公开(公告)号：WO2006022931A2

公开(公告)日：2006-03-02

申请号：PCT/US2005017468

申请日：2005-05-18

Applicant: LUXTERA INC ,  GUNN LAWRENCE C III ,  KOUMANS ROGER ,  LI BING ,  LI GUO LIANG ,  PINGUET THIERRY J

Inventor： GUNN LAWRENCE C III ,  KOUMANS ROGER ,  LI BING ,  LI GUO LIANG ,  PINGUET THIERRY J

IPC: G02B6/10

CPC classification number: G02F1/025 ,  G02B2006/12097 ,  G02B2006/12142 ,  G02F1/2257 ,  G02F2201/063

Abstract: High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

Abstract translation: 高速光调制器可以由设置在SOI或其它硅基衬底上的硅肋光波导中形成的反向偏置横向PN二极管制成。 在P和N掺杂区域的边界处形成PN结。 PN结的耗尽区与通过波导传播的引导光模的中心重叠。 电调制反向偏置横向PN二极管导致在波导中传播的光波的相移。 现有技术正向偏置的PN和PIN二极管调制器已经是相对低速的器件。

公开(公告)号：WO2005017609A3

公开(公告)日：2005-06-30

申请号：PCT/US2004026856

申请日：2004-08-16

Applicant: LUXTERA INC ,  GUNN LAWRENCE C III ,  KOUMANS ROGER ,  LI BING ,  LI GUO LIANG ,  PINGUET THIERRY J

Inventor： GUNN LAWRENCE C III ,  KOUMANS ROGER ,  LI BING ,  LI GUO LIANG ,  PINGUET THIERRY J

IPC: G02B6/12 ,  G02F20060101 ,  G02F1/01 ,  G02F1/025 ,  G02F1/225 ,  H04B10/04

CPC classification number: H01S5/0265 ,  G02B2006/12142 ,  G02B2006/12159 ,  G02F1/0121 ,  G02F1/025 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2201/127 ,  G02F2201/16 ,  G02F2201/20 ,  H01S5/5027 ,  H04B10/5051 ,  H04B10/5053

Abstract: High speed optical modulators (700) can be made of k modulators (740) connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line (710) is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers (720). Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.

Abstract translation: 高速光学调制器（700）可以由串联连接的k个调制器（740）制成，设置在各种半导体衬底之一上。 在微波传输线（710）中传播的电信号以规则的间隔从传输线路中分离出来，并由k个分布式放大器（720）放大。 k个分布式放大器的每个输出连接到k个调制器中的相应一个。 分布式放大器调制器可以具有比可比较的集总元件调制器高得多的调制速度，这是由于每个k个调制器的电容较小。 由于分布式放大器提供的阻抗匹配，分布式放大器调制器可以具有比类似行波调制器更高的调制速度。

公开(公告)号：EP1779161A4

公开(公告)日：2013-03-27

申请号：EP05750940

申请日：2005-05-18

Applicant: LUXTERA INC

Inventor： GUNN LAWRENCE C III ,  KOUMANS ROGER ,  LI BING ,  LI GUO LIANG ,  PINGUET THIERRY J

IPC: G02B6/12 ,  G02F1/025

CPC classification number: G02F1/025 ,  G02B2006/12097 ,  G02B2006/12142 ,  G02F1/2257 ,  G02F2201/063

Abstract: High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

公开(公告)号：EP1660923A4

公开(公告)日：2010-10-06

申请号：EP04781523

申请日：2004-08-16

Applicant: LUXTERA INC

Inventor： GUNN LAWRENCE C III ,  KOUMANS ROGER ,  LI BING ,  LI GUO LIANG ,  PINGUET THIERRY J

IPC: G02B6/12 ,  G02F20060101 ,  G02F1/01 ,  G02F1/025 ,  G02F1/225 ,  H04B10/04 ,  H04B10/155

CPC classification number: H01S5/0265 ,  G02B2006/12142 ,  G02B2006/12159 ,  G02F1/0121 ,  G02F1/025 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2201/127 ,  G02F2201/16 ,  G02F2201/20 ,  H01S5/5027 ,  H04B10/5051 ,  H04B10/5053