公开(公告)号：US06417606B1

公开(公告)日：2002-07-09

申请号：US09414840

申请日：1999-10-08

Applicant: Masayuki Nakamoto ,  Katsuyoshi Fukuda

Inventor： Masayuki Nakamoto ,  Katsuyoshi Fukuda

IPC: H01J130

CPC classification number: H01J1/304 ,  H01J2201/30403 ,  H01J2201/30426 ,  Y10S977/939

Abstract: In a field emission cold-cathode device, a cathode line or electrode is arranged on a glass substrate. An emitter is arranged on the cathode electrode and is formed of a conductive layer, a low-work-function material layer, and a tip layer stacked one on top of the other in this order. The emitter has a pyramid shape in which the tip layer has a sharp tip. The low-work-function material layer is made of a material having a work function of 4.0 eV or less. The tip layer is made of a material having a negative electron affinity and formed of granular bodies or linear bodies each having a diameter of 100 nm or less.

Abstract translation: 在场发射冷阴极器件中，阴极线或电极布置在玻璃衬底上。 发射极配置在阴极上，由依次层叠的导电层，低功函数材料层和顶层构成。 发射器具有金字塔形状，其中尖端层具有尖锐的尖端。 低功函数材料层由功函数为4.0eV以下的材料构成。 尖端层由具有负电子亲和性的材料制成，并且由直径为100nm以下的粒状体或线状体构成。

公开(公告)号：US20020033663A1

公开(公告)日：2002-03-21

申请号：US09965197

申请日：2001-09-26

Inventor： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

IPC: H01J001/62

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

Abstract translation: 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

公开(公告)号：US20010000163A1

公开(公告)日：2001-04-05

申请号：US09727023

申请日：2000-11-29

Inventor： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

IPC: H01J009/04 ,  H01J009/12

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

Abstract translation: 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

公开(公告)号：US6103298A

公开(公告)日：2000-08-15

申请号：US955097

申请日：1997-10-22

Applicant: Jonathan Sidney Edelson ,  Isaiah Watas Cox

Inventor： Jonathan Sidney Edelson ,  Isaiah Watas Cox

IPC: C23C14/12 ,  F25B21/00 ,  H01J1/02 ,  H01J1/13 ,  H01J1/14 ,  H01J1/30 ,  H01J21/04 ,  H01J21/10 ,  H01J45/00 ,  C25B11/04

CPC classification number: F25B21/00 ,  C23C14/12 ,  H01J1/02 ,  H01J1/13 ,  H01J1/14 ,  H01J1/30 ,  H01J21/04 ,  H01J21/105 ,  H01J45/00 ,  F25B2321/003 ,  F25B2400/15 ,  H01J2201/30426 ,  Y02B30/66

Abstract: Methods for making low work function electrodes either made from or coated with an electride material in which the electride material has lattice defect sites are described. Lattice defect sites are regions of the crystal structure where irregularities and deformations occur. Also provided are methods for making electrodes which consist of a substrate coated with a layer of a compound comprised of a cation complexed by an electride former, in which said complex has lattice defect sites. In addition, methods for making electrodes which consist of a bulk metal coated with a layer of an electride former having lattice defect sites are described. The electride former stabilizes the loss of electrons by surface sites on the metal, lowering the work-function of the coated surface.

Abstract translation: 描述了由电镀材料具有晶格缺陷部位的电极材料制成或涂覆低功函电极的方法。 晶格缺陷位点是发生不规则和变形的晶体结构区域。 还提供了制造电极的方法，其由涂覆有由电化学成形剂络合的阳离子组成的化合物层的基底组成，其中所述络合物具有晶格缺陷位点。 此外，描述了制造电极的方法，其由涂覆有具有晶格缺陷位点的电化学成形剂层的体金属组成。 电子前体通过金属上的表面位点稳定电子的损失，降低涂覆表面的功能。

