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公开(公告)号：JPS63186114A
公开(公告)日：1988-08-01
申请号：JP1714987
申请日：1987-01-29
Applicant: CANON KK
Inventor： TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To measure fine vibrations with high accuracy and to obtain a small- sized, lightweight detecting device which providing an electron emission element to a base body so that its electron emission direction slants to the vertical direction of the base surface. CONSTITUTION:For example, a surface conduction type electron emission element has electrodes 10 and 12 formed on an insulating substrate 13 and a rough high-resistance thin film 11 between them. Then a voltage is applied between the electrodes 10 and 12 and then electrons are emitted from the surface of the high resistance thin film 11 and converged by a control electrode 6. A reflecting body 4 is manufactured by; drawing lines of 0.1mum on an Si wafer by electron beam drawing, etc., by applying lithography technique and forming recesses and projections at intervals of 0.1mum by etching, etc. Then a grating reflecting surface is formed on the reflecting body 4 and the intensity of an electron beam is detected from the intensity difference of reflected electrons at edge parts of the uneven part and the difference in secondary electron emission probability to detect vibrations.
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公开(公告)号：JPS63184230A
公开(公告)日：1988-07-29
申请号：JP22566787
申请日：1987-09-08
Applicant: CANON KK
Inventor： YOKONO KOJIRO , NOMURA ICHIRO , KANEKO TETSUYA , SHIMIZU AKIRA , TSUKAMOTO TAKEO , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To reduce dispersion of an interelemental electron emission characteristic while making a captioned element without resorting to unstable way such as forming by making a controlled discontinuous high resistance part an electron emission part and forming the element of the high resistance part and a low resistance part impressing voltage on the high resistance part. CONSTITUTION:In an electron emission part having high resistance, a state of distribution of fine electric field concentration body is controlled for being discontinuously formed. Namely, metal particles 6 are vacuum evaporated on an insulator 1, wherein the electrodes 2 and 3 are formed, by an ordinary vacuum evaporation method, then metal particles 6 are oxidized (or nitrided) for forming a thin oxidation layer 7 (or nitrification layer) or the surface. Further, metal particles 6 are again vacuum evaporated by ordinary vacuum evaporation for oxidation (or nitrification). In this way, by repeating vacuum evaporation and oxidation desired times, metal particles 6 are separated by the oxidation layer 7 (or nitrification layer) to form the high resistance part 4 having a controlled discontinuous part. The element can be thereby made without resorting to unstable prescription such as foaming with small dispersion of interelemental electron emission characteristic.
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公开(公告)号：JPS63166120A
公开(公告)日：1988-07-09
申请号：JP30921486
申请日：1986-12-27
Applicant: CANON KK
Inventor： SHIMODA ISAMU , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO , OKUNUKI MASAHIKO
Abstract: PURPOSE:To improve the electron emission efficiency of an electron emitting element and to stabilize the operation by installing a means for transfering heat from an electron emitting element so that a temperature of the electron emitting element is kept to be an atmospheric temperature or below. CONSTITUTION:An electron emitting element 1 is connected with a heat- radiating plate 2, and heat emitted from the electron emitting element 1 is conveyed to the heat radiating plate 2 so as to be air-cooled. Heat generated from the element 1 is escaped or heat of the element 1 is robbed by the following means where heat is carried from the electron emitting element 1, for example; the heat-radiating plate 2, a water-cooling device, and an oil-cooling device in which metals and liquids excellent in heat conductivity are used, heat pipes in which heat radiation is performed by vaporization and condensation of liquids, and cooling means where Peltier effect or the like is used.
