公开(公告)号：US08097483B2

公开(公告)日：2012-01-17

申请号：US12682000

申请日：2008-10-15

Applicant: Robertus T. F. Van Schaijk ,  Piebe Anne Zijlstra ,  Ronald Koster ,  Pieter Simon Van Dijk

Inventor： Robertus T. F. Van Schaijk ,  Piebe Anne Zijlstra ,  Ronald Koster ,  Pieter Simon Van Dijk

IPC: H01L21/00

CPC classification number: B81C1/0015 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81C2201/0107 ,  H01G5/16 ,  H01G13/00

Abstract: Method for manufacturing a capacitor on a substrate, the capacitor including a first electrode (5) and a second electrode (12; 25), the first and second electrodes being separated by a cavity (16; 32), the substrate including an insulating surface layer (3), the first electrode (5) being arranged on the insulating surface layer a first metal body (7a; 20) being adjacent to the first electrode and arranged as anchor of the second electrode (12; 25) the second electrode being arranged as a beam-shaped body (12; 25) located on the first metal body and above the first electrode; the cavity (16; 32) being laterally demarcated by a sidewall of the first metal body.

Abstract translation: 在基板上制造电容器的方法，所述电容器包括第一电极（5）和第二电极（12; 25），所述第一和第二电极由空腔（16; 32）分开，所述基板包括绝缘表面 层（3），所述第一电极（5）在所述绝缘表面层上布置有与所述第一电极相邻并且被布置为所述第二电极（12; 25）的锚定件的第一金属体（7a; 20），所述第二电极为 被布置为位于所述第一金属体上并位于所述第一电极上方的梁状体（12; 25）; 空腔（16; 32）由第一金属体的侧壁横向划分。

公开(公告)号：US20100264498A1

公开(公告)日：2010-10-21

申请号：US12682000

申请日：2008-10-15

Applicant: Robertus T. F. Van Schaijk ,  Piebe Anne Zijlstra ,  Ronald Koster ,  Pieter Simon Van Dijk

Inventor： Robertus T. F. Van Schaijk ,  Piebe Anne Zijlstra ,  Ronald Koster ,  Pieter Simon Van Dijk

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/0015 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81C2201/0107 ,  H01G5/16 ,  H01G13/00

Abstract: Method for manufacturing a capacitor on a substrate, the capacitor including a first electrode (5) and a second electrode (12; 25), the first and second electrodes being separated by a cavity (16; 32), the substrate including an insulating surface layer (3), the first electrode (5) being arranged on the insulating surface layer a first metal body (7a; 20) being adjacent to the first electrode and arranged as anchor of the second electrode (12; 25) the second electrode being arranged as a beam-shaped body (12; 25) located on the first metal body and above the first electrode; the cavity (16; 32) being laterally demarcated by a sidewall of the first metal body.

Abstract translation: 在基板上制造电容器的方法，所述电容器包括第一电极（5）和第二电极（12; 25），所述第一和第二电极由空腔（16; 32）分开，所述基板包括绝缘表面 层（3），所述第一电极（5）在所述绝缘表面层上布置有与所述第一电极相邻并且被布置为所述第二电极（12; 25）的锚定件的第一金属体（7a; 20），所述第二电极为 被布置为位于所述第一金属体上并位于所述第一电极上方的梁状体（12; 25）; 空腔（16; 32）由第一金属体的侧壁横向划分。

公开(公告)号：US20100213068A1

公开(公告)日：2010-08-26

申请号：US12706566

申请日：2010-02-16

Applicant: Christopher A. Bang

Inventor： Christopher A. Bang

IPC: C25D1/00

CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFAB™ formation process), and typically contain features having resolutions within the 1 to 100 μm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and hardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

Abstract translation: 提供了模制结构，制造模制结构的方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其他模具部件组合，并将模塑材料注入模具中并硬化。 层压结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。

公开(公告)号：US20090234425A1

公开(公告)日：2009-09-17

申请号：US12296519

申请日：2007-01-26

Applicant: Hans-Jurgen Tiedtke

Inventor： Hans-Jurgen Tiedtke

IPC: A61N1/05 ,  B05D3/00 ,  C23C14/34 ,  B32B15/00

CPC classification number: A61N1/05 ,  A61N1/0543 ,  A61N1/0551 ,  B81C99/008 ,  B81C2201/0107 ,  B81C2201/0181 ,  Y10T428/12493

Abstract: The object, to create a method for producing multilayers or multilayer systems wherein the structures generated on a substrate can easily be jointly detached from the substrate and are preserved in a composite, is achieved by the present invention by means of a method for producing implant structures comprising generating a first metal layer on a substrate, generating a second metal layer above the first metal layer, producing a number of multilayered implant structures above the second metal layer, removing the first metal layer between the substrate and the second metal layer, and releasing the implant structures from the substrate in a coherent composite. With the method according to the invention, between the implant structures and the substrate a release layer is generated consisting of two or three metal layers which serve as sacrificial layer in the course of releasing the fully processed multilayers by means of an under-etching process. As a result, a uniform and reliable separation of the finished multilayers from the substrate in a composite is achieved, facilitating the subsequent technology for assembly and interconnection of the implant structures.

