INVERTED POSITIVE VERTICAL FLOW CHEMICAL VAPOR DEPOSITION REACTOR CHAMBER
    141.
    发明申请
    INVERTED POSITIVE VERTICAL FLOW CHEMICAL VAPOR DEPOSITION REACTOR CHAMBER 审中-公开
    反相积极垂直流动化学蒸气沉积反应器室

    公开(公告)号:WO1984004334A1

    公开(公告)日:1984-11-08

    申请号:PCT/US1983001139

    申请日:1983-07-22

    CPC classification number: C23C16/45582 C30B25/08 C30B25/14

    Abstract: A chemical vapor deposition (CVD) reactor system comprising a substantially vertical reactor tube (14) having a gas inlet (22) and a gas outlet (28), a pedestal (40) mounted within the reactor tube (14) having means (46, 54, 56) for securing a substrate (50) thereto so that a surface of the substrate (50) is exposed downward, and means for providing a gas mixture (24) to the reactor tube (14), the gas mixture (24) being introduced into the reactor tube (14) via the gas inlet (22) and subsequently withdrawn via the gas outlet (28), the gas inlet (22) and outlet (24) being positioned, with respect to the substrate (50), below and above, respectively. The gas mixture (24) is maintained in substantially uniform plug flow as it is directed into close proximity to the exposed surface of the substrate (50). This permits the CVD growth of physically uniform layers, both in terms of thickness and composition, having low contamination concentrations over large substrate surface areas.

    Abstract translation: 一种化学气相沉积(CVD)反应器系统,包括具有气体入口(22)和气体出口(28)的基本垂直的反应器管(14),安装在反应器管(14)内的基座(40),具有装置 ,54,56),用于将基板(50)固定到其上,使得所述基板(50)的表面向下暴露;以及用于将气体混合物(24)提供给所述反应器管(14)的装置,所述气体混合物(24) )经由气体入口(22)引入反应器管(14)中,然后经由气体出口(28)排出,气体入口(22)和出口(24)相对于基底(50)定位, ,以下及以上。 气体混合物(24)被引导为紧邻基底(50)的暴露表面时保持基本均匀的塞子流。 这允许在厚度和组成方面物理上均匀的层的CVD生长,在大的衬底表面区域具有低污染浓度。

    TETRAMETHYLTIN DOPANT SOURCE FOR MOCVD GROWN EPITAXIAL SEMICONDUCTOR LAYERS
    142.
    发明申请
    TETRAMETHYLTIN DOPANT SOURCE FOR MOCVD GROWN EPITAXIAL SEMICONDUCTOR LAYERS 审中-公开
    用于MOCVD的外延半导体层的四氯乙烯氘源

    公开(公告)号:WO1984003905A1

    公开(公告)日:1984-10-11

    申请号:PCT/US1984000403

    申请日:1984-03-15

    CPC classification number: C30B25/02 C30B29/40 C30B29/46

    Abstract: A metal-organic transport compound that permits the growth of readily reproducible tin doped or alloyed epitaxial layers. In a MOCVD reactor system, a process is performed involving the epitaxial deposition of a layer of a semiconductor material, including a given elemental species, onto a semiconductor substrate maintained within the MOCVD reactor chamber. The element species is obtained from the decomposition of a vapor-phase organo-metallic compound consisting essentially of tetramethyltin.

    SQUARE CONDUCTOR COAXIAL COUPLER
    143.
    发明申请
    SQUARE CONDUCTOR COAXIAL COUPLER 审中-公开
    方形导体同轴耦合器

    公开(公告)号:WO1984003395A1

    公开(公告)日:1984-08-30

    申请号:PCT/US1983001991

    申请日:1983-12-16

    CPC classification number: H01P5/183

    Abstract: A transverse electromagnetic mode hybrid coupler (10) for coaxial lines is formed within a metal plate (12) by milling out channels (16) of square cross-section. The walls of the channels serve as outer conductors; inner conductors (18, 19) of square cross-section are positioned within the channels. A diagonally disposed separator (34) includes a window and crosses the intersection of the coupler ports (21, 22, 23 and 24). The central conductors of the respective coaxial lines are joined by diagonally disposed segments of inner conductor such that each pair of coaxial lines is so joined. Each pair of lines provides a pair of ports. The line segments are spaced apart by a spring-loaded separator for rigidly maintaining a coupling distance. This design provides improved impedance matching and reliable coupling in both amplitude and phase over a wide spectral band.