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公开(公告)号：JPS6369133A
公开(公告)日：1988-03-29
申请号：JP21282286
申请日：1986-09-11
Applicant: CANON KK
Inventor： SHIMIZU AKIRA , TSUKAMOTO TAKEO , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To enable many electron emission elements to be easily controlled with high precision, by changing driving voltages applied to the electron emission elements whenever pulses of input pulse signals are inputted by a driving means. CONSTITUTION:When a pulse signal phi is inputted to an input terminal T in a logic circuit 13, the output terminal Q is inverted to be on a high level and on a low level alternately whenever the pulses are inputted. When the output terminal Q is on the high level, an electronic switch 12 is turned ON, so that a current flows across a resistance R and a voltage approximately equal to a voltage V2 is applied to an acceleration electrode 11. When the voltage much higher than that on the electrode (a) is applied to the acceleration electrode 11 in this way, electrons are accelerated and emitted from an electron emission port of an electron emission element 10. On the contrary, when the output terminal Q is on the low level, the electronic switch is turned OFF, so that the acceleration electrode 11 becomes equipotential with the electrode (a) and the electron emission is suppressed. Therefore, the electron emission can be performed at desirable timing or for a desirable time only by properly setting periods and phases of the input signal phi.
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公开(公告)号：JPS6348692A
公开(公告)日：1988-03-01
申请号：JP19185186
申请日：1986-08-15
Applicant: CANON KK
Inventor： KAN FUMITAKA , NAKAMURA KENJI , HAYAKAWA NAOJI , TAKENOUCHI MASANORI , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To instantly execute information transfer in parallel ray in transferring information between plural memory units comprising an electron ray source, an electron ray detecting means and a drive means. CONSTITUTION:A magnetic field in the direction (y) by magnetic field generating means SM1, SM2 applies information transfer/shift between the memory units MU1, MU2 and MU3, MU4. Moreover, a magnetic field in a direction (x) by magnetic field generating means SM3, SM4 applies information transfer/shift between the memory units MU1, MU3 and MU2, MU4. Then the shift, inverse shift in the column direction of the information and the shift/inverse shift of the information in the row direction are applied in an optional memory unit MU.
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Patent Agency Ranking
公开(公告)号：JPS6347855A
公开(公告)日：1988-02-29
申请号：JP19186286
申请日：1986-08-15
Applicant: CANON KK
Inventor： NAKAMURA KENJI , KAN FUMITAKA , HAYAKAWA NAOJI , TAKENOUCHI MASANORI , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To perform a logical inverse operation, by storing a bit of information by transferring an electron beam between two memory units, and providing a means which deflects the electron beam. CONSTITUTION:Memory units MU1 and MU2 in which plural elements consisting of an electron beam detecting means D, a driving means T, and an electron beam source E are arranged, are installed oppositely, and deflecting electrodes SP1, SG1A, SG1B, and SP2, SG2A, SG2B to deflect the electron beam are arranged. And, for example, it is possible to handle a bit of logical value information of one bit by the two memory units, an element U111, and an element U112 arranged oppositely to the U111, and one cycle is formed by a stage where the memory unit MU1 is set at an R mode, and the memory unit MU2 at a W mode, and the stage following the above stage, where the memory unit MU1 is set at the W mode, and the memory unit MU2 at the R mode. And it is possible to perform selection by switching a switch SWD to a terminal NOP, or a terminal NOT, by one of two cycles, a NOP cycle which holds a logical value at the time of completing a preceding cycle, and a NOT cycle which inverses the logical value.
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公开(公告)号：JPS6313227A
公开(公告)日：1988-01-20
申请号：JP15626586
申请日：1986-07-04
Applicant: CANON KK
Inventor： TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: PURPOSE:To obtain a coarse resistance film of surface conductive electron emission elements with a simple process by forming an aluminum layer thicker than a Si layer and locally precipitating Si of the Si layer by means of heat treatment. CONSTITUTION:A SiO2 layer 12 is formed on a silicon substrate 11 by means of oxidation and the like, and a polycrystal Si layer 13 and an Al layer 14 thicker than the polycrystal Si layer 13 are formed thereon. Then, an Si area 16 is locally precipitated by heat treatment into A1 area 15 and after that, the A1 area 15 only is selectviely etched to form a coarse Si film so as to structure surface conductive electron emission elements. And, electric current is applied to the coarse resistance film 21 to emit electrons. Accordingly, a coarse Si film can he obtained with a simple process and silicification of work function reducing materials like alkaline metals is made easier, enabling to attempt the improvement of electron emission.
