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    OPTOELECTRONIC DEVICE
    132.
    发明申请
    OPTOELECTRONIC DEVICE 审中-公开
    光电器件

    公开(公告)号：WO2007031771A1

    公开(公告)日：2007-03-22

    申请号：PCT/GB2006/003436

    申请日：2006-09-15

    Applicant: UNIVERSITY OF SURREY ,  REED, Graham ,  THOMPSON, David, John

    Inventor： REED, Graham ,  THOMPSON, David, John

    IPC: G02F1/025 ,  G02F1/313

    CPC classification number: G02F1/3138 ,  G02F1/025 ,  G02F1/315 ,  G02F2001/0152 ,  G02F2201/063

    Abstract: An optical switch (50) has a Silicon On Insulator (SOI) body (51) incorporating two optical waveguides (52, 53). The waveguides (52, 53) are arranged so that they cross one another to form a crossover (55). Insulating barriers (56, 57) are provided in the SOI body (51) that extend (vertically) from the upper surface (61) of the SOI body to the SiO 2 base layer (54). Importantly, a portion of at least one of the barriers (57) defines a boundary in the crossover (55). Light propagating along an input path of the first waveguide (52) can be reflected into the second waveguide (53) at the boundary in the crossover (55) when the refractive index of the crossover (55) differs on either side of the boundary. Electrodes (59, 60, 64) are provided on the upper surface (61) of the SOI body (51), in contact with n-type doped regions (62, 63) and a p-type doped region (65) forming a p-i-n diode through the crossover (55) on one side of the boundary. This allows free carriers to be injected into the crossover (55) to alter the refractive index of the crossover (55) on that side of the boundary, so allowing the amount of reflection at the boundary to be controlled. As the boundary is defined by the insulating barrier (57), free carriers are well contained at the boundary, resulting in a sharp change in refractive index at the boundary and good quality reflection characteristics in the switch (50).

    Abstract translation: 光开关（50）具有包含两个光波导（52,53）的绝缘体上硅（SOI）体（51）。 波导（52,53）被布置成使得它们彼此交叉以形成交叉（55）。 在从SOI体的上表面（61）向SiO 2基底层（54）延伸（垂直）的SOI体（51）中设置有绝缘阻挡层（56,57）。 重要的是，至少一个障碍物（57）的一部分限定了交叉（55）中的边界。 当交叉（55）的折射率在边界的任一侧不同时，沿着第一波导（52）的输入路径传播的光可以在交叉（55）的边界处反射到第二波导（53）中。 电极（59,60,64）设置在SOI体（51）的上表面（61）上，与n型掺杂区域（62,63）和p型掺杂区域（65）接触，形成 引脚二极管通过交叉（55）在边界的一侧。 这允许自由载流子注入到交叉（55）中以改变边界那侧上的交叉（55）的折射率，从而允许控制边界处的反射量。 由于边界由绝缘屏障（57）限定，边界处的自由载流子很好地被包含在边界处，导致开关（50）中的折射率急剧变化和良好的反射特性。

    SEMICONDUCTOR OPTICAL WAVEGUIDE DEVICE
    133.
    发明申请
    SEMICONDUCTOR OPTICAL WAVEGUIDE DEVICE 审中-公开
    半导体光波导器件

    公开(公告)号：WO2002069004A2

    公开(公告)日：2002-09-06

    申请号：PCT/GB2002/000562

    申请日：2002-02-08

    Applicant: BOOKHAM TECHNOLOGY PLC ,  VONSOVICI, Adrian, Petru ,  WHITEMAN, Robert, Ralph

    Inventor： VONSOVICI, Adrian, Petru ,  WHITEMAN, Robert, Ralph

    IPC: G02B6/122

    CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2202/06 ,  G02F2202/105

    Abstract: A semiconductor optical waveguide device comprises a semiconductor rib waveguide comprising an elongate rib portion and slab regions on immediately adjacent opposite lateral sides of the rib portion, the rib portion extending above the slab regions, at least one of the slab regions including a recess spaced apart from the rib portion, an un-doped lateral wall of the recess providing a lateral boundary (referred to herein as "the recess lateral wall boundary") of the rib waveguide such that in use it laterally confines an optical wave propagated by the waveguide. One or more doped regions may be situated adjacent to the waveguide.

    Abstract translation: 半导体光波导器件包括半导体肋波导，其包括细长肋部分和在肋部分的紧邻的相对侧面上的板区域，肋部分延伸到板坯区域之上，至少一个板坯区域包括间隔开的凹部 从肋部分，凹槽的未掺杂的侧壁提供肋波导的横向边界（这里称为“凹槽侧壁边界”），使得在使用中横向限制由波导传播的光波。 一个或多个掺杂区域可以位于与波导相邻的位置。

    BENT ELECTRO-ABSORPTION MODULATOR
    134.
    发明申请
    BENT ELECTRO-ABSORPTION MODULATOR 审中-公开
    电流电吸收调制器

    公开(公告)号：WO02017002A3

    公开(公告)日：2002-05-30

    申请号：PCT/DK2001/000544

    申请日：2001-08-17

    IPC: G02F1/015 ,  G02F1/017

    CPC classification number: B82Y20/00 ,  G02F1/01708 ,  G02F1/01716 ,  G02F2001/0151 ,  G02F2001/0157 ,  G02F2201/063 ,  G02F2203/026

    Abstract: The present invention relates to a method and a device for modulating optical signals based on modulating bending losses in bend, quantum well semiconductor waveguide sections. The complex refractive index of the optical active semiconducting components of the waveguide section is modulated by applying a variable electric or electronmagnetic field. The modulation of the complex refractive index results in a modulation of the refractive index contrast and the absorption coefficient for the waveguide at the frequency of the light. By carefully adjusting the composition of the semiconducting components and the applied electric field in relation to the frequency of the modulated radiation, the bending losses (and possibly coupling losses) will provide extinction of light guided by the bent waveguide section. The refractive index contract may be modulated while keeping the absorption coefficient substantially constant and small, whereby the guided light can be modulated only by bending losses. Alternatively, the invention may be applied to enhance the extinction ratio of existing absorption modulators such as Electro-Absorption Modulators (EAMs) in which case extinction by absorption and extinction by bendng losses co-operates to provide more compact modulators with improved performance (extinction) and speed.

    Abstract translation: 本发明涉及用于基于量子阱半导体曲线波导段中的曲率损耗的调制来调制光信号的方法和设备。 波导段的光学有源半导体元件的复折射率通过施加可变电场或电磁场来调制。 复折射率的调制导致在光的频率下影响波导的吸收系数的折射率对比度的调制。 如果仔细调整所述半导体元件的组合物和相对于施加到辐射，弯曲损耗，以及任选地耦合损耗的频率的电场，使由的弯曲部被引导的光的消光 波导。 可以在保持吸​​收系数基本恒定且较小的情况下调制折射率的对比度，从而仅由于曲率损失才能调制引导光。 根据另一个实施方案，本发明可以被应用于增强现有的吸收调节剂，例如电吸收调制器的消光比，在这种情况下，消光通过吸收和淬火由曲率允许 共同实现更紧凑的调制器产量（消光）和速度提高。

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