    Abstract translation: 通过铣削具有正方形横截面的通道(16),在金属板(12)内形成用于同轴线的横向电磁模式混合耦合器(10)。 通道的墙壁用作外导体; 正方形横截面的内导体(18,19)位于通道内。 对角设置的分离器(34)包括窗口并且穿过联接器端口(21,22,23和24)的交叉。 各个同轴线的中心导体通过内部导体的对角设置的段连接,使得每对同轴线如此连接。 每对线路提供一对端口。 线段由弹簧加载的分离器间隔开,用于刚性地保持联接距离。 该设计提供了在宽光谱带上的幅度和相位上的改进的阻抗匹配和可靠的耦合。

    RESOLUTION ENHANCEMENT AND ZOOM
    144.
    发明申请
    RESOLUTION ENHANCEMENT AND ZOOM 审中-公开
    分辨率增强和变焦

    公开(公告)号:WO1984002990A2

    公开(公告)日:1984-08-02

    申请号:PCT/US1984000117

    申请日:1984-01-25

    CPC classification number: H04N5/208

    Abstract: The resolution is enhanced first by effectively decreasing the scan angle subtended between adjacent samples significantly below that of the Rayleigh limit to obtain an image blurred by the point spread function (or diffraction pattern) of the aperture. The next step is to process this blurred image at least to partially remove the blur. The unblurring process consists of correlating each small segment of the blurred image with blurred images of preconstructed image primitives and then synthesizing a new image comprising a mosaic of spatially correlated original (unblurred ) primitives. The blurred images of the primitives are obtained from a complete set of image primitives comprising, ideally, all possible unblurred primitive shapes. These primitives are then blurred by convolution with the point spread function of the aperture of the imager.

    Abstract translation: 首先通过有效地降低相邻样品之间的扫描角度显着低于瑞利极限,从而获得由孔径的点扩散函数(或衍射图案)模糊的图像,从而增强分辨率。 下一步是处理这个模糊的图像至少部分地去除模糊。 不完整的过程包括将模糊图像的每个小片段与预构图图像原语的模糊图像相关联,然后合成包含空间相关的原始(未修饰)原语的马赛克的新图像。 原始图像的模糊图像从完整的图像原语集合获得,其包括理想地所有可能的未平坦化的原始形状。 然后通过与成像器孔径的点扩散函数的卷积来模糊这些图元。

    THERMAL STABILISATION OF NEGATIVE CONDUCTANCE SEMICONDUCTOR DEVICES
    146.
    发明申请
    THERMAL STABILISATION OF NEGATIVE CONDUCTANCE SEMICONDUCTOR DEVICES 审中-公开
    负极导体半导体器件的热稳定性

    公开(公告)号:WO1984001243A1

    公开(公告)日:1984-03-29

    申请号:PCT/US1983001384

    申请日:1983-09-12

    CPC classification number: H03F1/30 H03B9/12 H03L1/021

    Abstract: A bias network (44) having at least two or more selectable bias levels is used to drive a negative conductance semiconductor device (18) in a pulse mode. When a first bias level is selected (40), the semiconductor device (18) dissipates substantially all of the energy provided to it as heat. When a second bias level is selected (42), the semiconductor device (18) radiates a portion of the energy provided to it as electromagnetic energy (20), generally of microwave frequencies. Appropriate selection of bias levels allows the device to be either thermally conditioned directly or operated as a microwave frequency electromagnetic energy source. The selection of bias levels may be dynamically altered so as to change pulse rate frequency, pulse duration, and the degree of thermal conditioning with respect to each pulse.

    Abstract translation: 具有至少两个或更多个可选偏置电平的偏置网络(44)用于以脉冲模式驱动负电导半导体器件(18)。 当选择第一偏置电平(40)时,半导体器件(18)基本上以热量散发提供给它的所有能量。 当选择第二偏置电平(42)时,半导体器件(18)将提供给它的能量的一部分辐射为通常为微波频率的电磁能(20)。 适当选择偏置电平允许器件直接进行热调节或作为微波频率电磁能源操作。 可以动态地改变偏置电平的选择,以改变脉冲频率频率,脉冲持续时间以及相对于每个脉冲的热调节程度。

    METHOD FOR FABRICATING CORRUGATED MICROWAVE COMPONENTS
    147.
    发明申请
    METHOD FOR FABRICATING CORRUGATED MICROWAVE COMPONENTS 审中-公开
    用于制造腐蚀性微波组件的方法

    公开(公告)号:WO1984001058A1

    公开(公告)日:1984-03-15

    申请号:PCT/US1983001371

    申请日:1983-09-01

    Abstract: In the disclosed method for fabricating corrugated microwave components, a billet assembly is formed of electrically conductive plates (10) sandwitched with chemical etching sensitive spacer material (20) and clamped together (30 and 31). An inside surface (40) is formed in the billet and a mandrel (50) inserted. An outer contoured surface (55) is then formed on the mandrel-billet assembly. The outer surface is then plated (60) to a desired thickness. The mandrel (50) is removed and the spacers (20) chemically etched away leaving the finished component. With the disclosed method, microwave device fabrication for frequencies including 100 GHz and higher is possible.

