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    AN ELECTRO-OPTIC DEVICE
    151.
    发明公开
    AN ELECTRO-OPTIC DEVICE 失效
    电光学装置

    公开(公告)号：EP0720754A1

    公开(公告)日：1996-07-10

    申请号：EP93920980.0

    申请日：1993-09-21

    Applicant: BOOKHAM TECHNOLOGY LIMITED

    Inventor： CRAMPTON, Stephen, James ,  HARPIN, Arnold, Peter, Roscoe ,  RICKMAN, Andrew, George

    IPC: G02F1

    CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F1/3138 ,  G02F2001/0152 ,  G02F2201/063 ,  G02F2202/105

    Abstract: The device comprises a layer of silicon (3) separated from a substrate (1) by a layer of insulating material (2). A rib (4) having an upper surface (4A) and two side surfaces (4B, 4C) is formed in the layer of silicon (3) to provide a waveguide for the transmission of optical signals. A lateral doped junction (7, 9, 8) is formed between the side surfaces (4B, 4C) of the rib (4) such that an electrical signal can be applied across the junction (7, 9, 8) to control the density of charge carriers across a substantial part of the cross-sectional area of the rib (4) thereby actively altering the effective refractive index of the waveguide.

    Optical guided-wave device and manufacturing method
    152.
    发明公开
    Optical guided-wave device and manufacturing method 失效
    Optische Wellenleitervorrichtung und Herstellungsverfahren。

    公开(公告)号：EP0567051A1

    公开(公告)日：1993-10-27

    申请号：EP93106332.5

    申请日：1993-04-20

    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    Inventor： Eda, Kazuo ,  Sugihara, Miho

    IPC: G02F1/035 ,  G02B6/12

    CPC classification number: G02B6/122 ,  G02F1/035 ,  G02F2201/063 ,  G02F2202/20

    Abstract: An optical guided-wave device with an electro optic effect is comprised of first (1) and second substrates (2) having first and second refractive indices wherein the second refractive index is larger than the first one. These substrates are made of a single crystal dielectric material such as lithium tantalate or lithium niobate and, if they are made of the same material, they have different crystal orientations resulting in different refractive indices.
    These substrates are physically bonded directly or via a thin film such as glass, silicon, silicon oxide or silicon nitride and then, the second substrate (2) is thinned and worked to form a wave guide (3) therein.

    Abstract translation: 具有电光效应的光导波器件由具有第一和第二折射率的第一（1）和第二基片（2）组成，其中第二折射率大于第一折射率。 这些衬底由诸如钽酸锂或铌酸锂的单晶介电材料制成，并且如果它们由相同的材料制成，它们具有不同的晶体取向，导致不同的折射率。 这些基板直接或通过诸如玻璃，硅，氧化硅或氮化硅的薄膜物理结合，然后将第二基板（2）变薄并加工成在其中形成波导（3）。

    "> Modulator or switch with vertically-coupled anti-resonant reflecting optical waveguides (
    153.
    发明公开
    Modulator or switch with vertically-coupled anti-resonant reflecting optical waveguides ("arrow") on silicon 失效
    调制器或开关与垂直耦合，反谐振反射上硅光波导（“箭头”）。

    公开(公告)号：EP0543369A1

    公开(公告)日：1993-05-26

    申请号：EP92119714.1

    申请日：1992-11-19

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Magel, Gregory A.

    IPC: G02F1/01 ,  G02B6/12 ,  G02F1/025

    CPC classification number: G02F1/011 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/063 ,  G02F2201/302 ,  G02F2202/101 ,  G02F2202/105

    Abstract: An optical modulator is disclosed. The modulator (10) is based upon an ARROW waveguide, consisting of a substrate (12), a lower cladding (16), an interference layer (18), and a core layer (20). An electronic element (14) is formed in the structure to control the free-carrier concentration in the interference layer (18). The light is coupled by gratings (22,24) into the interference layer (18), where the free-carrier concentration is controlled by the element (14), which in turn controls the modulation of the light in the interference layer (18) before it is coupled back to the core (20) layer.

    Abstract translation: 的光调制器是游离缺失光盘。 调制器（10）是基于一个ARROW波导，基板（12），下包层（16）与干扰层（18），和芯层（20）组成的聚合物。 在以控制干涉层到电子元件的自由载流子浓度的结构（14）形成（18）。 的光由光栅（22,24）到所述干扰层（18），其中自由载流子浓度通过元件（14），这反过来又控制光在干涉层的调制来控制耦合（18） 前它被耦合回芯（20）层。

    Light modulation device
    154.
    发明公开
    Light modulation device 失效
    一种用于光调制装置。

    公开(公告)号：EP0121401A2

    公开(公告)日：1984-10-10

    申请号：EP84302084.3

    申请日：1984-03-28

    Applicant: SUMITOMO ELECTRIC INDUSTRIES LIMITED

    Inventor： Tada, Kunio ,  Nishiwaki, Yoshikazu c/o OSAKA WORKS ,  Matsuoka, Shunji c/o OSAKA WORKS

