公开(公告)号：US09502864B2

公开(公告)日：2016-11-22

申请号：US14742971

申请日：2015-06-18

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Kévin Guilloy ,  Nicolas Pauc ,  Vincent Calvo ,  Vincent Reboud

IPC: H01S5/183 ,  B81B3/00 ,  H01S5/10 ,  H01S5/30

CPC classification number: H01S5/18319 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81C2201/017 ,  H01S5/105 ,  H01S5/3027

Abstract: Optical and/or electronic device comprising a suspended, germanium-based membrane (20) and comprising an active zone (21) placed under tension by tensioning arms (23), said device being characterized in that it comprises at least one tensioning arm (23) comprising nonparallel lateral sides (32), the width of which increases with distance from the active zone (21).

Abstract translation: 光学和/或电子设备包括悬浮的基于锗的膜（20）并且包括通过张紧臂（23）在张力下放置的活动区域（21），所述装置的特征在于，其包括至少一个张紧臂（23） ）包括不平行的横向侧面（32），其宽度随着距离活动区域（21）的距离而增加。

公开(公告)号：US20160308470A1

公开(公告)日：2016-10-20

申请号：US14984886

申请日：2015-12-30

Applicant: International Business Machines Corporation

Inventor： Johan B.C. Engelen ,  Mark A. Lantz ,  Wabe W. Koelmans

IPC: H02N11/00

CPC classification number: H03H9/02393 ,  B81B3/0045 ,  B81B3/007 ,  B81B7/008 ,  B81B2203/0163 ,  B81C1/00698 ,  B81C2201/017 ,  H02N11/00 ,  H03H9/02244 ,  H03H2009/02165 ,  H03H2009/02299 ,  H03H2009/02322

Abstract: A mechanical resonator includes a spring-mass system, wherein the spring-mass system comprises a phase-change material. The mechanical resonator typically comprises an electrical circuit portion, coupled to the phase-change material to alter a phase configuration within the phase-change material. Methods of operation are also disclosed.

公开(公告)号：US20160244579A1

公开(公告)日：2016-08-25

申请号：US15143626

申请日：2016-05-01

Applicant: Auburn University ,  Clemson University

Inventor： William Robert Ashurst ,  Virginia A. Davis ,  Christopher L. Kitchens

IPC: C08J5/18 ,  C09K19/38

CPC classification number: C08J5/18 ,  B81C1/00015 ,  B81C1/0015 ,  B81C1/00158 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00539 ,  B81C2201/017 ,  B82Y40/00 ,  C08J2301/02 ,  C09K13/00 ,  C09K19/02 ,  C09K19/3402 ,  C09K19/3819 ,  C09K2019/523 ,  Y10T428/24851

Abstract: Illustrative embodiments of microdevices and methods of manufacturing such microdevices are disclosed. In at least one illustrative embodiment, one or more microdevices may be formed on a substrate, with each of the one or more microdevices comprising a body micromachined from a continuous film formed on the substrate, the continuous film having a controlled microstructure of cellulose nanocrystals (CNC).

Abstract translation: 公开了微型装置的说明性实施例和制造这种微型装置的方法。 在至少一个说明性实施例中，一个或多个微器件可以形成在衬底上，一个或多个微器件中的每一个包括从在衬底上形成的连续膜微加工的主体，所述连续膜具有受控的纤维素纳米晶体的微结构（ CNC）。

公开(公告)号：US20160244321A1

公开(公告)日：2016-08-25

申请号：US15148130

申请日：2016-05-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  H01H59/00 ,  H01H1/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract translation: 形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。 该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。 下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。

公开(公告)号：US09353313B2

公开(公告)日：2016-05-31

申请号：US13963709

申请日：2013-08-09

Applicant: William Robert Ashurst ,  Virginia A. Davis ,  Christopher L. Kitchens

Inventor： William Robert Ashurst ,  Virginia A. Davis ,  Christopher L. Kitchens

IPC: C09K13/00 ,  C09K19/02 ,  B81C1/00 ,  B82Y40/00 ,  C09K19/34 ,  C09K19/52

CPC classification number: C08J5/18 ,  B81C1/00015 ,  B81C1/0015 ,  B81C1/00158 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00539 ,  B81C2201/017 ,  B82Y40/00 ,  C08J2301/02 ,  C09K13/00 ,  C09K19/02 ,  C09K19/3402 ,  C09K19/3819 ,  C09K2019/523 ,  Y10T428/24851

Abstract: Illustrative embodiments of microdevices and methods of manufacturing such microdevices are disclosed. In at least one illustrative embodiment, a method of manufacturing one or more microdevices may include forming a liquid dispersion containing cellulose nanocrystals (CNC), depositing the liquid dispersion containing the CNC on a substrate, drying the liquid dispersion containing the CNC to form a solid film on the substrate, where the liquid dispersion contains a sufficient concentration of CNC to form a continuous solid film having a controlled microstructure, and processing the solid film to form the one or more microdevices on the substrate.

