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公开(公告)号：KR1020040068566A
公开(公告)日：2004-07-31
申请号：KR1020047008349
申请日：2002-05-02
Applicant: 실버브룩 리서치 피티와이 리미티드
Inventor： 실버브룩키아
CPC classification number: B81C1/00666 , B81C2201/0167 , B81C2201/017 , C23C14/024 , C23C14/0641 , C30B23/02 , C30B29/38 , C30B29/605
Abstract: 본 발명은 두 개 이상의 층을 가지는 주성분인 제1결정재료의 증착에 의하여 형성되는 결정박막구조에 관한 것으로,
상기 제1결정재료의 층 사이에 제1결정재료의 격자상수와는 다른 격자상수를 가지는 제2결정재료의 층을 끼워넣음으로써, 제1결정재료의 주상결정의 성장을 방해함에 의하여, 상기 제1결정재료만으로 형성된 결정박막의 부등응력 프로파일에 비하여 상기 박막구조의 두께에 걸쳐 부등응력 프로파일이 감소되는 결정박막구조이다.-
公开(公告)号：KR1020140068167A
公开(公告)日：2014-06-05
申请号：KR1020147009204
申请日：2012-08-30
Applicant: 퀄컴 엠이엠에스 테크놀로지스, 인크.
Inventor： 푸,찬 , 타오,이 , 투펠리,찬드라에스. , 드조르제브,코스타딘디. , 종,판 , 헤,리후이 , 장,웬유
CPC classification number: G02B26/001 , B81B3/0072 , B81B2201/042 , B81B2203/019 , B81C2201/0167 , B81C2201/017
Abstract: 본 개시내용은 이동가능 층을 제어하기 위한 시스템들, 방법들 및 장치를 제공한다. 일 양상에서, 전기기계 시스템 디바이스는 갭을 정의하기 위하여 기판 및 기판위에 배치된 이동가능 층을 포함한다. 이동가능 층은 작동 위치와 릴랙스 위치 사이의 갭내에서 이동가능하며, 미러층, 캡층, 및 미러층과 캡층 사이에 배치된 유전체층을 포함한다. 이동가능 층은 이동가능 층이 릴랙스 위치에 있을때 기판으로부터 멀어지는 방향의 만곡부를 가지도록 구성된다. 일부 구현들에서, 이동가능 층은 희생층이 제거될때 이동가능 층을 위쪽으로 향해 이동가능 층의 만곡부를 유도할 수 있는, 기판쪽으로 향하는 양의 응력 기울기를 가지도록 형성될 수 있다.
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公开(公告)号：KR1020120135061A
公开(公告)日：2012-12-12
申请号：KR1020120057300
申请日：2012-05-30
Applicant: 픽스트로닉스 인코포레이티드
CPC classification number: G02B26/085 , B81B3/0072 , B81B2201/045 , B81C2201/0167
Abstract: PURPOSE: A display device and a manufacturing method thereof are provided to form a stable amorphous silicon film by providing a movable shutter with a low residual stress. CONSTITUTION: A display panel having provided a plurality of pixels which includes a driving circuit for driving a movable shutter(118) with amorphous silicon. The amorphous silicon of the movable shutter is composed of amorphous silicon films. One of the two adjacent amorphous silicon films has a different characteristic value from that of the other.
Abstract translation: 目的：提供一种显示装置及其制造方法，通过提供具有低残余应力的活动快门来形成稳定的非晶硅膜。 构成：具有多个像素的显示面板，其包括用非晶硅驱动可动活门（118）的驱动电路。 可移动快门的非晶硅由非晶硅膜构成。 两个相邻的非晶硅膜之一具有与另一个不同的特征值。
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公开(公告)号：KR1020090033882A
公开(公告)日：2009-04-06
申请号：KR1020097001923
申请日：2007-05-16
Applicant: 퀄컴 엠이엠에스 테크놀로지스, 인크.
CPC classification number: B81B3/0072 , B81B2201/042 , B81C1/00047 , B81C2201/0167
Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.
Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和装置。 一种制造光调制装置的方法包括提供衬底，在衬底的至少一部分上形成牺牲层，在牺牲层的至少一部分上形成反射层，以及在衬底上形成一个或多个弯曲控制器 所述弯曲控制器被配置成可操作地支撑所述反射层并且在去除所述牺牲层时形成可能与所述牺牲层的厚度可测量的深度的空腔，其中所述深度垂直于所述衬底测量。
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公开(公告)号：KR1020080072872A
公开(公告)日：2008-08-07
申请号：KR1020087012655
申请日：2006-10-19
Applicant: 퀄컴 엠이엠에스 테크놀로지스, 인크.