    IPC: G02F1/015 ,  G02F1/31 ,  G02B6/10

    CPC classification number: G02F1/025 ,  G02F1/3133 ,  G02F2001/0151 ,  G02F2201/063 ,  G02F2202/101

    Abstract: A light modulation device comprises a substrate (1), a substrate layer (2), an optical waveguide layer (3) and buffer layers (4), in that order, formed of either all n-type or all p-type compound semiconductor crystal. In orderto capture the light in the optical waveguide layer, the composition ratio of the compound semiconductor is so determined that the refractive index is at least approximately 0.1% higher in the optical waveguide layers than in the substrate layer and in the buffer layers. Furthermore, the carrier density is low in the optical waveguide layer and in the buffer layers, so that the applied voltage is effectively applied mainly to the optical waveguide layer. Due to the construction of the light modulation device, strict control of the etching process is not required, the device has a low absorption loss of light, and it can be made as a monolithic optical integrated circuit.

    シリコンベース電気光学変調装置
    156.
    发明专利
    シリコンベース電気光学変調装置 有权
    基于硅的电 - 光调制器

    公开(公告)号：JPWO2014155450A1

    公开(公告)日：2017-02-16

    申请号：JP2015507689

    申请日：2013-11-28

    Applicant: 日本電気株式会社

    Inventor： 藤方　潤一 ,  潤一 藤方 ,  重樹 高橋 ,  重樹 高橋

    IPC: G02F1/025 ,  G02B6/12 ,  G02B6/122 ,  G02B6/125

    CPC classification number: G02F1/025 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2001/0113 ,  G02F2001/0152 ,  G02F2001/212 ,  G02F2201/063

    Abstract: 小型かつ高速動作可能なシリコンベース電気光学変調装置を提供する。第1の導電タイプを呈するようにドープ処理された第1シリコン半導体層(120)と第2の導電タイプを呈するようにドープ処理された第2シリコン半導体層(160)との少なくとも一部が重なるように積層し、かつ、第1シリコン半導体層(120)と第2シリコン半導体層(160)とが積層された界面に比較的薄い誘電体(150)を形成する。第1シリコン半導体層(120)は、リブ部(131)とスラブ部(132、132)とを有するリブ導波路形状(130)である。第1シリコン半導体層(120)のスラブ部(132、132)に隣接する位置において、高濃度ドープされた第1高濃度ドープ領域(140、140)を有する。第1高濃度ドープ領域(140、140)は、リブ導波路(130)のリブ部(131)と同等の高さを有する。

    Abstract translation: 提供一种紧凑的和高速操作可能硅基电光调制器。 被掺杂的第一硅半导体层（120）和掺杂表现出的第二导电类型（160）和至少部分地重叠所述第二硅半导体层表现出的第一导电类型 层叠，并形成在所述第一硅半导体层（120）和所述第二硅半导体层（160）的接口的相对薄的电介质（150）和被堆叠。 第一硅半导体层（120）是板部肋部（131）（132）肋形波导的形状（130）和一个。 在具有被重掺杂的第一重掺杂区（140，140）相邻的第一硅半导体层（120）（132，132）的板坯部分的位置，。 第一重掺杂区（140，140）具有与所述脊形波导（130）的等效高度的肋部分（131）。

    The semiconductor optical modulator and a semiconductor Mach-Zehnder type optical modulator
    158.
    发明专利
    The semiconductor optical modulator and a semiconductor Mach-Zehnder type optical modulator 有权

    公开(公告)号：JP5257638B2

    公开(公告)日：2013-08-07

    申请号：JP2011515969

    申请日：2010-05-12

    Applicant: 日本電気株式会社

    Inventor： 健二 佐藤 ,  友章 加藤

    IPC: G02F1/025

    CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2201/063 ,  G02F2202/06

    Abstract: Provided are a semiconductor optical modulator and a semiconductor Mach-Zehnder optical modulator of high efficiency and high reliability. The semiconductor optical modulator 10 of the present invention includes a substrate 11; a first n-type cladding layer 12; a semiconductor optical modulation layer 13; a p-type cladding layer 14; a second n-type cladding layer 15; a passivation film 19; and an electric field-relaxing layer 16, wherein the first n-type cladding layer 12, the semiconductor optical modulation layer 13, the p-type cladding layer 14, and the second n-type cladding layer 15 are laminated on the substrate 11 in this order to form a waveguide structure, the passivation film 19 is arranged at the side surfaces of the waveguide structure, the electric field-relaxing layer 16 is interposed between the p-type cladding layer 14 and the second n-type cladding layer 15, and an impurity concentration of the electric field-relaxing layer 16 is lower than that of the p-type cladding layer 14 and that of the second n-type cladding layer 15.

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