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公开(公告)号：US20190125907A1
公开(公告)日：2019-05-02
申请号：US16176336
申请日：2018-10-31
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky
Abstract: Disinfection of a surface, such as a mouthpiece of a water bottle, using ultraviolet radiation is disclosed. A cover assembly can include a cover configured to selectively enclose the surface to be disinfected, such as the mouthpiece. The cover assembly can be configured such that ultraviolet radiation can be emitted into an interior volume at least partially formed by the cover and including the surface. The cover assembly can further include a power source which provides power to one or more ultraviolet light sources that emit the ultraviolet radiation. The cover assembly can be a mouthpiece cover assembly physically separate from a container and top cover or integrated in the top cover. A container and a top cover including one or more features for improved cleanliness are also disclosed.
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公开(公告)号：US20190117811A1
公开(公告)日：2019-04-25
申请号：US16170617
申请日：2018-10-25
Applicant: Sensor Electronic Technology, Inc.
Inventor： Arthur Peter Barber, III
Abstract: An illuminator comprising more than one set of ultraviolet radiation sources. A first set of ultraviolet radiation sources operate in a wavelength range of approximately 270 nanometers to approximately 290 nanometers. A second set of ultraviolet radiation sources operate in a wavelength range of approximately 380 nanometers to approximately 420 nanometers. The illuminator can also include a set of sensors for acquiring data regarding at least one object to be irradiated by the first and the second set of ultraviolet radiation sources. A control system configured to control and adjust a set of radiation settings for the first and the second set of ultraviolet radiation sources based on the data acquired by the set of sensors.
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公开(公告)号：US20190100718A1
公开(公告)日：2019-04-04
申请号：US16142965
申请日：2018-09-26
Applicant: Sensor Electronic Technology, Inc.
Inventor： Faris Mills Morrison Estes , Alexander Dobrinsky
Abstract: Ultraviolet irradiation of fluids for the purposes of disinfection, sterilization and modification of a target organic compound found within the fluids. The target compound in the fluids can have an absorption spectra with an ultraviolet wavelength ranging from 230 nm to 360 nm. The absorption spectra includes a first and second set of wavelengths corresponding to absorption peaks and absorption valleys in the absorption spectra, respectively. A-set of ultraviolet radiation sources irradiate the fluids. The set of ultraviolet radiation sources operate at a set of peak wavelengths ranging from 230 nm to 360 nm with a peak full width at half maximum that is less than 20 nm. The set of peak wavelengths are proximate to at least one wavelength in the second set of wavelengths corresponding to the absorption valleys in the absorption spectra with a variation of a full width half maximum of the absorption valley.
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164.发明申请公开(公告)号：US20190098969A1
公开(公告)日：2019-04-04
申请号：US16144398
申请日：2018-09-27
Applicant: Sensor Electronic Technology, Inc.
Inventor： Carlton Gibson , Alexander Dobrinsky
Abstract: A wearable fluorescent article of adornment with ultraviolet radiation source of excitation is described. At least one ultraviolet light emitting source can irradiate a fluorescent material with ultraviolet radiation. The fluorescent material can generate fluorescent light in response to excitation of the fluorescent material with ultraviolet radiation emitted from the at least one ultraviolet light emitting source. The article of adornment can transmit the fluorescent light generated from the fluorescent material while absorbing the ultraviolet radiation. A control unit can control irradiation of the fluorescent material with the at least one ultraviolet light emitting source, while a power supply component can power the at least one ultraviolet light emitting source and/or the control unit.
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公开(公告)号：US10224408B2
公开(公告)日：2019-03-05
申请号：US15601128
申请日：2017-05-22
Applicant: Sensor Electronic Technology, Inc.