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公开(公告)号：JPS636718A
公开(公告)日：1988-01-12
申请号：JP14804786
申请日：1986-06-26
Applicant: CANON KK
Inventor： SUGATA MASAO , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SHIMODA ISAMU , OKUNUKI MASAHIKO
IPC: H01J1/312 , H01J1/30 , H01J1/304 , H01J1/308 , H01J1/316 , H01J3/08 , H01J3/18 , H01J3/30 , H01J37/06 , H01J37/073
Abstract: PURPOSE:To enable to start or stop electron emission quickly and exactly, by mounting the first and the second electrodes respectively on the forward and backward sides of electron-emitting elements and applying voltages to these electrodes to make the elements emit electrons, while the first electrode is ring-shaped and divided into the plural number of pieces to apply an independent voltage to each of them. CONSTITUTION:An insulating film 6 is formed on a substrate 2 of glass or the like, and then a p-type semiconductor layer 8 and a n-type semiconductor layer 10 are laminated thereon. In the central part of the layers, an inverse cone-shaped hole 11 is bored to form a lower electrode 4 on the exposed surface of the substrate 2. Successively, the layers 8 and 10 facing the hole 11 are changed to p and n types, and then the surface of the layer 10 is covered with an insulating layer 14, whereon upper electrodes are formed approximately in a ring shape and divided into electrodes 16-1 to 16-4. The layers 8 and 10 are then connected with a source 12 for application of inversely biased voltage, and individual sources 20-1 to 20-4 are connected between the electrodes 16-1 to 16-4 and the layer 10 respectively. Thus, electron emission is exactly started/ stopped and the energy is effectively controlled.
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公开(公告)号：JPS632229A
公开(公告)日：1988-01-07
申请号：JP14473586
申请日：1986-06-23
Applicant: CANON KK
Inventor： KAN FUMITAKA , NAKAMURA KENJI , TAKENOUCHI MASANORI , HAYAKAWA NAOJI , SHIMODA ISAMU , OKUNUKI MASAHIKO
IPC: G09G1/20 , G09G1/26 , G11C11/401 , H01J1/30 , H01J29/04 , H01L21/8247 , H01L27/115
Abstract: PURPOSE:To obtain sufficient brightness without need for a complicated XY matrix drive circuit, by making transfer shift of image information between memory elements which have means of driving an electron beam source and an electron beam detecting means. CONSTITUTION:If an electron beam enters an electron detecting means D, electric charge is once stored in this electron beam detecting means D. When the electric charge is transferred to a driving means T to turn it on, an electron beam source E is driven to emit an electron beam corresponding to the electric charge stored in the electron beam detecting means. For example, 2 units of such a memory element are arranged to deflect the emitted electron beam by the effect of electric field and magnetic field and to make it enter the electron beam detecting means area of a different memory element, in order to perform 2-dimensional transfer of image information. Because the trajectory of the electron beqam depends on the intensity of magnetic field, the electron beam can be transferred to a desired memory element by selecting proper magnetic field intensity. Thus above-mentioned shifting operation enables to obtain a function equivalent to that of an XY matrix drive circuit.
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公开(公告)号：JPS63950A
公开(公告)日：1988-01-05
申请号：JP14138986
申请日：1986-06-19
Applicant: CANON KK
Inventor： OKUNUKI MASAHIKO , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU
IPC: H01J37/073 , H01J1/316 , H01J3/02 , H01J37/06 , H01L21/027
Abstract: PURPOSE:To make it possible to expose electron beams continuously in a two-dimensional pattern, by arranging plural slender electron emitting elements extended in the first direction, and the neighboring elements shifted in the second direction to cross the first direction. CONSTITUTION:An electron emitting element 4 is formed on a base plate 2 with a high resistance membrane 6 slender in the B-B direction, and electrodes 8 and 9 at the both ends of the membrane 6, over which electrodes 12 and 13 are furnished through an insulating layer 10. While plural elements 4 are arranged at an interval in the B-B direction, the neighboring line of elements 4 are arranged by shifting their positions between the intervals of the original line, and an electron emitting device for an electron beam exposing device or the like is composed. Then, a power source 14 is driven selectively to emit electrons from the electron beam emitting elements 14. Therefore, the electron beams can be emitted at a preferable time from preferable elements 14 while a subject to process 18 is moved, and a continuous two-dimensional pattern of electrons can be exposed.
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