Abstract:
Micro electromechanical devices and methods for designing such devices are disclosed. An example micro electromechanical device includes at least two anchors. The example device also includes a floating element. The floating element extends between the at least two anchors and includes a predetermined reference portion. In at least one predetermined state during operation of the device, the reference portion is located within a predetermined reference plane. The floating element includes at least two flexible sections, where the at least two flexible sections each extends between the reference portion and a respective one of the anchors. In the example device, at least two of the at least two flexible sections include respective stress relieving elements. The stress relieving elements enable deflection of the floating element as a result of a stress gradient. The stress relieving elements are provided at predetermined locations between the respective anchors and the reference portion, where the predetermined locations are selected such that the reference portion is substantially located within the predetermined reference plane in the at least one predetermined state of the device.
Abstract:
A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (“MEMS”) and low-temperature co-fired ceramic (“LTCC”) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules and a MEMS device fabricated on one of the modules. Once fabrication of the MEMS device is completed, the two ceramic modules are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module has also cavities at the backside for mounting integrated circuits. The internal layers are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.
Abstract:
A microelectromechanical device is provided which includes a contact structure interposed between a pair of electrodes arranged beneath a beam. In some embodiments, the device may include additional contact structures interposed between the pair of electrodes. For example, the device may include at least three contact structures between the pair of electrodes. In some embodiments, the beam may be suspended above the pair of electrodes by a support structure affixed to a first end of the beam. Such a device may further include an additional support structure affixed to a second end of the beam. In some cases, the device may be adapted to pass a signal from the first end to the second end of the beam. In addition or alternatively, the device may be adapted to pass the signal between one or both ends of the beam and one or more of the contact structures.
Abstract:
A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.
Abstract:
A micromechanical switch comprises a substrate, at least one pair of support members fixed to the substrate, at least one pair of beam members placed in proximity and parallel to each other above the substrate, and connected to one of the support members, respectively, each of the beam members having a moving portion which is movable with a gap with respect to the substrate, and a contact portion provided on the moving portion, and a driving electrode placed on the substrate between the pair of beam members to attract the moving portions of the beam members in a direction parallel to the substrate with electrostatic force so that the contact portions of the beam members which are opposed to each other are short-circuited.
Abstract:
A thin plate-shaped substrate 21 comprised of a monocrystal is provided with a piezoelectric element 24, and both ends of a movable piece 20 whose one surface is provided with a movable contact 25 are fixed and supported to a base 11. Then, by curving the movable piece 20 via the piezoelectric element 24, the movable contact 25 is brought in and out of contact with a pair of fixed contacts 38 and 39 that face the movable contact. With this arrangement, a subminiature micro-relay having a mechanical contact mechanism that has a small resistance in turning on the contact and the desired vibration resistance, frequency characteristic and insulating property can be obtained.
Abstract:
The present invention generally relates to a mechanism for making a MEMS switch that has a robust RF-contact by avoiding currents to run through a thin sidewall in a via from the RF-contact to the underlying RF-electrode.
Abstract:
The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.
Abstract:
Micro-electromagnetically actuated latched miniature relay switches formed from laminate layers comprising a spring and magnet, electromagnetic coils, magnetic latching material, and transmission line with contacts. Preferably the miniature relay switches transmit up to about 50 W of DC or AC line power, and carry up to about 10 A of load current, with an overall volume of less than about 100 mm3. In addition to switching large power, the device preferably requires less than 3 V to actuate, and has a latching feature that retains the switch state after actuation without the need for external applied voltage or current.
Abstract:
Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. A wiring layer is formed on a substrate comprising actuator electrodes and a contact electrode. A MEMS beam is formed above the wiring layer and at least one spring is formed and attached to at least one end of the MEMS beam. At least one spring has a predetermined spring constant based on a coefficient of thermal expansion (CTE) mismatch between materials of the MEMS structure and the spring. Additionally, an array of mini-bumps is formed between the wiring layer and the MEMS beam. A size of a space between fixed actuator electrodes or dummy actuators is determined based on a lateral shift of the MEMS beam.