中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

4082 records (took 0.052 seconds)

    Frame specification for a wireless network communication
    141.
    发明公开
    Frame specification for a wireless network communication 审中-公开
    无线网络通信的帧规范

    公开(公告)号：EP2723121A2

    公开(公告)日：2014-04-23

    申请号：EP13188855.4

    申请日：2013-10-16

    Applicant: STMicroelectronics, Inc.

    Inventor： Chu, Liwen ,  Vlantis, George A.

    IPC: H04W28/06

    CPC classification number: H04B7/15528 ,  H04W28/065

    Abstract: A compressed header format is used for messages transmitted in a wireless network. The compressed header includes a first address field and a frame control field including at least one bit specifying whether the first address is for an access point of the wireless communications network. The frame control field may further include at least one additional bit identifying whether the frame is being relayed by a relay node positioned between the access point and a wireless station. The frame control field may further include at least one further bit identifying whether AID is used for the first address field.

    Abstract translation: 压缩报头格式用于在无线网络中传输的消息。 压缩报头包括第一地址字段和帧控制字段，帧控制字段包括指定第一地址是否用于无线通信网络的接入点的至少一个比特。 帧控制字段可以进一步包括标识该帧是否被位于接入点和无线站之间的中继节点中继的至少一个附加比特。 帧控制字段可以进一步包括标识AID是否被用于第一地址字段的至少一个另外的比特。

    Finfet device with silicided source-drain regions and method of making same using a two step anneal
    142.
    发明公开
    Finfet device with silicided source-drain regions and method of making same using a two step anneal 审中-公开
    FinFET器件具有硅化源 - 漏区，并通过两步骤退火的手段制造其的方法

    公开(公告)号：EP2722893A1

    公开(公告)日：2014-04-23

    申请号：EP13188852.1

    申请日：2013-10-16

    Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics, Inc.

    Inventor： Morin, Pierre ,  Beneyton, Remi

    IPC: H01L29/78 ,  H01L21/285 ,  H01L29/66 ,  H01L29/417

    CPC classification number: H01L29/665 ,  H01L21/28518 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7845

    Abstract: A thermal annealing flow process includes the steps of: depositing a metal or metal alloy on a silicon semiconductor structure, performing a first annealing of a rapid thermal anneal (RTA) type to produce a metal rich phase in a portion of the silicon semiconductor structure, removing unreacted metal or metal alloy and performing a second annealing as a millisecond annealing at a temperature that is below a melt temperature of the silicon material present in the silicon semiconductor structure.

    Abstract translation: 热退火流动过程包括以下步骤：沉积金属或金属合金上的硅的半导体结构，执行快速热退火（RTA）的第一退火键入在硅半导体结构的一部分，以产生富金属相， 除去未反应的金属或金属合金，并且作为在温度一毫秒退火做执行第二退火低于存在于硅半导体结构的硅材料的熔融温度。

    Presence detection device
    146.
    发明公开
    Presence detection device 审中-公开
    Präsenzerkennungsvorrichtung

    公开(公告)号：EP2624172A1

    公开(公告)日：2013-08-07

    申请号：EP12305132.8

    申请日：2012-02-06

    Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics, Inc.

    Inventor： Coulon, David ,  Winterton, Darin

    IPC: G06K9/20 ,  G06F3/01

    CPC classification number: H04N5/23296 ,  G06F3/017 ,  G06K9/209 ,  Y10T29/41

    Abstract: The invention concerns a user presence detection device having: a camera module (102) with a silicon-based image sensor (108) adapted to capture an image; and a processing device (104) configured to process said image to detect the presence of a user, wherein the camera module further comprises a light filter (107) having a lower cut-off wavelength of between 550 nm and 700 nm.

    Abstract translation: 本发明涉及一种用户存在检测装置，其具有：具有适于捕获图像的硅基图像传感器（108）的相机模块（102） 以及处理装置（104），被配置为处理所述图像以检测用户的存在，其中所述相机模块还包括具有550nm和700nm之间的较低截止波长的滤光器（107）。

Patent Agency Ranking