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公开(公告)号:US11662523B2
公开(公告)日:2023-05-30
申请号:US17151955
申请日:2021-01-19
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Roderick A. Augur , Kenneth J. Giewont , Karen Nummy
CPC classification number: G02B6/305 , G02B6/0046 , G02B6/4298 , G02B6/12002 , G02B6/12004 , G02B2006/12147
Abstract: Structures including an edge coupler and methods of forming a structure including an edge coupler. The structure includes a waveguide core over a dielectric layer and a back-end-of-line stack over the dielectric layer and the waveguide core. The back-end-of-line stack includes a side edge and a truncated layer that is overlapped with a tapered section of the waveguide core. The truncated layer has a first end surface adjacent to the side edge and a second end surface above the tapered section of the waveguide core. The truncated layer is tapered from the first end surface to the second end surface.
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公开(公告)号:US11656409B2
公开(公告)日:2023-05-23
申请号:US17197133
申请日:2021-03-10
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Qizhi Liu
Abstract: Embodiments of the disclosure provide an optical antenna for a photonic integrated circuit (PIC). The optical antenna includes a semiconductor waveguide on a semiconductor layer. The semiconductor waveguide includes a first vertical sidewall over the semiconductor layer over the semiconductor layer. A plurality of grating protrusions extends horizontally from the first vertical sidewall of the semiconductor waveguide.
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公开(公告)号:US20230130467A1
公开(公告)日:2023-04-27
申请号:US17452129
申请日:2021-10-25
Applicant: GlobalFoundries U.S. Inc.
Inventor: Nicholas A. Polomoff , Thomas Houghton , Yusheng Bian
Abstract: A photonic integrated circuit (PIC) die are provided. The PIC die includes a set of optical connect grooves including a first groove aligning a core of a first optical fiber positioned with a first optical component in a first layer at a first vertical depth in a plurality of layers of a body of the die, and a second groove aligning a core of a second optical fiber positioned therein with a second optical component in a second, different layer at a second different vertical depth in the plurality of layers. The grooves may also have end faces at different lateral depths from an edge of the body of the PIC die. Any number of the first and second grooves can be used to communicate an optical signal to any number of layers at different vertical and/or lateral depths within the body of the PIC die.
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公开(公告)号:US20230113261A1
公开(公告)日:2023-04-13
申请号:US17450324
申请日:2021-10-08
Applicant: GlobalFoundries U.S. Inc.
Inventor: Roderick Alan Augur , Yusheng Bian , Robert John Fox, III
IPC: H01L23/532 , H01L23/522 , H01L23/552
Abstract: A photonic integrated circuit (PIC) die includes a silicon nitride optical component over an active region. Multiple interconnect layers are over the silicon nitride optical component, each of the multiple interconnect layers including a metal interconnect therein. At least one optical deflector is over the multiple interconnect layers and over the silicon nitride optical component. The optical deflector(s) may also include a contact passing therethrough to the interconnect layers, but do not include any other electrical interconnects. Each optical deflector may deflect light within an ambient light range of less than 570 nanometers (nm) to protect the silicon nitride optical component from light-induced degradation.
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公开(公告)号:US11609475B2
公开(公告)日:2023-03-21
申请号:US17119042
申请日:2020-12-11
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor: Michal Rakowski , Yusheng Bian , Won Suk Lee , Roderick A. Augur
IPC: G02F1/225
Abstract: Embodiments of the disclosure provide an optical ring modulator. The optical ring modulator includes waveguide with a first semiconductor material of a first doping type, and a second semiconductor material having a second doping type adjacent the first semiconductor material. A P-N junction is between the first semiconductor material and the second semiconductor material. A plurality of photonic crystal layers, each embedded within the first semiconductor material or the second semiconductor material, has an upper surface that is substantially coplanar with an upper surface of the waveguide structure.
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公开(公告)号:US20230067304A1
公开(公告)日:2023-03-02
申请号:US17411122
申请日:2021-08-25
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Roderick A. Augur
Abstract: Disclosed is a photonic integrated circuit (PIC) structure including: a first waveguide with a first main body and a first end portion, which is tapered; and a second waveguide with a second main body and a second end portion, which has two branch waveguides that are positioned adjacent to opposing sides, respectively, of the first end portion of the first waveguide and that branch out from the second main body, thereby forming a V, U or similar shape. The arrangement of the two branch waveguides of the second end portion of the second waveguide relative to the tapered first end portion of the first waveguide allows for mode matching conditions to be met at multiple locations at the interface between the waveguides, thereby creating multiple signal paths between the waveguides and effectively reducing the light signal power density along any one path to prevent or at least minimize any power-induced damage.
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公开(公告)号:US11592617B2
公开(公告)日:2023-02-28
申请号:US17193379
申请日:2021-03-05
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Ajey Poovannummoottil Jacob
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to non-planar waveguide structures and methods of manufacture. The structure includes: a first waveguide structure; and a non-planar waveguide structure spatially shifted from the first waveguide structure and separated from the first waveguide structure by an insulator material.
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公开(公告)号:US11588062B2
公开(公告)日:2023-02-21
申请号:US17065839
申请日:2020-10-08
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Abdelsalam Aboketaf , Yusheng Bian
IPC: H01L31/0352 , H01L31/0232 , H01L31/18 , H01L31/102
Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. A photodetector includes a photodetector pad coupled to a waveguide core and a light-absorbing layer coupled to the photodetector pad. The light-absorbing layer has a body, a first taper that projects laterally from the body toward the waveguide core, and a second taper that projects laterally from the body toward the waveguide core. The photodetector pad includes a tapered section that is laterally positioned between the first taper and the second taper of the light-absorbing layer.
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公开(公告)号:US11567277B1
公开(公告)日:2023-01-31
申请号:US17472846
申请日:2021-09-13
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Mark Levy , Siva P. Adusumilli
Abstract: Structures that include a distributed Bragg reflector and methods of fabricating a structure that includes a distributed Bragg reflector. The structure includes a substrate, an optical component, and a distributed Bragg reflector positioned between the optical component and the substrate. The distributed Bragg reflector includes airgaps and silicon layers that alternate in a vertical direction with the airgaps to define a plurality of periods.
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公开(公告)号:US11567260B1
公开(公告)日:2023-01-31
申请号:US17501508
申请日:2021-10-14
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Yusheng Bian , Won Suk Lee , Lin Jiang , Colleen Meagher
IPC: G02B6/122 , G02B6/36 , H01L31/0232
Abstract: Structures including an optical component and methods of forming a structure including an optical component. The structure includes an optical component on a substrate, and a back-end-of-line stack including multiple metal levels. Each of the metal levels includes a dielectric layer and metal features positioned over the optical component as metal fill in the dielectric layer. The metal features in at least two of the metal levels are arranged to overlap such that the optical component is fully covered normal to the substrate.
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