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公开(公告)号：KR1020130044072A
公开(公告)日：2013-05-02
申请号：KR1020110108335
申请日：2011-10-21
Applicant: 삼성전자주식회사
IPC: H01L33/56 , H01L33/60 , H01L33/50 , C09D183/04 , H05B33/08
CPC classification number: C09D183/04 , C08G77/388 , H01L33/507 , H01L33/56 , H01L33/60 , H01L2224/48091 , H05B33/0803 , H01L33/501 , H01L2924/00014
Abstract: PURPOSE: A light emitting device is provided to prevent the deterioration of the efficiency of a light source due to sulfur or amine which is included in a light emitting layer by using a light shielding layer. CONSTITUTION: A substrate(104) includes an Ag reflector(102). A buffer layer(108) includes a first matrix polymer which is positioned on a light source(106). A polymer layer(110) includes an organic/inorganic hybrid polymer which is positioned on the buffer layer. The polymer layer including the organic/inorganic hybrid polymer has a porosity of less than 5 volume %. A light emitting layer(116) includes luminous particles(114) which are dispersed by a second matrix polymer(112).
Abstract translation: 目的：提供一种发光装置，以通过使用遮光层来防止由包含在发光层中的硫或胺引起的光源效率的劣化。 构成：衬底（104）包括Ag反射器（102）。 缓冲层（108）包括位于光源（106）上的第一基质聚合物。 聚合物层（110）包括位于缓冲层上的有机/无机杂化聚合物。 包含有机/无机杂化聚合物的聚合物层的孔隙率小于5体积％。 发光层（116）包括由第二基质聚合物（112）分散的发光颗粒（114）。
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公开(公告)号：KR1020120137136A
公开(公告)日：2012-12-20
申请号：KR1020110056483
申请日：2011-06-10
Applicant: 삼성전자주식회사
CPC classification number: H01L33/44 , H01L33/501 , H01L33/56 , H01L2224/48091 , Y10T428/254 , Y10T428/31663 , Y10T428/31678 , Y10T428/31931 , C08F28/02 , C08F30/08 , C08G73/0644 , C08G77/04 , C08J5/18 , H01L2924/00014
Abstract: PURPOSE: An optoelectronic device is provided to improve initial efficiency or lifetime of a device by effectively blocking oxygen or moisture from outside. CONSTITUTION: An optoelectronic device comprises a light source, a light emitting layer comprising light emitting particles which comprises on the light source and is dispersed in a matrix polymer. The lamination structure comprises a composite layer which comprises the matrix polymer(112) and the light emitting particles dispersed in the matrix polymer, and the polymer film(116) on the composite layer. The polymer film comprises a first monomer which has at least two thiol group in terminal, and a second monomer which has at least two carbon-carbon unsaturated combinations in the terminal.
Abstract translation: 目的：提供一种光电器件，通过有效地阻挡外界的氧气或水分来提高器件的初始效率或使用寿命。 构成：光电器件包括光源，包含发光粒子的发光层，该发光粒子包含在光源上并分散在基质聚合物中。 层压结构包括复合层，其包含基质聚合物（112）和分散在基质聚合物中的发光颗粒和复合层上的聚合物膜（116）。 聚合物膜包括在末端具有至少两个硫醇基的第一单体和在末端具有至少两个碳 - 碳不饱和键的第二单体。
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公开(公告)号：KR1020090124550A
公开(公告)日：2009-12-03
申请号：KR1020080050835
申请日：2008-05-30
Applicant: 삼성전자주식회사
IPC: B82B3/00
CPC classification number: C09K11/883 , C09K11/02 , C09K11/565 , H01L33/50
Abstract: PURPOSE: A nanocrystal-metal oxide-polymer composite, and a method for manufacturing the composite are provided to reduce the deterioration of performance with time, thereby providing an electronic device capable of operated stably for a long time. CONSTITUTION: A nanocrystal-metal oxide-polymer composite comprises a plurality of nanocrystal(10) inside a metal oxide matrix(20); and an oligomer or polymer(30) which is connected to the organic active group(70) of the metal oxide matrix by a covalent bond. The composite comprises a metal oxide composite layer surrounding the nanocrystal, and an organic polymer layer coating the metal oxide composite layer. The nanocrystal has a core-shell structure.
