公开(公告)号：US09647168B2

公开(公告)日：2017-05-09

申请号：US14944538

申请日：2015-11-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/04 ,  H01L33/32

CPC classification number: H01L33/002 ,  H01L31/022408 ,  H01L31/035236 ,  H01L31/105 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/04 ,  H01L33/145 ,  H01L33/32 ,  H01L2933/0008

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

公开(公告)号：US20170121701A1

公开(公告)日：2017-05-04

申请号：US15338913

申请日：2016-10-31

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur

IPC: C12N13/00 ,  A61L2/00 ,  A61K39/00 ,  C12Q1/22 ,  C12N7/00 ,  C12N1/36

CPC classification number: C12N13/00 ,  A61K39/00 ,  A61K2039/521 ,  A61K2039/5252 ,  A61L2/0047 ,  A61L2202/21 ,  C12N1/36 ,  C12N7/00 ,  C12N7/04

Abstract: An approach for preparing a vaccine using ultraviolet radiation is described. Aspects of this approach involve multiple iterations of inactivation of the vaccine using an ultraviolet radiation source at a set of different wavelengths and dosages. A recognition test of the vaccine using the set of different wavelengths and dosages is performed after the multiple iterations of inactivation. A controller compares results from the inactivation test and the recognition test to determine an area of acceptable radiation dosages and wavelengths generated from the ultraviolet radiation source that irradiate the live organisms without affecting efficacy and safety of the vaccine. The area of acceptable ultraviolet radiation dosages and wavelengths is representative of a difference between an ultraviolet radiation dosage that is required for inactivation and an ultraviolet radiation dosage that leads to a loss of recognition.

公开(公告)号：US09634189B2

公开(公告)日：2017-04-25

申请号：US15138415

申请日：2016-04-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L21/02 ,  G06F17/50 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

CPC classification number: H01L33/22 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/16225

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.

公开(公告)号：US20170104138A1

公开(公告)日：2017-04-13

申请号：US15388468

申请日：2016-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Saulius Smetona ,  Alexander Dobrinsky ,  Michael Shur ,  Mikhail Gaevski

IPC: H01L33/56 ,  H01L33/58 ,  H01L33/50 ,  H01L33/48

CPC classification number: H01L33/56 ,  B29C51/12 ,  B29L2031/3481 ,  B29L2031/747 ,  G02B3/005 ,  G02B6/4249 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L33/0095 ,  H01L33/58 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/81801 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.

公开(公告)号：US20170104135A1

公开(公告)日：2017-04-13

申请号：US15291169

申请日：2016-10-12

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/64 ,  H01L27/12 ,  H01L27/15

CPC classification number: H01L33/486 ,  H01L27/1214 ,  H01L27/156 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/16225 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: A mounting structure for mounting a set of optoelectronic devices is provided. A mounting structure for a set of optoelectronic devices can include: a body formed of an insulating material; and a heatsink element embedded within the body. A heatsink can be located adjacent to the mounting structure. The set of optoelectronic devices can be mounted on a side of the mounting structure opposite of the heatsink.

公开(公告)号：US20170104132A1

公开(公告)日：2017-04-13

申请号：US15391922

申请日：2016-12-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/151 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20

Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.

公开(公告)号：US20170104131A1

公开(公告)日：2017-04-13

申请号：US15390575

申请日：2016-12-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32 ,  H01L33/24

CPC classification number: H01L33/22 ,  G06F17/5009 ,  G06F17/5045 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62 ,  H01L2933/0083 ,  Y10T29/49

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

公开(公告)号：US20170104129A1

公开(公告)日：2017-04-13

申请号：US15389479

申请日：2016-12-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/24 ,  H01L33/00 ,  H01L33/32 ,  H01L33/22

CPC classification number: H01L33/06 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/2003 ,  H01L29/518 ,  H01L29/7786 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

公开(公告)号：US20170100496A1

公开(公告)日：2017-04-13

申请号：US15388506

申请日：2016-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: A61L2/10 ,  A23L3/28 ,  A61L2/24 ,  F25D11/00 ,  F25D17/04

CPC classification number: A61L2/10 ,  A23L3/003 ,  A23L3/28 ,  A23V2002/00 ,  A61L2/18 ,  A61L2/24 ,  A61L2/28 ,  A61L2202/11 ,  A61L2202/14 ,  A61L2202/18 ,  A61L2202/23 ,  F25D11/00 ,  F25D17/042 ,  F25D2317/0417 ,  F25D2400/361 ,  F25D2700/06

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.

公开(公告)号：US09595634B2

公开(公告)日：2017-03-14

申请号：US15200313

申请日：2016-07-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/22 ,  H01S5/343 ,  H01L33/10 ,  H01S5/125 ,  H01S5/30 ,  B82Y10/00 ,  H01L21/02 ,  H01L29/15 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/325 ,  H01L33/405 ,  H01S5/125 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/34346

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

Abstract translation: 提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。 该层可以包括短期超晶格，其包括与井交替的障碍物。 在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。