PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

    公开(公告)号:US20240194450A1

    公开(公告)日:2024-06-13

    申请号:US17907857

    申请日:2021-06-28

    CPC classification number: H01J37/32201 H01J2237/327 H01L21/67069

    Abstract: A plasma processing device and method which allow control of a density ratio between ions and radicals, including a processing chamber, a radio frequency power supply which supplies microwave radio frequency power for plasma generation, a magnetic field generating mechanism which generates a magnetic field in the processing chamber, a sample stand disposed in the processing chamber, and a shielding plate disposed above the sample stand for shielding incidence of an ions onto the sample stand. The magnetic field generating mechanism includes a coil disposed around an outer periphery of the processing chamber, and a power supply connected to the coil. The mechanism allows a power supply of the magnetic field generating mechanism or the radio frequency power supply to control a plasma generating position with respect to the shielding plate, and to generate plasma by periodically changing the plasma generating position vertically with respect to the shielding plate.

    MICROWAVE PLASMA APPARATUS AND METHODS FOR PROCESSING MATERIALS USING AN INTERIOR LINER

    公开(公告)号:US20230377848A1

    公开(公告)日:2023-11-23

    申请号:US18320655

    申请日:2023-05-19

    Applicant: 6K Inc.

    Abstract: The embodiments disclosed herein are directed to systems, methods, and devices for processing a material using a microwave plasma apparatus with an interior liner. In some embodiments, the liner comprises a reduction resistant material layer in direct contact with a hydrogen-containing plasma of a plasma processing apparatus. In some embodiments, the liner may comprise a sleeve disposed between a plasma and one or more concentric tubes of a plasma processing apparatus. In some embodiments, the liner may comprise a coating of material applied to the one or more concentric tubes. In some embodiments, the liner may comprise a flexible ceramic material, such as a ceramic ribbon that is coiled or wrapped in a helix shape spiraling around the interior of the one or more concentric tubes.

    APPARATUS FOR TREATING SUBSTRATE
    143.
    发明公开

    公开(公告)号:US20230207272A1

    公开(公告)日:2023-06-29

    申请号:US18056046

    申请日:2022-11-16

    CPC classification number: H01J37/32201 H01J37/3244 H01J37/32229

    Abstract: An exemplary embodiment of the present invention provided an apparatus for treating a substrate. The apparatus for treating the substrate includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate the microwaves to the treating space, a first waveguide disposed above the transmission plate, and a first power supply for applying the microwaves to the first waveguide, wherein the first waveguide is provided in a ring shape.

    PLASMA PROCESSING APPARATUS
    149.
    发明申请

    公开(公告)号:US20180114677A1

    公开(公告)日:2018-04-26

    申请号:US15793856

    申请日:2017-10-25

    Abstract: A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.

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