公开(公告)号：US6091190A

公开(公告)日：2000-07-18

申请号：US901734

申请日：1997-07-28

Applicant: Babu R. Chalamala ,  Sung P. Pack ,  Charles A. Rowell

Inventor： Babu R. Chalamala ,  Sung P. Pack ,  Charles A. Rowell

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J29/04 ,  H01J2201/30426

Abstract: An electron emitter (121, 221, 321, 421) includes an electron emitter structure (118) having a passivation layer (120, 220, 320, 420) formed thereon. The passivation layer (120, 220, 320, 420) is made from an oxide selected from a group consisting of the oxides of Ba, Ca, Sr, In, Sc, Ti, Ir, Co, Sr, Y, Zr, Ru, Pd, Sn, Lu, Hf, Re, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Th, and combinations thereof. In the preferred embodiment, the electron emitter structure (118) is made from molybdenum, and the passivation layer (120, 220, 320, 420) is made from an emission-enhancing oxide having a work function that is less than the work function of the molybdenum.

Abstract translation: 电子发射器（121,221,321,421）包括具有形成在其上的钝化层（120,220,320,420）的电子发射体结构（118）。 钝化层（120,220,320,420）由选自由Ba，Ca，Sr，In，Sc，Ti，Ir，Co，Sr，Y，Zr，Ru， Pd，Sn，Lu，Hf，Re，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Th及其组合。 在优选实施例中，电子发射器结构（118）由钼制成，并且钝化层（120,220,320,420）由具有小于功函数的功函数的发光增强氧化物制成 钼。

公开(公告)号：US5965977A

公开(公告)日：1999-10-12

申请号：US828836

申请日：1997-03-24

Applicant: Hideo Makishima

Inventor： Hideo Makishima

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J63/02 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J1/304 ,  H01J63/02 ,  H01J2201/30403 ,  H01J2201/30426

Abstract: There is provided a cold cathode including a substrate, a plurality of electron emitting electrodes formed on the substrate, a first insulating layer formed on the substrate and formed with a plurality of first cavities in which the electron emitting electrodes are disposed, a gate electrode formed on the first insulating layer and formed with a plurality of first openings which are in communication with the first cavities, a second insulating layer formed on the gate electrode and formed with a plurality of second cavities which are in communication with the first openings, and a focusing electrode formed on the second insulating layer and formed with a plurality of second openings which are in communication with the second cavities. At least one of central axes of the second openings and central axes of the first openings is eccentric with central axes of the electron emitting electrodes. Eccentricity between at least one of the central axes of the second openings and the central axes of the first openings, and the central axes of the electron emitting electrodes is oriented outwardly, and a degree of the eccentricity is set greater at a location more remote from a centrally located electron emitting electrode.

Abstract translation: 提供了一种冷阴极，其包括基板，形成在基板上的多个电子发射电极，形成在基板上并形成有多个第一空腔的第一绝缘层，其中设置有电子发射电极，形成栅电极 在所述第一绝缘层上形成有与所述第一空腔连通的多个第一开口，形成在所述栅电极上并形成有与所述第一开口连通的多个第二空腔的第二绝缘层，以及 聚焦电极形成在第二绝缘层上并且形成有与第二空腔连通的多个第二开口。 第二开口的中心轴线和第一开口的中心轴线的至少一个与电子发射电极的中心轴偏心。 第二开口的至少一个中心轴线与第一开口的中心轴线和电子发射电极的中心轴线之间的偏心度向外取向，偏心度在远离 中心位置的电子发射电极。

公开(公告)号：US5888113A

公开(公告)日：1999-03-30

申请号：US829492

申请日：1997-03-27

Applicant: David F. Anderson ,  Simon W. Kwan

Inventor： David F. Anderson ,  Simon W. Kwan

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30426 ,  H01J2329/00

Abstract: A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.