Abstract translation: 本发明的目的是为了产生多层或多层体系的制造方法，其中在衬底上产生的结构可以容易地与衬底共同分离并且被保存在复合材料中，这通过本发明通过生产植入结构的方法来实现 包括在衬底上产生第一金属层，在第一金属层上方产生第二金属层，在第二金属层之上产生多个多层植入结构，去除衬底和第二金属层之间的第一金属层，并释放 在相干复合材料中来自基底的植入物结构。 利用根据本发明的方法，在植入结构和衬底之间，产生剥离层，其由在蚀刻过程中释放完全处理的多层膜的过程中用作牺牲层的两个或三个金属层组成。 结果，实现了在复合材料中完成的多层与基底的均匀可靠的分离，有助于随后的用于植入结构的组装和互连的技术。

公开(公告)号：US07566939B2

公开(公告)日：2009-07-28

申请号：US11149921

申请日：2005-06-10

Applicant: Michel Despont ,  Roy H. Magnuson ,  Ute Drechsler

Inventor： Michel Despont ,  Roy H. Magnuson ,  Ute Drechsler

IPC: H01L29/82

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising the material and a noble metal layer against undesired galvanic etching during manufacture, the method comprises forming on the structure a sacrificial metal layer having a lower redox potential than the material, the sacrificial metal layer being electrically connected to the noble metal layer.

Abstract translation: 一种用于在制造期间保护包含该材料的微结构材料和贵金属层以防止不期望的电化学蚀刻的方法，所述方法包括在所述结构上形成具有比所述材料更低的氧化还原电位的牺牲金属层，所述牺牲金属层是电 连接到贵金属层。

公开(公告)号：US20080268575A1

公开(公告)日：2008-10-30

申请号：US11789578

申请日：2007-04-24

Applicant: Guillaume Bouche ,  Ralph N. Wall

Inventor： Guillaume Bouche ,  Ralph N. Wall

IPC: H01L21/78 ,  H01L21/302

CPC classification number: B81C1/0015 ,  B81B2201/014 ,  B81B2203/0384 ,  B81C1/00333 ,  B81C2201/0107 ,  B81C2201/0157 ,  B81C2203/0118

Abstract: In accordance with the present invention, accurate and easily controlled sloped walls may be formed using. AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.

Abstract translation: 根据本发明，可以使用精确且容易控制的倾斜壁来形成。 AlN，并且优选地是加热的TMAH，用于制造MEMS器件，晶片级封装和流体器件的制造。 公开了各种实施例。

公开(公告)号：US07411261B2

公开(公告)日：2008-08-12

申请号：US10773312

申请日：2004-02-09

Applicant: Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

Inventor： Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

IPC: H01L29/84

CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0107 ,  B81C2201/014 ,  H01H59/0009

Abstract: A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.

Abstract translation: 一种用于制造具有固定到基板上的固定部件，连接部件，驱动部件，驱动电极和接触部件的MEMS器件的方法，包括在所述基板上图形化所述驱动电极; 在所述基板上形成绝缘层; 图案化绝缘层并蚀刻绝缘层的固定区域和接触区域; 在衬底上形成金属层; 平坦化金属层直到绝缘层露出; 在所述基板上形成牺牲层; 图案化牺牲层以形成露出固定区域中绝缘层和金属层的一部分的开口; 在所述牺牲层上形成MEMS结构层以部分地填充所述开口，从而在其中形成侧壁; 并且通过蚀刻选择性地去除牺牲层的一部分，使得牺牲层的一部分保留在固定区域中。

公开(公告)号：US20080032501A1

公开(公告)日：2008-02-07

申请号：US11459307

申请日：2006-07-21

Applicant: Jonathan L. Klein ,  Jorg Pilchowski

Inventor： Jonathan L. Klein ,  Jorg Pilchowski

IPC: H01L21/44

CPC classification number: B81C1/00579 ,  B81C2201/0107 ,  B81C2201/014

Abstract: Micro-electromechanical systems (MEMS) pre-fabrication products and methods for forming MEMS devices using silicon-on-metal (SOM) wafers. An embodiment of a method may include the steps of bonding a patterned SOM wafer to a cover wafer, thinning the handle layer of the SOM wafer, selectively removing the exposed metal layer, and either continuing with final metallization or cover bonding to the back of the active layer.

Abstract translation: 微机电系统（MEMS）预制产品和使用金属硅（SOM）晶片形成MEMS器件的方法。 方法的一个实施例可以包括以下步骤：将图案化的SOM晶片结合到覆盖晶片，使SOM晶片的手柄层变薄，选择性地去除暴露的金属层，并且继续进行最后的金属化或覆盖粘合到 活动层

公开(公告)号：US07271022B2

公开(公告)日：2007-09-18

申请号：US11102982

申请日：2005-04-11

Applicant: Weilong Tang ,  Tseng-Yang Hsu ,  Salleh Ismail ,  Nim Hak Tea ,  Melvin B Khoo ,  Raffi Garabedian ,  Lakshimikanth Namburi

Inventor： Weilong Tang ,  Tseng-Yang Hsu ,  Salleh Ismail ,  Nim Hak Tea ,  Melvin B Khoo ,  Raffi Garabedian ,  Lakshimikanth Namburi

IPC: H01L21/00 ,  H01L21/4763

CPC classification number: B81C1/00436 ,  B81C1/00666 ,  B81C2201/0107 ,  B81C2201/0197

Abstract: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

Abstract translation: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射，以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂，并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分，然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案，以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域，但不包含整个基板。 相反，它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。

公开(公告)号：US20070199822A1

公开(公告)日：2007-08-30

申请号：US11621429

申请日：2007-01-09

Applicant: Christopher Bang

Inventor： Christopher Bang

IPC: C25D1/00

CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFAB™ formation process), and typically contain features having resolutions within the 1 to 100 μm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and hardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

Abstract translation: 提供了模制结构，制造模制结构的方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其他模具部件组合，并将模塑材料注入模具中并硬化。 层压结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。