯（2）中的晶粒的平均尺寸在2.5μm和30μm之间，其中线芯（2）含有0.5至3重量％的量的钯。

公开(公告)号：EP2768019A2

公开(公告)日：2014-08-20

申请号：EP13002674.3

申请日：2013-07-15

Applicant: Heraeus Materials Singapore Pte. Ltd.

Inventor： Sarangapani, Murali ,  Yeung, Ping Ha ,  Milke, Eugen

IPC: H01L23/49 ,  C22C9/00

CPC classification number: H01L24/43 ,  C22C9/00 ,  C22C21/02 ,  C22C21/14 ,  C22F1/08 ,  H01B1/026 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/745 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43985 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/85205 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20758 ,  H01L2924/00015 ,  H01L2924/01047 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01078 ,  H01L2924/01024 ,  H01L2924/0102 ,  H01L2924/01058 ,  H01L2924/01012 ,  H01L2924/01057 ,  H01L2924/01013 ,  H01L2924/01005 ,  H01L2924/0104 ,  H01L2924/01022 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01026 ,  H01L2924/01025 ,  H01L2924/00014 ,  H01L2924/01204 ,  H01L2924/01203 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/01201 ,  H01L2924/00012 ,  H01L2924/01033

Abstract: The invention is related to a bonding wire, comprising a core with a surface, wherein the core comprises copper as a main component, wherein the core comprises copper as a main component, wherein an average size of crystal grains in the core is between 2.5 µm and 30 µm, and wherein a yield strength of the bonding wire is less than 120 MPa.

公开(公告)号：EP2662889A1

公开(公告)日：2013-11-13

申请号：EP12003603.3

申请日：2012-05-07

Applicant: Heraeus Materials Technology GmbH & Co. KG

Inventor： Milke, Eugen ,  Prenosil, Peter ,  Thomas, Sven

IPC: H01L21/60 ,  H01L23/49 ,  H01B1/02

CPC classification number: H01L24/48 ,  B21C1/003 ,  B21C9/00 ,  B32B15/01 ,  H01B1/023 ,  H01B1/026 ,  H01L24/43 ,  H01L24/45 ,  H01L24/85 ,  H01L25/072 ,  H01L25/165 ,  H01L2224/43 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45033 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45624 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4847 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/16151 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/207 ,  H01L2924/2075 ,  Y10T29/49117 ,  Y10T428/1275 ,  H01L2924/01028 ,  H01L2924/01014 ,  H01L2924/01012 ,  H01L2924/01008 ,  H01L2924/01205 ,  H01L2924/01204 ,  H01L2924/01203 ,  H01L2924/01201 ,  H01L2924/01206 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2224/05599 ,  H01L2924/00013 ,  H01L2924/01049

Abstract: The invention relates to a ribbon, preferably a bonding ribbon for bonding in microelectronics, comprising a first layer comprising copper with a surface and at least a coating layer superimposed over the surface of the first layer, wherein the coating layer comprises aluminium, and an intermediate layer, wherein in a cross-sectional view of the ribbon the area share of the first layer is in the range of from 50 to 96 %, based on the total area of the cross-section of the ribbon, wherein the aspect ratio between the width and the height of the ribbon in a cross-sectional view is in the range of from 0.03 to less than 0.8, wherein the ribbon has a cross-sectional area in the range of from 25'000 µm 2 to 800'000 µm 2 , wherein the intermediate layer is arranged between the first layer and the coating layer, wherein the intermediate layer comprises at least one intermetallic phase comprising material of the first layer and material of the coating layer. The invention further relates to a process for making a wire, to a wire obtainable by said process, to an electric device comprising at least two elements and at least aforementioned wire, to a propelled device comprising said electric device and to a process of connecting two elements through aforementioned wire by wedge-bonding.

Abstract translation: 本发明涉及一种带状物，优选用于在微电子学中粘合的结合带，包括第一层，其包含具有表面的铜和至少叠加在第一层的表面上的涂层，其中该涂层包含铝，以及中间体 层，其中在所述带的横截面视图中，基于所述带的横截面的总面积，所述第一层的面积份额在50至96％的范围内，其中， 宽度和带状物的横截面视图中的高度在0.03至小于0.8的范围内，其中该带的横截面积在25'000μm2至800'000μm2的范围内 其中所述中间层布置在所述第一层和所述涂层之间，其中所述中间层包含至少一个包含所述第一层材料和所述涂层材料的金属间相。 本发明还涉及一种用于将线材制成的方法，可由所述方法可获得的线材组装到包括至少两个元件和至少前述的线材的电气设备到包括所述电气设备的推进设备以及连接两个 元件通过上述丝线通过楔形键合。

公开(公告)号：EP2146372A3

公开(公告)日：2013-11-06

申请号：EP09008708.1

申请日：2009-07-03

Applicant: Semikron Elektronik GmbH & Co. KG Patentabteilung

Inventor： Scheuermann, Uwe

IPC: H01L21/60 ,  H01L23/498

CPC classification number: H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/0612 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48739 ,  H01L2224/48839 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/8384 ,  H01L2224/85439 ,  H01L2224/8584 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/2076 ,  H01L2224/45644 ,  H01L2924/01201 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00015

Abstract: Die Erfindung beschreibt eine leistungselektronische Verbindungseinrichtung mit einer ersten (120) und einer zweiten (220) voneinander elektrisch isolierten Kontaktfläche, mit jeweils mindestens einem einer Edelmetalloberfläche (160,260) aufweisenden Kontaktbereich (16,26) auf diesen Kontaktflächen, je einer auf den Kontaktbereichen angeordneten Sintermetallschicht (18,28) und einem flexiblen Verbindungselement (4). Hierbei weist dieses Verbindungselement eigene dritte (40) und vierte (42) Kontaktbereiche mit jeweils einer Edelmetalloberfläche auf. Ebenso sind diese dritten und vierten Kontaktbereiche mit den Sintermetallschichten der ersten und zweiten Kontaktflächen elektrisch leitend verbunden. Die erste Kontaktfläche (120) kann auf einer Metallisierung (14) eines Substrats angeordnet sein une die zweite Kontaktfläche (220) kann auf einem Leistungshalbleiterbauelement (1) angeordnet sein.