Inventor： Mikhail Gaevski , Grigory Simin , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC: H01L33/38 , H01L29/45 , H01L29/20 , H01L21/285 , H01L29/417 , H01L29/778
Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
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Patent Agency Ranking
公开(公告)号：US20190056538A1
公开(公告)日：2019-02-21
申请号：US16166882
申请日：2018-10-22
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Michael Shur
Abstract: A diffusive layer including a laminate of a plurality of transparent films is provided. At least one of the plurality of transparent films includes a plurality of diffusive elements with a concentration that is less than a percolation threshold. The plurality of diffusive elements are optical elements that diffuse light that is impinging on such element. The plurality of diffusive elements can be diffusively reflective, diffusively transmitting or combination of both. The plurality of diffusive elements can include fibers, grains, domains, and/or the like. The at least one film can also include a powder material for improving the diffusive emission of radiation and a plurality of particles that are fluorescent when exposed to radiation.
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167.发明授权公开(公告)号：US10211048B2
公开(公告)日：2019-02-19
申请号：US13756806
申请日：2013-02-01
Applicant: Sensor Electronic Technology, Inc.
Inventor： Wenhong Sun , Rakesh Jain , Jinwei Yang , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Michael Shur
Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer. One or more of a set of growth conditions, a thickness of one or both of the layers, and/or a lattice mismatch between the layers can be configured to create a target level of compressive and/or shear stress within a minimum percentage of the interface between the layers.
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公开(公告)号：US20190035968A1
公开(公告)日：2019-01-31
申请号：US16145947
申请日：2018-09-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Michael Shur
IPC: H01L33/00 , H01L31/0352 , H01L31/0224 , H01L31/0304 , H01L33/40 , H01L33/32 , H01L33/08 , H01L33/06 , H01L31/109
CPC classification number: H01L33/0025 , H01L31/022408 , H01L31/03048 , H01L31/035227 , H01L31/035236 , H01L31/035272 , H01L31/109 , H01L33/025 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/32 , H01L33/405
Abstract: A semiconductor heterostructure including a polarization doped region is described. The region can correspond to an active region of a device, such as an optoelectronic device. The region includes an n-type semiconductor side and a p-type semiconductor side and can include one or more quantum wells located there between. The n-type and/or p-type semiconductor side can be formed of a group III nitride including aluminum and indium, where a first molar fraction of aluminum nitride and a first molar fraction of indium nitride increase (for the n-type side) or decrease (for the p-type side) along a growth direction to create the n- and/or p-polarizations.
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公开(公告)号：US10183085B2
公开(公告)日：2019-01-22
申请号：US15436945
申请日：2017-02-20
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Michael Shur , Remigijus Gaska , Timothy James Bettles
IPC: G01J1/42 , A61L2/10 , A61L2/24 , A61L9/20 , G01N21/64 , A61L9/00 , A41D13/002 , G09B5/06 , G09B19/24
Abstract: A system capable of detecting and/or sterilizing surface(s) of an object using ultraviolet radiation is provided. The system can include a disinfection chamber and/or handheld ultraviolet unit, which includes ultraviolet sources for inducing fluorescence in a contaminant and/or sterilizing a surface of an object. The object can comprise a protective suit, which is worn by a user and also can include ultraviolet sources for disinfecting air prior to the air entering the protective suit. The system can be implemented as a multi-tiered system for protecting the user and others from exposure to the contaminant and sterilizing the protective suit after exposure to an environment including the contaminant.
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公开(公告)号：US20190006553A1
公开(公告)日：2019-01-03
申请号：US16022856
申请日：2018-06-29
Applicant: Sensor Electronic Technology, Inc.
Inventor： Rakesh Jain , Maxim S. Shatalov
Abstract: Semiconductor structures formed with annealing for use in the fabrication of optoelectronic devices. The semiconductor structures can include a substrate, a nucleation layer and a buffer layer. The nucleation layer and the buffer layer can be epitaxially grown and then annealed. The temperature of the annealing of the nucleation layer and the buffer layer is greater than the temperature of the epitaxial growth of the layers. The annealing reduces the dislocation density in any subsequent layers that are added to the semiconductor structures. A desorption minimizing layer epitaxially grown on the buffer layer can be used to minimize desorption during the annealing of the layer which also aids in curtailing dislocation density and cracks in the semiconductor structures.
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