Abstract translation: 目的：提供一种纳米晶体 - 金属氧化物 - 聚合物复合材料以及该复合材料的制造方法，以便随时间降低性能的劣化，从而提供能够长时间稳定运行的电子器件。 构成：纳米晶体 - 金属氧化物 - 聚合物复合材料包括在金属氧化物基质（20）内的多个纳米晶体（10）; 和通过共价键与金属氧化物基质的有机活性基团（70）连接的低聚物或聚合物（30）。 复合材料包括围绕纳米晶体的金属氧化物复合层和涂覆金属氧化物复合层的有机聚合物层。 纳米晶体具有核 - 壳结构。
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公开(公告)号：KR1020090020248A
公开(公告)日：2009-02-26
申请号：KR1020070084847
申请日：2007-08-23
Applicant: 삼성전자주식회사
IPC: H01L33/00
CPC classification number: C09K11/02 , C09K11/883
Abstract: A nano-crystalline mixture and a light emitting diode using the same are provided to improve the optic use efficiency by minimizing the fluorescence reduction caused by the absorption-resorption in case using the different kinds of semiconductor nano crystal. A blue-LED chip(20) is comprised of a p-type semiconductor and a n-type semiconductor arranged on a packaging frame(10). The luminous layer is comprised of the transparent matrix including the luminous body which covers the blue-LED chip. The transparency resin matrix of the luminous layer altogether includes a green luminescence nano-crystalline composite(40) and a red light emitting nano-crystalline composite(50). The p-type semiconductor of the blue-LED chip is connected to the electrode through a wire(30). The n-type semiconductor is connected to the electrode through the wire.
Abstract translation: 提供纳米结晶混合物和使用其的发光二极管，以通过在使用不同种类的半导体纳米晶体的情况下最小化由吸收 - 吸收引起的荧光还原来提高光学器件的使用效率。 蓝色LED芯片（20）由布置在包装框架（10）上的p型半导体和n型半导体构成。 发光层由包括蓝色LED芯片的发光体的透明矩阵构成。 发光层的透明树脂基体共包含绿色发光纳米晶复合材料（40）和红色发光纳米晶复合材料（50）。 蓝色LED芯片的p型半导体通过导线（30）与电极连接。 n型半导体通过导线连接到电极。
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Patent Agency Ranking
公开(公告)号：KR1020090002090A
公开(公告)日：2009-01-09
申请号：KR1020070054912
申请日：2007-06-05
Applicant: 삼성전자주식회사
IPC: H01L27/146 , B82Y20/00
CPC classification number: H01L27/14667 , H01L27/14607 , H01L27/14694 , H01L27/14696 , H01L31/0296 , H01L31/0304 , H01L31/036
Abstract: The image sensor is provided to reduce the size of pixel and to achieve the high definition by playing the role of the color filter and the photodetector. The photoelectric transformation layer and photoconductive conversion layers(213,213,221) consisting of the semiconductor nanocrystal are laminated on the semiconductor substrate(210). The transparency insulator film(215) is interposed between the photoelectric transformation layers. The photoconductive conversion layer has the energy band gap of the different wavelength range. The photoconductive conversion layer absorbs the wavelength which is short than the red region, 650nm, the wavelength which is short than the green region, 540nm, and the wavelength which is short than the blue region, 490nm.
Abstract translation: 提供图像传感器以减小像素的尺寸并通过播放滤色器和光电检测器的作用来实现高清晰度。 由半导体纳米晶体组成的光电转换层和光电导转换层（213,213,221）层压在半导体衬底（210）上。 透明绝缘膜（215）介于光电转换层之间。 光电导转换层具有不同波长范围的能带隙。 光电导转换层吸收比红色区域短的波长650nm，比绿色区域短的波长540nm，比蓝色区域短的波长为490nm。
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公开(公告)号：KR1020080107578A
公开(公告)日：2008-12-11
申请号：KR1020070055496
申请日：2007-06-07
Applicant: 삼성전자주식회사
CPC classification number: C01B19/007 , B82Y30/00 , C01P2002/54 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/84 , C09K11/883 , Y10T428/2989
Abstract: A core/shell nano-crystalline is provided to have an excellent luminous efficiency and an excellent crystalline at the same time and to be synthesized easily by adjusting a form and a size of the nano-crystalline and to have a structure including the shell nano-crystalline in which metal is doped on a surface. A core/shell nano-crystalline comprises (a) a core nano-crystalline and (b) a shell nano-crystalline which is formed on the core nano-crystalline and is doped to metals. A material comprising the core nano-crystalline is 12 group-16 group, 13 group-15 group and 14 group-16 group compounds and a mixture thereof. A material comprising the core nano-crystalline is selected from a group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs and a mixture thereof.
