公开(公告)号：US09818912B2

公开(公告)日：2017-11-14

申请号：US14934482

申请日：2015-11-06

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Lunev ,  Alexander Dobrinsky ,  Maxim S. Shatalov ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/40 ,  H01L33/32 ,  H01L33/42 ,  H01L33/24 ,  H01L33/38 ,  H01L33/46

CPC classification number: H01L33/405 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46

Abstract: A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.

公开(公告)号：US20170317003A1

公开(公告)日：2017-11-02

申请号：US15645321

申请日：2017-07-10

Applicant: Sensor Electronic Technology, Inc.

Inventor： Yuri Bilenko ,  Michael Shur ,  Remigijus Gaska

IPC: H01L23/367 ,  H01L33/38 ,  H01L33/64 ,  H01L33/20

CPC classification number: H01L23/367 ,  H01L33/20 ,  H01L33/38 ,  H01L33/642 ,  H01L2224/16

Abstract: A thermal management structure for a device is provided. The thermal management structure includes electroplated metal, which connects multiple contact regions for a first contact of a first type located on a first side of the device. The electroplated metal can form a bridge structure over a contact region for a second contact of a second type without contacting the second contact. The thermal management structure also can include a layer of insulating material located on the contact region of the second type, below the bridge structure.

公开(公告)号：US09801965B2

公开(公告)日：2017-10-31

申请号：US14686004

申请日：2015-04-14

Applicant: Sensor Electronic Technology, Inc.

Inventor： Timothy James Bettles ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10

CPC classification number: A61L2/10 ,  A61L2202/14 ,  A61L2202/16

Abstract: A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.

公开(公告)号：US20170299826A1

公开(公告)日：2017-10-19

申请号：US15633103

申请日：2017-06-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: G02B6/42 ,  G02B6/122 ,  G02B6/136 ,  G02B6/10 ,  G02B6/34 ,  G02B6/12 ,  F21V8/00

CPC classification number: G02B6/4239 ,  G02B6/0096 ,  G02B6/102 ,  G02B6/1225 ,  G02B6/136 ,  G02B6/34 ,  G02B6/4204 ,  G02B2006/12035 ,  G02B2006/12104

Abstract: A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.

公开(公告)号：US20170263805A1

公开(公告)日：2017-09-14

申请号：US15588896

申请日：2017-05-08

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/105 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/002 ,  H01L31/022408 ,  H01L31/035236 ,  H01L31/105 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/04 ,  H01L33/145 ,  H01L33/32 ,  H01L2933/0008

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

公开(公告)号：US09750830B2

公开(公告)日：2017-09-05

申请号：US14012652

申请日：2013-08-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: A61L9/20 ,  F24F3/16 ,  A61L2/10

CPC classification number: A61L2/10 ,  A61L2202/14

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.

公开(公告)号：US09748362B2

公开(公告)日：2017-08-29

申请号：US14984408

申请日：2015-12-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/40 ,  H01L29/778 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L29/20 ,  H01L29/06

CPC classification number: H01L29/66681 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/7786

Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.

公开(公告)号：US20170194475A1

公开(公告)日：2017-07-06

申请号：US15464609

申请日：2017-03-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/205 ,  H01L29/20 ,  H01L29/417

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

公开(公告)号：US20170186905A1

公开(公告)日：2017-06-29

申请号：US15241425

申请日：2016-08-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky

IPC: H01L33/00 ,  C25D11/24 ,  C25D11/16 ,  H01L33/58 ,  H01L33/32 ,  H01L33/42 ,  H01L33/40 ,  H01L33/12 ,  C25D11/04 ,  C30B25/04

CPC classification number: H01L33/58 ,  C25D11/045 ,  C25D11/16 ,  C25D11/24 ,  C30B25/04 ,  H01L21/02178 ,  H01L21/02203 ,  H01L21/02258 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor structure. A filler material can penetrate at least some of the plurality of pores and directly contact the surface of the semiconductor structure. In an illustrative embodiment, multiple types of filler material at least partially fill the pores of the aluminum oxide layer.

公开(公告)号：US09653631B2

公开(公告)日：2017-05-16

申请号：US14475638

申请日：2014-09-03

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L31/0352 ,  H01L33/04 ,  H01L33/32

CPC classification number: H01L31/035272 ,  H01L33/04 ,  H01L33/32

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.