CPC classification number: G02B26/001 , B81B3/0072 , B81B2201/047 , B81C1/00793 , B81C2201/0167
Abstract: Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.
Abstract translation: 这里描述的是在MEMS器件中在金属层之间使用扩散阻挡层。 扩散阻挡层防止两种金属的混合，这可以改变期望的物理特性并使加工变得复杂。 在一个示例中，扩散阻挡层可以用作干涉式调制器中的可移动反射结构的一部分。
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Patent Agency Ranking
公开(公告)号：KR1020080054382A
公开(公告)日：2008-06-17
申请号：KR1020087005692
申请日：2006-08-29
Applicant: 엔엑스피 유에스에이, 인코포레이티드
CPC classification number: B81B3/0078 , B81B2203/0118 , B81C2201/0109 , B81C2201/0167
Abstract: A MEMS device (100, 300) and method of fabrication including a plurality of structural tie bars (108, 303, 304) for added structural integrity. The MEMS device includes an active layer (202) and a substrate (102) having an insulating material (204) formed therebetween, first and second pluralities of stationary electrodes (103, 105) and a plurality of moveable electrodes (107) in the active layer. A plurality of interconnects (106, 301, 302) are electrically coupled to a second surface of each of the first and second pluralities of stationary electrodes. A plurality of anchors (226) fixedly attach a first surface of each of the first and second pluralities of stationary electrodes to the substrate. A first structural tie bar couples a second surface of each of the first plurality of stationary electrodes and a second structural tie bar couples a second surface of each of the second plurality of stationary electrodes.
Abstract translation: MEMS器件（100,300）和制造方法包括用于增加结构完整性的多个结构连杆（108,303,304）。 MEMS器件包括有源层（202）和在其间形成有绝缘材料（204）的衬底（102），第一和第二多个固定电极（103,105）和多个活动电极（107） 层。 多个互连（106,301,302）电耦合到第一和第二多个固定电极中的每一个的第二表面。 多个锚定件（226）将第一和第二多个固定电极中的每一个的第一表面固定地附接到基板。 第一结构连接杆联接第一多个固定电极中的每一个的第二表面，并且第二结构连接杆联接第二多个固定电极中的每一个的第二表面。
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公开(公告)号：EP1826174B1
公开(公告)日：2018-09-12
申请号：EP07100826.2
申请日：2007-01-19
Applicant: OMRON CORPORATION
Inventor： Kasai, Takashi , Wakabayashi, Shuichi
CPC classification number: B81B3/0072 , B81C2201/0167 , C23C16/24 , C23C16/56
Abstract: A method for forming a thin film structure, which has small tensile stress due to controlled mechanical stress, and is made to be conductive, is provided. A lower film including polysilicon thin film is formed on a substrate such as Si substrate, then an impurity such as P is doped into the lower film and thermally diffused, thereby the lower film is made conductive. Then, an upper film is deposited on the lower film, the upper film including a polysilicon thin film that is simply deposited and not made to be conductive. The upper film has a tensile stress in an approximately the same level as compressive stress of the lower film, and a thin film structure as a whole, the structure including the lower film and the upper film, is adjusted to have small tensile stress.
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公开(公告)号：EP2678265B1
公开(公告)日：2018-08-01
申请号：EP12710454.5
申请日：2012-02-24
Applicant: HARTING AG & Co. KG
Inventor： GATZEN, Hans-Heinrich , GRIESBACH, Tim
IPC: B81B3/00
CPC classification number: H05K1/0271 , B81B3/0072 , B81B2201/11 , B81C2201/0167 , H05K3/303 , Y10T29/49133
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公开(公告)号：EP2449670B1
公开(公告)日：2015-01-21
申请号：EP10757630.8
申请日：2010-06-15
Applicant: Freescale Semiconductor, Inc. , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Inventor： PERRUCHOT, François , LIU, Lianjun , PACHECO, Sergio , DEFAY, Emmanuel , REY, Patrice
IPC: H02N1/00
CPC classification number: B81C1/00666 , B81B2203/0118 , B81C2201/0167 , B81C2201/0169
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160.发明公开
公开(公告)号：EP2495212A3
公开(公告)日：2012-10-31
申请号：EP12170329.2
申请日：2006-07-20
Applicant: QUALCOMM MEMS Technologies, Inc.
Inventor： Chui, Clarence , Chung, Wonsuk , Ganti, Surya Prakash , Kothari, Manish , Miles, Mark W. , Sampsell, Jeffrey Brian , Sasagawa, Teruo
CPC classification number: G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
Abstract: Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.
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