Abstract translation: 提供核/壳纳米晶体以同时具有优异的发光效率和优异的晶体，并且可以通过调节纳米晶体的形式和尺寸而容易地合成，并且具有包括壳纳米晶体的结构， 在其表面上掺杂有金属的结晶。 核/壳纳米晶体包括（a）芯纳米晶体和（b）壳纳米晶体，其形成在芯纳米晶体上并掺杂到金属上。 包含核心纳米晶体的材料是12组16组，13组-15组和14组16组化合物及其混合物。 包含核心纳米晶体的材料选自CdS，CdSe，CdTe，ZnS，ZnSe，ZnTe，HgS，HgSe，HgTe，PbS，PbSe，PbTe，AlN，AlP，AlAs，GaN，GaP，GaAs ，InN，InP，InAs及其混合物。
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公开(公告)号：KR1020080099438A
公开(公告)日：2008-11-13
申请号：KR1020070044974
申请日：2007-05-09
Applicant: 삼성전자주식회사
CPC classification number: H01L33/502 , C09K11/02 , C09K11/565 , C09K11/883 , H01L2224/48091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: An LED with a superior luminous efficiency, dispersibility and stability of nano-crystalline is provided. The cathode(20) and anode(10) electrode are connected to the light emitting diode chip(30). The nano-crystalline - metal oxide complex monolith(40) is mounted on the light emitting surface of the light emitting diode chip and then the mold layer(50) is formed. The exterior seals this mold layer of structure. The package structure includes the cavity in which the inner sidewall is inclined to the top. A cavity is provided to the built-in region of the light emitting diode.
Abstract translation: 提供了具有优异的发光效率，分散性和纳米晶体稳定性的LED。 阴极（20）和阳极（10）电极连接到发光二极管芯片（30）。 纳米晶金属氧化物复合体整料（40）安装在发光二极管芯片的发光表面上，然后形成模层（50）。 外部密封该模具结构层。 封装结构包括内侧壁相对于顶部倾斜的空腔。 向发光二极管的内置区域提供空腔。
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公开(公告)号：KR100853087B1
公开(公告)日：2008-08-19
申请号：KR1020070040803
申请日：2007-04-26
Applicant: 삼성전자주식회사
CPC classification number: C09K11/02 , C01B21/0632 , C01B25/087 , C01P2004/80 , C09K11/562 , C09K11/621 , C09K11/70 , Y10T428/2991
Abstract: A nanocrystal, a preparation method thereof and electronics having the nanocrystal are provided to improve emission characteristics and color purity of the electronic device having the nanocrystal by employing buffer layer of non-semiconductive material surrounding nanocrystal core consisting of semiconductor. A nanocrystal has: a nanocrystal core(10) consisting of semiconductor; and a buffer layer(20) of non-semiconductive material surrounding the nanocrystal core. The nanocrystal core contains semiconductor of group III-V. The buffer layer is a calcogenic buffer layer. The nanocrystal optionally has at least one shell layer consisting of material selected from a group consisting of group II-VI compound, group II-V compound, group III-VI compound, group III-V compound, group IV-VI compound, group I-III-VI compound, group II-IV-VI compound, group II-IV-V compound and alloys thereof on the buffer layer. A preparation method of the nanocrystal comprises steps of: synthesizing the nanocrystal core by reacting semiconductor precursor in a reaction system having solvent and dispersant; and putting non-semiconductive material into the nanocrystal core solution and forming a buffer layer on the surface of the nanocrystal core. An electronic device such as display, electric luminous element, laser, linear optical device, sensor and photoelectric transformation element contains at least one nanocrystal prepared by the method. Further, the calcogenic buffer layer is selected from S, Se, Te and a mixture thereof.