公开(公告)号：EP2369023A1

公开(公告)日：2011-09-28

申请号：EP11004085.4

申请日：2008-09-11

Applicant: Tanaka Denshi Kogyo K.K.

Inventor： Murai, Hiroshi ,  Chiba, Jun

IPC: C22C5/02 ,  H01L21/60 ,  B23K35/30 ,  H01L23/00

CPC classification number: C22C5/02 ,  B23K35/3013 ,  H01L24/02 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45164 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78306 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/0107 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/01071 ,  H01L2924/00014 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/20752 ,  H01L2924/00013 ,  H01L2924/01006

Abstract: [Issues to be solved]
Second bonding failures caused attached oxide of additive elements on high purity Au bonding wire are to be dissolved.
[Solution means]
Au alloy bonding wires comprising:
0.01 - 1.2 wt % Pd,
5 - 100 wt ppm Mg,
5 - 20 wt ppm In,
5 - 20 wt ppm Al,
5 - 20 wt ppm Yb,
optionally 5 - 20 wt ppm Ca and/or at least more than one element among 5 - 20 wt ppm La, 5 - 20 wt ppm Lu, 5 - 100 wt ppm Sn, 5 - 100 wt ppm Sr,

the rest being Au having a purity greater than 99.99 wt %. Bonding wire, which contains these trace additive elements do not cause of disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding to attached on tip of capillary, transferring to the wire at second bonding.

Abstract translation: [待解决的问题]在高纯度Au接合线上引起附加元素的氧化物引起的第二次接合故障将被溶解。 [解决方案] Au合金接合线包括：0.01-1.2重量％的Pd，5-100重量ppm的Mg，5-20重量ppm的In，5-20重量ppm的Al，5-20重量ppm的Yb，任选的5-20重量％ 5至20重量ppm的La，5-20重量ppm的Lu，5-100重量ppm的Sn，5-100重量ppm的Sr中的至少一种元素和/或至少一种元素，其余的是纯度大于99.99的Au 重量％。 含有这些微量添加元素的接合线不会由于由于微量放电而形成的球形污染，并且在第一次接合而附着在毛细管尖端处的污染导致累积污染的干扰，在第二次接合时转移到导线。

公开(公告)号：EP0810293B1

公开(公告)日：2001-10-24

申请号：EP97250166.2

申请日：1997-05-28

Applicant: Tanaka Denshi Kogyo Kabushiki Kaisha

Inventor： Hideyuki, Akimoto

IPC: C22C5/02 ,  H01L21/60

CPC classification number: H01L24/85 ,  B23K20/007 ,  B23K35/3013 ,  C22C5/02 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/01046 ,  H01L2924/01004 ,  H01L2924/0102 ,  H01L2924/00014 ,  H01L2924/01201 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00015 ,  H01L2924/01006

公开(公告)号：EP0761831B1

公开(公告)日：2001-06-13

申请号：EP96304889.7

申请日：1996-07-02

Applicant: TANAKA DENSHI KOGYO KABUSHIKI KAISHA

Inventor： Itabashi, Ichimitsu, c/o Mitaka Fact. of ,  Mimura, Toshitaka, c/o Mitaka Fact. of

IPC: C22C5/02 ,  H01L23/49

CPC classification number: H01L24/745 ,  C22C5/02 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/435 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/48624 ,  H01L2224/745 ,  H01L2924/00011 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/01004 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01006

公开(公告)号：EP0339871A2

公开(公告)日：1989-11-02

申请号：EP89303936.2

申请日：1989-04-20

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Hatcher, Owen W., Jr.

IPC: H01L23/48

CPC classification number: H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0347 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/85201 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00015 ,  H01L2924/01201

Abstract: A corrosion tolerant bonding pad for a semiconductor device includes an interconnect (12) formed on the substrate (10) of the semiconductor device, a passivating layer (16) provided on the interconnect, the passivating layer having an aperture for exposing an enlarged bonding region of the interconnect, a barrier layer (28) provided on the exposed enlarged bonding area of the interconnect (12) and on portions of the passivating layer (16) surrounding the bonding area, and a bonding layer (30) provided on the barrier layer (28). The barrier layer is a non-corrosive, conductive material, for example, a compound of titanium and tungsten (TiW -- known as ti-tungsten).

Abstract translation: 一种用于半导体器件的耐腐蚀性焊盘包括形成在半导体器件的衬底（10）上的互连（12），设置在互连上的钝化层（16），该钝化层具有用于暴露扩大的接合区域 设置在所述互连件（12）的所述暴露的扩大的接合区域上并且围绕所述接合区域的所述钝化层（16）的部分上的阻挡层（28）以及设置在所述阻挡层上的接合层（30） （28）。 阻挡层是非腐蚀性的导电材料，例如钛和钨的化合物（TiW，称为钛 - 钨）。