MATRIX ADDRESSABLE DISPLAY WITH ELECTROSTATIC DISCHARGE PROTECTION
    132.
    发明公开
    MATRIX ADDRESSABLE DISPLAY WITH ELECTROSTATIC DISCHARGE PROTECTION 失效
    矩阵寻址的显示装置的保护,防止静电放电

    公开(公告)号:EP0923788A1

    公开(公告)日:1999-06-23

    申请号:EP97939819.0

    申请日:1997-09-04

    CPC classification number: H01J31/127 H01J3/022 H01J2201/319 H01J2329/92

    Abstract: A field emission display includes electrostatic discharge protection circuits coupled to an emitter substrate and an extraction grid. In the preferred embodiment, the electrostatic discharge circuit includes diodes reverse biased between grid sections and a first reference potential or between row lines and a second reference potential. The diodes provide a current path to discharge static voltage and thereby prevent a high voltage differential from being maintained between the emitter sets and the extraction grids. The diodes thereby prevent the emitter sets from emitting electrons at a high rate that may damage or destroy the emitter sets. In one embodiment, the diodes are coupled directly between the grid sections and the row lines. In one embodiment, the diodes are formed in an insulative layer carrying the grid sections. In another embodiment, the diodes are integrated into the emitter substrate.

    FIELD EMITTER DEVICE, AND VEIL PROCESS FOR THE FABRICATION THEREOF
    133.
    发明公开
    FIELD EMITTER DEVICE, AND VEIL PROCESS FOR THE FABRICATION THEREOF 失效
    场发射装置及DERSTELLUNG保护层法

    公开(公告)号:EP0876676A2

    公开(公告)日:1998-11-11

    申请号:EP96927441.0

    申请日:1996-08-19

    Abstract: A field emitter device formed by a veil process wherein a protective layer including a release layer is deposited on a gate electrode layer (62) for the device, the protective layer overlaying the circumscribing peripheral edge of the opening of the gate electrode layer (62) to protect the edge of the gate electrode layer (62) during etching of a field emitter cavity (72) in a dielectric material layer (30) on a substrate (12) and during the formation of a field emitter element (40) in the cavity by depositing a field emitter material through the opening (72). The protective layer is readily removed subsequent to completion of the cavity etching formation steps, to yield the field emitter device. The field emission device further includes a current limiter composition (14) for permitting high frequency emission of electrons from the field emitter element (40) at low turn-on voltage.

    Cathode d'écran plat de visualisation à résistance d'accès constante
    140.
    发明公开
    Cathode d'écran plat de visualisation à résistance d'accès constante 失效
    Kathode eines flachen Bildschirmes mit konstantem Zugriffswiderstand

    公开(公告)号:EP0696045A1

    公开(公告)日:1996-02-07

    申请号:EP95410079.8

    申请日:1995-08-02

    CPC classification number: H01J1/3042 H01J2201/319 H01J2329/00

    Abstract: L'invention concerne une cathode (1) à micropointes pour écran plat de visualisation, du type comportant un substrat (10), au moins un conducteur de cathode (13), et des micropointes (2) disposées sur une couche résistive (11) ; ledit conducteur de cathode (13) étant disposé au-dessus de la couche résistive (11), et présentant des ouvertures circulaires (17) au centre de chacune desquelles est disposée une micro-pointe (2).

    Abstract translation: 阴极(1)包括绝缘基板(10)和支撑微尖端阵列(2)的电阻层(11)。 阴极导体(13)通过薄导体涂层(19)放置在电阻层的顶部上。 导体以列(15)的方式组织,每列包含大量微型尖端。 微型尖端位于沿着阴极导体存在的圆形开口(17)的中心。 因此,每个微尖端通过具有相同电阻率的圆形区域与导体分离。 控制栅格(3)与阴极相关联并且通过两个绝缘层(16,18)与导体分离。

Patent Agency Ranking