Abstract translation: 提供纳米晶体及其制备方法和具有纳米晶体的电子器件，以通过采用由半导体构成的纳米晶体核心的非半导体材料的缓冲层来改善具有纳米晶体的电子器件的发射特性和色纯度。 纳米晶体具有由半导体构成的纳米晶核（10） 以及围绕纳米晶核的非半导体材料的缓冲层（20）。 纳米晶核含有III-V族的半导体。 缓冲层是钙质缓冲层。 纳米晶体任选具有至少一个由选自由II-VI族化合物，II-V族化合物，III-VI族化合物，III-V族化合物，IV-VI族化合物，I组 III-VI族化合物，II-IV-VI族化合物，II-IV-V族化合物及其合金。 纳米晶体的制备方法包括以下步骤：通过在具有溶剂和分散剂的反应体系中使半导体前体反应合成纳米晶核; 并将非半导体材料放入纳米晶核心溶液中并在纳米晶核的表面上形成缓冲层。 诸如显示器，发光元件，激光器，线性光学器件，传感器和光电转换元件的电子器件包含至少一种通过该方法制备的纳米晶体。 此外，钙化缓冲层选自S，Se，Te及其混合物。
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公开(公告)号：KR100841186B1
公开(公告)日：2008-06-24
申请号：KR1020070029183
申请日：2007-03-26
Applicant: 삼성전자주식회사
CPC classification number: C30B7/14 , C30B29/40 , C30B29/48 , C30B29/605 , Y10T428/2989
Abstract: A multilayer shell nanocrystal and a preparation method thereof are provided to obtain improved emission efficiency, excellent light stability and excellent chemical stability in nanocrystal by employing a core having an alloy interlayer between different metal nanocrystals, and to control the energy band gap of the nanocrystal by controlling the energy band gap of the alloy core and the energy band gap of the multilayer shell. A multilayer shell nanocrystal(300) comprises: a nanocrystal alloy core(100) comprising an alloy interlayer(30) formed at the interface of at least two kinds of nanocrystal; and a multilayer shell(200) having at least two nanocrystal shell layers formed around the nanocrystal alloy core, and each of the nanocrystal shell layer has different energy band gap. The outmost layer of the multilayer shell has an energy band gap larger than that between the alloy core and the inner shell. A preparation method of the multilayer shell nanoparticles comprises steps of: (a) forming nanocrystal alloy core comprising alloy interlayer at the interface between at least two kinds of nanocrystal; and (b) forming multilayer shell nanocrystal by building at least two nanocrystal shell layers having different band gap each other around the nanocrystal alloy core. The step (a) comprises steps of: preparing a primary nanocrystal(10); building a secondary nanocrystal(50) different from the primary nanocrystal on the surface of the primary nanocrystal; and forming an alloy interlayer at the interface between the primary and the secondary nanocrystals by diffusion. The step (b) comprises steps of: building a primary nanocrystal shell layer(110) by building the primary nanocrystal on the nanocrystal alloy core obtained in step (a); and building a secondary nanocrystal shell layer(120) by building the secondary nanocrystal which is different from the primary nanocrystal on the primary nanocrystal shell layer.
Abstract translation: 提供一种多层壳纳米晶体及其制备方法，通过使用在不同金属纳米晶体之间具有合金中间层的芯，以获得改善的发光效率，优异的光稳定性和优异的纳米晶体化学稳定性，并且通过以下方式控制纳米晶体的能带隙 控制合金芯的能带隙和多层壳的能带隙。 多层壳纳米晶体（300）包括：纳米晶体合金芯（100），其包含在至少两种纳米晶体的界面处形成的合金中间层（30） 和具有在纳米晶体合金芯周围形成的至少两个纳米晶体壳层的多层壳体（200），并且每个纳米晶体壳层具有不同的能带隙。 多层壳体的最外层具有大于合金芯和内壳之间的能带隙。 多层壳纳米颗粒的制备方法包括以下步骤：（a）在至少两种纳米晶体之间的界面处形成包含合金中间层的纳米晶体合金芯; 和（b）通过在纳米晶体合金芯周围构建具有不同带隙的至少两个纳米晶体壳层来形成多层壳纳米晶体。 步骤（a）包括以下步骤：制备初级纳米晶体（10）; 在初级纳米晶体的表面上构建与初级纳米晶体不同的次级纳米晶体（50）; 并通过扩散在初级和次级纳米晶体之间的界面处形成合金中间层。 步骤（b）包括以下步骤：通过在步骤（a）中获得的纳米晶体合金芯上构建初级纳米晶体来构建初级纳米晶体壳层（110）; 以及通过构建与初级纳米晶体壳层上的初级纳米晶体不同的次级纳米晶体来构建次级纳米晶体壳层（120）。
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