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    Semitransparent photocathode
    131.
    发明授权
    Semitransparent photocathode 失效
    半透明光刻胶

    公开(公告)号：US3868523A

    公开(公告)日：1975-02-25

    申请号：US41270473

    申请日：1973-11-05

    Applicant: PHILIPS CORP

    Inventor： KLOPFER ANTON MARTIN ,  GARBE SIEGFRIED ,  FRANK GUNTER ,  PETEREK MANFRED

    IPC: C30B19/12 ,  H01J1/34 ,  H01J39/16

    CPC classification number: C30B19/12 ,  H01J1/34 ,  H01J2201/3423

    Abstract: In order to obtain an optimum freedom in the choice of the material in a semitransparent photocathode which consists of IIIV semiconductor compounds and in which the matching of the lattice constant of the active layer to that of the substrate is achieved by an intermediate layer, and thus to arrive at a sensitivity and/or optical wide band condition which is as high as possible, according to the invention the composition of the intermediate layer is independent of the substrate and of the active layer and its lattice constant differs from the lattice constant of the active layer by less than 0.3% and differs from the grid constant of the substrate up to several per cent, for example up to 3%. Such a photocathode may consist in particular of a substrate of GaP, an intermediate layer of AlxGa1 xAs with x>0.8 and an active layer of GaAs.

    Abstract translation: 为了获得在由III-V族半导体化合物组成的半透明光电阴极中选择材料的最佳自由度，并且通过中间层实现了有源层的晶格常数与衬底的晶格常数的匹配， 并且因此达到尽可能高的灵敏度和/或光学宽带状态，根据本发明，中间层的组成与衬底和有源层无关，其晶格常数不同于晶格常数 的活性层小于0.3％，并且不同于衬底的栅格常数达几个百分比，例如高达3％。 这种光电阴极可以特别包括GaP的衬底，具有x> 0.8的Al x Ga 1-x As的中间层和GaAs的有源层。

    Photosensitive junction controlled electron emitter
    132.
    发明授权
    Photosensitive junction controlled electron emitter 失效
    感光连接控制电子发射器

    公开(公告)号：US3845296A

    公开(公告)日：1974-10-29

    申请号：US40522973

    申请日：1973-10-10

    Applicant: US ARMY

    Inventor： SCHNITZLER A

    IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01L27/144

    CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J2201/3423 ,  H01J2231/50026 ,  H01L27/1446

    Abstract: A sandwich structure of photosensitive junctions in series with a mosaic of photoemitters. An external grid is positioned adjacent the mosaic of photoemitters and has the high voltage side of a step up voltage divider thereto with the low voltage side connected to the input side of the sandwich structure. The sandwich structure and external grid are enclosed in a vacuum envelope for converting an input optical radiant image into an electron image for display on an electroluminescent screen. A bias light is uniformly flooded over the mosaic of photoemitters to provide saturation electron current therefrom. The flow of electrons emitted from the photoemitters are in proportion to the intensity of infrared light incident on the input side of the sandwich structure. The input side of the structure has an antireflection coating thereof for aiding the incident infrared light in producing electron-hole pairs across the photosensitive junctions.

    Abstract translation: 光敏接头的三明治结构与光电发生器的马赛克串联。 外部栅极位于照明器的马赛克附近，并且具有升压分压器的高压侧，低压侧连接到夹层结构的输入侧。 将夹层结构和外部格栅封装在真空外壳中，用于将输入光学辐射图像转换成电子图像以在电致发光屏幕上显示。 偏置光均匀地淹没在光电变换器的马赛克上，从而提供饱和电子电流。 从光电发射器发射的电子的流动与入射在夹层结构的输入侧的红外光的强度成比例。 结构的输入侧具有防反射涂层，用于帮助入射的红外光在整个感光结上产生电子 - 空穴对。

    Tuneable infrared photocathode
    133.
    发明授权
    Tuneable infrared photocathode 失效
    可调红外光电照相机

    公开(公告)号：US3814993A

    公开(公告)日：1974-06-04

    申请号：US30678672

    申请日：1972-11-15

    Applicant: US NAVY

    Inventor： KENNEDY A

    IPC: H01J1/34 ,  H01L15/00

    CPC classification number: H01J1/34 ,  H01J2201/3423

    Abstract: A tuneable field assisted photocathode structured as a three layer double heterojunction device with a low work function cesium oxide coating on the electron emitting surface. An internal field assistance bias aids the flow of electrons from a narrow bandgap region, where they are photo-generated, to the wider bandgap negative electron affinity surface region for vacuum emission.