Abstract translation: 用于制造精梳金刚石薄膜的方法包括（a）在约10-4托和约10-7托之间的真空中在金刚石膜上沉积一定数量的碘化铯，（b）将真空度增加至至少约10 -8 Torr，和（c）在金刚石膜上施加电子束，所述电子束具有足以解离所述碘化铯并将铯结合到金刚石膜的间隙中的能量。 根据该方法制备的切割的金刚石薄膜的工作电压相对于常规的非切割金刚石膜场发射体的工作电压降低了至少约2.5倍。

公开(公告)号：US5836796A

公开(公告)日：1998-11-17

申请号：US548039

申请日：1995-10-25

Applicant: Joel Danroc

Inventor： Joel Danroc

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Process for the production of a field effect electron source and source obtained by said process, application to display means by cathodoluminescence. On an insulating substrate (2), said source comprises at least one cathode conductor (4), an insulating layer (6) covering the latter, at least one grid (8) formed on the insulating layer, holes (10) being formed through said grid and the insulating layer, and microtips (12) made from an electron emitting, metallic material, formed in said holes and covered with a deposit (13) of carbon diamond or diamond like carbon particles formed by electrophoresis or by joint electrochemical deposition of metal and carbon diamond or diamond like carbon.

Abstract translation: 用于生产通过所述方法获得的场效应电子源和源的方法，通过阴极发光应用于显示装置。 在绝缘基板（2）上，所述源极包括至少一个阴极导体（4），覆盖其上的绝缘层（6），形成在绝缘层上的至少一个格栅（8），穿过 所述栅格和绝缘层，以及由电子发射金属材料制成的微尖端（12），形成在所述孔中并覆盖有通过电泳形成的碳金刚石或类金刚石碳颗粒沉积物（13），或通过电化学沉积 金属和碳金刚石或类似钻石的碳。

公开(公告)号：US5831378A

公开(公告)日：1998-11-03

申请号：US918766

申请日：1997-08-25

Applicant: J. Brett Rolfson ,  Kevin Tjaden

Inventor： J. Brett Rolfson ,  Kevin Tjaden

IPC: H01J9/02 ,  H01L21/3105 ,  H01J1/16 ,  H01J1/02 ,  H01J1/62 ,  H01J19/10

CPC classification number: H01L21/31053 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226

Abstract: A field emitter display having reduced surface leakage comprising at least one emitter tip surrounded by a dielectric region. The dielectric region is formed of a composite of insulative layers, at least one of which has fins extending toward the emitter tip. A conductive gate, for extracting electrons from the emitter tip, is disposed superjacent the dielectric region. The fins increase the length of the path that leaked electrical charge travels before impacting the gate.

Abstract translation: 具有减小的表面泄漏的场发射器显示器包括由电介质区域包围的至少一个发射极尖端。 电介质区域由绝缘层的复合体形成，其中至少一个具有朝向发射极尖端延伸的翅片。 用于从发射极尖端提取电子的导电栅极设置在电介质区域的上方。 在撞击门之前，翅片增加了泄漏电荷行进路径的长度。

公开(公告)号：US5825122A

公开(公告)日：1998-10-20

申请号：US619704

申请日：1996-03-26

Applicant: Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

Inventor： Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

IPC: H01J31/12 ,  H01J1/304 ,  H01J19/24 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as ballast resistors connected in series to the emitters. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of height (h) to the diameter (D) at the emitter base is not less than 1. The angle .alpha. at the emitter tip does not exceed 30.degree.. The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

Abstract translation: PCT No.PCT / RU95 / 00154 Sec。 371日期1997年3月26日 102（e）1997年3月26日PCT PCT 1995年7月18日PCT公布。 公开号WO96 / 03762 日期1996年2月8日A矩阵场致发射阴极（5）包括单晶硅衬底（7），其上布置有外延生长的尖晶硅发射体（1），其也用作与放射器串联连接的镇流电阻器。 在所提出的阴极的有利实施例中，对于发射极尖端处的曲率半径（r）不超过10nm，发射器的高度（h）与半径（r）之比不小于1000，而 发射极底部的高度（h）与直径（D）的比值不小于1.发射极尖端的角度α不超过30°。 选择发射极材料的电阻率，以确保每个发射极的电阻与阴极和相对电极之间的电阻相当。 所提出的阴极用于显示信息的电子设备中，该电子设备还具有磷光材料条带（11）形式的阳极（3）和在阴极（5）上投影的导电层（9） 垂直于阴极上的导电路径（6）; 阳极本身用作控制电极。