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公开(公告)号：US20190271921A1
公开(公告)日：2019-09-05
申请号：US16417706
申请日：2019-05-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Arie Jeffrey Den Boef , Timothy Dugan Davis , Peter David Engblom , Kaustuve Bhattacharyya
Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.
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公开(公告)号：US10394137B2
公开(公告)日：2019-08-27
申请号：US15968743
申请日：2018-05-01
Applicant: ASML Netherlands B.V.
Inventor： Youri Johannes Laurentius Maria Van Dommelen , Peter David Engblom , Lambertus Gerardus Maria Kessels , Arie Jeffrey Den Boef , Kaustuve Bhattacharyya , Paul Christiaan Hinnen , Marco Johannes Annemarie Pieters
IPC: G03F7/20
Abstract: A method and apparatus for obtaining focus information relating to a lithographic process. The method includes illuminating a target, the target having alternating first and second structures, wherein the form of the second structures is focus dependent, while the form of the first structures does not have the same focus dependence as that of the second structures, and detecting radiation redirected by the target to obtain for that target an asymmetry measurement representing an overall asymmetry of the target, wherein the asymmetry measurement is indicative of focus of the beam forming the target. An associated mask for forming such a target, and a substrate having such a target.
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公开(公告)号：US10386735B2
公开(公告)日：2019-08-20
申请号：US15754470
申请日：2016-08-22
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Arie Jeffrey Den Boef , Nitesh Pandey , Patricius Aloysius Jacobus Tinnemans , Stefan Michiel Witte , Kjeld Sijbrand Eduard Eikema
Abstract: A lithographic apparatus comprises comprise a substrate table constructed to hold a substrate; and a sensor configured to sense a position of an alignment mark provided onto the substrate held by the substrate table. The sensor comprises a source of radiation configured to illuminate the alignment mark with a radiation beam, a detector configured to detect the radiation beam, having interacted with the alignment mark, as an out of focus optical pattern, and a data processing system. The data processing system is configured to receive image data representing the out of focus optical pattern, and process the image data for determining alignment information, comprising applying a lensless imaging algorithm to the out of focus optical pattern.
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144.发明授权公开(公告)号：US10379448B2
公开(公告)日：2019-08-13
申请号：US15875156
申请日：2018-01-19
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Sander Bas Roobol , Nan Lin , Willem Marie Julia Marcel Coene , Arie Jeffrey Den Boef
Abstract: Target structures such as overlay gratings (Ta and Tb) are formed on a substrate (W) by a lithographic process. The first target is illuminated with a spot of first radiation (456a, Sa) and simultaneously the second target is illuminated with a spot of second radiation (456b, Sb). A sensor (418) detects at different locations, portions (460x−, 460x+) of said first radiation that have been diffracted in a first direction by features of the first target and portions (460y−, 460y+) of said second radiation that have been diffracted in a second direction by features of the second target. Asymmetry in X and Y directions can be detected simultaneously, reducing the time required for overlay measurements in X and Y. The two spots of radiation at soft x-ray wavelength can be generated simply by exciting two locations (710a, 710b) in a higher harmonic generation (HHG) radiation source or inverse Compton scattering source.
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公开(公告)号：US10338484B2
公开(公告)日：2019-07-02
申请号：US15181126
申请日：2016-06-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Arie Jeffrey Den Boef , Timothy Dugan Davis , Peter David Engblom , Kaustuve Bhattacharyya
Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.
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Patent Agency Ranking
146.发明申请公开(公告)号：US20190056216A1
公开(公告)日：2019-02-21
申请号：US16168355
申请日：2018-10-23
Applicant: ASML Netherlands B.V.
Inventor： Henricus Petrus Maria PELLEMANS , Arie Jeffrey Den Boef
CPC classification number: G01B11/24 , G03F7/70191 , G03F7/70633 , G03F7/7085
Abstract: A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern. Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.
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147.发明授权公开(公告)号：US10209061B2
公开(公告)日：2019-02-19
申请号：US15913253
申请日：2018-03-06
Applicant: ASML Netherlands B.V.
Inventor： Henricus Petrus Maria Pellemans , Arie Jeffrey Den Boef
Abstract: A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern. Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.
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公开(公告)号：US20190018326A1
公开(公告)日：2019-01-17
申请号：US16125074
申请日：2018-09-07
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Omer Abubaker Omer Adam , Te-Chih Huang , Youping Zhang
Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.
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公开(公告)号：US20180364036A1
公开(公告)日：2018-12-20
申请号：US15988681
申请日：2018-05-24
Applicant: ASML Netherlands B.V.
Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth/pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.
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公开(公告)号：US10073357B2
公开(公告)日：2018-09-11
申请号：US15117409
申请日：2015-01-28
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Omer Abubaker Omer Adam , Te-Chih Huang , Youping Zhang
CPC classification number: G03F7/70633 , G01N21/47 , G01N21/8806 , G01N2201/12 , G03F7/70683
Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.
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