    Abstract translation: 可调谐的场辅助光电阴极被构造为具有低功函数氧化铯涂层的电子发射表面上的三层双异质结装置。 内部现场辅助偏置有助于将电子从狭窄的带隙区域流出，在那里它们被光生产，到更宽的带隙负电子亲和表面区域用于真空发射。

    Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response
    134.
    发明授权
    Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response 失效
    形成具有高量子效率和长波长响应的III-V族化合物光聚合物的方法

    公开(公告)号：US3672992A

    公开(公告)日：1972-06-27

    申请号：US3672992D

    申请日：1969-07-30

    Applicant: GEN ELECTRIC

    Inventor： SCHAEFER DONALD L

    IPC: H01J9/12 ,  B44D1/18

    CPC classification number: H01J9/12 ,  H01J2201/3423 ,  Y10S148/006 ,  Y10S148/059 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/119 ,  Y10S148/15 ,  Y10S148/169 ,  Y10S438/918

    Abstract: A PHOTOEMITTER HAVING A HIGH QUANTUM EFFICIENCY AND A LOW WORK FUNCTION FOR PHOTOEMISSION, E.G. PHOTOELECTRIC THRESHOLD, IS FORMED BY DEPOSITING A 10-100 A. FILM OF A WIDE BANDGAP GROUP III-V COMPOUND, E.G. GALLIUM PHOSPHIDE, ATOP A 0.5-10 MICRON THICK LAYER OF A SECOND GROUP III-V COMPOUND, E.G. GALLIUM ANTIMONIDE, HAVING A BANDGAP MATCHING THE DESIRED PHOTOELECTRIC THRESHOLD. THE FILM SURFACE THEN IS TREATED WITH CESIUM (OR CESIUM AND OXYGEN) TO REDUCE THE SURFACE WORK FUNCTION OF THE COMPOSITE STRUCTURE TO THE DESIRED PHOTOELECTRIC THRESHOLD. WHEN THE GROUP III-V LAYER FORMING THE PHOTOEMITTER IS EPITAXIALLY GROWN ATOP AN ORIENTED SUBSTRATE OF A SEMICONDUCTIVE MATERIAL SUCH AS GALLIUM ARSENIDE HAVING A BANDGAP WIDER THAN THE BANDGAP OF THE OVERLYING LAYER, THE RESULTING PHOTOEMITTER IS TRANSPARENT ONLY IN A RANGE BETWEEN THE BANDGAP OF THE SUBSTRATE AND THE BANDGAP OF THE OVERLYING LAYER.

    NIGHT VISION DEVICE HAVING AN IMAGE INTENSIFIER TUBE
    139.
    发明公开
    NIGHT VISION DEVICE HAVING AN IMAGE INTENSIFIER TUBE 失效
    具有图像增强管的夜视设备

    公开(公告)号：EP0996961A1

    公开(公告)日：2000-05-03

    申请号：EP98936962.4

    申请日：1998-07-15

    Applicant: LITTON SYSTEMS, INC.

    Inventor： SINOR, Timothy, W. ,  ESTRERA, Joseph, P.

    IPC: H01J40/14 ,  H01J43/00 ,  H01L31/18

    CPC classification number: H01J31/506 ,  H01J1/34 ,  H01J29/38 ,  H01J2201/3423

    Abstract: A night vision device (10) includes an image intensifier tube (14) which includes a photocathode (22) responsive both to white light and to infrared light to release photoelectrons. The photocathode (22) is particularly sensitive to infrared light at the 980 nm wavelength, and has desirable spectral response characteristics.

    Abstract translation: 夜视装置（10）包括图像增强管（14），该图像增强管包括响应白光和红外光以释放光电子的光电阴极（22）。 光阴极（22）对980nm波长的红外光特别敏感，并且具有理想的光谱响应特性。

    Photomultiplier having a photocathode comprised of semiconductor material
    140.
    发明公开
    Photomultiplier having a photocathode comprised of semiconductor material 失效
    与现有的半导体材料的光电阴极光电倍增

    公开(公告)号：EP0718865A3

    公开(公告)日：1998-02-04

    申请号：EP95309258.2

    申请日：1995-12-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Niigaki, Minoru, c/o Hamamatsu Photonics K.K. ,  Hirohata, Toru, c/o Hamamatsu Photonics K.K. ,  Suzuki, Tomoko, c/o Hamamatsu Photonics K.K. ,  Yamada, Masami, c/o Hamamatsu Photonics K.K.

    IPC: H01J1/34 ,  H01J43/08

    CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423

    Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode (15) and a lower surface electrode (17) by a battery (18). Upon application of this voltage, a p-n junction formed between a contact layer (14) and an electron emission layer (13) is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer (12) in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer into excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

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