Abstract translation: 公开了微型装置的说明性实施例和制造这种微型装置的方法。 在至少一个说明性实施例中，制造一个或多个微器件的方法可以包括形成含有纤维素纳米晶体（CNC）的液体分散体，将含有CNC的液体分散体沉积在基底上，干燥含有CNC的液体分散体以形成固体 膜，其中液体分散体含有足够浓度的CNC以形成具有可控微结构的连续固体膜，并且处理固体膜以在基底上形成一个或多个微器件。

公开(公告)号：US20160107880A1

公开(公告)日：2016-04-21

申请号：US14970933

申请日：2015-12-16

Applicant: FUJIFILM Corporation

Inventor： Takahiro SANO ,  Takayuki NAONO

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0127 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C1/00666 ,  B81C2201/0112 ,  B81C2201/0169 ,  B81C2201/017 ,  B81C2201/0176 ,  G01C19/56 ,  G01P15/09 ,  G01P2015/084 ,  H01L41/0815 ,  H01L41/1138 ,  H01L41/319 ,  H03H9/17 ,  H03H2003/027 ,  H03H2003/0414 ,  H04R17/10 ,  H04R31/00 ,  H04R2201/003

Abstract: A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion R2 of the film thickness t2 of the second silicon oxide film with respect to the sum of the film thickness t1 of the first silicon oxide film and the film thickness t2 of the second silicon oxide film satisfies the following condition: 0.10 μm≦t1≦2.00 μm; and R2≧0.70.

Abstract translation: 一种膜片式谐振MEMS器件的制造方法，包括：形成第一氧化硅膜，形成第二氧化硅膜，形成下部电极，形成压电膜，形成上部电极，层叠第一氧化硅膜，第二氧化硅膜 氧化硅膜，下电极，压电膜和上电极，在硅衬底的第一表面上，并且通过深反应离子蚀刻蚀刻硅衬底的第一表面的相对侧表面，以形成 膜结构，其中第二氧化硅膜的膜厚度t2的比例R2相对于第一氧化硅膜的膜厚度t1与第二氧化硅膜的膜厚度t2之和的比例满足以下条件 ：0.10μm＆nlE; t1＆nlE;2.00μm; R2≥0.70。

公开(公告)号：US20160096721A1

公开(公告)日：2016-04-07

申请号：US14963844

申请日：2015-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US08865497B2

公开(公告)日：2014-10-21

申请号：US12973422

申请日：2010-12-20

Applicant: George A. Dunbar, III ,  Zhong-Xiang He ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper

Inventor： George A. Dunbar, III ,  Zhong-Xiang He ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper

IPC: H01L29/84 ,  B81C1/00 ,  B81B3/00 ,  G06F17/50 ,  H01H57/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires from the lower wiring layer. The method further includes forming an electrode beam over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition.

Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括在基板上形成下布线层。 该方法还包括从下布线层形成多条分立布线。 该方法还包括在多个离散导线上形成电极束。 形成电极束和多个离散导线中的至少一个形成有最小化后续硅沉积中的小丘和三点的布局。

公开(公告)号：US20140078640A1

公开(公告)日：2014-03-20

申请号：US14086639

申请日：2013-11-21

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Keiichi UMEDA

IPC: H01B1/02 ,  C23C14/34

CPC classification number: H01B1/02 ,  B81B2201/0221 ,  B81B2203/04 ,  B81C1/00666 ,  B81C1/00698 ,  B81C2201/017 ,  B81C2201/0181 ,  C23C14/025 ,  C23C14/165 ,  C23C14/34 ,  H01G4/33 ,  H01G5/16 ,  H03H9/131 ,  H03H9/173 ,  H03H9/2457 ,  H03H2003/021 ,  H03H2003/0428 ,  H03H2009/02291

Abstract: In a thin film device including a thin film electrode which has a main electrode layer formed of tungsten, a thin film electrode having a low resistivity is realized. There is provided a thin film device including a thin film electrode that has an underlayer and a main electrode layer formed on the underlayer. The underlayer is formed of a titanium-tungsten alloy having a crystalline structure with a wavy-like surface morphology, and the main electrode layer is formed of tungsten having a crystalline structure with a wavy-like surface morphology.

Abstract translation: 在包括具有由钨形成的主电极层的薄膜电极的薄膜器件中，实现了具有低电阻率的薄膜电极。 提供了一种薄膜器件，其包括具有形成在底层上的底层和主电极层的薄膜电极。 底层由具有波浪形表面形态的晶体结构的钛 - 钨合金形成，并且主电极层由具有波状表面形态的晶体结构的钨形成。

公开(公告)号：US20110318861A1

公开(公告)日：2011-12-29

申请号：US12973285

申请日：2010-12-20

Applicant: Christopher V. JAHNES ,  Anthony K. STAMPER

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: H01L21/02 ,  G06F17/50

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a lower wiring layer. The method further includes forming a layer. The method further includes forming a second sacrificial cavity layer over the first sacrificial layer and in contact with the layer. The method further includes forming a lid on the second sacrificial cavity layer. The method further includes forming at least one vent hole in the lid, exposing a portion of the second sacrificial cavity layer. The method further includes venting or stripping the second sacrificial cavity layer such that a top surface of the second sacrificial cavity layer is no longer touching a bottom surface of the lid, before venting or stripping the first sacrificial cavity layer thereby forming a first cavity and second cavity, respectively.

Abstract translation: 形成至少一个微机电系统（MEMS）腔的方法包括在下布线层上形成第一牺牲腔层。 该方法还包括形成层。 该方法还包括在第一牺牲层上形成与层接触的第二牺牲腔层。 该方法还包括在第二牺牲腔层上形成盖子。 该方法还包括在盖中形成至少一个通气孔，暴露第二牺牲腔层的一部分。 该方法还包括排气或剥离第二牺牲腔层，使得第二牺牲腔层的顶表面在不排除或剥离第一牺牲腔层之前不再接触盖的底表面，从而形成第一腔和第二腔 腔。