    Abstract translation: 在所公开的用于制造波纹微波部件的方法中,坯料组件由夹在化学蚀刻敏感间隔物材料上并夹在一起的导电板形成。 在坯料中形成内表面并插入心轴。 然后在心轴 - 坯料组件上形成外部轮廓表面。 然后将外表面电镀到期望的厚度。 去除心轴,并将间隔物化学蚀刻掉离开成品组件。 利用所公开的方法,可以使用包括100GHz及更高​​频率的微波器件制造。

    AGILE BEAM LASER
    148.
    发明申请
    AGILE BEAM LASER 审中-公开
    AGILE光束激光

    公开(公告)号:WO1983004145A1

    公开(公告)日:1983-11-24

    申请号:PCT/US1983000559

    申请日:1983-04-14

    CPC classification number: H01S3/10076 H01S3/101

    Abstract: A laser system for providing a rapidly steerable laser output beam. The laser system includes a phase conjugate reflector (21), laser gain medium (22) and its associated pump source (23), an output coupling device (24), and an optical element (25) which selectably controls the transverse lasing mode of the laser system. The components are arranged to form a laser oscillator between the phase conjugate reflector and the optical device, and is operated in such a manner that each selected transverse mode of laser operation generates an output beam from the system which has a different wavefront tilt. Accordingly, the output beam is steerable and is dependent upon the selected transverse mode which is currently lasing in the oscillator.

    IMPROVED RADIO FREQUENCY LASER PUMPING SYSTEM
    149.
    发明申请
    IMPROVED RADIO FREQUENCY LASER PUMPING SYSTEM 审中-公开
    改进的射频激光泵送系统

    公开(公告)号:WO1983003927A1

    公开(公告)日:1983-11-10

    申请号:PCT/US1983000677

    申请日:1983-05-02

    CPC classification number: H01S3/097 H01S3/09702 H01S3/0975

    Abstract: Improved laser power supply designed to provide the high electric field required for starting a laser. This invention has the capability of automatically readjusting after laser action is initiated to provide an optimum impedance match for high efficiency energy transfer. As shown in (Fig. 1), the invention includes variable means (21) for matching the impedance of a laser cavity (14) with a source of RF energy (12). In addition, means (16) are provided for sensing a change in the impedance of the laser cavity. The additional circuitry (32-46) utilizes the sensed change to vary the impedance of the matching elements (50 & 52) to provide and maintain an optimal coupling between the laser cavity (14) and the RF source (12).

    Abstract translation: 改进的激光电源,旨在提供启动激光所需的高电场。 本发明具有在开始激光作用之后自动重新调整的能力,为高效能量传递提供最佳的阻抗匹配。 如图1所示,本发明包括用于将激光腔(14)的阻抗与RF能量源(12)匹配的可变装置(21)。 另外,提供了用于感测激光腔的阻抗变化的装置(16)。 附加电路(32-46)利用感测到的变化来改变匹配元件(50和52)的阻抗,以提供并保持激光腔(14)和RF源(12)之间的最佳耦合。

    TERMINALLY GUIDED WEAPON DELIVERY SYSTEM
    150.
    发明申请
    TERMINALLY GUIDED WEAPON DELIVERY SYSTEM 审中-公开
    终端指导武器交付系统

    公开(公告)号:WO1983003894A1

    公开(公告)日:1983-11-10

    申请号:PCT/US1983000585

    申请日:1983-04-21

    CPC classification number: F42B10/661 F41G7/305

    Abstract: A command guidance weapon system (11) comprising a radar target tracking system (15), and a weapon (16) with small thrusters (41-46) mounted on the periphery thereof and such weapon (16) having a small beacon transmitter which is tracked by a ground-based angle measurement device (13). A rapid terminal manoeuvre is executed by the weapon at an appropriate point (31) in the trajectory of the weapon (16) by sequentially firing the small thrusters. The angular orientation of the weapon (16) is obtained by canting a polarized antenna (25), located on the rear of the weapon (16), with respect to the longitudinal axis (60) of the weapon (16) so that the signal transmitted from the weapon (16) to the ground-based fire control system (11) is modulated. The fire control system (11) computes the precise time, based upon the angular orientation of the weapon (16) and the distance between the weapon (16) and the target (20, 21, 22), to initiate the terminal manoeuvre by the weapon (16), and sends a command signal to the weapon (16).

    Abstract translation: 一种包括雷达目标跟踪系统(15)的命令指导武器系统(11)和安装在其周边上的具有小推进器(41-46)的武器(16-),并且具有小型信标发射机的武器(16) 由地面角度测量装置(13)跟踪。 武器在武器(16)的轨迹上的适当点(31)处通过顺序地点燃小推进器来执行快速终端机动。 武器(16)的角度取向通过相对于武器(16)的纵向轴线(60)倾斜位于武器(16)的后部上的极化天线(25)而获得,使得信号 从武器(16)传送到基于地面的火情控制系统(11)被调制。 消防控制系统(11)基于武器(16)的角度方向和武器(16)与目标(20,21,22)之间的距离来计算精确时间,以通过所述武器 武器(16),并向武器(16)发送命令信号。

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